All The Claims

1. A production process of a poly(arylene sulfide), comprising the following steps (a), (b) and (d) or (a) to (d):
(a) a polymerization step of subjecting at least one sulfur source selected from the group consisting of alkali metal sulfides and alkali metal hydrosulfides and a dihalo-aromatic compound to a polymerization reaction in an organic amide solvent to form a polymer;
(b) a separation step of separating and collecting the polymer from a liquid reaction mixture containing the polymer formed after the polymerization step;
(c) a washing step of washing the polymer collected with at least one washing liquid selected from the group consisting of water, an organic solvent and a mixed solution of water and an organic solvent and then separating and collecting the polymer; and
(d) an aqueous oxidizing solution treatment step of treating the polymer collected by bringing the polymer into contact with an aqueous oxidizing solution.
2. The production process according to claim 1, which further comprises
(e) a separated liquid-treating step of treating at least one separated liquid selected from the group consisting of a liquid after the polymer is separated from the liquid reaction mixture in the separation step and a washing waste liquid after the polymer is separated in the washing step by bringing the liquid into contact with an aqueous oxidizing solution.
3. The production process according to claim 1, wherein the aqueous oxidizing solution is aqueous hydrogen peroxide.
4. The production process according to claim 3, wherein the amount of hydrogen peroxide is 0.005 to 50 parts by mass per 100 parts by mass of the poly(arylene sulfide).
5. The production process according to claim 1, wherein the organic solvent includes acetone.
6. The production process according to claim 1, wherein the polymerization step is at least two-stage polymerization steps comprising:
a first-stage polymerization step of subjecting at least one sulfur source selected from the group consisting of the alkali metal sulfides and the alkali metal hydrosulfides and the dihalo-aromatic compound to a polymerization reaction in the organic amide solvent to form a polymer in which a conversion of the dihalo-aromatic compound is 80 to 99%; and
a second-stage polymerization step of continuing the polymerization reaction in the presence of the phase separation agent in a phase-separated state that a concentrated formed polymer phase and a dilute formed polymer phase are present in a mixed state within the polymerization reaction system.
7. The production process of the poly(arylene sulfide) according to claim 1, wherein the polymerization step is at least two-stage polymerization steps comprising:
a first-stage polymerization step of subjecting at least one sulfur source selected from the group consisting of the alkali metal sulfides and the alkali metal hydrosulfides and the dihalo-aromatic compound to a polymerization reaction at a temperature of 170 to 270\xb0 C. in the organic amide solvent in a state that water is present in a proportion of 0.02 to 2.0 mol per mol of a charged sulfur source, thereby forming a polymer in which a conversion of the dihalo-aromatic compound is 80 to 99%; and
a second-stage polymerization step of controlling the amount of water in the polymerization reaction system so as to bring about a state that water exists in a proportion of from higher than 2.0 mol to not higher than 10 mol per mol of the charged sulfur source, and heating the polymerization reaction system to a temperature of 245 to 290\xb0 C., thereby continuing the polymerization reaction in a phase-separated state that a concentrated formed polymer phase and a dilute formed polymer phase are present in a mixed state within the polymerization reaction system.
8. The production process of the poly(arylene sulfide) according to claim 7, wherein in the second-stage polymerization step, the amount of water in the polymerization reaction system is controlled so as to bring about a state that water exists in a proportion of from higher than 2.0 mol to not higher than 10 mol per mol of the charged sulfur source, and at least one phase separation agent selected from the group consisting of organic carboxylic acid metal salts, organic sulfonic acid metal salts, alkali metal halides, alkaline earth metal halides, aromatic carboxylic acid alkaline earth metal salts, phosphoric acid alkali metal salts, alcohols and paraffinic hydrocarbons is caused to exist within a range of 0.01 to 3 mol per mol of the charged sulfur source.
