All The Claims

1. A method comprising:
performing, by a user device, a set of one or more measurements at an initial set of rates when the user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determining a signal condition of a signal received from a serving cell; and
adjusting the initial set of rates based on the signal condition, wherein the adjusting the initial set of rates based on the signal condition comprises:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
2. The method of claim 1, wherein the performing the set of one or more measurements at the initial set of rates comprises performing at least one of a detection cycle to detect one or more neighboring cells or a measurement cycle to measure parameters of one or more detected neighboring cells.
3. The method of claim 2, wherein the performing the measurement cycle comprises performing:
the intra-frequency measurement for each of the detected neighboring cells at the first initial rate;
the inter-frequency measurement for each of the detected neighboring cells at the second initial rate; and
an inter-radio access technology (rat) measurement or detection of one or more neighboring cells at a third initial rate of the initial set, and wherein the adjusting the initial set of rates comprises adjusting the first, second, and third initial rates.
4. The method of claim 1, wherein the determining the signal condition comprise measuring a cell quality value of the signal received from the serving cell, and wherein the signal condition is equal to the cell quality value.
5. The method of claim 1, wherein the determining the signal condition comprises:
measuring a cell quality value of the signal received from the serving cell; and
subtracting a minimum required quality level and a power compensation value from the cell quality value, wherein the signal condition is equal to the cell quality value after the subtracting.
6. The method of claim 5, further comprising determining the power compensation value, comprising:
determining a maximum transmission power level that can be used by the user device when accessing the serving cell;
determining a maximum radio frequency (RF) output power of the user device; and
subtracting the maximum RF output power from the maximum transmission power level to generate a computed value, wherein the power compensation value is the greater of the computed value and zero.
7. The method of claim 1, wherein the adjusting the initial set of rates based on the signal condition comprises:
setting the first initial rate to a first rate when the signal condition is less than a first threshold level of the plurality of threshold levels;
setting the first initial rate to a second rate when the signal condition is greater than a second threshold level of the plurality of threshold levels; and
setting the first initial rate to a third rate when the signal condition is greater than the first threshold level and less than second threshold level, wherein the third rate is less than the second rate and the first rate is less than the third rate;
incrementally increasing the first initial rate from the third rate to the first rate as the signal condition decreases towards the first threshold level; and
incrementally reducing the first initial rate from the third rate to the second rate as the signal condition increases away from the first threshold level.
8. The method of claim 7, wherein the third rate is every paging cycle when the user device is in the DRX mode, and wherein the second rate is less than every paging cycle.
9. The method of claim 7, wherein the third rate is defined by a standard specification, and wherein the second rate is a variable rate that is less than the second initial rate.
10. The method of claim 9, wherein the standard specification is the 3rd Generation Partnership Projection (3GPP) specification.
11. The method of claim 1, wherein the user device is an electronic book reader.
12. A user device, comprising:
a memory; and
a processing device, coupled to the memory, wherein the processing device is configured to:
perform a set of one or more measurements at an initial set of rates when the user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determine a signal condition of a signal received from a serving cell; and
adjust the initial set of rates based on the signal condition by:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
13. The user device of claim 12, wherein the selection of one of the first plurality of rates that is less than the first initial rate reduces a current drain by the user device when the user device is in the DRX mode.
14. The user device of claim 12, further comprising a communication circuit, coupled to the processing device, wherein the communication circuit comprising at least one of a transceiver or a transmitter and a receiver.
15. The user device of claim 12, wherein the processing device is configured to execute a measurement module to measure a cell quality value of the signal received from the serving cell to determine the signal condition, and wherein the signal condition is equal to the cell quality value.
16. The user device of claim 15, wherein the processing device is further configured to subtract a minimum required quality level and a power compensation value from the cell quality value to determine the signal condition.
17. The user device of claim 16, wherein the processing device is configured to determine a maximum transmission power level that can be used by the user device when accessing the serving cell, and a maximum radio frequency (RF) output power of the user device, wherein the processing device is further configured to subtract the maximum RF output from the maximum transmission power level to generate a computed value, and wherein the power compensation value is the greater of the computed value and zero.
