All The Claims

1. An operation instructing device included in a portable apparatus, said device comprising:
an area setting unit operable to set a movement detection area for a specific user, based on motion values resulting from movements unique to the user;
an instructing unit operable, when in a setting mode, to instruct a plurality of movements, the setting mode being a state in which the area setting unit is activated;
a detecting unit operable to detect, for each of the instructed movements, motion values of the portable apparatus that result from user movements in accordance with the instructed movements; and
an assigning unit operable to assign each of a plurality of operation instructions relating to a function of the portable apparatus to different sub areas of the movement detection area.
2. An operation instructing device according to claim 1, wherein
the detecting unit is a gyroscope, and
the assigning unit assigns each of the operation instructions to a different sub area, the operation instructions being for rotating a viewing direction of an image displayed on a screen of the portable apparatus, based on angular accelerations detected by the gyroscope.
3. An operation instructing device according to claim 1, wherein
the instructed movements are repeated a number of times, and include shaking movements of a strong strength and a weak strength in directions that are positive and negative along each of three axes of a three-dimensional space,
the detecting unit is a three-dimensional acceleration sensor, and
the area setting unit includes:
an average value calculating subunit operable to store, for each time that each shaking movement is repeated, a maximum value of acceleration values detected by the sensor within a predetermined time period, and to calculate an average value for each shaking movement in each direction from the stored maximum values;
a threshold calculating subunit operable to calculate, using an equation, lower and upper thresholds for each direction, based on the calculated average values for the weak and strong shaking movements in the direction; and
a setting subunit operable to set the range between the lower and upper thresholds in each direction as one of the sub areas of the movement detection area.
4. An operation instructing device according to claim 3, further comprising:
a judging unit operable to judge, when in a mode other than the setting mode, within which sub area each motion value detected by the detecting unit falls; and
an instruction outputting unit operable to output, to the portable apparatus, the operation instruction assigned to the sub area within which the detected motion value is judged to fall.
5. An operation instructing device according to claim 4, further comprising:
an updating unit operable, when the motion value deviates from any of the sub areas, and the deviation is less than a predetermined value, to shift lower and upper thresholds of the sub area by the amount of the deviation.
6. An operation instructing device according to claim 3, wherein the threshold calculating unit uses equations:
LowTh
=
AvMxAcc
\u2062
\u2062