9. The production process of the poly(arylene sulfide) according to claim 1, wherein prior to the polymerization step, are arranged a dehydration step of heating and reacting a mixture containing the organic amide solvent, the sulfur source containing the alkali metal hydrosulfide and an alkali metal hydroxide in a proportion of 0.95 to 1.05 mol per mol of the alkali metal hydrosulfide to discharge at least a part of a distillate containing water from the interior of the system containing the mixture to the exterior of the system; and
a charging step of adding an alkali metal hydroxide and water to the mixture remaining in the system after the dehydration step, as needed, to adjust the mixture in such a manner that the total number of moles of the number of moles of an alkali metal hydroxide formed with hydrogen sulfide formed upon the dehydration, the number of moles of the alkali metal hydroxide added prior to the dehydration and the number of moles of the alkali metal hydroxide added after the dehydration becomes 1.00 to 1.09 mol per mol of the sulfur source existing in the system after the dehydration step, and the number of moles of water becomes 0.02 to 2.0 mol per mol of the charged sulfur source.
10. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 1, in which the content of mesityl oxide is 65 ppm or less.
11. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 1, in which the content of diacetone alcohol is 35 ppm or less.
12. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 1, in which the content of a dihalo-aromatic compound is 110 ppm or less
13. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 1, in which the total content of mesityl oxide and diacetone alcohol is 100 ppm or less.
14. The production process according to claim 2, wherein the aqueous oxidizing solution is aqueous hydrogen peroxide.
15. The production process according to claim 14, wherein the amount of hydrogen peroxide is 0.005 to 50 parts by mass per 100 parts by mass of the poly(arylene sulfide).
16. The production process according to claim 2, wherein the organic solvent includes acetone.
17. The production process according to claim 2, wherein the polymerization step is at least two-stage polymerization steps comprising:
a first-stage polymerization step of subjecting at least one sulfur source selected from the group consisting of the alkali metal sulfides and the alkali metal hydrosulfides and the dihalo-aromatic compound to a polymerization reaction in the organic amide solvent to form a polymer in which a conversion of the dihalo-aromatic compound is 80 to 99%; and
a second-stage polymerization step of continuing the polymerization reaction in the presence of the phase separation agent in a phase-separated state that a concentrated formed polymer phase and a dilute formed polymer phase are present in a mixed state within the polymerization reaction system.
18. The production process of the poly(arylene sulfide) according to claim 2, wherein the polymerization step is at least two-stage polymerization steps comprising:
a first-stage polymerization step of subjecting at least one sulfur source selected from the group consisting of the alkali metal sulfides and the alkali metal hydrosulfides and the dihalo-aromatic compound to a polymerization reaction at a temperature of 170 to 270\xb0 C. in the organic amide solvent in a state that water is present in a proportion of 0.02 to 2.0 mol per mol of a charged sulfur source, thereby forming a polymer in which a conversion of the dihalo-aromatic compound is 80 to 99%; and
a second-stage polymerization step of controlling the amount of water in the polymerization reaction system so as to bring about a state that water exists in a proportion of from higher than 2.0 mol to not higher than 10 mol per mol of the charged sulfur source, and heating the polymerization reaction system to a temperature of 245 to 290\xb0 C., thereby continuing the polymerization reaction in a phase-separated state that a concentrated formed polymer phase and a dilute formed polymer phase are present in a mixed state within the polymerization reaction system.
19. The production process of the poly(arylene sulfide) according to claim 18, wherein in the second-stage polymerization step, the amount of water in the polymerization reaction system is controlled so as to bring about a state that water exists in a proportion of from higher than 2.0 mol to not higher than 10 mol per mol of the charged sulfur source, and at least one phase separation agent selected from the group consisting of organic carboxylic acid metal salts, organic sulfonic acid metal salts, alkali metal halides, alkaline earth metal halides, aromatic carboxylic acid alkaline earth metal salts, phosphoric acid alkali metal salts, alcohols and paraffinic hydrocarbons is caused to exist within a range of 0.01 to 3 mol per mol of the charged sulfur source.
