All The Claims

1. A voltage controlled oscillator, comprising:
a substrate comprising quartz;
a resonance part including a variable capacitance element and an inductance element, the variable capacitance element having a capacitance which changes according to control voltage for frequency control inputted from an external part, in which a series resonance frequency is adjusted according to the capacitance;
a transistor for amplification having a base connected to the resonance part; and
a first feedback capacitance element and a second feedback capacitance element, which are connected between a base of the transistor and ground and connected in series with each other, the emitter of the transistor being connected therebetween;
wherein the first feedback capacitance element is connected between a base terminal on the substrate on which a pin that extends from the base of the transmitter is mounted, and an emitter terminal on the substrate, on which a pin that extends from the emitter of the transmitter is mounted, the first feedback capacitance element formed by a comb electrode comprising a first and a second common electrode that are formed parallel to each other so as to intersect a line that joins said first and second common electrodes, a first group of electrode fingers extending from the first common electrode in a comb shape, and a second group of electrode fingers extending from the second common electrode in another comb shape, the comb shape of the first group being interdigitated with the another comb shape of the second group;
wherein the distance between the base terminal and the emitter terminal is no greater than 120 \u03bcm; and
wherein the series resonance frequency is no less than 5 GHz.
2. The voltage controlled oscillator according to claim 1,
wherein the second feedback capacitance element is is connected between the emitter terminal and a ground terminal on the substrate, the second feedback capacitance element formed by a comb electrode comprising a third and a fourth common electrode that are formed parallel to each other so as to intersect a line that joins said third and fourth common electrodes, a third group of electrode fingers extending from the third common electrode in a comb shape, and a fourth group of electrode fingers extending from the fourth common electrode in another comb shape, the comb shape of the third group being interdigitated with the another comb shape of the fourth group; and
wherein the distance between the emitter terminal and the ground terminal is no greater than 120 \u03bcm.
3. The voltage controlled oscillator according to claim 1, wherein the resonance part includes a capacitance element other than the variable capacitance element, and this capacitance element comprises: a fifth common electrode and a sixth common electrode formed on the substrate in parallel to each other; a fifth group of electrode fingers extending from the fifth common electrode in a comb shape; and a sixth group of electrode fingers extending from the sixth common electrode in another comb shape; and wherein the comb shape of the fifth group is interdigitated with the another comb shape of the sixth group.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side opposite to said third side;
a base; and
a forced vibration generator comprising a piezoelectric bimorph attached to said base;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached directly to said base, whereby said mirror structure is suspended by said first torsion hinge.
2. The apparatus according to claim 1, wherein at least said first torsion hinge comprises polyimide.
3. The apparatus according to claim 1, wherein said forced vibration generator operates at approximately the same frequency as a resonant frequency of a structure comprising at least said mirror structure, said first torsion hinge and said base.
4. The apparatus according to claim 1, wherein said mirror structure further comprises a support comprising said first side and said second side, said mirror being attached to said support.
5. The apparatus according to claim 4, wherein said support and said base are integrally formed and coupled together by said first torsion hinge.
6. The apparatus according to claim 1, wherein said mirror comprises said first side and said second side.
7. An optical coherence tomography system comprising said scanning apparatus as claimed in claim 1.
8. The optical coherence tomography system according to claim 7 further comprising a lateral scanning arm, wherein said lateral scanning arm comprises said scanning apparatus.
9. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side
a first torsion hinge comprising a third side and a fourth side opposite to said third side;
a base;
a forced vibration generator comprising a piezoelectric bimorph attached to said base; and
a second torsion hinge comprising a fifth side and a sixth side opposite to said fifth side;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended. by said first torsion hinge; and
wherein said fifth side of said second torsion hinge is attached to said second side and said sixth side of side second torsion hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge and said second torsion hinge.
10. The apparatus according to claim 3, wherein:
said first torsion hinge is attached to said first side at approximately a center portion of said first side; and
said second torsion hinge is attached to said second side at approximately a center portion of said second side.
11. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side Opposite to said third side:
a base; and
a forced vibration generator comprising a piezoelectric bimorph attached to said base;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge: and
wherein the mirror structure pivots about the first torsion hinge upon application of a forced vibration to at least said base.
12. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side opposite to said third side; and
a base;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge, and
a structure comprising at least said mirror structure, said first torsion hinge and said base has a resonant frequency on the order of 30 Hz to 40 Hz.
13. The apparatus according to claim 12, further comprising a piezoelectric bimorph attached to said base for generating a forced vibration, wherein said bimorph is driven below a resonant frequency thereof.
14. A scanning apparatus comprising:
a mirror structure comprising a first reflecting surface, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side opposite to said third side; and
a base;
a focusing element;
a beam guide; and
a second reflecting surface;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge, and
said second reflecting surface is arrange with respect to said focusing element and said mirror structure to direct a beam from said beam guide onto the first reflecting surface of said mirror structure.
15. The apparatus according to claim 14, wherein said focusing element comprises a Grin lens.
16. The apparatus according to claim 14, wherein said beam guide is an optical fiber.
17. The apparatus according to claim 14, further comprising a prism, wherein said prism comprises said second reflecting surface.
18. The apparatus according to claim 17, wherein said prism is a right angle microprism.
19. The apparatus according to claim 14, wherein said beam comprises an infra-red beam.
20. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side opposite to said third side;
A base; and
a forced vibration generator comprising a piezoelectric bimorph attached to said base;
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge; and
wherein said first torsion hinge and said base are integrally formed.
21. A scanning apparatus comprising:
a mirror structure comprising a mirror, a first side, and a second side opposite to said first side;
a first torsion hinge comprising a third side and a fourth side opposite to said third side;
a base;
a forced vibration generator comprising a piezoelectric bimorph attached to said base; and
a second torsion hinge,
wherein said third side of said first hinge is attached to said first side and said fourth side of said first hinge is attached to said base, whereby said mirror structure is suspended by said first torsion hinge;
wherein said mirror structure further comprises a support comprising said first side and said second side, said mirror being attached to said support;
wherein said support and said base are integrally formed and coupled together by said first torsion hinge; and
wherein, said support is coupled to said base by said first and second torsion hinges, said first and second torsion hinges being formed on opposite sides, respectively, of said support, whereby said support is capable of oscillating about an axis extending through said first and said second torsion hinges, said axis being parallel with a plane of said support.

