Author: claimsbot

1. A nonvolatile charge trap memory device, comprising:
a substrate having a channel region, a source region and a drain region; and
a gate stack disposed above the substrate, over the channel region, wherein the gate stack comprises:
a tunnel dielectric layer disposed above the channel region;
a first charge-trapping region and a second charge-trapping region, the regions disposed above the tunnel dielectric layer and separated by a distance;
an isolating dielectric layer disposed above the tunnel dielectric layer and between the first charge-trapping region and the second charge-trapping region;
a gate dielectric layer disposed above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer; and
a gate electrode disposed above the gate dielectric layer.
2. The nonvolatile charge trap memory device of claim 1, wherein the isolating dielectric layer both physically and electrically isolates the first charge-trapping region from the second charge-trapping region.
3. The nonvolatile charge trap memory device of claim 1, wherein the distance between the first charge-trapping region and the second charge-trapping region is approximately in the range of 3-20 nanometers.
4. The nonvolatile charge trap memory device of claim 1, wherein the isolating dielectric layer comprises silicon oxide or silicon dioxide.
5. The nonvolatile charge trap memory device of claim 1, wherein the gate dielectric layer comprises a high-k dielectric material.
6. The nonvolatile charge trap memory device of claim 1, wherein the gate electrode is a metal gate electrode.
7. The nonvolatile charge trap memory device of claim 1, wherein the nonvolatile charge trap memory device is a SONOS-type device.
8. The nonvolatile charge trap memory device of claim 7, wherein the source region, the drain region and the gate electrode are N-type, and the SONOS-type device is an N-type SONOS-type device.
9. A nonvolatile charge trap memory device, comprising:
a substrate having a channel region, a source region and a drain region; and
a gate stack disposed above the substrate, over the channel region, wherein the gate stack comprises:
a first tunnel dielectric layer region and a second tunnel dielectric layer region disposed above the channel region and separated by a distance;
a first charge-trapping region and a second charge-trapping region, the regions disposed above the first tunnel dielectric layer region and second tunnel dielectric layer region, respectively, and separated by the distance;
an isolating dielectric layer disposed above the channel region, between the first charge-trapping region and the second charge-trapping region, and between the first tunnel dielectric layer region and the second tunnel dielectric layer region;
a gate dielectric layer disposed above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer; and
a gate electrode disposed above the gate dielectric layer.
10. The nonvolatile charge trap memory device of claim 9, wherein the isolating dielectric layer both physically and electrically isolates the first charge-trapping region from the second charge-trapping region.
11. The nonvolatile charge trap memory device of claim 9, wherein the distance between the first charge-trapping region and the second charge-trapping region is approximately in the range of 3-20 nanometers.
12. The nonvolatile charge trap memory device of claim 9, wherein the isolating dielectric layer comprises silicon oxide or silicon dioxide.
13. The nonvolatile charge trap memory device of claim 9, wherein the gate dielectric layer comprises a high-k dielectric material.
14. The nonvolatile charge trap memory device of claim 9, wherein the gate electrode is a metal gate electrode.
15. The nonvolatile charge trap memory device of claim 9, wherein the nonvolatile charge trap memory device is a SONOS-type device.
16. The nonvolatile charge trap memory device of claim 15, wherein the source region, the drain region and the gate electrode are N-type, and the SONOS-type device is an N-type SONOS-type device.
17. The nonvolatile charge trap memory device of claim 9, wherein the first tunnel dielectric layer region further extends along an outer sidewall of the first charge-trapping region, and the second tunnel dielectric layer region further extends along an outer sidewall of the second charge-trapping region.
18. A method of fabricating a nonvolatile charge trap memory device, the method comprising:
removing a dummy gate electrode to form a trench above a substrate having a channel region, a source region and a drain region all self-aligned to the trench;
forming a tunnel dielectric layer in the trench;
forming a first charge-trapping region and a second charge-trapping region above the tunnel dielectric layer and separated by a distance;
forming an isolating dielectric layer between the first charge-trapping region and the second charge-trapping region;
forming a gate dielectric layer above the first charge-trapping region, the second charge-trapping region and the isolating dielectric layer; and
forming a gate electrode disposed above the gate dielectric layer.