20. The production process of the poly(arylene sulfide) according to claim 2, wherein prior to the polymerization step, are arranged a dehydration step of heating and reacting a mixture containing the organic amide solvent, the sulfur source containing the alkali metal hydrosulfide and an alkali metal hydroxide in a proportion of 0.95 to 1.05 mol per mol of the alkali metal hydrosulfide to discharge at least a part of a distillate containing water from the interior of the system containing the mixture to the exterior of the system; and
a charging step of adding an alkali metal hydroxide and water to the mixture remaining in the system after the dehydration step, as needed, to adjust the mixture in such a manner that the total number of moles of the number of moles of an alkali metal hydroxide formed with hydrogen sulfide formed upon the dehydration, the number of moles of the alkali metal hydroxide added prior to the dehydration and the number of moles of the alkali metal hydroxide added after the dehydration becomes 1.00 to 1.09 mol per mol of the sulfur source existing in the system after the dehydration step, and the number of moles of water becomes 0.02 to 2.0 mol per mol of the charged sulfur source.
21. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 2, in which the content of mesityl oxide is 65 ppm or less.
22. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 2, in which the content of diacetone alcohol is 35 ppm or less.
23. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 2, in which the content of a dihalo-aromatic compound is 110 ppm or less
24. A poly(arylene sulfide) produced by the production process of the poly(arylene sulfide) according to claim 2, in which the total content of mesityl oxide and diacetone alcohol is 100 ppm or less.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A pumped pixel including:
a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel;
a charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, the charge barrier temporarily blocking charge transfer between the first photo-diode and the second photo-diode;
a pump gate positioned on the substrate adjacent to the charge barrier, the pump gate pumping the accumulated charge from the first photo-diode to the second photo-diode through the charge barrier in response to a pump voltage applied by a controller; and
a transfer gate positioned on the substrate between the second photo-diode and the floating diffusion, the transfer gate transferring the pumped charge from the second photo-diode to the floating diffusion in response to a transfer voltage applied by a controller.
2. The pumped pixel of claim 1,
wherein the second photo-diode has a greater well depth than the first photo-diode for storing the charge, and the substrate below the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the first photo-diode, and
wherein during an integration period or a storage period, the controller is configured to repeatedly:
a) apply a positive pump voltage to the pump gate to lower the clock barrier and the clock well to transfer accumulated charge from the first photo-diode into the clock well, and
b) apply a negative pump voltage to the pump gate to raise the clock barrier and the clock well, to transfer the charge from the clock well over a top portion of the charge barrier and into the second photo-diode for storage.
3. The pumped pixel of claim 1,
wherein the first photo-diode and second photo-diode have equal well depths for storing the charge, and the substrate below the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the first photo-diode, and
wherein during an integration period or a storage period, the controller is configured to:
a) apply a positive pump voltage to the pump gate to lower the clock barrier and the clock well to transfer accumulated charge from the first photo-diode into the clock well, and
b) apply a negative pump voltage to the pump gate to raise the clock barrier and the clock well to transfer the charge from the clock well over a top portion of the charge barrier and into the second photo-diode for storage.
4. The pumped pixel of claim 1,
wherein the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the first photo-diode, the clock well is doped to be deeper than the clock barrier, and the charge barrier is an n-doped region of the substrate below a p-doped surface that blocks the flow of electrons.
5. The pumped pixel of claim 1,
wherein the substrate below the transfer gate has a transfer well for transferring charge from the second photo-diode to the floating diffusion, and
wherein during an integration period and a storage period, the controller is configured to apply a negative transfer voltage to the transfer gate to raise the transfer well and block charge from entering the floating diffusion.
wherein during a readout period, the controller is configured to apply a positive transfer voltage to the transfer gate to lower the transfer well and transfer the pumped charge stored in the second photo-diode to the floating diffusion for pixel readout.
