Author: claimsbot

I claim:

1. A textile trim with decorative double lipped fastening structure, the trim comprising:
a first set of textile threads substantially parallel along their length folded near a mid point of the threads and knotted together providing a first knot near a mid point of the folded threads with a fringe end and a folded end on opposite sides of the first knot;
a second set of textile threads substantially parallel along their length adjacent the first set of threads, the second set folded near a mid point of the second set of threads and knotted together providing a second knot near a mid point of the second set of folded threads with a second fringe end and a second folded end on opposite sides of the second knot;
a first lip having a cross stitching substantially perpendicular to the first and second set of threads connecting the folded ends of the first and second set of threads side by side;
a second lip of thread having a plurality of folds folded to length substantially equal to the length of the folded ends of the first and second set of threads held together by a second cross stitching; and
a second cross stitching securing the second lip adjacent the first and second knots providing a bottom of a fastening channel of uniform depth having decorative lips.
2. The trim of claim 1 wherein the bottom of the fastening channel provides a uniform stopping point for placement of an edge of a piece of material within the fastening channel so that the first and second lips protrude substantially equally on either side of the material.
3. The trim of claim 2 wherein each of the folds of the folded ends of the first and second set of threads have an apex and the cross stitching holds the apexes together.
4. The trim of claim 3 wherein the cross stitching is made of transparent plastic.
5. The trim of claim 4 wherein each of the folds of the second lip have an apex and further comprises a third cross stitching connecting the apexes of the second lip.
6. The trim of claim 5 wherein the second and third cross stitching are made of transparent plastic.
7. The trim of claim 6 wherein the knots of the first and second set of threads each have a cross over portion oriented to face a common direction.
8. The trim of claim 7 wherein the threads of the first and second set of threads are at least two different colors.
9. A trim piece comprising a U shaped fastening structure fastenable about at least one edge of at least one piece of material adjacent a knot, the knot defined by a plurality of textile threads having a predetermined thickness, the U shaped fastening structure having, first and second legs, the first leg having a portion of the textile threads extending out of the knot, the second leg being constructed of textile material, and cross stitching adjacent the knot connecting the first and second legs.
10. The trim piece of claim 9 wherein the first leg is comprised of at least two of the plurality of threads, at least two of the plurality of threads being folded at a common folding point where a long axis of each of the threads are substantially parallel and are in a substantially common plane.
11. The trim of claim 9 wherein the portion of the threads forming the first leg are arranged and connected substantially side by side.
12. The trim of claim 10 wherein the first leg has a thickness substantially equal to twice the thickness of the textile threads.
13. The trim of claim 12 wherein the second leg is made of thread, the thread having a thickness substantially equal to the thickness of the textile threads and a length substantially equal to the first leg.
14. The trim of claim 13 wherein the cross stitching is made of transparent plastic.
15. The trim of claim 14 where the threads are at least two different colors.
16. A textile trim with decorative double lipped fastening structure, the trim comprising:
a first set of textile threads knotted together to provide a first knot near a mid point, a first fringe end and a first connecting end being located on opposite sides of the first knot;
a second set of textile threads adjacent the first set of threads knotted together providing a second knot near a mid point of the second set of threads, a second fringe end and a second connecting end being located on opposite sides of the second knot;
a first lip formed by connecting the first connecting end to the second connecting end; and
a second lip of textile material having a fastened end fastened to the first and second connecting ends adjacent the first and second Inots.
17. The trim of claim 16 wherein the first and second lip define a fastening channel, a bottom portion of the fastening channel providing a stopping point for placement of an edge of a piece of material within the fastening channel.
18. A textile trim with decorative double lipped fastening structure, the trim comprising:
a first substantially flat lip of thread having a plurality of folds, the folds being arranged side by side;
at least one first cross stitching holding the folds in side by side relationship;
at least one tassel having at least one thread folded near a mid point forming a folded end and a fringe end, the folded end lying between folds of the first lip;
at least one second cross stitching connecting the folded end of the tassel to the first lip;
a second lip of thread having a plurality of folds folded to length substantially equal to the first lip where the folds are arranged side by side so that the lip is substantially flat;
at least one third cross stitching connecting an edge of the second lip parallel with an edge of the first lip forming a connecting pocket between the first lip and the second lip for inserting at least one piece of material.
