All The Claims

1. An interlabial pad, used by engaging with labia, comprising:
a water permeable face side sheet facing to a body side;
a water permeable or impermeable back face side sheet facing to a garment side; and
an absorbent body for absorbing body fluid,
wherein the face side sheet and the back face side sheet are bonded together to enclose the absorbent body, and
wherein a body-fluid receiving hole is provided in the vicinity of a middle portion of the interlabial pad, the body-fluid receiving hole being a recess having a bottom portion on the garment side, and having an opening with such a size that can fit a pair of labia minora so as to envelop them from outside.
2. The interlabial pad according to claim 1, wherein said body-fluid receiving hole projects toward the garment side of said interlabial pad.
3. The interlabial pad according to claim 1, wherein said body-fluid receiving hole is shaped so that the middle portion of said interlabial pad caves in.
4. The interlabial pad according to claim 1, comprising:
a sheet-shaped first absorbent sheet body having a through-hole of such a size that can fit a pair of labia minora so as to envelop them from outside; and a bag-shaped second absorbent sheet body serving as a portion of said body-fluid receiving hole,
wherein a garment side surface of said first absorbent sheet body and an inner side surface of the bag of said second absorbent sheet body are in contact each other and stuck together.
5. A method of producing an interlabial pad of claim 4, comprising the steps of:
folding the sheet-shaped first absorbent sheet body having, in the vicinity of the middle portion, the through-hole of such a size that can fit to a pair of labia minora so as to envelop them from outside substantially along a central line in the longitudinal direction;
pinching said first absorbent sheet body by the sheet-shaped second absorbent sheet body folded substantially along the central line in the longitudinal direction in a way to seal the through-hole portion of said folded first absorbent sheet body; and
forming a bag portion serving as the body-fluid receiving hole by sticking an abutment face of an outer peripheral side of the through-hole of in a surface of said first absorbent sheet body to an abutment face in a surface of said second absorbent sheet body.
6. The interlabial pad according to claim 1, wherein said body-fluid receiving hole has a tucking portion where said absorbent sheet body is tucked in.
7. The interlabial pad according to claim 6, wherein said tucking portion is formed on a side wall of said body-fluid receiving hole.
8. The interlabial pad according to claim 6 wherein said tucking portion is formed on a bottom portion of said body-fluid receiving hole.
9. The interlabial pad according to claim 7, comprising a bellows portion where a plurality of said tucking portions are formed on at least one of the side wall and the bottom portion of said body-fluid receiving hole.
10. The interlabial pad according to claim 1, wherein a maximum depth of said body-fluid receiving hole ranges from 10 mm to 60 mm.
11. The interlabial pad according to claim 1, further comprising an adhesion portion surrounding an outer circumference of the opening portion of said body-fluid receiving hole is formed on the body side surface of said interlabial pad.
12. The interlabial pad according to claim 1, wherein the interlabial pad is used for incontinence of urine.
13. The interlabial pad according to claim 1, wherein the interlabial pad is used for absorbing the vaginal discharge.
14. The interlabial pad according to claim 1, wherein the interlabial pad is an interlabial pad for use with a sanitary napkin.
15. A wrapping body, comprising:
an interlabial pad according to claim 1; and
a wrapping container for individual wrapping the interlabial pad.
16. The wrapping body according to claim 15, wherein said interlabial pad is enclosed in said wrapping container so as to be folded to the garment side direction substantially along the central line in the longitudinal direction thereof.