6. The pumped pixel of claim 1,
wherein a CMOS imager includes an array of the pumped pixels, and
during a rolling shutter mode of the imager, for each of the pumped pixels in a selected row of the array, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, the first photo-diode and the second photo-diode to clear stored charge,
b) apply a positive and then negative voltage during a storage period after the integration period to the pump gate to transfer the accumulated charge from the first photo-diode over the charge barrier into the second photo-diode for storage, and
c) apply a positive voltage during a readout period to the transfer gate to transfer the charge stored in the second photo-diode to the floating diffusion for pixel readout.
7. The pumped pixel of claim 1,
wherein a CMOS imager includes an array of the pumped pixels, and
during a global shutter mode of the imager, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, the first photo-diode and the second photo-diode of every pumped pixel in the array to simultaneously clear stored charge,
b) apply a positive and then negative voltage during a storage period after the integration period to the pump gate of every pumped pixel to simultaneously transfer the accumulated charge from the first photo-diode over the charge barrier into the second photo-diode, and
c) apply a positive voltage during a readout period to the transfer gate of each pumped pixel in a selected row to transfer the charge stored in the second photo-diode to the floating diffusion for each pixel row.
8. A pumped pixel including:
a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on a substrate of the pixel;
a charge barrier positioned on the substrate between the second photo-diode and the floating diffusion, the charge barrier temporarily blocking charge transfer between the second photo-diode and the floating diffusion;
a transfer gate positioned on the substrate between the first photo-diode and the second photo-diode, the transfer gate transferring the accumulated charge from the first photo-diode to the second photo-diode for storage in response to a transfer voltage applied by a controller; and
a pump gate positioned on the substrate adjacent to the charge barrier, the pump gate pumping the transferred charge stored in the second photo-diode to the floating diffusion over the charge barrier in response to a pump voltage applied by a controller.
9. The pumped pixel of claim 8,
wherein the floating diffusion has a deeper well depth than the second photo-diode for storing the charge, and the substrate below the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the second photo-diode, and
wherein during a readout period, the controller is configured to repeatedly:
a) apply a positive pump voltage to the pump gate to lower the clock barrier and the clock well to transfer the charge stored in the second photo-diode into the clock well, and
b) apply a negative pump voltage to the pump gate to raise the clock barrier and the clock well, to transfer the charge from the clock well over a top portion of the charge barrier and into the floating diffusion.
10. The pumped pixel of claim 8,
wherein the second photo-diode and floating diffusion have equal well depths for storing the charge, and the substrate below the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the second photo-diode, and
wherein during a readout period, the controller is configured to:
a) apply a positive pump voltage to the pump gate to lower the clock barrier and the clock well to transfer the accumulated charge from the second photo-diode into the clock well, and
b) apply a negative pump voltage to the pump gate to raise the clock barrier and the clock well, to transfer the charge from the clock well over a top portion of the charge barrier and into the floating diffusion.
11. The pumped pixel of claim 8,
wherein the pump gate has a clock well for storing charge and a clock barrier to block the charge in the clock well from transferring back into the second photo-diode, the clock well is doped to be deeper than the clock barrier, and the charge barrier is an n-doped region of the substrate below a p-doped surface that blocks the flow of electrons.
12. The pumped pixel of claim 8,
wherein the substrate below the transfer gate has a transfer well for transferring charge from the first photo-diode to the second photo-diode, and
wherein during an integration period, the controller is configured to apply a negative transfer voltage to the transfer gate to raise the transfer well and block charge from entering the second photo-diode.
wherein during a storage period, the controller is configured to apply a positive transfer voltage to the transfer gate to lower the transfer well and transfer the accumulated charge from the first photo-diode to the second photo-diode for pixel storage.
13. The pumped pixel of claim 8,
wherein a CMOS imager includes an array of the pumped pixels, and
during a rolling shutter mode of the imager, for each of the pumped pixels in a selected row of the array, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, first photo-diode and second photo-diode to clear stored charge,
b) apply a positive voltage during a storage period to the transfer gate to transfer the charge accumulated in the first photo-diode to the second photo-diode for pixel storage, and
c) repeatedly apply a positive and then a negative voltage during a readout period to the pump gate to transfer the stored charge from the second photo-diode over the charge barrier into the floating diffusion.