1. A polishing pad useful for polishing a surface of a semiconductor substrate, the polishing pad comprising:
(a) a polishing layer that includes:
(i) a central region;
(ii) an outer peripheral edge spaced from the central region; and
(iii) a generally annular polishing region configured to polish the surface of a workpiece and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;

(b) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(c) a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of:
(i) the outer peripheral edge; and
(ii) radially outward from the outer periphery of the polishing region.
2. The polishing pad according to claim 1, wherein the second end of each groove in the first plurality of grooves is located proximate the outer periphery of the polishing region and the first end of each groove in the second plurality of grooves is located proximate the inner periphery of the polishing region.
3. The polishing pad according to claim 1, wherein ones of the first plurality of grooves are located alternatingly with ones of the second plurality of grooves.
4. The polishing pad according to claim 1, further comprising a third plurality of grooves in the polishing layer, each groove of the third plurality of grooves located entirely within the polishing region.
5. The polishing pad according to claim 1, further including a plurality of sets of branching grooves in the polishing layer, each groove in each set located entirely within the polishing region and having an end in fluid communication with a corresponding respective groove of the first plurality of grooves.
6. A method of chemical mechanical polishing a semiconductor substrate, comprising the steps of:
(a) providing a polishing pad comprising:
(i) a polishing layer that includes:
(A) a central region;
(B) an outer peripheral edge spaced from the central region; and
(C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;

(ii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(iii)a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region; and

(b) providing a polishing solution to the central portion of the polishing pad.
7. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to ones of the second plurality of grooves.
8. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to corresponding immediately adjacent ones of the second plurality of grooves.
9. The method according to claim 6, further including the step of rotating the polishing pad while the semiconductor substrate is in contact with the polishing layer such that at least a portion of the polishing solution moves from ones of the first plurality of grooves to ones of a third plurality of grooves and from the third plurality of grooves to ones of the second plurality of grooves.
10. A polishing system for use with a polishing solution to polish a surface of a semiconductor substrate, comprising:
(a) a polishing pad comprising:
(i) a polishing layer that includes:
(A) a central region;
(B) an outer peripheral edge spaced from the central region; and
(C) a generally annular polishing region configured to polish the surface of the semiconductor substrate and having an inner periphery adjacent the central region and an outer periphery spaced from the inner periphery;