19. The trim of claim 18 wherein the connecting pocket has a uniform stopping point for placement of an edge of the piece of material within the connecting pocket so that the first and second lips protrude substantially equally on either side of the material.
20. The trim of claim 19 wherein the first cross stitching, the second cross stitching and the third cross stitching are made of transparent plastic.
21. A method of making a textile trim article with decorative double lipped fastening structure, the method comprising:
cutting lengths of thread to a predetermined length within a predetermined tolerance;
arranging at least one first length of thread with at least one second length of thread so that a long axis of the first length is substantially parallel with a long axis of the second length;
folding the first and second lengths at a common predetermined point forming a folded end and a fringe end so that portions of the lengths on each side of the fold are parallel with each other;
knotting the first and second lengths into a knotted tuft where the folded end and the fringe end are on opposite side of the knot;
arranging a first knotted tuft side by side with a second knotted tuft; connecting the first and second knotted tufts together at the folded end;
securing outer ends of the folded ends preventing unraveling of the tufts;
folding at least one third length of thread to a predetermined folded length a plurality of times so that the folded lengths lie side by side;
stitching the folded lengths together with a cross stitch forming a textile lip; and
fastening an edge of the textile lip to the folded ends.
22. The method of claim 18 further comprising arranging the edge of the textile lip parallel to the knotted tuft before fastening the edge to the folded ends.
23. The method of claim 19 further comprising determining the predetermined folded length of the third length of thread by measuring the length of the folded end of the first and second lengths of thread.
24. A method of making a textile trim article with decorative double lipped fastening structure, the method comprising:
using a single automatic crocheting machine to create a single lip decorative trim having a plurality of knots while simultaneously making an attachment lip structure for attachment to the single lip decorative trim so that the aesthetic appearance of the attachment lip substantially matches the aesthetic appearance of the single lip;
aligning an edge of the attachment lip structure parallel to the single lip of the decorative trim; and
connecting the edge of the attachment lip structure to the single lip decorative trim adjacent and parallel to the knots of the decorative trim.
25. A method of making a textile trim article with decorative double lipped fastening structure, the method comprising:
using a single automatic crocheting machine to create a single lip decorative trim while simultaneously making an attachment lip structure for attachment to the single lip decorative trim so that the aesthetic appearance of the attachment lip substantially matches the aesthetic appearance of the single lip;
aligning an edge of the attachment lip structure parallel to the single lip of the decorative trim; and
connecting the edge of the attachment lip structure to the single lip decorative trim adjacent and parallel to an edge of the single lip.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A system operable for network communication, comprising:
a prioritized, contention-based channel access mechanism (PCA) coupled to a medium access control (MAC) sublayer and comprising contention access logic for assessing whether a frame transmission may commence and an interrupt service routine for initiating transmission by the PCA of at least one frame.
2. The system of claim 1, wherein the contention access logic further comprises logic for assessing whether the transmission channel is currently clear.
3. The system of claim 2, wherein the logic for assessing further comprising logic for checking the contents of a clear channel register.
4. The system of claim 2, wherein the logic for assessing further comprising logic for communicating to the interrupt service routine the assessment that the transmission channel is currently not clear.
5. The system of claim 1, wherein the contention access logic further comprises logic for suspending reception mode.
6. The system of claim 5, wherein the logic for suspending further comprises logic for deasserting listening hardware and for clearing a clear channel request register.
7. The system of claim 1, wherein the contention access logic is at least partially software.
8. The system of claim 1, wherein the contention access logic further comprises logic for decrementing a backoff counter based on an assessment that the transmission channel is currently clear.
9. The system of claim 1, wherein the contention access logic further comprises logic for generating an interrupt to launch the interrupt service routine.
10. The system of claim 1, wherein the interrupt service routine further comprises instructions for initiating the transmission by the PCA based on a checking that the backoff counter currently has a zero value.
11. The system of claim 1, wherein the interrupt service routine comprises instructions for determining whether there is sufficient time remaining in a present contention interval to complete a frame transaction.
12. A system operable for network communication, comprising:
a medium access control (MAC) sublayer operable to build and forward at least a frame for network communication;
a prioritized, contention-based channel access mechanism (PCA) coupled to the MAC and comprising contention access logic for assessing whether a frame transmission may commence and an interrupt service routine for initiating transmission by the PCA of the at least a frame; and
a physical (PHY) layer operable to transmit at least a frame received from the MAC sublayer.
