All The Claims

1. Dispensing device for the dispensing of coffee andor milk andor milk foam, which comprises:
a fluid duct group for the supply of several fluids, which fluid duct group comprises at least a first fluid duct for the supply of coffee and a second fluid duct for the supply of steam, wherein the first fluid duct opens out into at least one coffee discharge pipe and the second fluid duct has an outlet opening for the steam;
a mixing arrangement for the mixing of milk with steam andor air, which mixing arrangement has a chamber, a milk duct for the supply of milk into the chamber, an air duct for the supply of air into the chamber, an inlet opening for the supply of steam into the chamber, and a discharge pipe for the dispensing of milk andor milk foam out from the chamber;
a housing which at least partially surrounds the fluid duct group, the respective coffee discharge pipe and the mixing arrangement,
wherein the mixing arrangement is able to be brought into a first predetermined position relative to the second fluid duct, in which position a fluid connection is produced between the outlet opening of the second fluid duct and the inlet opening of the mixing arrangement for the supply of steam into the chamber,
wherein the housing comprises at least a first housing part and a second housing part,
wherein the fluid duct group is arranged on the first housing part or is constructed in the first housing part,
wherein a recess to receive the mixing arrangement is constructed in the second housing part, the recess in the second housing part being configured to enable the mixing arrangement to be inserted into the recess such that the mixing arrangement is held at the second housing part in a second predetermined position relative to the second housing part, and
wherein, if the mixing arrangement is received into the recess in the second housing part such that the mixing arrangement is held at the second housing part in the second predetermined position, the second housing part is configured to be placeable together with the mixing arrangement with respect to the first housing part so that the first housing part and the second housing part are able assembled together such that the mixing arrangement assumes the first predetermined position relative to the second fluid duct.
2. Dispensing device according to claim 1, in which the fluid duct group further contains a third fluid duct for the supply of hot water, which opens out into a hot water discharge pipe guided out from the first housing part.
3. Dispensing device according to claim 1, in which the first housing part comprises at least one guidance element and the second housing part a counter-guidance element, wherein on assembling together the first housing part and the second housing part, the respective guidance element is able to be brought into engagement with the counter-guidance element such that the first housing part and the second housing part are guided respectively against each other along a predetermined path.
4. Dispensing device according to claim 3, in which the guidance element and the counter-guidance element are constructed such that the guidance element is only able to be brought into engagement with the counter-guidance element when the second housing part is situated in a predetermined position relative to the first housing part.
5. Dispensing device according to claim 1, in which the second housing part contains a guidance arrangement which is designed such that the respective coffee discharge pipe on assembling together of the first housing part and of the second housing part is able to be brought into engagement at least partially with the guidance arrangement.
6. Dispensing device according to claim 1, in which the first housing part or the second housing part contains at least one snap connection arrangement with a catch, which is able to be brought into engagement with an engaging section which is constructed or arranged on the other respective housing part.
7. Dispensing device according to claim 1, in which the mixing arrangement contains a guidance section and the second housing part comprises a recess, wherein the recess is shaped such that the guidance section is able to be brought into a secure engagement with the recess.
8. Dispensing device according to claim 7, wherein the milk duct comprises an end section with an inlet opening for milk and the guidance section is arranged on this end section.
9. Dispensing device according to claim 1, in which the respective coffee discharge pipe is constructed in a body which contains an electric light source on an end section.
10. Dispensing device according to claim 1, in which the second housing part contains a first opening, through which an end section of the discharge pipe for the dispensing of milk andor milk foam is able to be inserted, and a second opening, through which an end section of the respective coffee discharge pipe is able to be inserted.
11. Drink preparation machine with a dispensing device according to claim 1, wherein the first housing part is fastened on a housing wall of the drink preparation machine.
12. Drink preparation machine according to claim 11, wherein the dispensing device is arranged so as to be vertically adjustable.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A vehicle restraint adjuster comprising:
a guide having a coefficient of friction;
a support for a vehicle restraint, said support movable along said guide;
a securing member for securing said guide to a vehicle body, said securing member selectively actuable between a first position interfering with movement of said support through a predetermined point on said guide and a second position permitting movement of said support through said predetermined point;
a track surface disposed between said support and said guide, said track surface having a lower coefficient of friction than the coefficient of friction of said guide; and
a control feature for selectively actuating said securing member between said first position and said second position, said control feature comprising a control member having a first condition for maintaining said securing member at said first position and having a second condition for permitting said securing member to move to said second position.