17. A wrapping body, comprising:
an interlabial pad according to claims 6; and
a wrapping container for individual wrapping the interlabial pad, wherein the interlabial pad is enclosed in the wrapping container,
wherein the tucking portion or the bellow portion on said side wall of the interlabial pad is tucked in to store, at least said bottom portion is affixed temporarily on the inner wall of said wrapping container, and said body-fluid receiving hole is formed as the tucking portion or the bellow portion across said side wall spreads in accordance with unwrapping of the wrapping container.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An anti-lock brake control system of a large-size vehicle having first and second end portions, comprising:
two adjacent axles proximate the first end portion of the large-size vehicle and wheels mounted on each of respective ends of the axles, each of the wheels on one of the axles being diagonally opposite a respective other of said wheels on the other axle;
a third axle proximate the second end portion of the large-size vehicle, the third axle being spaced further from each of the two adjacent axles than the two adjacent axles are spaced from each other; and
two control units, each of the two control units being associated with a respective one of the wheels on said one axle, each of the two control units including:
a stress sensor for detecting strain of the associated wheel on said one axle,
a controller for providing an actuating signal in response to output signals from the stress sensor, and
an actuator for adjusting brake fluid pressure applied to the associated wheel on said one axle, and

wherein each one of the two control units also adjusts the brake fluid pressure applied to the wheel on said other axle diagonally opposite the wheel with which said one of the control units is associated.
2. The control system of claim 1, wherein each control unit is supplied with a brake fluid pressure from a foot brake master cylinder.
3. The control system of claim 2, wherein each said stress sensor is a road surface friction coefficient detector utilizing a road surface friction force sensor and a vertical load sensor, each of said sensors comprising strain gauges for detecting the road surface friction force and the vertical reaction load, respectively.
4. The control system of claim 3, wherein the first end portion is a rear end of the vehicle and the second end portion is a front end of the vehicle.
5. The control system of claim 1, wherein each said stress sensor is a road surface friction coefficient detector utilizing a road surface friction force sensor and a vertical load sensor, each of said sensors comprising strain gauges for detecting the road surface friction force and the vertical reaction load, respectively.
6. The control system of claim 5, wherein the first end portion is a rear end of the vehicle and the second end portion is a front end of the vehicle.
7. The control system of claim 1, wherein the first end portion is a rear end of the vehicle and the second end portion is a front end of the vehicle.
8. The control system of claim 7, wherein each control unit is supplied with a brake fluid pressure from a foot brake master cylinder.

1. A semiconductor memory device comprising:
a first and a second signal line forming a pair of signal lines;
a third and a fourth signal line forming another pair of signal lines;
a memory cell connected to the first and second signal lines; and
a sense amplifier circuit provided between the first and second signal lines and the third and fourth signal lines,

wherein
the sense amplifier circuit includes
a first transistor of a first conductivity type having a gate connected to a precharge signal, a source connected to a first power supply potential, and a drain connected to the first signal line,
a second transistor of the first conductivity type having a gate connected to the precharge signal, a source connected to the first power supply potential, and a drain connected to the second signal line,
a third transistor of the first conductivity type having a gate connected to the first signal line, a source connected to the first power supply potential, and a drain connected to the third signal line,
a fourth transistor of the first conductivity type having a gate connected to the second signal line, a source connected to the first power supply potential, and a drain connected to the fourth signal line,
a fifth transistor of a second conductivity type having a gate connected to the third signal line, a source connected to a second power supply potential, and a drain connected to the first signal line, and
a sixth transistor of the second conductivity type having a gate connected to the fourth signal line, a source connected to the second power supply potential, and a drain connected to the second signal line.
2. The semiconductor memory device of claim 1, wherein
the first and second signal lines are local bit lines,
the third and fourth signal lines are global bit lines,
the local and global bit lines form a hierarchical bit line architecture.
3. The semiconductor memory device of claim 1, wherein the memory cell includes
a first cell transistor of the first conductivity type having a source connected to the first power supply potential, a drain connected to a first memory node, and a gate connected to a second memory node,
a second cell transistor of the first conductivity type having a source connected to the first power supply potential, a drain connected to the second memory node, and a gate connected to the first memory node,
a third cell transistor of the second conductivity type having a source connected to the second power supply potential, a drain connected to the first memory node, and a gate connected to the second memory node,
a fourth cell transistor of the second conductivity type having a source connected to the second power supply potential, a drain connected to the second memory node, and a gate connected to the first memory node,
a fifth cell transistor of the second conductivity type having a source connected to the first memory node, a drain connected to the first signal line, and a gate connected to a word line, and
a sixth cell transistor of the second conductivity type having a source connected to the second memory node, a drain connected to the second signal line, and a gate connected to the word line.