14. The pumped pixel of claim 8,
wherein a CMOS imager includes an array of the pumped pixels, and
during a global shutter mode of the imager, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, first photo-diode and second photo-diode of every pumped pixel to simultaneously clear stored charge,
b) apply a positive voltage during a storage period to the transfer gate of each pumped pixel to simultaneously transfer the charge accumulated in the first photo-diode to the second photo-diode, and
c) apply a positive and then a negative voltage during a readout period to the pump gate of pumped pixels in a selected row to transfer the stored charge from the second photo-diode through the charge barrier into the floating diffusion.
15. A pumped pixel including:
a first photo-diode accumulating charge in response to impinging photons, a second photo-diode and a floating diffusion positioned on substrate of the pixel;
a first charge barrier positioned on the substrate between the first photo-diode and the second photo-diode, the first charge barrier temporarily blocking charge transfer between the first photo-diode and the second photo-diode;
a second charge barrier positioned on the substrate between the second photo-diode and the floating diffusion, the second charge barrier temporarily blocking charge transfer between the second photo-diode and the floating diffusion;
a first pump gate positioned on the substrate adjacent to the first charge barrier, the first pump gate pumping the accumulated charge from the first photo-diode to the second photo-diode over the first charge barrier in response to a first pump voltage applied by a controller; and
a second pump gate positioned on the substrate adjacent to the second charge barrier, the second pump gate pumping the pumped charge from the second photo-diode to the floating diffusion over the second charge barrier in response to a second pump voltage applied by a controller.
16. The pumped pixel of claim 15,
wherein the first photo-diode and second photo-diode have wells for storing the charge, and the substrate below the first pump gate has a first clock well for storing charge and a first clock barrier to block the charge in the first clock well from transferring back into the first photo-diode, and
wherein during a storage period, the controller is configured to:
a) apply a positive pump voltage to the first pump gate to lower the first clock barrier and the first clock well to transfer accumulated charge from the first photo-diode into the first clock well, and
b) apply a negative pump voltage to the first pump gate to raise the first clock barrier and the first clock well, to transfer the charge from the first clock well over a top portion of the first charge barrier and into the second photo-diode for storage.
17. The pumped pixel of claim 15,
wherein the substrate below the second pump gate has a second clock well for storing charge and a second clock barrier to block the charge in the second clock well from transferring back into the second photo-diode, and
wherein during a storage period, the controller is configured to apply a negative voltage to the second pump gate to raise the second clock barrier and well and block charge from entering the floating diffusion.
wherein during a readout period, the controller is configured to apply a positive voltage and then a negative voltage to the second pump gate to transfer the charge stored in the second photo-diode over a top portion of the second charge barrier and into the floating diffusion for pixel readout.
18. The pumped pixel of claim 15,
wherein the first pump gate has a first clock well for storing charge and a first clock barrier to block the charge in the first clock well from transferring back into the first photo-diode, the first clock well is doped to be deeper than the first clock barrier, the second pump gate has a second clock well for storing charge and a second clock barrier to block the charge in the second clock well from transferring back into the second photo-diode, the second clock well is doped to be deeper than the second clock barrier, and
wherein the first charge barrier and the second charge barrier are n-doped regions of the substrate below a p-doped surface that block the flow of electrons.
19. The pumped pixel of claim 15,
wherein a CMOS imager includes an array of the pumped pixels, and
during a rolling shutter mode of the imager, for each of the pumped pixels in a selected row of the array, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, first photo-diode and second photo-diode to clear stored charge,
b) repeatedly apply a positive and then a negative voltage during a storage period to the first pump gate to transfer the accumulated charge from the first photo-diode over the first charge barrier into the second photo-diode for storage, and
c) repeatedly apply a positive and then a negative voltage during a readout period to the second pump gate to transfer the stored charge from the second photo-diode over the second charge barrier into the floating diffusion for readout.