13. The system of claim 12, further comprising an interface operable to facilitate communication between the medium access control sublayer and the physical layer, wherein the interface is selected from the group of: a ultra-wide interface, a WiMedia interface, a wireless universal serial bus, a IEEE 1394 interface, and a wireless LAN interface.
14. A method for providing controlled frame transmission during a contention period in a shared communications medium comprising:
determining, by contention access logic, whether a frame transmission may commence;
if the shared communications medium is idle, initiating, by an interrupt service routine, a prioritized contention access transmission of at least a frame from a medium access control (MAC) sublayer to a physical (PHY) layer; and
transmitting, by the PHY layer, the at least a frame received from the MAC sublayer onto the communications medium.
15. The method of claim 14, wherein the transmitting comprises transmitting the at least a frame to a device.
16. The method of claim 14, wherein the transmitting comprises transmitting to a plurality of devices.
17. The method of claim 14, further comprising receiving, by the MAC sublayer, notification from a host that transmission of at least one frame is sought.
18. The method of claim 14, wherein the determining comprises monitoring the state of the shared communications medium for a certain specified duration.
19. A network, comprising:
at least two devices, each of which comprises
a host;
a medium access control (MAC) sublayer coupled to the host and operable to build and forward at least a frame for network communication;
a prioritized, contention-based channel access mechanism (PCA) coupled to the MAC and comprising contention access logic for assessing whether a frame transmission may commence and an interrupt service routine for initiating transmission by the PCA of the at least a frame; and
a physical (PHY) layer coupled to said MAC sublayer; wherein said PHY layer is operable to transmit at least a frame received from the MAC sublayer.
20. The network of claim 19, wherein the devices are wireless devices.
21. The network of claim 19, wherein the network is a wireless network.
22. The network of claim 19, wherein the interrupt service routine comprises instructions for determining whether there is sufficient time remaining in a present contention interval to complete a frame transaction.
23. The network of claim 19, wherein the contention access logic further comprises logic for suspending reception.
24. The network of claim 23, wherein the logic for suspending further comprises logic for deasserting reception mode and for clearing a clear channel request register.

What is claimed is:

1. A method for making a semiconductor device comprising:
forming a dielectric layer on a substrate;
forming an impurity containing metal layer on the dielectric layer; and then
forming a metal gate electrode from the impurity containing metal layer.
2. The method of claim 1 wherein the dielectric layer comprises a high-k gate dielectric layer.
3. The method of claim 2 wherein the high-k gate dielectric layer is formed by atomic layer chemical vapor deposition, and comprises a material selected from the group consisting of hafnium oxide, hafnium silicon oxide, lanthanum oxide, zirconium oxide, zirconium silicon oxide, titanium oxide, tantalum oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.
4. The method of claim 1 wherein the impurity containing metal layer can tolerate temperatures that exceed about 900 C.
5. The method of claim 2 wherein the impurity containing metal layer comprises a material that is selected from the group consisting of tungsten, platinum, ruthenium, palladium, molybdenum and niobium, and their alloys, metal carbides, metal nitrides, and conductive metal oxides.
6. The method of claim 5 wherein the impurity containing metal layer comprises a material that is selected from the group consisting of titanium carbide, zirconium carbide, tantalum carbide, tungsten carbide, titanium nitride, tantalum nitride, and ruthenium oxide.
7. The method of claim 1 wherein the impurity containing metal layer is formed by:
forming a metal layer that has a workfunction of between about 4.3 eV and about 4.9 eV; and then
adding to the metal layer a sufficient amount of an element to shift the metal layer’s workfunction by at least about 0.1 eV.
8. The method of claim 7 wherein the metal gate electrode will serve as the gate electrode for an NMOS transistor, and wherein the element has an electronegativity value that is less than about 1.7.
9. The method of claim 8 wherein the element is selected from the group consisting of a lanthanide metal, an alkali metal, an alkaline earth metal, scandium, zirconium, hafnium, aluminum, titanium, tantalum, niobium, and tungsten.
10. The method of claim 9 wherein the element is aluminum.
11. The method of claim 7 wherein the metal gate electrode will serve as the gate electrode for a PMOS transistor, and wherein the element has an electronegativity value that is greater than about 2.8.