19. The method of claim 18, wherein forming the isolating dielectric layer further comprises forming the isolating dielectric layer above the tunnel dielectric layer.
20. The method of claim 18, wherein forming the isolating dielectric layer further comprises forming the isolating dielectric layer between first and second regions of the tunnel dielectric layer.
21. The method of claim 18, wherein forming the isolating dielectric layer comprises both physically and electrically isolating the first charge-trapping region from the second charge-trapping region.
22. The method of claim 18, wherein forming the isolating dielectric layer comprises forming a silicon oxide or silicon dioxide layer.
23. The method of claim 18, wherein forming the gate dielectric layer comprises forming a high-k dielectric material.
24. The method of claim 18, wherein forming the gate electrode comprises forming a metal gate electrode.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A sample conveying method using a conveying means having a conveying robot which conveys a sample in atmosphere between a lock chamber located at the entrance of a vacuum chamber and a cassette which accommodates a plurality of samples;
separately conveying each cassette in said plurality of cassettes horizontally to a position where a conveyed cassette faces to said conveying robot,
holding said sample by a scooping device equipped on said conveying robot which is anchored at a position adjacent said cassette and said lock chamber using a vacuum adhering and vertically moving said sample for a predetermined amount, and
moving said scooping device between said cassette and said lock chamber.

1. A method for executing a scanning procedure comprising the steps of:
(a) generating CT image data for a scan;
(b) generating CT attenuation correction data for the scan;
(c) acquiring a current frame of PET data for the scan in a 3D format; and
(d) simultaneously conducting the following steps:
reconstructing at least a portion of a PET image for the current frame, including
the step of overlapping a portion of the current frame with an adjacent frame, and

acquiring at least a portion of a next frame of PET data.
2. The method of claim 1, further comprising repeating step (d) for at least one subsequent frame.
3. The method of claim 1, wherein the 3D format comprises a projection plane format.
4. The method of claim 3, wherein the step of reconstructing at least a portion of a PET image comprises applying a Fourier rebinning process to directly convert the PET data from the projection plane format to a sinogram format.
5. The method of claim 1, wherein the step of overlapping comprises computing a weight for each overlapping slice in the overlapping portion of the current frame and the adjacent frame.
6. The method of claim 1, wherein the adjacent frame comprises a previous frame, and the step of overlapping comprises retrieving a stored overlapping portion of the previous frame.
7. The method of claim 1, further comprising the step of storing an overlapping portion of the current frame to enable overlapping during reconstruction of the next frame.
8. The method of claim 1, further comprising the step of automatically configuring a scan protocol for the PET data based on a scan protocol used to acquire the image CT data.
9. The method of claim 1, further comprising the step of generating a fused PET-CT image with the CT image data and the PET image.
10. The method of claim 1, wherein the reconstructing step includes applying an attenuation correction to the PET image using the CT attenuation correction data.
11. A PET-CT system comprising:
a CT detector;
a PET detector;
at least one memory; and
at least one processor, which is programmed to
control a generation of CT image data for the scan;
control a generation of CT attenuation correction data for the scan;
control an acquisition of a current frame of PET data for the scan in a 3D format; and
control a simultaneous execution of (a) a reconstruction of at least a portion of a PET image for the current frame, including overlapping a portion of the current frame with an adjacent frame, and (b) an acquisition of at least a portion of a next frame of PET data.
12. The PET- CT system of claim 11, wherein the at least one processor is programmed to repeat, for at least one subsequent frame, the step of controlling the simultaneous execution of (a) and (b).
13. The PET-CT system of claim 11, wherein the 3D format comprises a projection plane format.
14. The PET-CT system of claim 13, wherein the reconstruction of at least a portion of a PET image comprises application of a Fourier rebinning process to convert the PET data from the projection plane format to a sinogram format.
15. The PET-CT system of claim 11, wherein the at least one processor is programmed to compute a weight for each overlapping slice in the overlapping portion of the current frame and the adjacent frame.