2. The vehicle restraint adjuster of 1 wherein said track surface has said control member incorporated therein.
3. The vehicle restraint adjuster of claim 2 wherein said control member maintains said securing member above said track surface in said first condition and allows said securing member to pass beneath said track surface in said second condition.
4. The vehicle restraint adjuster of claim 3 wherein said track surface has a hole therein to receive said securing member, said control member controlling movement of said securing member received in said hole between said first position and said second position.
5. The vehicle restraint adjuster of claim 4 further comprising a shoulder for supporting said securing member in said hole, said control member in said first condition supporting said securing member above said shoulder and said control member in said second condition allowing said securing member to rest on said shoulder.
6. The vehicle restraint adjuster of claim 1 wherein said securing member comprises a bolt.
7. The vehicle restraint adjuster of claim 1 wherein said guide comprises a rail.
8. The vehicle restraint adjuster of claim 7 wherein said support comprises a slide, slideably received on said rail.
9. The vehicle restraint adjuster of claim 1 further comprising a support actuator for selectively locking and unlocking said support.
10. A vehicle restraint adjuster comprising:
a rail having a coefficient of friction;
a slide for supporting a vehicle restraint, said slide slideably movable along said rail;
a track surface disposed between said slide and said rail, said track surface having a lower coefficient of friction than said rail;
a securing member for securing said rail to a vehicle body, said securing member selectively actuable between a first position interfering with movement of said slide through a predetermined point on said guide and a second position permitting movement of said slide through said predetermined point; and
a control feature for selecting actuating said securing member between said first position and said second position, said control feature comprising a control member having a first condition for maintaining said securing member at said first position and having a second condition for permitting said securing member to move to said second position.
11. The vehicle restraint adjuster of 10 wherein said track surface has said control member incorporated therein.
12. The vehicle restraint adjuster of claim 11 wherein said control member maintains said securing member above said track surface in said first condition and allows said securing member to pass beneath said track surface in said second condition.
13. The vehicle restraint adjuster of claim 12 wherein said track surface has a hole therein to receive said securing member, said control member controlling movement of said securing member received in said hole between said first position and said second position.
14. The vehicle restraint adjuster of claim 13 further comprising a shoulder for supporting said securing member in said hole, said control member in said first condition supporting said securing member above said shoulder and said control member in said second condition allowing said securing member to rest on said shoulder.
15. A method of manufacturing a vehicle restraint adjuster, comprising the steps of:
disposing a slide on a rail to move along the rail, the rail having a hole therein for receiving a securing member for securing the rail to a vehicle body;
inserting the securing member into the hole; and
selectively supporting the securing member in either a first position in the hole blocking movement of the slide along the rail or a second position in the hole that does not block movement of the slide along the rail.

1. A domain authentication method for exchanging content between devices, comprising the steps of:
setting domain identification information into a predetermined device connected on one of a wired network and a wireless network, and
generating a domain secret key using the set domain identification information.
2. A domain authentication method for exchanging content between devices, comprising the steps of:
setting domain identification information into a predetermined device connected on one of a wired network and a wireless network, and
generating a domain secret key using the set domain identification information and predetermined device identification information.
3. A domain authentication method for exchanging content between devices, comprising:
a first step of setting domain identification information into a predetermined device connected on one of a wired network and a wireless network;
a second step of generating a domain secret key using the set domain identification information and predetermined device identification information;
a third step of generating a predetermined first code value and transmitting a first packet encrypted with the first code value using the domain secret key generated in the second step;
a fourth step of receiving a second packet that is encrypted with the first code value, which has been decrypted from the first encrypted packet using the domain secret key generated in the second step, and a second code value generated by another device; and
a fifth step of decrypting the second packet received in the fourth step by using the domain secret key generated in the second step and determining whether a specific bit frame of the decrypted second packet is equal to the predetermined first code value generated in the third step.
4. The method as claimed in claim 3, wherein the domain secret key is set as a resultant value of a cryptographic one-way function whose input variables are the domain identification information and the device identification information.
5. The method as claimed in claim 3, wherein the domain secret key is set as a resultant value of a hash function whose input variables are the domain identification information and the device identification information.