12. The method of claim 11 wherein the element is selected from the group consisting of nitrogen, chlorine, oxygen, fluorine, and bromine.
13. The method of claim 12 wherein the element is chlorine.
14. The method of claim 7 wherein the element is added to the metal layer until it comprises between about 3 and about 50 atomic percent of the impurity containing metal layer.
15. A method for making a CMOS transistor comprising:
forming a high-k gate dielectric layer on a substrate; and
forming an impurity containing metal layer on the high-k gate dielectric layer;
wherein a first portion of the impurity containing metal layer includes a sufficient amount of a first element to lower the metal layer’s workfunction and wherein a second portion of the impurity containing metal layer includes a sufficient amount of a second element to raise the metal layer’s workfunction.
16. The method of claim 15 further comprising forming a gate electrode for an NMOS transistor from the first portion of the impurity containing metal layer, and forming a gate electrode for a PMOS transistor from the second portion of the impurity containing metal layer, and wherein the first element has an electronegativity value that is less than about 1.7, and the second element has an electronegativity value that is greater than about 2.8.
17. The method of claim 15 wherein the impurity containing metal layer is formed by:
forming a metal layer that has a workfunction of between about 4.3 eV and about 4.9 eV; and then
adding to a first portion of the metal layer a sufficient amount of a first element to lower the metal layer’s workfunction to between about 4.0 eV and about 4.2 eV, and
adding to a second portion of the metal layer a sufficient amount of a second element to raise the metal layer’s workfunction to between about 5.0 eV and about 5.2 eV.
18. The method of claim 17 wherein the first element is added to the first portion of the metal layer while the second portion of the metal layer is masked, and the second element is added to the second portion of the metal layer while the first portion of the metal layer is masked.
19. The method of claim 18 wherein the first element is selected from the group consisting of a lanthanide metal, scandium, zirconium, hafnium, aluminum, titanium, tantalum, niobium, and tungsten, and the second element is selected from the group consisting of nitrogen, chlorine, oxygen, fluorine, and bromine.
20. The method of claim 19 wherein the first element is added to the metal layer until it comprises between about 3 and about 50 atomic percent of the first portion of the impurity containing metal layer, and the second element is added to the metal layer until it comprises between about 3 and about 50 atomic percent of the second portion of the impurity containing metal layer.
21. A semiconductor device comprising:
a dielectric layer formed on a substrate; and
a metal gate electrode formed on the dielectric layer;
wherein the metal gate electrode includes a sufficient amount of an impurity to shift the metal gate electrode’s workfunction by at least about 0.1 eV.
22. The semiconductor device of claim 21 wherein the dielectric layer comprises a high-k gate dielectric layer.
23. The semiconductor device of claim 22 wherein the high-k gate dielectric layer is formed by atomic layer chemical vapor deposition, and comprises a material selected from the group consisting of hafnium oxide, hafnium silicon oxide, lanthanum oxide, zirconium oxide, zirconium silicon oxide, titanium oxide, tantalum oxide, barium strontium titanium oxide, barium titanium oxide, strontium titanium oxide, yttrium oxide, aluminum oxide, lead scandium tantalum oxide, and lead zinc niobate.
24. The semiconductor device of claim 21 wherein the metal gate electrode serves as the gate electrode for an NMOS transistor, and wherein the impurity is an element that has an electronegativity value that is less than about 1.7.
25. The semiconductor device of claim 24 wherein the element is selected from the group consisting of a lanthanide metal, an alkali metal, an alkaline earth metal, scandium, zirconium, hafnium, aluminum, titanium, tantalum, niobium, and tungsten.
26. The semiconductor device of claim 21 wherein the metal gate electrode serves as the gate electrode for a PMOS transistor, and wherein the impurity is an element that has an electronegativity that is greater than about 2.8.
27. The semiconductor device of claim 26 wherein the element is selected from the group consisting of nitrogen, chlorine, oxygen, fluorine, and bromine.
28. The semiconductor device of claim 21 wherein the impurity is present in the metal gate electrode at a concentration of between about 3 and about 50 atomic percent.
29. The semiconductor device of claim 21 wherein the metal gate electrode is a first metal gate electrode and further comprising a second metal gate electrode; and wherein the first metal gate electrode includes a sufficient amount of a first element to lower the workfunction of the first metal gate electrode by at least about 0.1 eV, and the second metal gate electrode includes a sufficient amount of a second element to raise the workfunction of the second metal gate electrode by at least about 0.1 eV.