(

dir
,
w

)
–
AvMxAcc
\u2062
\u2062

(

dir
,
s

)
–

AvMxAcc
\u2062
\u2062

(

dir
,
w

)
2
and
UpTh
=
AvMxAcc
\u2062
\u2062

(

dir
,
s

)
+

AvMxAcc
\u2062
\u2062

(

dir
,
w

)
2
,
where \u201cLowTh\u201d indicates the lower threshold, \u201cUpth\u201d indicates the upper threshold, \u201cAvMxAcc\u201d indicates the average value of maximum acceleration values, \u201cdir\u201d indicates a direction in which the user performed the movement, \u201cw\u201d indicates a weak movement, and \u201cs\u201d indicates a strong movement.
7. An operation instructing device according to claim 1, wherein
the assigning unit selects one of one-dimensional, two-dimensional, and three-dimensional movement detection areas, according to a total number and directions of the operation instructions, and assigns each of the operation instructions to a sub area in a matching direction with a direction that the assigned operation instruction indicates.
8. An operation instructing device according to claim 1, wherein
the detecting unit is a three-dimensional acceleration sensor, and
the area setting unit sets the movement detection area based on distances obtained by twice integrating acceleration values detected by the sensor.
9. A computer operation instructing program that executes an operation instructing method in which a sensor included in a portable apparatus detects motion values of the portable apparatus that result from user movements, the program comprising the steps of:
instructing a plurality of movements in a setting mode;
detecting, by the sensor, motion values of the portable apparatus that result from the user movements;
setting a movement detection area, based on motion values for each of the instructed movements;
assigning each of a plurality of operation instructions relating to a function of the portable apparatus to different sub areas of the movement detection area;
judging, when in a mode other than the setting mode, within which sub area the detected motion value falls; and
outputting, to the portable apparatus, the operation instruction assigned to the sub area within which the detected motion value is judged to fall.
10. An operation instructing method in which a sensor included in a portable apparatus detects motion values of the portable apparatus that result from user movements, the method comprising the steps of:
instructing a plurality of movements in a setting mode;
detecting, by the sensor, motion values of the portable apparatus that result from the user movements;
setting a movement detection area, based on motion values for each of the instructed movements;
assigning each of a plurality of operation instructions relating to a function of the portable apparatus to different sub areas of the movement detection area;
judging, when in a mode other than the setting mode, within which sub area the detected motion value falls; and
outputting, to the portable apparatus, the operation instruction assigned to the sub area within which the detected motion value is judged to fall.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A turbine blade comprising:
an airfoil including an airfoil outer wall extending longitudinally outwardly from a root,
pressure side and suction sides extending laterally from a leading edge to a trailing edge of the airfoil,
a squealer tip at a radially outer end of the airfoil,
the squealer tip including a radially outer tip cap attached to the airfoil outer wall,
a continuous squealer tip wall extending radially outwardly from and continuously around the tip cap forming a radially outwardly open tip cavity,
a recessed tip wall portion recessed inboard from the pressure side of the airfoil outer wall forming a tip shelf therebetween,
an internal cooling circuit extending longitudinally outwardly from the root to the tip cap bounded in part by the recessed tip wall portion, and
a plurality of film cooling shelf holes disposed through the tip shelf and extending through the recessed tip wall portion directly into the internal cooling circuit and spaced away from a junction between the recessed tip wall portion and the tip shelf.
2. A turbine blade as claimed in claim 1, further comprising:
the film cooling shelf holes having shelf hole centerlines passing through pierce points in the shelf angled at compound angles with respect to vertical lines passing through the pierce points,
the compound angles have orthogonal first and second component angles,
the first component angles lie in first planes defined by the vertical lines and first coordinate lines that are normal to the vertical lines and extend between the vertical lines and the recessed tip wall portion,
the second component angles lie in second planes defined by the vertical lines and second coordinate lines that are normal to the vertical lines and normal to the first coordinate lines, and
at least a majority of the shelf hole centerlines are angled in outboard directions away from and outboard of the squealer tip wall.
3. A turbine blade as claimed in claim 2, further comprising the shelf hole centerlines being angled at the second component angles in downstream lateral directions with respect to vertical lines wherein the downstream lateral directions are normal to corresponding ones of the outboard directions and the vertical lines.
4. A turbine blade as claimed in claim 2, wherein the first component angles lie in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
5. A turbine blade as claimed in claim 3, further comprising the shelf hole centerlines being spaced away from a fillet at the junction.
6. A turbine blade as claimed in claim 5, further comprising the film cooling shelf holes extending into the fillet no more than 50 percent of a fillet width of the fillet as measured along the tip shelf.
7. A turbine blade as claimed in claim 6, wherein the first component angle lies in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
8. A turbine blade as claimed in claim 2, wherein the majority of first component angles are in a range between 2 degrees and 16 degrees.
9. A turbine blade as claimed in claim 8, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
10. A turbine blade as claimed in claim 2, further comprising the pressure side of the airfoil outer wall including the recessed tip wall portion being angled away from the shelf hole centerlines in an inboard direction.
11. A turbine blade as claimed in claim 10, wherein the first component angles are in a range between 2 degrees and 16 degrees.
12. A turbine blade as claimed in claim 11, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