18. The user device of claim 12, wherein the initial set of rates is defined in the 3rd Generation Partnership Projection (3GPP) specification.
19. A non-transitory computer readable storage medium including instructions that, when executed by a processing device, cause the processing device to perform operations comprising:
performing, by the processing device, a set of one or more measurements at an initial set of rates when a user device is in a discontinuous reception (DRX) mode, wherein the set of one or more measurements comprises an intra-frequency measurement for each of detected neighboring cells and an inter-frequency measurement for each of the detected neighboring cells;
determining a signal condition of a signal received from a serving cell; and
adjusting the initial set of rates based on the signal condition, wherein the adjusting the initial set of rates based on the signal condition comprises:
comparing the signal condition against a first plurality of threshold levels for the intra-frequency measurement and selecting a corresponding rate from a first plurality of rates for the intra-frequency measurement based on the comparing, wherein the first plurality of threshold levels comprise at least three threshold levels that are defined from zero to a first initial threshold, Sintrasearch, corresponding to a first initial rate of the initial set for the intra-frequency measurement; and
comparing the signal condition against a second plurality of threshold levels for the inter-frequency measurement and selecting a corresponding rate for the inter-frequency measurement based on the comparing against the second plurality of threshold levels, wherein the second plurality of threshold levels comprise at least three threshold levels that are defined from zero to a second initial threshold, Sintersearch, corresponding to a second initial rate of the initial set for the inter-frequency measurement.
20. The computer readable storage medium of claim 19, wherein the performing the set of one or more measurements at the initial set of rates comprises performing at least one of a detection cycle to detect one or more neighboring cells or a measurement cycle to measure parameters of one or more detected neighboring cells.
21. The computer readable storage medium of claim 20, wherein the performing the measurement cycle comprises performing:
the intra-frequency measurement for each of the detected neighboring cells at the first initial rate;
the inter-frequency measurement for each of the detected neighboring cells at the second initial rate; and
an inter-radio access technology (rat) measurement or detection of one or more neighboring cells at a third initial rate of the initial set, and wherein the adjusting the initial set of rates comprises adjusting the first, second, and third initial rates.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a transistor, a first conductive layer, a layer, and a second conductive layer, the transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the transistor,
wherein each of the layer and the second conductive layer is located over the transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the layer is interposed between the first conductive layer and the second conductive layer,
wherein the layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the layer.
2. The semiconductor device according to claim 1, wherein the layer includes an organic compound.
3. The semiconductor device according to claim 1, wherein the layer has conductivity.
4. The semiconductor device according to claim 1, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
5. The semiconductor device according to claim 4, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
6. The semiconductor device according to claim 4, wherein the second driver circuit comprises a row decoder.
7. The semiconductor device according to claim 1, wherein the transistor is any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
8. The semiconductor device according to claim 1, wherein the semiconductor film comprises In\u2014Ga\u2014Zn\u2014O.
9. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a first transistor, a second transistor, a first conductive layer, a layer and a second conductive layer, at least one of the first transistor and the second transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the first transistor,
wherein each of the layer and the second conductive layer is located over the first transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the layer is interposed between the first conductive layer and the second conductive layer,
wherein the layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the layer.
10. The semiconductor device according to claim 9, wherein the layer includes an organic compound.
11. The semiconductor device according to claim 9, wherein the layer has conductivity.
12. The semiconductor device according to claim 9, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
13. The semiconductor device according to claim 12, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
14. The semiconductor device according to claim 12, wherein the second driver circuit comprises a row decoder.
15. The semiconductor device according to claim 9, wherein the first transistor and the second transistor are any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
16. The semiconductor device according to claim 9, wherein both of the first transistor and the second transistor have the semiconductor film.