20. The pumped pixel of claim 15,
wherein a CMOS imager includes an array of the pumped pixels, and
during a global shutter mode of the imager, the controller is configured to successively:
a) apply a reset voltage during a reset period to the floating diffusion, first photo-diode and second photo-diode of every pumped pixel to simultaneously clear stored charge,
b) apply a negative and positive voltage during a storage period to the first pump gate of each pumped pixel to simultaneously transfer the charge accumulated in the first photo-diode through the first charge barrier and into the second photo-diode, and
c) apply a positive and negative voltage during a readout period to the second pump gate of every pumped pixel in a selected row to transfer the stored charge from the second photo-diode through the charge barrier into the floating diffusion for readout of each pixel row.

1. A rhythmic lighting method for an LED on a portable electronic device comprising:
(A) determining whether the portable electronic device is playing audio;
(B) if the portable electronic device is playing audio, performing a frequency quantification analysis to the audio; otherwise keeping the same status;
(C) extracting a quantification value for a frequency section of the audio and determining whether the quantification value is exceeding a predetermined value;
(D) if the quantification value exceeds the predetermined value, sending an enabling signal to the portable electronic device to execute a blinking action; and
(E) if the quantification value is less than the predetermined value, the portable electronic device will keep the same status without performing lighting.
2. The method as claimed in claim 1, wherein the portable electronic device is a multimedia player.
3. The method as claimed in claim 2, wherein the multimedia player is a radio.
4. The method as claimed in claim 2, wherein the multimedia player is a MP3 player.
5. The method as claimed in claim 2, wherein the multimedia player is a slide projector.
6. The method as claimed in claim 5, wherein the slide projector is a slide projector capable of playing background music.
7. The method as claimed in claim 1, wherein the lighting action is performed by a LED.
8. The method as claimed in claim 7, wherein the LED is mounted on an external case of the portable electronic device.
9. The method as claimed in claim 1, wherein in step (C), the predetermined value is 5dB.
10. The method as claimed in claim 1, wherein the audio is music with a tempo.
11. The method as claimed in claim 1, wherein the audio is a MP3 song.
12. The method as claimed in claim 1, wherein the audio is a wireless audio.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for using a modulation scheme for communication, the method comprising:
passing a reference chirp signal to a plurality of channels to produce a plurality of sub-carriers;
applying a varying time delay to each of the plurality of sub-carriers;
coding a symbol signal onto each of the plurality of sub-carriers; and
combining the plurality of sub-carriers to produce a composite waveform.
2. The method of claim 1, wherein the symbol signal varies for each of the plurality of subcarriers.
3. The method of claim 1, wherein passing the reference signal to the plurality of channels to produce the plurality of sub-carriers includes:
splitting the reference signal into a plurality of signals.
4. The method of claim 1, further comprising:
transmitting the composite waveform; and
receiving a received composite waveform.
5. The method of claim 4, further comprising:
demodulating the received composite waveform into filtered symbol data.
6. The method of claim 5, wherein demodulating the received composite waveform into filtered symbol data further comprises:
applying a second reference chirp signal to the received composite waveform.
7. The method of claim 6, wherein the reference chirp signal has a reference signal chirp rate, and wherein the second reference chirp signal has the reference signal chirp rate.
8. The method of claim 6, wherein the received composite waveform is received at a receiving location, and wherein the second reference chirp signal is generated at the receiving location.
9. The method of claim 6, wherein applying the second reference chirp signal to the received composite waveform produces a plurality of frequency offset waveforms.
10. The method of claim 9, further comprising:
passing the plurality of frequency offset waveforms to a plurality of sub-channel demodulators.
11. The method of claim 10, wherein each of the plurality of sub-channel demodulators produces filtered symbol data.
12. The method of claim 10, wherein each of the plurality of sub-channel demodulators includes a band-pass filter, such that the plurality of sub-channel demodulators includes a plurality of band-pass filters.
