All The Claims

1. A method for forming a metalsemiconductormetal (MSM) current limiter, the method comprising:
providing a substrate;
forming an MSM bottom electrode overlying the substrate;
forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and,
forming an MSM top electrode overlying the semiconductor layer.
2. The method of claim 1 wherein forming the ZnOx semiconductor layer overlying the MSM bottom electrode includes forming the ZnOx from a process selected from the group comprising spin-coating, direct current (DC) sputtering, radio frequency (RF) sputtering, metalorganic chemical vapor deposition (MOCVD), and atomic layer deposition (ALD).
3. The method of claim 2 wherein the ZnOx semiconductor layer is formed using a spin-coating process;
the method further comprising:
prior to spin-coating the ZnOx, preparing a ZnOx precursor as follows:
preparing a solution of 2-methyloxyethanol and ethanolamine;
dissolving zinc acetate dehydrate in the solution;
refluxing the solution at a temperature in the range of about 110 to 150\xb0 C., for a time duration in the range of about 20 to 60 minutes; and,
filtering the solution to remove particles larger than about 0.2 micrometers.
4. The method of claim 1 wherein forming the ZnOx semiconductor layer overlying the MSM bottom electrode includes forming a ZnOx layer having a C-axis orientation.
5. The method of claim 2 wherein spin-coating ZnOx overlying the MSM bottom electrode includes:
spin-coating a ZnOx film at a spin-rate in the range of about 1000 to 4000 revolutions per minute (RPM);
baking the ZnOx film;
annealing the ZnOx film in an atmosphere selected from the group comprising dry air, an insert gas selected from the group comprising N2 and Ar with an oxygen partial pressure, and pure oxygen; and, reiterating the process to form a number of ZnOx layers in the range between about 2 and 20, inclusive.
6. The method of claim 2 wherein depositing ZnOx using the DC sputtering process includes using a target selected from the group including Zn and ZnO.
7. The method of claim 6 wherein depositing ZnOx using the DC sputtering process includes DC sputtering in an atmosphere selected from the group comprising with oxygen and without oxygen.
8. The method of claim 7 wherein DC sputtering includes, subsequent to forming a ZnOx layer, annealing at a temperature in the range between about 400 and 500\xb0 C., for a time duration in the range of about 5 to 60 minutes, in an atmosphere selected from the group including dry air and pure oxygen.
9. The method of claim 7 wherein DC sputtering includes:
using a sputtering power in the range of about 100 to 300 watts;
depositing for a time duration in the range of about 1 to 60 minutes;
using a deposition temperature in the range of about 20 to 300\xb0 C.;
sputtering in an atmosphere including an inert gas and about 0 to 30% oxygen; and, using a deposition pressure in the range of about 2 to 10 milliTorr.
10. The method of claim 1 wherein forming the ZnOx semiconductor layer overlying the MSM bottom electrode comprises forming a ZnOx layer having a thickness in the range of about 10 to 1000 nanometers.
11. The method of claim 1 wherein forming the MSM top and bottom electrodes includes forming electrodes having a thickness in the range of about 30 to 200 nanometers (nm).
12. The method of claim 2 wherein depositing ZnOx using a process selected from the group including MOCVD and ALD includes:
supplying a dimethyl zinc (DMZn) precursor;
supplying an oxygen partial pressure in the range of about 10 to 90%;
creating a deposition pressure in the range between about 10 mTorr and 100 mTorr;
growing ZnO at a temperature in the range of about 100 to 500\xb0 C., without preheating the substrate;
depositing for a time duration in the range of about 100 seconds to 1 hour; and,
annealing at a temperature in the range of about 400 to 500\xb0 C. for a time duration in the range of about 5 to 60 minutes, at an oxygen partial pressure in the range of about 10 to 30%.
13. A method for forming a resistance memory device with metalsemiconductormetal (MSM) current limiter, the method comprising:
forming a memory resistor bottom electrode;
forming a memory resistor material overlying the memory resistor bottom electrode;
forming a memory resistor top electrode overlying the memory resistor material;
forming an MSM bottom electrode overlying the memory resistor top electrode;
forming a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and,
forming an MSM top electrode overlying the semiconductor layer.
14. The method of claim 13 wherein forming the memory resistor material overlying the memory resistor bottom electrode includes forming the memory resistor from a material selected from the group comprising Pr0.3Ca0.7MnO3 (PCMO), colossal magnetoresistive (CMR) film, transition metal oxides, Mott insulators, high-temperature super conductor (HTSC), and perovskite materials.