6. The method as claimed in claim 3, wherein the first and second code values are predetermined bits of random numbers generated by the devices themselves, respectively.
7. The method as claimed in claim 3, wherein the fifth step further comprises the step of generating a session key to be used for content encryption when the specific bit frame of the second decrypted packet is equal to the predetermined first code value generated in the third step, or terminating a domain authentication process when the specific bit frame is not equal to the first code value.
8. The method as claimed in claim 3, wherein the fifth step further comprises the step of transmitting another specific bit frame, which is based on the second decrypted packet, when the specific bit frame of the decrypted packet is equal to the predetermined first code value generated in the third step.
9. A domain authentication method for exchanging content between devices, comprising;
a first step of performing mutual authentication for the devices using device identification information;
a second step of setting domain identification information into a predetermined device connected on one of a wired network and a wireless network;
a third step of generating a domain secret key using the set domain identification information and the predetermined device identification information;
a fourth step of generating a predetermined first code value and transmitting a first packet encrypted with the first code value using the domain secret key generated in the third step;
a fifth step of receiving a second packet that is encrypted with the first code value, which has been decrypted from the first encrypted packet using the domain secret key generated in the third step, and a second code value generated by another device; and
a sixth step of decrypting the second packet received in the fifth step by using the domain secret key generated in the third step and determining whether a specific bit frame of the decrypted second packet is equal to the predetermined first code value generated in the fourth step.
10. The method as claimed in claim 9, wherein the domain secret key is set as a resultant value of a cryptographic one-way function whose input variables are the domain identification information and the device identification information.
11. The method as claimed in claim 9, wherein the domain secret key is set as a resultant value of a hash function whose input variables are the domain identification information and the device identification information.
12. The method as claimed in claim 9, wherein the first and second code values are predetermined bits of random numbers generated by the devices themselves, respectively.
13. The method as claimed in claim 9, wherein the sixth step further comprises the step of generating a session key to be used for content encryption when the specific bit frame of the second decrypted packet is equal to the predetermined first code value generated in the fourth step, or terminating a domain authentication process when the specific bit frame is not equal to the first code value.
14. The method as claimed in claim 9, wherein the sixth step further comprises the step of transmitting another specific bit frame, which is based on the second decrypted packet, when the specific bit frame of the decrypted packet is equal to the predetermined first code value generated in the fourth step.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process for preparing a stressed semiconductor wafer, said process comprising:
providing a semiconductor wafer of a first material having a first crystalline lattice constant;
pseudomorphically forming a stressed crystalline layer of a second material having a different crystalline lattice constant from the first material on a surface of the semiconductor wafer;
etching a first via through the stressed crystalline layer and at least partially into the semiconductor wafer to release stress in the stressed crystalline layer adjacent the first via, thereby transferring stress to the semiconductor wafer and forming a stressed region in the semiconductor wafer;
filling the first via in the semiconductor wafer with a first filler material to impede dissipation of stress in the semiconductor wafer; and
removing the stressed crystalline layer after filling the first via in the semiconductor wafer.
2. A process for preparing a device including a stressed semiconductor wafer, said process comprising:
providing a semiconductor wafer of a first material having a first crystalline lattice constant;
pseudomorphically forming a stressed crystalline layer of a second material having a different lattice constant from the first material on a surface of the semiconductor wafer;
etching a first via through the stressed crystalline layer and at least partially into the semiconductor wafer to release stress in the stressed crystalline layer adjacent the first via, thereby transferring stress to the semiconductor wafer and forming a stressed region in the semiconductor wafer;
filling the first via in the stressed semiconductor wafer with a first filler material to impede dissipation of stress in the stressed region of the semiconductor wafer;
removing the stressed crystalline layer after filling the first via in the semiconductor wafer; and
forming a transistor on the stressed semiconductor wafer within the stressed region thereof.
3. The process of claim 2, further comprising forming at least one level of interconnect routing over the transistor on the semiconductor wafer.
4. (canceled)
5. (canceled)
6. The process of claim 2, wherein the second material has a greater crystalline lattice constant than the first material and wherein pseudomorphically forming the stressed crystalline layer of the second material on the surface of the semiconductor wafer comprises pseudomorphically forming the stressed crystalline layer under compressive stress on the surface of the semiconductor wafer.