17. The semiconductor device according to claim 9, wherein the semiconductor film comprises In’Ga\u2014Zn\u2014O.
18. A semiconductor device comprising:
a memory cell including a first wiring, a second wiring, a transistor, a first conductive layer, a first layer, a second layer, and a second conductive layer, the transistor having a semiconductor film including a channel formation region,
wherein the semiconductor film includes oxygen and indium,
wherein the first conductive layer is electrically connected to the transistor,
wherein each of the first layer, the second layer and the second conductive layer is located over the transistor,
wherein the first conductive layer is overlapped with the second conductive layer,
wherein the first layer and the second layer are interposed between the first conductive layer and the second conductive layer,
wherein the first layer comprises a metal oxide, and
wherein a top surface of the first conductive layer has a curved surface at least partly in a region overlapped with the first layer.
19. The semiconductor device according to claim 18, wherein the first layer includes a first organic compound, the second layer includes a second organic compound.
20. The semiconductor device according to claim 18, wherein the first layer and the second layer have conductivity.
21. The semiconductor device according to claim 18, further comprising:
a first driver circuit; and
a second driver circuit,
wherein the first wiring is electrically connected to the first driver circuit, and
wherein the second wiring is electrically connected to the second driver circuit.
22. The semiconductor device according to claim 21, wherein the first driver circuit comprises at least one of a column decoder, a read circuit, and a level shifter.
23. The semiconductor device according to claim 21, wherein the second driver circuit comprises a row decoder.
24. The semiconductor device according to claim 18, wherein the transistor is any one of a top gate transistor, a bottom gate transistor, and a forward stagger transistor.
25. The semiconductor device according to claim 18, wherein the semiconductor film comprises In\u2014Ga\u2014Zn\u2014O.

1. A method comprising the steps of:
providing a vessel having a substantially chemically inert stationary phase established therein and having at least one vessel inlet;
inputting a precipitant solvent into said vessel through at least one vessel inlet;
inputting a solution into said vessel through at least one vessel inlet;
intentionally precipitating asphaltenes within said vessel and in the presence of said substantially chemically inert stationary phase, wherein said substantially chemically inert stationary phase is substantially chemically inert relative to said asphaltenes;
generating a remnant liquid upon performing said step of intentionally precipitating said asphaltenes;
inputting a material dissolving solvent into said vessel through at least one vessel inlet; and
dissolving at least a portion of said asphaltenes with said material dissolving solvent to generate a dissolved material solution.
2. A method as described in claim 1 wherein said step of inputting a solution into said vessel through at least one vessel inlet comprises the step of inputting a sample into said vessel.
3. A method as described in claim 2 wherein said step of inputting a sample into said vessel through at least one vessel inlet comprises the step of inputting oil into said vessel.
4. A method as described in claim 2 wherein said step of inputting a sample into said vessel through at least one vessel inlet comprises the step of inputting a wax component of oil into said vessel.
5. A method as described in claim 2 wherein said step of inputting a sample into said vessel through at least one vessel inlet comprises the step of inputting an asphaltene into said vessel.
6. A method as described in claim 2 wherein said step of inputting a solution into said vessel through at least one vessel inlet further comprises the step of inputting a sample solvent into said vessel.
7. A method as described in claim 2 wherein said substantially chemically inert stationary phase is also substantially chemically inert relative to said sample.
8. A method as described in claim 1 wherein said step of inputting a solution into said vessel through at least one vessel inlet comprises the step of inputting oil into said vessel.
9. A method as described in claim 1 wherein said step of inputting a precipitant solvent into said vessel through at least one vessel inlet comprises the step of inputting into said vessel a precipitant solvent selected from the group consisting of low polarity solvents, low polarity solvent mixtures, aliphatic solvents, heptane, pentane and isooctane.
10. A method as described in claim 1 wherein said step of generating a remnant liquid comprises the step of generating a remnant solution.
11. A method as described in claim 2 further comprising the step of determining at least one characteristic of said sample.
12. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of using a technique selected from the group consisting of evaporative light scattering, mass spectrometry, optical absorbance, x-ray, conductivity, oxidationreduction, refractive index, polarimetry, atomic spectroscopy, and fluorescence.
13. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of analyzing said remnant liquid.
14. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of determining a weight percentage of asphaltenes.
15. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of analyzing said dissolved material solution.
16. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of determining a mass fraction of heptane asphaltenes soluble in cyclohexane.
17. A method as described in claim 11 wherein said step of determining at least one characteristic of said sample comprises the step of determining at least two characteristics of said sample.
18. A method as described in claim 17 wherein said step of determining at least two characteristics of said sample comprises the step of determining a cyclohexane soluble peak value and a methylene chloride soluble peak value.
19. A method as described in claim 1 wherein said step of inputting a material dissolving solvent comprises the step of inputting a material dissolving solvent selected from the group consisting of solvents having a higher polarity than that of said precipitant solvent, solvent mixtures having a higher polarity than that of said precipitant solvent, naphthenic oils, aromatic oils, ketones, halogenated solvents, cyclohexane, toluene, cyclohexanone, and methylene chloride.
20. A method as described in claim 1 further comprising the step of separating said remnant liquid from said asphaltenes.
21. A method as described in claim 1 further comprising the step of removing said remnant liquid from said vessel.
22. A method as described in claim 20 further comprising the step of replacing said remnant liquid with said material dissolving solvent.
23. A method as described in claim 1 further comprising the step of eluting said dissolved material solution from said vessel.
24. A method as described in claim 1 wherein said step of inputting a material dissolving solvent into said vessel comprises the step of inputting cyclohexane, or a different solvent or solvent mixture with substantially the same polarity as cyclohexane.
25. A method as described in claim 1 wherein said step of dissolving at least a portion of said asphaltenes with said material dissolving solvent comprises the step of dissolving only a first portion of said asphaltenes with said material dissolving solvent.
26. A method as described in claim 25 further comprising the step of inputting a second material dissolving solvent into said vessel through at least one vessel inlet to dissolve at least a second portion of said asphaltenes.
27. A method as described in claim 26 wherein said step of inputting a second material dissolving solvent into said vessel comprises the step of inputting a stronger material dissolving solvent.
28. A method as described in claim 27 wherein said step of inputting a stronger material dissolving solvent into said vessel comprises the step of inputting into said vessel solvent that gradually increases in strength.
29. A method as described in claim 28 wherein said step of inputting into said vessel solvent that gradually increases in strength is performed during continuous solvent flow.
30. A method as described in claim 27 wherein said strengths of said material dissolving solvents do not change in a step gradient fashion.
31. A method as described in claim 27 wherein said strengths of said material dissolving solvents change in a step gradient fashion.
32. A method as described in claim 25 further comprising the step of inputting increasingly stronger material dissolving solvent into said vessel to dissolve at least a second portion of said asphaltenes and generate a second dissolved material solution.
33. A method as described in claim 32 wherein said step of inputting increasingly stronger material dissolving solvent comprises the step of inputting material dissolving solvent that gradually increases in strength.
34. A method as described in claim 33 wherein said step of step of inputting material dissolving solvent that gradually increases in strength is performed during continuous solvent flow.
35. A method as described in claim 32 where input solvent strengths do not change in a step gradient fashion.
36. A method as described in claim 26 further comprising the step of replacing said dissolved material solution with said second material dissolving solvent.
37. A method as described in claim 26 wherein said step of inputting a second material dissolving solvent into said vessel comprises the step of inputting toluene, or a different solvent or solvent mixture with substantially the same polarity as toluene.
38. A method as described in claim 32 further comprising the steps of analyzing said second dissolved material solution.
39. A method as described in claim 32 wherein said step of inputting increasingly stronger material dissolving solvent into said vessel to dissolve at least a second portion of said asphaltenes comprises the step of inputting increasingly stronger material dissolving solvent into said vessel to dissolve said second and at least a third portion of said asphaltenes.