16. The PET-CT system of claim 11, wherein the adjacent frame comprises a previous frame, and the at least one processor is programmed to retrieve a stored overlapping portion of the previous frame.
17. The PET-CT system of claim 11, wherein the at least one processor is programmed to store an overlapping portion of the current frame to enable overlapping during reconstruction of the next frame.
18. The PET-CT system of claim 11, wherein the at least one processor is programmed to automatically configure a scan protocol for the PET data based on a scan protocol used to acquire the image CT data.
19. The PET-CT system of claim 11, wherein the at least one processor is programmed to generate a fused PET-CT image with the CT image data and the PET image.
20. The method of claim 11, wherein the at least one processor is programmed to apply an attenuation correction to the PET image using the CT attenuation correction data.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A radio communication system comprising a communication channel for the transmission of data from a secondary station to a primary station, the secondary station being operable in a first (normal) and a second (gated) mode and comprising means for repeatedly transmitting a coded word providing information on transport formats applicable to the channel, and means for transmitting a reduced quantity of information when operating in the second mode compared to that transmitted when operating in the first mode, and the primary station comprising means for receiving and decoding the code word, wherein the secondary station comprises means for using a different coding scheme to generate the coded word in each of the modes and the primary station comprises means for selecting one of two different decoding schemes depending on the current mode of operation of the secondary station and for decoding the coded word using the selected decoding scheme.
2. The system of claim 1, wherein the secondary station comprises means for using a coding scheme during the second mode which generates a code word that is a punctured version of the code word that would be generated by the coding scheme used during the first mode.
3. A primary station for use in a radio communication system comprising a communication channel for the transmission of data from a secondary station to the primary station, wherein means are provided for repeatedly receiving from the secondary station a coded word providing information on transport formats applicable to the channel, for determining whether the secondary station is operating in a first (normal) or a second (gated) mode, for selecting one of two different decoding schemes depending on the current mode of operation of the secondary station and for decoding the coded word using the selected decoding scheme.
4. A secondary station for use in a radio communication system comprising a communication channel for the transmission of data from the secondary station to a primary station, the secondary station being operable in a first (normal) and a second (gated) mode and comprising means for repeatedly transmitting a coded word providing information on transport formats applicable to the channel, and means for transmitting a reduced quantity of information when operating in the second mode compared to that transmitted when operating in the first mode, wherein the secondary station comprises means for using a different coding scheme to generate the coded word in each of the modes.
5. The secondary station of claim 4, further comprising means for using a coding scheme during the second mode which generates a code word that is a punctured version of the code word that would be generated by the coding scheme used during the first mode.
6. The secondary station of claim 4, further comprising means for restricting the number of available transport formats during operation of the second mode to no more than the number of unique code words able to be generated by the coding scheme employed.
7. A method of operating a radio communication system comprising a communication channel for the transmission of data from a secondary station to a primary station, the secondary station being operable in a first (normal) and a second (gated) mode, the method comprising the secondary station repeatedly transmitting a coded word providing information on transport formats applicable to the channel and transmitting a reduced quantity of information when operating in the second mode compared to that transmitted when operating in the first mode, and the primary station receiving and decoding the code word, wherein the secondary station uses a different coding scheme to generate the coded word in each of the modes and the primary station selects one of two different decoding schemes depending on the current mode of operation of the secondary station and decodes the coded word using the selected decoding scheme.
8. The method of claim 7, wherein the secondary station uses a coding scheme during the second mode which generates a code word that is a punctured version of the code word that would be generated by the coding scheme used during the first mode.
9. The method of claim 8, wherein the second mode is operable at a plurality of different information rates and by the coding scheme for a lower information rate generating a code word that is a truncated version of the code word generated for a higher information rate.
10. The method of claim 8, wherein a puncturing pattern is arranged to maximize the distance between code words in a set of code words, which set is smaller than the set of code words available during the first mode.
11. The method of claim 10, wherein there are only two possible transport format combinations during operation of the second mode, each represented by a different code word, and by the puncturing scheme ensuring that all the bits of the code words are different.
12. The method of claim 8, wherein a puncturing pattern is arranged to minimize the number of code words which have the smallest distance between code words.