7. The process of claim 6, wherein providing the semiconductor wafer comprises providing a silicon-containing wafer and wherein pseudomorphically forming the stressed crystalline layer comprises pseudomorphically forming a silicon germanium layer on the surface of the silicon-containing wafer.
8. The process of claim 7, wherein providing the silicon-containing wafer comprises providing the silicon-containing wafer comprising silicon in an amount of from about 95 to about 100 mol % based upon the total amount of atoms in the silicon-containing wafer and wherein pseudomorphically forming the silicon germanium layer is further defined as pseudomorphically forming the silicon germanium layer having a germanium content of from about 20 to about 40 mol % based upon the total amount of atoms in the silicon germanium layer.
9. The process of claim 7, wherein providing the silicon-containing wafer comprises providing the silicon-containing wafer having a thickness of from about 50 to about 1500 nm and wherein pseudomorphically forming the silicon germanium layer comprises pseudomorphically forming the silicon germanium layer having a thickness of from about 50 to about 1500 nm.
10. The process of claim 2, wherein the second material has a lesser crystalline lattice constant than the first material and wherein pseudomorphically forming the stressed crystalline layer of the second material on the surface of the semiconductor wafer comprises pseudomorphically forming the stressed crystalline layer under tensile stress on the surface of the semiconductor wafer.
11. The process of claim 10, wherein providing the semiconductor wafer comprises providing a silicon-containing wafer and wherein pseudomorphically forming the stressed crystalline layer comprises pseudomorphically forming a silicon carbide layer on the surface of the silicon-containing wafer.
12. The process of claim 11, wherein providing the silicon-containing wafer comprises providing the silicon-containing wafer comprising silicon in an amount of from about 95 to about 100 mol % based upon the total amount of atoms in the silicon-containing wafer and wherein pseudomorphically forming the silicon carbide layer is further defined as pseudomorphically forming the silicon carbide layer having a carbon content of from about 20 to about 40 mol % based upon the total amount of atoms in the silicon carbide layer.
13. The process of claim 11, wherein providing the silicon-containing wafer comprises providing the silicon-containing wafer having a thickness of from about 50 to about 1500 nm and wherein pseudomorphically forming the silicon carbide layer comprises pseudomorphically forming the silicon carbide layer having a thickness of from about 50 to about 1500 nm.
14. The process of claim 2, wherein providing the semiconductor wafer comprises providing the semiconductor wafer formed from the first material chosen from silicon germanium, germanium, gallium arsenide, or indium phosphide.
15. The process of claim 2, wherein etching the first via through the stressed crystalline layer and at least partially into the semiconductor wafer comprises etching the first via into the semiconductor wafer to a depth of from about 10 to about 100 nm from the surface of the semiconductor wafer, provided that the first via is only partially etched into the semiconductor wafer.
16. The process of claim 2, wherein filling the first via in the semiconductor wafer is further defined as epitaxially forming crystalline filler material in the first via.
17. The process of claim 2, wherein filling the first via in the semiconductor wafer is further defined as filling the first via in the semiconductor wafer with an electrically-conductive material.
18. The process of claim 2, further comprising etching a second via through the stressed crystalline layer and at least partially into the semiconductor wafer, with the stressed region of the semiconductor wafer disposed between the first via and the second via, to release stress in the stressed crystalline layer adjacent the second via.
19. The process of claim 18, further comprising filling the second via in the semiconductor wafer with a second filler material to further impede dissipation of stress in the stressed region of the semiconductor wafer.
20. A process for preparing a stressed semiconductor wafer, said process comprising:
providing a semiconductor wafer of a first material having a first crystalline lattice constant;
pseudomorphically forming a stressed crystalline layer of a second material having a different lattice constant from the first material on a surface of the semiconductor wafer;
etching a first via and a second via through the stressed crystalline layer and at least partially into the semiconductor wafer to release stress in the stressed crystalline layer adjacent the first via, thereby transferring stress to the semiconductor wafer and forming a stressed region in the semiconductor wafer with the stressed region of the semiconductor wafer disposed between the first via and the second via; and
filling the first via and the second via in the semiconductor wafer with a first filler material and a second filler material to impede dissipation of stress in the semiconductor wafer;
removing the stressed crystalline layer from the semiconductor wafer after filling the first via and the second via in the semiconductor wafer.