(ii) a first plurality of grooves in the polishing layer, each groove of the first plurality of grooves having a first end located within the central portion and a second end located within the polishing region; and
(iii)a second plurality of grooves in the polishing layer, each groove of the second plurality of grooves spaced from ones of the first plurality of grooves and having a first end located within the polishing region and a second end located in at least one of the outer peripheral edge and located radially outward from the outer periphery of the polishing region; and

(b) a polishing solution delivery system for delivering the polishing solution to the central portion of the polishing pad.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A pharmaceutical composition comprising:
(a) about 3 to 20% by weight of a dipeptidyl peptidase-4 (DPP-4) inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 25 to 94% by weight of metformin hydrochloride;
(c) about 0.1 to 10% by weight of a lubricant; and
(d) about 0 to 35% by weight of a binding agent.
2. The pharmaceutical composition of claim 1 additionally comprising one or more excipients selected from the group consisting of (a) diluent; (b) a disintegrant; (c) a surfactant; (d) a wetting agent; and (e) an anti-oxidant.
3. The pharmaceutical composition of claim 1 comprising:
(a) about 5 to 18% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 65 to 77% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 4 to 9% by weight of a binding agent.
4. The pharmaceutical composition of claim 3 additionally comprising about 0.5 to 1% by weight of a surfactant andor about 5 to 15% by weight of a diluent.
5. The pharmaceutical composition of claim 3 wherein said lubricant is magnesium stearate or sodium stearyl fumarate, and the binding agent is polyvinylpyrrolidone.
6. The pharmaceutical composition of claim 3 comprising:
(a) about 9% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 73% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 7% by weight of a binding agent.
7. The pharmaceutical composition of claim 6 additionally comprising about 0.5% by weight of a surfactant andor about 10% by weight of a diluent.
8. The pharmaceutical composition of claim 3 comprising
(a) about 5% by weight of a DPP-4 inhibitor or a pharmaceutically acceptable salt thereof;
(b) about 77% by weight of metformin hydrochloride;
(c) about 1 to 2% by weight of a lubricant; and
(d) about 7% by weight of a binding agent.
9. The pharmaceutical composition of claim 8 additionally comprising about 0.5% by weight of a surfactant andor about 10% by weight of a diluent.
10. The pharmaceutical composition of claim 3 wherein said DPP-4 inhibitor is selected from the group consisting of sitagliptin, vildagliptin, and saxagliptin, and pharmaceutically acceptable salts of each thereof.
11. The pharmaceutical composition of claim 10 wherein said DPP-4 inhibitor is sitagliptin or the dihydrogenphosphate salt thereof.
12. A pharmaceutical composition comprising:
(a) a DPP-4 inhibitor present in a unit dosage strength of 25 to 200 milligrams;
(b) metformin hydrochloride present in a unit dosage strength of 250, 500, 625, 750, 850, or 1000 milligrams;
(c) about 1 to 2% by weight of a lubricant;
(d) about 7% by weight of a binding agent; and optionally
(e) about 10% by weight of a diluent; and optionally
(f) about 0.5% by weight of a surfactant.
13. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is sitagliptin, said lubricant is sodium stearyl fumarate, said binding agent is polyvinylpyrrolidone, said optional diluent is microcrystalline cellulose, and said optional surfactant is sodium lauryl sulfate.
14. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is present in a unit dosage strength of 25, 50, 75, 100, 150, or 200 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500, 850, or 1000 milligrams.
15. The pharmaceutical composition of claim 14 wherein said DPP-4 inhibitor is present in a unit dosage strength of 50 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500, 850, or 1000 milligrams.
16. The pharmaceutical composition of claim 15 wherein said DPP-4 inhibitor is sitagliptin.
17. The pharmaceutical composition of claim 16 wherein said sitagliptin is present in a unit dosage strength of 50 milligrams, and said metformin hydrochloride is present in a unit dosage strength of 500 or 1000 milligrams.
18. The pharmaceutical composition of claim 1 or 14 wherein said composition is in the dosage form of a tablet.
19. A method of treating Type 2 diabetes in a human in need thereof comprising orally administering to said human a pharmaceutical composition of claim 1 or 14.
20. The pharmaceutical composition of claim 1 further comprising one or more agents selected from the group consisting of flavoring agents, colorants, and sweeteners.
21. The pharmaceutical composition of claim 1 or 3 prepared by wet granulation methods.
22. The pharmaceutical composition of claim 12 wherein said DPP-4 inhibitor is vildagliptin or saxagliptin or a pharmaceutically acceptable salt of each thereof.