1. A method for forming a metal gate structure on a substrate having a dielectric layer formed on the substrate, comprising:
depositing a metal layer while providing a process gas comprising oxygen to form an oxygen doped work function layer atop the dielectric layer; and
depositing a metal gate layer atop dielectric layer.
2. The method of claim 1, wherein the substrate comprises an oxide layer formed on the substrate between the substrate and the dielectric layer.
3. The method of claim 1, wherein the dielectric layer comprises one of hafnium oxide (HfO2), hafnium silicon oxide (HfSiO2), or hafnium silicon oxynitride (HfSiON).
4. The method of claim 1, wherein the dielectric layer is about 20 to about 25 angstroms thick.
5. The method of claim 1, further comprising:
depositing a barrier layer atop the dielectric layer before forming the oxygen doped work function layer.
6. The method of claim 5, wherein depositing the barrier layer comprises:
depositing a first layer comprising titanium nitride (TiN) to a thickness of about 10 to about 20 angstroms; and
depositing a second layer comprising tantalum nitride (TaN) to a thickness of about 10 to about 20 angstroms.
7. The method of claim 1, wherein the oxygen doped work function layer comprises a nitride of a transition metal or a transition metal alloy.
8. The method of claim 1, wherein the oxygen doped work function layer is formed to a thickness of about 20 to about 60.
9. The method of claim 1, wherein forming the oxygen doped work function layer comprises:
providing the substrate to a process chamber having a target comprising a source material to be deposited atop the substrate;
forming a plasma from a process gas provided to the process chamber; and
sputtering the source material from the target while providing an oxygen containing gas to the process chamber to form the oxygen doped work function layer.
10. The method of claim 9, wherein the source material comprises a transition metal.
11. The method of claim 9, wherein the process gas comprises a nitrogen containing gas.
12. The method of claim 11, wherein the nitrogen containing gas is provided at a flow rate of about 30 to about 200 sccm.
13. The method of claim 11, wherein the process gas further comprises argon (Ar).
14. The method of claim 13, wherein the argon is provided at a flow rate of up to about 100 sccm.
15. The method of claim 14, wherein the nitrogen containing gas and argon (Ar) are provided to the process chamber via separate gas lines
16. The method of claim 9, wherein the oxygen containing gas is provided at a flow rate of about 0.5 to about 3 sccm.
17. The method of claim 16, wherein the process gas and the oxygen containing gas are provided to the process chamber via separate gas lines.
18. The method of claim 1, further comprising,
depositing a wetting layer atop the work function layer before depositing the metal gate layer
19. The method of claim 18, wherein the wetting layer comprises aluminum (Al) or a transition metal.
20. The method of claim 1, wherein the metal gate layer comprises aluminum (Al), a transition metal, or a silicide of a transition metal.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of manufacturing a liquid discharge head substrate including a substrate, which has at one surface thereof an energy generating element that generates energy used for discharging liquid, and a liquid supply port, which extends through the one surface of the substrate and through another surface of the substrate, the another surface being provided at a back side of the one surface, the method comprising the steps of:
providing a recessed portion in the another surface of the substrate by discharging liquid in a linear form to the another surface of the substrate and by processing the another surface using laser light that has passed along and in the linear liquid; and
forming the liquid supply port by etching the substrate from the another surface provided with the recessed portion.
2. The method according to claim 1, wherein the substrate provided with a metallic layer having an opening at the back surface thereof is formed, and the back surface is processed using the laser light through an interior of the opening.
3. The method according to claim 1, wherein the etching is wet etching.
4. The method according to claim 1, wherein the laser light is pulse laser light, and the back surface is irradiated with the laser light a plurality of times.
5. The method according to claim 1, wherein a crystal plane orientation of the one surface is (100).
6. The method according to claim 2, wherein the metallic layer includes gold, and the laser light is light emitted from a YAG laser.
7. A method of manufacturing a liquid discharge head substrate including a substrate, which has at one surface thereof an energy generating element that generates energy used for discharging liquid, and a liquid supply port, which extends through the one surface of the substrate and through another surface of the substrate, the another surface being provided at a back side of the one surface, the method comprising the steps of:
providing the substrate; and
providing a recessed portion, which becomes the liquid supply port, by processing the substrate as a result of discharging liquid in a linear form to the another surface of the substrate and as a result of irradiating the another surface a plurality of times with pulse laser light that has passed along and in the linear liquid, so that the recessed portion has a shape in which a sectional area parallel to the one surface increases from the another surface towards the one surface and the sectional area is reduced from a position where the sectional area is a maximum towards the one surface.
8. The method according to claim 7, wherein a plurality of the recessed portions are provided at the back surface, and the substrate is etched from the back surface provided with the recessed portions, to remove portions of the substrate that form walls of the recessed portions, the walls being positioned between the recessed portions.
9. The method according to claim 7, wherein the substrate provided with a metallic layer having an opening at the back surface thereof is formed, and the back surface is processed using the laser light through an interior of the opening.
10. The method according to claim 7, wherein the metallic layer includes gold, and the laser light is light emitted from a YAG laser.
11. A method of processing a substrate comprising the steps of:
providing the substrate; and
providing a recessed portion by processing the substrate as a result of discharging liquid in a linear form to one surface of the substrate and as a result of irradiating the one surface a plurality of times with pulse laser light that has passed along and in the linear liquid, so that the recessed portion has a shape in which a sectional area parallel to the one surface increases from the one surface towards another surface, which is at a back side of the one surface, and the sectional area is reduced from a position where the sectional area is a maximum towards the another surface.