13. A turbine blade as claimed in claim 2, further comprising the turbine blade made with a nickel-base superalloy having a free sulfur content less than about 1 part per million by weight.
14. A turbine blade as claimed in claim 13, further comprising the shelf hole centerlines being angled at the second component angles in downstream lateral directions with respect to vertical lines wherein the downstream lateral directions are normal to corresponding ones of the outboard directions and the vertical lines.
15. A turbine blade as claimed in claim 13, wherein the first component angles lie in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
16. A turbine blade as claimed in claim 14, further comprising the shelf hole centerlines being spaced away from a fillet at the junction.
17. A turbine blade as claimed in claim 16, further comprising the film cooling shelf holes extending into the fillet no more than 50 percent of a fillet width of the fillet as measured along the tip shelf.
18. A turbine blade as claimed in claim 17, wherein the first component angle lies in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
19. A turbine blade as claimed in claim 13, wherein the majority of first component angles are in a range between 2 degrees and 16 degrees.
20. A turbine blade as claimed in claim 19, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
21. A turbine blade as claimed in claim 13, further comprising the pressure side of the airfoil outer wall including the recessed tip wall portion being angled away from the shelf hole centerlines in an inboard direction.
22. A turbine blade as claimed in claim 21, wherein the first component angles are in a range between 2 degrees and 16 degrees.
23. A turbine blade as claimed in claim 22, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
24. A turbine blade as claimed in claim 2, further comprising a thermal barrier coating on inboard and outboard sides of the squealer tip wall, a radially outwardly facing surface of the tip cap within the squealer tip wall, and a flat top of the squealer tip wall.
25. A turbine blade as claimed in claim 24, further comprising the turbine blade made with a nickel-base superalloy having a free sulfur content less than about 1 part per million by weight.
26. A turbine blade as claimed in claim 25, further comprising the shelf hole centerlines being angled at the second component angles in downstream lateral directions with respect to vertical lines wherein the downstream lateral directions are normal to corresponding ones of the outboard directions and the vertical lines.
27. A turbine blade as claimed in claim 26, wherein the first component angles lie in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
28. A turbine blade as claimed in claim 27, further comprising the shelf hole centerlines being spaced away from a fillet at the junction.
29. A turbine blade as claimed in claim 28, further comprising the film cooling shelf holes extending into the fillet no more than 50 percent of a fillet width of the fillet as measured along the tip shelf.
30. A turbine blade as claimed in claim 29, wherein the majority of first component angles are in a range between 2 degrees and 16 degrees.
31. A turbine blade as claimed in claim 30, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
32. A turbine blade as claimed in claim 25, further comprising a plurality of chordally spaced apart tip cap supply holes extending radially through the tip cap from the cooling circuit into the tip cavity, the tip cap supply holes being located near the tip wall along the suction side of the continuous outer wall.
33. A turbine blade as claimed in claim 32, further comprising the shelf hole centerlines being angled at the second component angles in downstream lateral directions with respect to vertical lines wherein the downstream lateral directions are normal to corresponding ones of the outboard directions and the vertical lines.
34. A turbine blade as claimed in claim 33, wherein the first component angles lie in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
35. A turbine blade as claimed in claim 34, further comprising the shelf hole centerlines being spaced away from a fillet at the junction.
36. A turbine blade as claimed in claim 35, further comprising the film cooling shelf holes extending into the fillet no more than 50 percent of a fillet width of the fillet as measured along the tip shelf.
37. A turbine blade as claimed in claim 36, wherein the majority of first component angles are in a range between 2 degrees and 16 degrees.
38. A turbine blade as claimed in claim 37, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
39. A turbine blade as claimed in claim 24, further comprising the film cooling shelf holes having hole diameters in a range of about 14\u201318 mils.
40. A turbine blade as claimed in claim 39, further comprising the shelf hole centerlines being angled at the second component angles in downstream lateral directions with respect to vertical lines wherein the downstream lateral directions are normal to corresponding ones of the outboard directions and the vertical lines.
41. A turbine blade as claimed in claim 40, wherein the first component angles lie in first planes defined by the vertical lines and transverse lines which are shortest distances between the vertical lines and the recessed tip wall portion.
42. A turbine blade as claimed in claim 41, further comprising the shelf hole centerlines being spaced away from a fillet at the junction.
43. A turbine blade as claimed in claim 41, further comprising the film cooling shelf holes extending into the fillet no more than 50 percent of a fillet width of the fillet as measured along the tip shelf.
44. A turbine blade as claimed in claim 43, wherein the majority of first component angles are in a range between 2 degrees and 16 degrees.
45. A turbine blade as claimed in claim 44, further comprising a first plurality of the film cooling shelf holes having shelf hole centerlines with the positive first component angles in a range between 0.5 degrees and 5 degrees.
46. A turbine blade as claimed in claim 45, further comprising the turbine blade made with a nickel-base superalloy having a free sulfur content of less than about 1 part per million by weight.
47. A turbine blade as claimed in claim 46, further comprising a plurality of chordally spaced apart tip cap supply holes extending radially through the tip cap from the cooling circuit into the tip cavity, the tip cap supply holes being located near the tip wall along the suction side of the continuous outer wall.

