1. A vaginal cleaning device, comprising:
(a) an elongated applicator comprising an axial support post having a front end and a rear end; a head with a rear surface connected to said front end of said axial support post; and a circular disk disposed around said rear end of said axial support post; and a flexible absorbent material disposed around said axial support post between said head and said circular disk;
(b) an elongated handle having a front end connected to said rear end of said elongated applicator;
(c) a hollow tube having a front open end and a rear open end; said hollow tube being disposed around said elongated applicator; and
(d) a removable lid attached to said front open end of said hollow tube for covering said front open end prior to use.
2. The vaginal cleaning device as recited in claim 1, wherein an outer diameter of said head is smaller than outer diameters of said flexible absorbent material disposed around said axial support post and of said circular disk.
3. The vaginal cleaning device as recited in claim 2, wherein an inner diameter of said hollow tube is substantially same as said outer diameter of said circular disk.
4. The vaginal cleaning device as recited in claim 3, wherein said lid has a sealable opening for introducing a fluid to said elongated applicator through said sealable opening.
5. The vaginal cleaning device as recited in claim 4, where in said lid has a sealing material for sealing said sealable opening and a pulling means for assisting opening of said lid.
6. The vaginal cleaning device as recited in claim 1, wherein said axial support post has retention means on an external surface thereof, for retaining said flexible absorbent material in position.
7. The vaginal cleaning device as recited in claim 5, wherein said retention means is a plurality of protruding rims positioned around said axial support post.
8. The vaginal cleaning device as recited in claim 1, wherein said flexible absorbent material is a sponge made of hydrophilic polyurethane foam.
9. The vaginal cleaning device as recited in claim 1, wherein said flexible absorbent material is ribbed cotton.
10. The vaginal cleaning device as recited in claim 1, wherein said flexible absorbent material is expandable upon releasing from said hollow tube.
11. A method of cleaning vagina comprising the steps of:
(a) providing a cleaning device which comprises:
(i) an elongated applicator comprising an axial support post having a front end and a rear end; a head with a rear surface connected to said front end of said axial support post; and a circular disk disposed around said rear end of said axial support post; and a flexible absorbent material disposed around said axial support post between said head and said circular disk;
(ii) an elongated handle having a front end connected to said rear end of said elongated applicator;
(iii) a hollow tube having a front open end and a rear open end; said hollow tube being disposed around said elongated applicator; and
(iv) a removable lid attached to said front open end of said hollow tube for covering said front open end prior to use;
(b) opening said lid, and adding a fluid through said front open end of said hollow tube, and allowing said fluid to enter into said applicator to wet said flexible absorbent material;
(c) removing said lid and inserting said hollow tube into vagina then pushing said applicator forward while holding said hollow tube to push said applicator out of said hollow tube into the vagina of a user;
(d) removing said hollow tube in a backward direction along said handle;
(e) moving said applicator inside the vagina using said handle to clean the vagina; and
(f) removing said applicator out from the vagina.
12. The method of cleaning vagina as recited in claim 11, wherein an outer diameter of said head is smaller than outer diameters of said flexible absorbent material disposed around said axial support post and of said circular disk, to allow said fluid to enter into said flexible absorbent material.
13. The method of cleaning vagina as recited in claim 11, wherein an inner diameter of said hollow tube is substantially same as said outer diameter of said circular disk to retain water inside said applicator prior to inserting said cleaning device.
14. The method of cleaning vagina as recited in claim 11, wherein said moving said applicator in step (e) includes rotating said applicator, moving forward and backward along the vagina, or combination thereof.
15. A method of cleaning vagina comprising the steps of:
(a) providing a cleaning device which comprises:
(i) an elongated applicator comprising an axial support post having a front end and a rear end; a head with a rear surface connected to said front end of said axial support post; and a circular disk disposed around said rear end of said axial support post; and a flexible absorbent material disposed around said axial support post between said head and said circular disk;
(ii) an elongated handle having a front end connected to said rear end of said elongated applicator;
(iii) a hollow tube having a front open end and a rear open end; said hollow tube being disposed around said elongated applicator; and
(iv) a removable lid attached to said front open end of said hollow tube for covering said front open end prior to use, said lid having a sealable opening;
(b) opening said sealable opening of said lid, and adding said fluid through said sealable opening, and allowing said fluid to enter into said applicator to wet said flexible absorbent material;
(c) removing said lid and inserting said hollow tube into vagina then pushing said applicator forward while holding said hollow tube to push said applicator out of said hollow tube into the vagina of a user;
(d) removing said hollow tube in a backward direction along said handle;
(e) moving said applicator inside the vagina using said handle to clean the vagina; and
(f) removing said applicator out from the vagina.
16. The method of cleaning vagina as recited in claim 15, wherein an outer diameter of said head is smaller than outer diameters of said flexible absorbent material disposed around said axial support post and of said circular disk, to allow said fluid to enter into said flexible absorbent material.
17. The method of cleaning vagina as recited in claim 15, wherein an inner diameter of said hollow tube is substantially same as said outer diameter of said circular disk to retain water inside said applicator prior to inserting said cleaning device.