13. The method of claim 12, wherein each of the band pass filters has a corresponding filtering band frequency, the filtering band frequency for each, of the bandpass filters differing, such that each of the plurality of sub-channel demodulators produces filtered data for the corresponding filtering band frequency.
14. The method of claim 10, wherein each of the plurality of sub-channel demodulators includes an envelope detector.
15. The method of claim 1, wherein the waveform is an electromagnetic wave.
16. The method of claim 1, wherein passing the reference chirp signal to the plurality of channels to produce the plurality of sub-carriers includes:
splitting the reference chirp signal into a plurality of reference chirp signals, wherein each of the plurality of reference chirp signals is transmitted to one from the plurality of channels.
17. The method of claim 1, wherein the symbol signal comprises symbol data.
18. The method of claim 1, wherein the symbol signal is generated by amplitude shift keying (ASK).
19. The method of claim 1, wherein the symbol signal is generated by on-off keying.
20. The method of claim 1, wherein the symbol signal is generated via a switch.
21. An offset chirp modulation transmission and receiving apparatus, comprising:
a modulator producing a transmitted complex composite waveform output via a plurality of data inputs, the modulator including a plurality of sub-channel modulators for receiving a plurality of split data inputs from at least one of the plurality of data inputs; and
a demodulator for receiving a complex composite waveform input, the demodulator including a plurality of sub-channel demodulators for producing a plurality of filtered symbol data.
22. The apparatus of claim 21, wherein the plurality of data inputs includes a reference signal.
23. The apparatus of claim 22, wherein the reference signal comprises a chirp.
24. The apparatus of claim 22, wherein the modulator includes a sub-channeling component for sub-channeling the reference signal into the plurality of split data inputs.
25. The apparatus of claim 24, wherein the plurality of split data inputs comprise a plurality of parallel sub-channeled inputs.
26. The apparatus of claim 21, wherein each of the plurality of sub-channel modulators includes a time delay component.
27. The apparatus of claim 21, wherein each of the plurality of inputs includes a symbol data signal.
28. The apparatus of claim 27, wherein the symbol data signal varies for each of the plurality of inputs.
29. The apparatus of claim 27, wherein each of the plurality of sub-channel modulators includes a combining apparatus for combining one from, the plurality of split data inputs with the symbol data signal.
30. The apparatus of claim 29, wherein the combining apparatus comprises a switch.
31. The apparatus of claim 29, wherein the combining apparatus comprises on-off keying.
32. The apparatus of claim 29, wherein the combining apparatus comprises amplitude shift keying (ASK).
33. The apparatus of claim 21, wherein the demodulator includes:
a mixer for mixing the received complex composite waveform with a demodulator reference input to produce a frequency offset composite waveform.
34. The apparatus of claim 33, wherein the demodulator reference input comprises a time offset composite waveform.
35. The apparatus of claim 34, wherein the time offset composite waveform includes a chirp signal.
36. The apparatus of claim 34, wherein the chirp signal is un-modulated.
37. The apparatus of claim 33, wherein the demodulator reference input is generated at the demodulator.
38. The apparatus of claim 21, wherein each of the sub-channel demodulators includes a band pass filter.
39. The apparatus of claim 21, wherein each of the sub-channel demodulators includes an envelope detector.
40. A method for using offset chirp modulation for communication, the method comprising:
transmitting a reference chirp signal to a plurality of channels to produce a plurality of sub-carriers;
applying a varying time delay to each of the plurality of sub-carriers;
coding a symbol signal onto each of the plurality of subcarriers;
combining the plurality of subcarriers to produce a composite waveform;
transmitting the composite waveform;
receiving a composite waveform; and
demodulating the received composite waveform into filtered symbol data.
41. A system for producing a modulation scheme for communication, comprising:
means for passing a reference chirp signal to a plurality of channels to produce a plurality of sub-carriers;
means for applying a varying time delay to each of the plurality of sub-carriers;
means for coding a symbol signal onto each of the plurality of subcarriers; and
means for combining the plurality of subcarriers to produce a composite waveform.