1. A semiconductor package, comprising:
a substrate having a die attach surface; and
a die mounted on die attach surface of the substrate via a conductive pillar bump, wherein the die comprises:
a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has a first edge and a second edge substantially vertical to the first edge, wherein the length of the first edge is different from that of the second edge from a plan view.
2. The semiconductor package as claimed in claim 1, wherein the die further comprises:
an interconnection structure between the substrate and the metal pad, wherein the interconnection structure comprises a plurality of metal layers and a plurality of dielectric layers, wherein the interconnection structure comprises a first passivation layer formed by an uppermost dielectric layer of the dielectric layers of the interconnection structure;
a second passivation layer disposed between the substrate and the conductive pillar bump, on the metal pad; and
an underfill between the die and the substrate.
3. The semiconductor package as claimed in claim 1, wherein the metal pad is an octangular shape in the plan view.
4. The semiconductor package as claimed in claim 2, wherein the metal pad is formed by a topmost metal layer of the metal layers of the interconnection structure.
5. The semiconductor package as claimed in claim 1, wherein the conductive pillar bump is composed of a metal stack comprising an under bump metallurgy (UBM) layer, a copper layer, and a solder cap.
6. The semiconductor package as claimed in claim 1, wherein the metal pad has a similar shape to the corresponding conductive pillar bump in the plane view.
7. The semiconductor package as claimed in claim 1, wherein the metal pad has 2-fold rotational symmetry only in the plane view.
8. The semiconductor package as claimed in claim 1, wherein the conductive pillar bump is an octangular shape or oval shape in the plan view.
9. The semiconductor package as claimed in claim 2, wherein the second passivation layer has an opening therein to expose the metal pad.
10. The semiconductor package as claimed in claim 9, wherein the opening is an octangular shape in the plan view and the opening has a third edge and a fourth edge substantially vertical to each other, wherein the length the third edge is different from the fourth edge in the plan view.
11. A semiconductor package, comprising:
a substrate having a die attach surface; and
a die mounted on die attach surface of the substrate via a conductive pillar bump, wherein the die comprises:
a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has a first length along a first direction and a second length, which is different from the first length, along a second direction from a plan view, wherein the angle between the first direction and the second direction is larger than 0 degrees and less than or equal to 90 degrees.
12. The semiconductor package as claimed in claim 11, wherein the die further comprises:
an interconnection structure between the substrate and the metal pad, wherein the interconnection structure comprises a plurality of metal layers and a plurality of dielectric layers, wherein the interconnection structure comprises a first passivation layer formed by an uppermost dielectric layer of the dielectric layers of the interconnection structure;
a second passivation layer disposed between the substrate and the conductive pillar bump, on the metal pad; and
an underfill between the die and the substrate.
13. The semiconductor package as claimed in claim 11, wherein the metal pad is an octangular shape or oval shape in the plan view.
14. The semiconductor package as claimed in claim 12, wherein the metal pad is formed by a topmost metal layer of the metal layers of the interconnection structure.
15. The semiconductor package as claimed in claim 11, wherein the conductive pillar bump is composed of a metal stack comprising an under bump metallurgy (UBM) layer, a copper layer, and a solder cap.
16. The semiconductor package as claimed in claim 11, wherein the metal pad has similar shape to the corresponding conductive pillar bump in the plane view.
17. The semiconductor package as claimed in claim 11, wherein the metal pad has 2-fold rotational symmetry only in the plane view.
18. The semiconductor package as claimed in claim 11, wherein the conductive pillar bump is an octangular shape or oval shape in the plan view.
19. The semiconductor package as claimed in claim 12, wherein the second passivation layer has an opening therein to expose the metal pad.
20. The semiconductor package as claimed in claim 19, wherein the opening is an octangular shape in the plan view and the opening has a third length along the first direction and a fourth length, which is different from the third length, along the second direction in the plan view.
21. The semiconductor package as claimed in claim 11, wherein a ratio of the first length to the second length is between 46:45 and 99:54.
22. A semiconductor package, comprising:
a substrate having a die attach surface; and
a die mounted on die attach surface of the substrate via a conductive pillar bump, wherein the die comprises:
a metal pad electrically coupling to the conductive pillar bump, wherein the metal pad has 2-fold rotational symmetry only from a plan view.
23. The semiconductor package as claimed in claim 22, wherein the metal pad has a first edge and a second edge substantially vertical to the first edge, wherein the length of the first edge is different from that of the second edge from the plan view.
24. The semiconductor package as claimed in claim 22, wherein the metal pad has a first length along a first direction and a second length, which is different from the first length, along a second direction from a plan view, wherein the angle between the first direction and the second direction is larger than 0 degrees and less than or equal to 90 degrees.
25. The semiconductor package as claimed in claim 22, wherein the die further comprises:
an interconnection structure between the substrate and the metal pad, wherein the interconnection structure comprises a plurality of metal layers and a plurality of dielectric layers, wherein the interconnection structure comprises a first passivation layer formed by an uppermost dielectric layer of the dielectric layers of the interconnection structure;
a second passivation layer disposed between the substrate and the conductive pillar bump, on the metal pad; and
an underfill between the die and the substrate.
26. The semiconductor package as claimed in claim 22, wherein the metal pad is an octangular shape or oval shape in the plan view.
27. The semiconductor package as claimed in claim 25, wherein the metal pad is formed by a topmost metal layer of the metal layers of the interconnection structure.
28. The semiconductor package as claimed in claim 22, wherein the conductive pillar bump is composed of a metal stack comprising an under bump metallurgy (UBM) layer, a copper layer, and a solder cap.
29. The semiconductor package as claimed in claim 22, wherein the metal pad has similar shape to the corresponding conductive pillar bump in the plane view.
30. The semiconductor package as claimed in claim 22, wherein the conductive pillar bump is an octangular shape or oval shape in the plan view.
31. The semiconductor package as claimed in claim 25, wherein the second passivation layer has an opening therein to expose the metal pad.
32. The semiconductor package as claimed in claim 31, wherein the opening is an octangular shape in the plan view and the opening has a third length along the first direction and a fourth length, which is different from the third length, along the second direction in the plan view.
33. The semiconductor package as claimed in claim 24, wherein a ratio of the first length to the second length is between 46:45 and 99:54.
34. A semiconductor package, comprising:
a substrate;
a conductive trace disposed on the substrate; and
a conductive pillar bump disposed on the conductive trace, wherein the conductive bump is coupled to a die.
35. The semiconductor package as claimed in claim 34, wherein conductive trace comprising a first portion having a first width and a second portion having a second width, and the conductive pillar bump is disposed on the second portion of the conductive trace.
36. The semiconductor package as claimed in claim 34, wherein the semiconductor package comprises a plurality of conductive pillar bumps disposed on the second portion of the conductive trace.
37. The semiconductor package as claimed in claim 34, wherein the semiconductor package further comprises a metal pad located between the conductive trace and the substrate.
38. The semiconductor package as claimed in claim 37, wherein the semiconductor package further comprises a metal pad located between the conductive pillar bump and the conductive trace.
39. The semiconductor package as claimed in claim 34, wherein the conductive trace comprises a plurality of conductive layers and a metal pad, wherein the metal pad is sandwiched by the plurality of conductive layers
40. A semiconductor package, comprising:
a substrate;
a first conductive trace disposed on the substrate;
a second conductive trace disposed on the substrate;
a conductive pillar bump disposed on the second conductive trace, connecting to a conductive bump or a metal pad of the semiconductor die;
a first conductive structure disposed between the second conductive trace and the conductive pillar bump or between the second conductive trace and the substrate; and
a die disposed over the first conductive trace.
41. The semiconductor package as claimed in claim 40, further comprising:
a solder resistance layer disposed on the substrate, having an extending portion covering a portion of the first conductive trace, wherein a width of the extending portion of the solder resistance layer is larger than that of the portion of the first conductive trace.
42. The semiconductor package as claimed in claim 40, wherein the first conductive structure contacts the second conductive trace, overlapping with the conductive pillar bump.
43. The semiconductor package as claimed in claim 40, further comprising:
a second conductive structure disposed overlapping a portion of the second conductive trace and the semiconductor die or a portion of the second conductive trace and the substrate, wherein the portion of the second conductive trace is away from the conductive pillar bump.
44. The semiconductor package as claimed in claim 43, wherein the third conductive structure or the second conductive structure comprises a single-layer structure or a multi-layer structure.
45. The semiconductor package as claimed in claim 44, wherein the single-layer structure comprises a trace or a pad.
46. The semiconductor package as claimed in claim 44, wherein the multi-layer structure is a stack of traces, pads or combinations thereof.
47. The semiconductor package as claimed in claim 40, wherein the first conductive structure is a polygonal shape, a rounded shape, or a drop shape.
48. The semiconductor package as claimed in claim 40, wherein the second conductive trace comprises signal traces or ground traces.
49. The semiconductor package as claimed in claim 41, wherein the solder resistance layer is disposed away from a portion of the second conductive trace, which overlaps with the conductive pillar bump, by a distance.
50. The semiconductor package as claimed in claim 41, further comprising an underfill material filling a gap between the substrate and the semiconductor die, covering the solder resistance layer.
51. The semiconductor package as claimed in claim 41, wherein the extending portion of the solder resistance layer and the portion of the first conductive trace collectively have a T-shaped cross section.
52. The semiconductor package as claimed in claim 41, wherein the extending portion of the solder resistance layer is below the semiconductor die and within a projection area of the semiconductor die.
53. The semiconductor package as claimed in claim 50, wherein a portion of a bottom surface of the extending portion of the solder resistance layer is exposed from the portion of the first conductive trace.
54. The semiconductor package as claimed in claim 53, wherein the portion of the bottom surface of the extending portion of the solder resistance layer is wrapped by the underfill material.
55. The semiconductor package as claimed in claim 41, wherein the extending portion of the solder resistance layer has a vertical sidewall extruding over to an adjacent vertical sidewall of the portion of the first conductive trace.
56. The semiconductor package as claimed in claim 41, wherein the extending portion of the solder resistance layer extends along the first conductive trace and over a die attach surface of the semiconductor die.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of forming a porous fuel cell sheet, comprising:
flattening a screen to form a sheet that has a plurality of apertures operative to communicate a fluid within a fuel cell.
2. The method of claim 1, wherein the screen is a wire screen.
3. The method of claim 2, wherein the flattening step joins a first wire of the wire screen to a second wire of the wire screen.
4. The method of claim 2, wherein the flattening step cold welds a first wire of the wire screen to a second wire of the wire screen.
5. The method of claim 1, including weaving a plurality of wires to form the screen.
6. The method of claim 5, wherein the plurality of wires comprise metal wires.
7. The method of claim 5, wherein the plurality of wires have a generally circular cross-section.
8. The method of claim 1, wherein the screen includes a plurality of openings before the flattening step, and the flattening step decreases a width of the plurality of openings to form the plurality of apertures.
9. The method of claim 1, wherein the screen has a higher porosity than the sheet.
10. The method of claim 1, wherein the flattening step comprises rolling and compressing the screen.
11. The method of claim 1, wherein the sheet is operative to support a cell.
12. The method of claim 1, wherein the plurality of apertures are operative to communicate the fluid between an interconnector and a cell.
13. The method of claim 1, wherein the flattening step comprises multiple rolling and compression steps.
14. The method of claim 1, wherein the flattening step comprises multiple rolling and compression steps with intermediate annealing steps.
15. A fuel cell stack assembly comprising:
a cell; and
a sheet formed from a flattened screen, the sheet defining a plurality of apertures configured to allow passage of a fuel cell fluid through the sheet.
16. The fuel cell stack assembly of claim 15, wherein the cell comprises a thick film tri-layer cell.
17. The fuel cell stack assembly of claim 15, wherein the flattened screen comprises a plurality of flattened metal wires.
18. The fuel cell stack assembly of claim 15, including an interconnector, and wherein the sheet is configured to communicate a fuel cell fluid between the interconnector and the cell.
19. The fuel cell stack assembly of claim 15, wherein the cell comprises an anode portion adjacent the sheet layer.
20. The fuel cell stack assembly of claim 15, wherein the sheet supports the cell.