15. A resistance memory device with a metalsemiconductormetal (MSM) current limiter, the device comprising:
a memory resistor bottom electrode;
a memory resistor material overlying the memory resistor bottom electrode;
a memory resistor top electrode overlying the memory resistor material;
an MSM bottom electrode overlying the memory resistor top electrode;
a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and,
an MSM top electrode overlying the semiconductor layer.
16. The device of claim 15 wherein the memory resistor material is a material selected from the group comprising Pr0.3Ca0.7MnO3 (PCMO), colossal magnetoresistive (CMR) film, transition metal oxides, Mott insulators, high-temperature super conductor (HTSC), and perovskite materials.
17. A metalsemiconductormetal (MSM) current limiter, the MSM current limiter comprising:
a substrate;
an MSM bottom electrode overlying the substrate;
a ZnOx semiconductor layer overlying the MSM bottom electrode, where x is in the range between about 1 and about 2, inclusive; and,
an MSM top electrode overlying the semiconductor layer.
18. The MSM current limiter of claim 17 wherein the ZnOx semiconductor layer has a C-axis orientation.
19. The MSM current limiter of claim 17 wherein the ZnOx semiconductor layer has a thickness in the range of about 10 to 1000 nanometers (nm).
20. The MSM current limiter of claim 17 wherein the MSM top and bottom electrodes each have a thickness in the range of about 30 to 200 nm.
21. The MSM current limiter of claim 17 wherein the MSM top and bottom electrodes are a material selected from the group comprising Pt, Ir, Au, Ag, TiN, Ti, Al, ALCu, Pd, Rh, W, Cr, and conductive oxides.
22. A method for operating a metalsemiconductormetal (MSM) current limiter, the method comprising:
providing an MSM current limiter with a ZnOx semiconductor layer and a first terminal, where x is in the range between about 1 and about 2, inclusive;
supplying a first voltage, within a first voltage range, to the MSM current limiter terminal; and,
in response to first voltage, minimally inducing a non-linear first forward bias and a non-linear first reverse bias current flow through the MSM current limiter.
23. The method of claim 22 further comprising
supplying a second voltage, greater than the first voltage, to the MSM current limiter terminal; and,
inducing a linear forward bias current flow through the MSM current limiter.
24. The method of claim 22 further comprising
supplying a third voltage, less than the first voltage, to the MSM current limiter terminal; and,
inducing a linear reverse bias current flow through the MSM current limiter.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A disk recording andor reproducing apparatus comprising:
a main body comprising a motor accommodated therein for rotating a disk;
a cover coupled with the main body;
a closable opening defined between the cover and the main body for the disk being loadedunloaded therethrough;
at least one first disrupting portion protruding from the cover towards the main body for disrupting airflow generated by the rotating disk; and
at least one guiding portion protruding from the cover towards the main body for guiding the airflow.
2. The disk recording andor reproducing apparatus as claimed in claim 1, wherein the at least one guiding portion is adjacent to the opening, the at least one guiding portion is configured in a path that guides the airflow towards the opening before deflecting to the at least one first disrupting portion.
3. The disk recording andor reproducing apparatus as claimed in claim 2, wherein the at least one guiding portion is juxtaposed with the at least one first disrupting portion, the at least one guiding portion and the at least one first disrupting portion are positioned at the same side of the opening, the airflow flowing towards the opening is then deflected to the at least one first disrupting portion for being further disrupted.
4. The disk recording andor reproducing apparatus as claimed in claim 3, wherein the at least one guiding portion is parallel to the at least one first disrupting portion.
5. The disk recording andor reproducing apparatus as claimed in claim 4, wherein an angle defined by a longitudinal center axis of the at least one guiding portion and a path the disk is loaded in is greater than 0 degree and less than 90 degrees.
6. The disk recording andor reproducing apparatus as claimed in claim 1, wherein the at least one guiding portion and the at least one first disrupting portion are arranged within an annulus on the cover, an inner radius of the annulus is approximately 0.5 multiplied a radius of the disk, an outer radius of the annulus is approximately 1.1 multiplied the radius of the disk.
7. The disk recording andor reproducing apparatus as claimed in claim 1, further comprising at least one second disrupting portion protruding from the cover towards the main body and extending along a radial direction of the disk for disrupting the airflow, the at least one second disrupting portion being diagonally arranged with respect to the at least guiding portion.
8. The disk recording andor reproducing apparatus as claimed in claim 7, further comprising and at least one third disrupting portion protruding from the cover towards the main body and extending along a radial direction of the disk for disrupting the airflow, the at least one third disrupting portion being diagonally arranged with respect to the at least first disrupting portion.
9. The disk recording andor reproducing apparatus as claimed in claim 8, wherein a longitudinal length of at least one guiding portion is substantially greater than those of the at least one second disrupting portion and the at least one third disrupting portion.