40. A method as described in claim 39 further comprising the step of generating a third dissolved material solution.
41. A method as described in claim 39 wherein said step of inputting increasingly stronger material dissolving solvent into said vessel comprises the step of inputting methylene chloride or a solvent or solvent mixture with substantially the same polarity as methylene chloride.
42. A method as described in claim 40 further comprising the step of analyzing said third dissolved material solution.
43. A method as described in claim 1 further comprising the step of fractionating said solution into at least two parts.
44. A method as described in claim 1 wherein each of said steps is started in the order in which it appears.
45. A method as described in claim 1 wherein said step of providing a vessel having a substantially chemically inert stationary phase established therein comprises the step of providing a vessel having established therein a stationary phase selected from the group of: oligomers of PTFE, polymers of PTFE, polyphenylene sulfide, fluorinated polymers, silicon polymer and PEEK.
46. A method as described in claim 1 wherein said step of providing a vessel having a substantially chemically inert stationary phase established therein comprises the step of providing a column having a substantially chemically inert stationary phase established therein.
47. A method as described in claim 46 wherein said step of providing a column comprises the step of providing a column that is part of a chromatograph.
48. A method as described in claim 1 wherein said step of providing a vessel having a substantially chemically inert stationary phase established therein comprises the step of providing a batch type vessel having a substantially chemically inert stationary phase established therein.
49. A method as described in claim 1 wherein said step of intentionally precipitating asphaltenes within said vessel comprises the step of intentionally precipitating solid material.
50. A method as described in claim 1 wherein said step of intentionally precipitating a asphaltenes within said vessel comprises the step of intentionally precipitating gel or viscous liquid.
51. A method as described in claim 1 wherein said method is accomplished, at least in part, with a flow system.
52. A method as described in claim 51 wherein said flow system is a continuous flow system.
53. A method as described in claim 1 wherein said step of inputting a precipitant solvent into said vessel through at least one vessel inlet comprises the step of inputting a liquid into said vessel through at least one vessel inlet.
54. A method as described in claim 1 wherein said step of inputting a precipitant solvent into said vessel through at least one vessel inlet comprises the step of inputting gel or viscous liquid.
55. A method as described in claim 1 wherein said method is a method selected from the group consisting of coking onset estimation method, oil processing method; oil fractionating method, oil production method, pipeline fouling related method, hydrotreating, distillation method, vacuum distillation method, atmospheric distillation method, visbreaking method, blending method, asphalt formation method, asphalt extraction method, and asphaltene content of oil measurement method.
56. A method as described in claim 1 wherein said method is an automated method.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. An isolated nucleic acid molecule comprising a STP2 sequence polymorphism, as part of other than a naturally occurring chromosome.
2. A nucleic acid probe for detection of STP2 locus polymorphisms, comprising a polymorphic sequence listed in Table 4.
3. A nucleic acid probe according to claim 2, wherein said probe is conjugated to a detectable marker.
4. An array of oligonucleotides comprising:
two or more probes for detection of STP2 locus polymorphisms, said probes comprising at least one form of a polymorphic sequence listed in Table 4.
5. A method for detecting in an individual a polymorphism in STP2 metabolism of a substrate, the method comprising:
analyzing the genome of said individual for the presence of at least one STP2 polymorphism listed in Table 4; wherein the presence of said predisposing polymorphism is indicative of an alteration in STP2 expression or activity.
6. A method according to claim 5, wherein said analyzing step comprises detection of specific binding between the genomic DNA of said individual with an array of oligonucleotides comprising:
two or more probes for detection of STP2 locus polymorphisms, said probes comprising at least one form of a polymorphic sequence listed in Table 4.
7. A method according to claim 5, wherein said alteration in STP2 expression is tissue specific.
8. A method according to claim 5, wherein said alteration in STP2 expression is in response to a STP2 modifier.
9. A method according to claim 8, wherein said modifier induces STP2 expression.
10. A method according to claim 8, wherein said modifier inhibits STP2 expression.