30. The semiconductor device of claim 29 wherein:
the first metal gate electrode serves as the gate electrode for an NMOS transistor;
the first element has an electronegativity value that is less than about 1.7, is selected from the group consisting of a lanthanide, scandium, zirconium, hafnium, aluminum, titanium, tantalum, niobium, and tungsten, and is present in the first metal gate electrode at a concentration of between about 3 and about 50 atomic percent;
the second metal gate electrode serves as the gate electrode for a PMOS transistor; and
the second element has an electronegativity value that is greater than about 2.8, is selected from the group consisting of nitrogen, chlorine, oxygen, fluorine, and bromine, and is present in the second metal gate electrode at a concentration of between about 3 and about 50 atomic percent.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for oxidative treatment of gaseous pollutants in a process gas stream, comprising the steps of:
conducting said gas stream into a thermal reactor via a process gas inlet, wherein said thermal reactor comprises heating elements, and wherein said process gas inlet comprises a conduit terminating with a portion of said conduit within said reactor wherein said portion of said conduit is located within a tube which projects beyond the end of said conduit to define a chamber within said tube, said tube having an open end communicating with the interior of said reactor; and
introducing other gases into said conduit via an independent inlet communicatively connected to said conduit, said independent inlet positioned along said conduit before said conduit terminates in said tube, said thermal reactor comprising a central chamber comprising said heating elements, an entry end and an exit end of said chamber, a side inlet communicating with an exterior air space defined by an exterior wall of the reactor and said heating elements, an interior air space communicating with said exterior air space, said interior air space defined by an interior wall of the reactor and said heating elements, and an orifice in said interior wall for introducing air from said interior space into said central chamber.
2. The method of claim 1, wherein said conduit is curved.
3. The method of claim 1, wherein said conduit and independent inlet are concentrically located.
4. The method of claim 1, wherein a plurality of gas streams are introduced to said reactor via a plurality of process gas inlets.
5. The method of claim 1, further comprising the step of:
flowing the gas stream after treatment in said thermal reactor to a particle removal chamber.
6. The method of claim 5, wherein said particle removal chamber comprises:
a packed bed;
at least one liquid inlet positioned at the top of said chamber to provide a washing liquid to an intermittent sprayer; and
a continuous sprayer, wherein the packed bed is for trapping and condensing particles and said gas stream is upwardly flowed through said bed against downwardly flowing liquid; and
an air inlet positioned below said liquid inlets to provide flowing air onto the upper portion of said bed to cool an upper portion of said bed to promote condensation and particle growth within said bed.
7. The method of claim 1, further comprising the step of:
flowing the gas stream after treatment in said thermal reactor to a scrubber for removing chemical pollutants.
8. The method of claim 7, wherein said scrubber comprises:
an inlet for introducing said gas stream into a scrubbing chamber of said scrubber via an inlet, wherein said scrubbing chamber contains coated packing in at least two vertically separated beds, said coating being adapted to entrap or react with said pollutants.
9. The method of claim 7, further comprising the steps of:
monitoring the amount of said pollutants being removed from said stream by said scrubber;
controlling selective introduction of a regenerative coating composition onto each of said beds to regenerate said coating on said packing.
10. The method of claim 9, wherein said step of monitoring is performed by a detector that measures the concentration of a pollutant in the gas exiting said scrubber.
11. The method of claim 9, further comprising the step of:
introducing said coating composition to said beds at predetermined time intervals.
12. A method of treating gaseous pollutants in a gas stream, comprising the steps of:
oxidatively treating a gas stream within a thermal reactor with other gases introduced into said thermal reactor, said thermal reactor comprising a central chamber comprising heating elements, an entry end and an exit end of said central chamber, a side inlet communicating with an exterior air space defined by an exterior wall of the reactor and said heating elements, an interior air space communicating with said exterior air space, said interior air space defined by an interior wall of the reactor and said heating elements, and an orifice in said interior wail for introducing air from said interior space into said central chamber;
introducing said oxidatively treated gas stream into a scrubber for removing chemical pollutants in said gas stream;
monitoring the amount of said pollutants being removed from said stream by said scrubber; and
selectively introducing a regenerative coating composition onto each of at least two vertically separated beds.