10. The disk recording andor reproducing apparatus as claimed in claim 1, wherein a longitudinal length of the at least one guiding portion substantially equals to that of the at least one first disrupting portion.
11. A vibration damping structure comprising:
a plate;
at least one first disrupting protrusion formed on a bottom side of the plate for disrupting airflow caused by a rotation disk under the plate; and
at least one guiding protrusion formed on the bottom side of the plate for guiding the airflow.
12. The vibration damping structure as claimed in claim 11, wherein a first and a second sidewalls respectively perpendicularly extending from two adjacent peripheries of the plate for shielding the at least one guiding protrusion.
13. The vibration damping structure as claimed in claim 12, wherein the at least one guiding protrusion is adjacent to the first sidewall, the at least one guiding protrusion is configured in a path that guides the airflow towards the first sidewall before deflecting to the at least one disrupting protrusion.
14. The vibration damping structure as claimed in claim 13, wherein the at least one guiding protrusion is juxtaposed with the at least one first disrupting protrusion, the at least one guiding protrusion and the at least one first disrupting protrusion are positioned at the same side of the first sidewall.
15. The vibration damping structure as claimed in claim 14, wherein the at least one guiding protrusion is parallel to the at least one first disrupting protrusion.
16. The vibration damping structure as claimed in claim 14, wherein a longitudinal center axis of the at least one guiding protrusion, the first sidewall and the second sidewall are capable of defining a triangle.
17. The vibration damping structure as claimed in claim 11, wherein the at least one guiding protrusion and the at least one first disrupting protrusion are arranged within an annulus on the cover, an inner radius of the annulus is approximately 0.5 multiplied a radius of the disk, an outer radius of the annulus is approximately 1.1 multiplied the radius of the disk.
18. The vibration damping structure as claimed in claim 11, further comprising at least one second disrupting protrusion protruding from the cover towards the main body and extending along a radial direction of the disk for disrupting the airflow, the at least one second disrupting protrusion being diagonally arranged with respect to the at least guiding protrusion.
19. The vibration damping structure as claimed in claim 18, further comprising and at least one third disrupting protrusion protruding from the cover towards the main body and extending along a radial direction of the disk for disrupting the airflow, the at least one third disrupting protrusion being diagonally arranged with respect to the at least first disrupting protrusion.
20. The vibration damping structure as claimed in claim 19, wherein longitudinal lengths of the at least one guiding protrusion and the at least one first disrupting protrusion are substantially greater than those of the at least one second disrupting protrusion and the at least one third disrupting protrusion.

1. A computer-implemented method, comprising:
performing face detection, using a processor, on a plurality of images to identify a plurality of faces;
activating a subset of the plurality of faces, including by loading data associated with the subset of faces into a processing memory, wherein at least one of the plurality of faces is un-activated, including by keeping data associated with the at least one of the plurality of faces out of the processing memory;
calculating a distance for each pair of activated faces, wherein the distance is associated with a measure of a similarity between a first face and a second face;
clustering the activated faces into a plurality of groups based at least in part on the distances;
reducing an amount of information loaded in the processing memory, including by modifying data associated with at least one of the plurality of groups; and
after reducing, activating at least one un-activated face, including by loading data associated with the at least one un-activated face into the processing memory.
2. The method of claim 1, where activating the subset is initiated when face detection has completed for one or more of the following: a predefined number of images or for a predefined number of faces.
3. The method of claim 1, wherein activating the subset is based at least in part on one or more of the following: whether another face in the same image is activated, whether another face having a similar timestamp is activated, whether an image is selected by a user, or if a face has better quality information than another face.
4. The method of claim 1, wherein activating the subset includes activating a predefined number of faces.
5. The method of claim 1, wherein calculating the distance includes: in the event a first face is associated with a first label and a second face is associated with a second label, which is different from the first label, setting a distance between the first face and the second face to one or more of the following: an infinite value or a maximum value.
6. The method of claim 1, wherein calculating the distance includes: in the event a first face and a second face are associated with a same image, setting a distance between the first face and the second face to one or more of the following: an infinite value or a maximum value.
7. The method of claim 1 further comprising receiving at least one label in response to displaying.
8. The method of claim 7 further comprising displaying an unlabeled face with a suggested label.
9. The method of claim 7 further comprising reducing an amount of information associated with a first face and a second face that are assigned a same label.
10. The method of claim 9, wherein reducing the amount of information includes generating composite information based at least in part on information associated with the first face and information associated with the second face.