18. The method of cleaning vagina as recited in claim 15, wherein said moving said applicator in step (e) includes rotating said applicator, moving forward and backward along the vagina, or combination thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for growth and fabrication of semipolar (Ga,Al,In,B)N film, comprising:
(a) selecting a semipolar growth orientation;
(b) selecting a gallium nitride (GaN) substrate compatible with growth of the selected semipolar growth orientation; and
(c) growing one or more planar semipolar (Ga,Al,In,B)N layers on a planar semipolar surface of the GaN substrate by metalorganic chemical vapor deposition (MOCVD), wherein the planar semipolar surface of the GaN substrate has the selected semipolar growth orientation, and an area and quality of the planar semipolar (Ga,Al,In,B)N layers parallel to the surface of the GaN substrate are sufficient to fabricate a semipolar (Ga,Al,In,B)N device.
2. The method of claim 1, wherein the GaN substrate comprises a semipolar gallium nitride wafer.
3. The method of claim 1, wherein the planar semipolar surface of the GaN substrate is grown on a foreign material.
4. The method of claim 1, wherein the planar semipolar (Ga,Al,In,B)N layers form a heterostructure.
5. The method of claim 1, further comprising processing the planar semipolar (Ga,Al,In,B)N film layers into a device.
6. A device fabricated using the method of claim 1.
7. The method of claim 1, wherein the area is at least 300 \u03bcm\xd7300 \u03bcm.
8. The method of claim 1, wherein the area and the quality of the planar semipolar (Ga,Al,In,B)N layers parallel to the surface of the GaN substrate are sufficient to fabricate the semipolar (Ga,Al,In,B)N device using lithographic methods.
9. The method of claim 1, wherein the planar semipolar (Ga,Al,In,B)N layers emit light with a reduced blue-shift in an emission peak with increasing drive current, as compared to a blue shift in c-plane layers operating in a similar wavelength range and similar drive current range.
10. The method of claim 1, wherein the planar semipolar (Ga,Al,In,B)N layers emit light with a reduced decrease in the external quantum efficiency (EQE) with increasing drive current, as compared to a decrease in an EQE in c-plane layers operating in a similar wavelength range and similar drive current range.
11. The method of claim 1, further comprising selecting the semipolar growth orientation from a plurality of available semipolar orientations having a planar surface.
12. A semipolar (Ga,Al,In,B)N film, comprising:
(a) a semipolar growth orientation;
(b) a gallium nitride (GaN) substrate compatible with growth of the selected semipolar growth orientation; and
(c) one or more planar semipolar (Ga,Al,In,B)N layers on a planar semipolar surface of the GaN substrate, wherein the planar semipolar surface of the GaN substrate has the selected semipolar growth orientation, and an area and quality of the planar semipolar (Ga,Al,In,B)N layers parallel to the surface of the GaN substrate are sufficient to fabricate a semipolar (Ga,Al,In,B)N device.
13. The film of claim 12, wherein the GaN substrate comprises a semipolar nitride wafer.
14. The film of claim 12, wherein the planar semipolar surface of the GaN substrate is grown on a foreign material.
15. The film of claim 12, wherein the planar semipolar (Ga,Al,In,B)N layers form a heterostructure.
16. The film of claim 12, further comprising processing the planar semipolar (Ga,Al,In,B)N layers into a device.
17. The film of claim 12, wherein the area is at least 300 \u03bcm\xd7300 \u03bcm.
18. The film of claim 12, wherein the area and the quality of the planar semipolar (Ga,Al,In,B)N layers parallel to the surface of the GaN substrate is sufficient to fabricate the semipolar (Ga,Al,In,B)N devices by standard lithographic methods.
19. The film of claim 12, wherein the planar semipolar (Ga,Al,In,B)N layers emit light with a reduced blue-shift in an emission peak with increasing drive current, as compared to a blue shift in c-plane layers operating in a similar wavelength range and similar drive current range.
20. The film of claim 12, wherein the planar semipolar (Ga,Al,In,B)N layers emit light with a reduced decrease in the external quantum efficiency (EQE) with increasing drive current, as compared to a decrease in an EQE in c-plane layers operating in a similar wavelength range and similar drive current range.
21. The film of claim 12, wherein the planar semipolar (Ga,Al,In,B)N layers include one or more device layers and the semipolar orientation optimizes the device layers’ piezoelectric polarization or effective hole mass, as compared to the device layers’ piezoelectric polarization or effective hole mass on a different semipolar orientation.
22. The film of claim 12, wherein the semipolar growth orientation is different from a (10\u221211) or a (10\u221210) orientation.
23. The film of claim 12, wherein the planar semipolar (Ga,Al,In,B)N layers include one or more device layers and the semipolar orientation is such that at least one of the device layers emits blue light with an external quantum efficiency of at least 0.34% and an output power of at least 190 microwatts, or emits green light with an external quantum efficiency of at least 0.04% and an output power of at least 20 microwatts.