4. The semiconductor memory device of claim 1, wherein the memory cell includes
a first cell transistor of the first conductivity type having a source connected to the first power supply potential, a drain connected to a first memory node, and a gate connected to a second memory node,
a second cell transistor of the first conductivity type having a source connected to the first power supply potential, a drain connected to the second memory node, and a gate connected to the first memory node,
a third cell transistor of the second conductivity type having a source connected to the second power supply potential, a drain connected to the first memory node, and a gate connected to the second memory node,
a fourth cell transistor of the second conductivity type having a source connected to the second power supply potential, a drain connected to the second memory node, and a gate connected to the first memory node,
a fifth cell transistor of the second conductivity type having a source connected to the first memory node, a drain connected to the first signal line, and a gate connected to a first word line, and
a sixth cell transistor of the second conductivity type having a source connected to the second memory node, a drain connected to the second signal line, and a gate connected to a second word line different from the first word line.
5. The semiconductor memory device of claim 1, wherein the sense amplifier circuit further includes
a seventh transistor of the second conductivity type having a drain connected to the sources of the fifth and sixth transistors, a source connected to the second power supply potential, and a gate connected to a control signal derived from a column selection signal.
6. The semiconductor memory device of claim 1, wherein
the potential value of the second power supply potential connected to the sources of the fifth and sixth transistors is controlled based on a control signal derived from a column selection signal.
7. A semiconductor memory device comprising:
memory cells;
bit lines each connected to corresponding ones of the memory cells; and
sense amplifier circuits each connected to corresponding ones of the bit lines,

wherein
each of the sense amplifier circuits has a single-end configuration and a function of writing data read from a corresponding one of the memory cells back to the corresponding bit lines, and achieves data write operation to a corresponding one of the memory cells by the function of writing data back to the corresponding bit lines.
8. The semiconductor memory device of claim 7, wherein
the bit lines have a hierarchical architecture divided in memory cell arrays.
9. The semiconductor memory device of claim 7, wherein
the function of writing data back to the bit line is a function of writing back one of high data and low data.
10. The semiconductor memory device of claim 7, wherein
each of the sense amplifier circuits is provided between separated memory cell arrays.
11. The semiconductor memory device of claim 10, wherein
two of the sense amplifier circuits connected to two separated ones of the bit lines are arranged adjacent to each other.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An apical foramen locator comprising:
a power circuit operable to generate a stimulus voltage across two electrodes and across a reference resistor connected to one of the electrodes;
an impedance-sensing circuit operable to sense the stimulus voltage, a first voltage across the two electrodes and a second voltage across the reference resistor;
at least one impedance map including apical foramen location data corresponding to a combination of a first voltage index and a second voltage index wherein the apical foramen location data is generated from reference teeth;
a processing component including a memory storing the at least one impedance map and a microprocessor that is operable to derive the first and second voltage indices from the voltages sensed by the impedance-sensing circuit and to select from the impedance map apical foramen location data that corresponds to the first and second voltage indices; and
a display operable to present the selected apical foramen location data.
2. The locator of claim 1 wherein the stimulus voltage has a single frequency.
3. The locator of claim 1 wherein the stimulus voltage includes a voltage having a waveform and a frequency.
4. The locator of claim 1 wherein the power circuit includes a filter operable to modify the stimulus voltage before the impedance-sensing circuit senses the stimulus voltage.
5. The locator of claim 4 wherein the filter is operable to modify the stimulus voltage to include a 100 mV peak-to-peak sine wave at 30 KHz.
6. The locator of claim 1 wherein one of the electrodes includes a lip clip and the other electrode is connected to a file.
7. The locator of claim 1 wherein the impedance sensing circuit includes an amplifier operable to amplify at least one of the following voltages, the stimulus voltage, the first voltage and the second voltage.
8. The locator of claim 1 wherein the processing component includes an analogue-to-digital converter operable to generate digital data from each of the respective stimulus, first and second voltages.