11. The method of claim 9, wherein reducing the amount of information includes:
selecting either information associated with the first face or information associated with the second face;
retaining the selected information; and
discarding the unselected information.
12. A system, comprising:
a processor; and
a memory coupled with the processor, wherein the memory is configured to provide the processor with instructions which when executed cause the processor to:
perform face recognition processing on a plurality of images to identify a plurality of faces;
activate a subset of the plurality of faces, including by loading data associated with the subset of faces into a processing memory, wherein at least one of the plurality of faces is un-activated, including by keeping data associated with the at least one of the plurality of faces out of the processing memory;
calculate a distance for each pair of activated faces, wherein the distance is associated with a measure of a similarity between a first face and a second face;
cluster the activated faces into a plurality of groups based at least in part on the distances;
reduce an amount of information loaded in the processing memory, including by modifying data associated with at least one of the plurality of groups; and
after reducing, activate at least one un-activated face, including by loading data associated with the at least one un-activated face into the processing memory.
13. The system of claim 12, wherein activating is based at least in part on one or more of the following: whether another face in the same image is activated, whether another face having a similar timestamp is activated, whether an image is selected by a user, or if a face has better quality information than another face.
14. The system of claim 12, wherein the instructions for calculating the distance include instructions for: in the event a first face is associated with a first label and a second face is associated with a second label which is different from the first label, setting a distance between the first face and the second face to one or more of the following: an infinite value or a maximum value.
15. The system of claim 12, wherein the instructions for calculating the distance include instructions for: in the event a first face and a second face are associated with a same image, setting a distance between the first face and the second face to one or more of the following: an infinite value or a maximum value.
16. A computer program product the computer program product being embodied in a non-transitory computer readable storage medium and comprising computer instructions for:
performing face recognition processing, on a plurality of images to identify a plurality of faces;
activating a subset of the plurality of faces, including by loading data associated with the subset of faces into a processing memory, wherein at least one of the plurality of faces is un-activated, including by keeping data associated with the at least one of the plurality of faces out of the processing memory;
calculating a distance for each pair of activated faces, wherein the distance is associated with a measure of a similarity between a first face and a second face;
clustering the activated faces into a plurality of groups based at least in part on the distances;
reducing an amount of information loaded in the processing memory, including by modifying data associated with at least one of the plurality of groups; and
after reducing, activating at least one un-activated face, including by loading data associated with the at least one un-activated face into the processing memory.
17. The computer program product of claim 16 further comprising computer program instructions for:
receiving at least one label in response to displaying; and
reducing an amount of information associated with a first face and a second face that are assigned a same label.
18. The computer program product of claim 17, wherein reducing the amount of information includes:
selecting either information associated with the first face or information associated with the second face;
retaining the selected information; and
discarding the unselected information.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. Non-slip footwear comprising:
a main body formed of a flexible material and formed to surround the sole of a foot of a user and to open the top side of the foot;
toe insertion holes formed of the flexible material, protruding from the front part of the main body so that toes of the foot are respectively inserted into the toe insertion holes;
an non-slip outsole formed at the heel part of the main body and formed of foamed rubber having abrasion resistance, and having a thickness of 1 mm\u02dc5 mm; and
non-slip dots formed at the sole part of the main body and the non-slip outsole (30).
2. The non-slip footwear according to claim 1, wherein the flexible material is a synthetic fiber having flexibility.
3. The non-slip footwear according to claim 1, wherein acupressure protrusions protrude from the inner surface of the main body.
4. The non-slip footwear according to claim 1, wherein the front parts of the toe insertion holes are opened so that the front parts of the toes protrude outward from the non-slip footwear.
5. The non-slip footwear according to claim 1, wherein toe corrective inserts formed of silicon and having elasticity and shape stability are formed at areas between the toes of the toe insertion holes.
6. The non-slip footwear according to claim 1, wherein bending parts having elasticity are formed at the end of the top part of the main body and the ends of the front parts of the toe insertion holes.
7. The non-slip footwear according to claim 2, wherein acupressure protrusions protrude from the inner surface of the main body.
8. The non-slip footwear according to claim 2, wherein the front parts of the toe insertion holes are opened so that the front parts of the toes protrude outward from the non-slip footwear.
9. The non-slip footwear according to claim 2, wherein toe corrective inserts formed of silicon and having elasticity and shape stability are formed at areas between the toes of the toe insertion holes.
10. The non-slip footwear according to claim 4, wherein toe corrective inserts formed of silicon and having elasticity and shape stability are formed at areas between the toes of the toe insertion holes.
11. The non-slip footwear according to claim 2, wherein bending parts having elasticity are formed at the end of the top part of the main body and the ends of the front parts of the toe insertion holes.