9. The locator of claim 1 wherein the apical foramen location data represents the location of a tip of a tool relative to a patient’s apical foramen.
10. The locator of claim 1 wherein:
the first voltage index is derived from the stimulus voltage and the first voltage; and
the second voltage index is derived from the stimulus voltage and the second voltage.
11. The locator of claim 10 wherein:
the first voltage index includes a ratio of the stimulus voltage to the first voltage and
the second voltage index includes a ratio of the stimulus voltage to the second voltage.
12. The locator of claim 1 wherein:
one of the electrodes is connected to a tool inserted into the a root canal of a patient’s tooth; and
the display includes at least one of the following:
a visual display that indicates the location of a tip of the tool relative to the patient’s apical foramen; and
an aural display that includes sounds to indicate the location of a tip of the tool relative to the patient’s apical foramen.
13. The locator of claim 1 further comprising a mode button operable to select an impedance map that the processing component uses to select apical foramen location data.
14. A method for locating an apical foramen of a patient’s tooth, comprising:
applying a stimulus voltage across two electrodes and a reference resistor, wherein one electrode contacts a tool inserted into the root canal of the patient and the other electrode contacts another region of the patient;
sensing the stimulus voltage, a first voltage across the two electrodes and a second voltage across the reference resistor; and
deriving a first and second voltage index from the stimulus, first and second voltages; and
selecting from an impedance map apical foramen location data that corresponds to the combination of the first and second voltage indices.
15. The method of claim 14 wherein another region of the patient includes the lip of the patient.
16. The method of claim 14 wherein:
deriving the first voltage index includes deriving a ratio between the stimulus and first voltages; and
deriving the second voltage index includes deriving a ratio between the stimulus and second voltages.
17. The method of claim 14 further comprising displaying the selected apical foramen location data.
18. The method of claim 17 wherein displaying the selected apical foramen data includes at least one of the following:
presenting at least one of the following: text and images;
turning on a light; and
providing a sound.
19. The method of claim 14 further comprising:
moving the tool toward the apical foramen of the patient’s tooth; and
reading the stimulus voltage, the first voltage and the second voltage as the tool is moved.
20. The method of claim 14 further comprising selecting an impedance map.
21. The method of claim 14 further comprising selecting an impedance map generated by reference teeth having at least one of the following, the same or substantially the same physical geometry as the patient’s tooth and the same or substantially the same abnormality as the patient’s tooth.
22. The method of claim 21 wherein selecting an impedance map includes comparing at least one of the following characteristics of a patient’s tooth, physical geometry and abnormality, to a respective characteristic of the reference teeth used to generate the impedance map.
23. The method of claim 14 further comprising:
inserting a tool into a root canal of the patient’s tooth; and
contacting the tool with an electrode.
24. An impedance map generated from reference teeth for use with an apical foramen locator, comprising:
first voltage indices;
second voltage indices; and
apical foramen location data corresponding to a combination of one of the first and one of the second voltage indices.
25. The map of claim 24 wherein the reference teeth include at least one of the following teeth: molars, bicuspids, cuspids and incisors.
26. The map of claim 24 wherein the reference teeth are normal.
27. The map of claim 24 wherein the reference teeth include at least one of the following abnormalities, at least one accessory canal, at least one lateral canal, at least one filling, tooth decay and an absence of an apical constriction.
28. The method of claim 24 wherein the reference teeth include the same or substantially the same physical geometry.
29. A method for generating an impedance map from reference teeth for use with an apical foramen locator, comprising:
applying a voltage across two electrodes and a reference resistor, wherein one electrode contacts a tool inserted into the root canal of one of the reference teeth and the other electrode contacts a surface of the same reference tooth;
sensing the voltage across the two electrodes and the reference resistor; recording voltage indices derived from the applied voltage and the sensed voltages;
recording the distance between the tool inserted into the root canal and the tooth’s apical foramen;
moving the inserted tool toward the reference tooth’s apical foramen; and repeating the acts.
30. The method of claim 29 further comprising repeating the process using another one of the reference teeth.