All The Claims

1. A display device comprising:
a first subpixel electrode;
a first roof layer;
a first liquid crystal layer, which is disposed between the first subpixel electrode and the first roof layer;
a first support member, which overlaps a first end portion of the first roof layer in a first direction and overlaps the first liquid crystal layer in a second direction;
a second subpixel electrode, which immediately neighbors the first subpixel electrode without any subpixel electrode being disposed between the first subpixel electrode and the second subpixel electrode;
a second roof layer;
a second liquid crystal layer, which is disposed between the second subpixel electrode and the second roof layer; and
a second support member, which overlaps a first end portion of the second roof layer in the first direction and overlaps the second liquid crystal layer in the second direction,
wherein the first end portion of the first roof layer and the first end portion of the second roof layer are disposed between a second end portion of the first roof layer and a second end portion of the second roof layer.
2. The display device of claim 1,
wherein the second end portion of the first roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member, and
wherein the second end portion of the second roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
3. The display device of claim 1, further comprising:
a third subpixel electrode, which immediately neighbors the second subpixel electrode without any subpixel electrode being disposed between the second subpixel electrode and the third subpixel electrode,
wherein the second subpixel electrode is disposed between the first subpixel electrode and the third subpixel electrode,
wherein the second roof layer overlaps both the second subpixel electrode and the third subpixel electrode,
wherein a center portion of the second roof layer is disposed between the first end portion of the second roof layer and the second end portion of the second roof layer, and
wherein the center portion of the second roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
4. The display device of claim 3, further comprising:
a fourth subpixel electrode, which immediately neighbors the third subpixel electrode without any subpixel electrode being disposed between the third subpixel electrode and the fourth subpixel electrode; and
a third roof layer, which overlaps the fourth subpixel electrode in the first direction,
wherein the third subpixel electrode is disposed between the second subpixel electrode and the fourth subpixel electrode,
wherein the second end portion of the second roof layer and a first end portion of the third roof layer are disposed between the first end portion of the second roof layer and a second end portion of the third roof layer, and
wherein the first end portion of the third roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
5. The display device of claim 4, further comprising:
a third support member, which overlaps the second end portion of the third roof layer in the first direction.
6. The display device of claim 1, further comprising:
a step member disposed between the first support member and the first roof layer, wherein a width of the step member in the second direction is larger than a width of the first support member in the second direction.
7. The display device of claim 6, wherein the first support member, the first roof layer, and the step member are made of a same material.
8. The display device of claim 1, further comprising:
an insulating layer disposed between the first support member and the first subpixel electrode,
wherein the first support member overlaps the first subpixel electrode in the first direction.
9. The display device of claim 1, wherein the first support member does not overlap the first subpixel electrode in the first direction.
10. A method for manufacturing a display device, the method comprising:
forming a first subpixel electrode and a second subpixel electrode, the second subpixel electrode immediately neighboring the first subpixel electrode without any subpixel electrode being disposed between the first subpixel electrode and the second subpixel electrode;
forming a first roof layer and a second roof layer;
forming a first support member and a second support member, wherein the first support member overlaps a first end portion of the first roof layer in a first direction, wherein the second support member overlaps a first end portion of the second roof layer in the first direction, and wherein the first end portion of the first roof layer and the first end portion of the second roof layer are disposed between a second end portion of the first roof layer and a second end portion of the second roof layer; and
forming a first cavity and a second cavity, wherein a portion of the first cavity is positioned between the first subpixel electrode and the first roof layer, and wherein a first portion of the second cavity is positioned between the second subpixel electrode and the second roof layer.
11. The method of claim 10,
wherein the second end portion of the first roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member, and
wherein the second end portion of the second roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
12. The method of claim 10, further comprising:
forming a third subpixel electrode, which immediately neighbors the second subpixel electrode without any subpixel electrode being disposed between the second subpixel electrode and the third subpixel electrode,
wherein the second subpixel electrode is disposed between the first subpixel electrode and the third subpixel electrode,
wherein the second roof layer overlaps both the second subpixel electrode and the third subpixel electrode,
wherein a second portion of the second cavity is positioned between the third subpixel electrode and the second roof layer,
wherein a center portion of the second roof layer is disposed between the first end portion of the second roof layer and the second end portion of the second roof layer, and
wherein the center portion of the second roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
13. The method of claim 12, further comprising:
forming a fourth subpixel electrode, which immediately neighbors the third subpixel electrode without any subpixel electrode being disposed between the third subpixel electrode and the fourth subpixel electrode;
forming a third roof layer, which overlaps the fourth subpixel electrode in the first direction; and
forming a third cavity, wherein a portion of the third cavity is positioned between the fourth subpixel electrode and the third roof layer,
wherein the third subpixel electrode is disposed between the second subpixel electrode and the fourth subpixel electrode,
wherein the second end portion of the second roof layer and a first end portion of the third roof layer are disposed between the first end portion of the second roof layer and a second end portion of the third roof layer, and
wherein the first end portion of the third roof layer does not overlap, in the first direction, any support member that is analogous to the first support member or the second support member.
14. The method of claim 13, further comprising:
forming a third support member, which overlaps the second end portion of the third roof layer in the first direction.
15. The method of claim 13, further comprising:
providing a liquid crystal material through a gap between the second roof layer and the third roof layer to the second cavity and the third cavity; and
preventing providing any liquid crystal material through a gap between the first roof layer and the second roof layer.
16. The method of claim 13, further comprising:
providing an alignment layer material through a gap between the second roof layer and the third roof layer to the second cavity and the third cavity; and
preventing providing any alignment layer material through a gap between the first roof layer and the second roof layer.
17. The method of claim 10, further comprising:
forming a step member between the first support member and the first roof layer, wherein a width of the step member in a second direction is larger than a width of the first support member in the second direction.
18. The method of claim 10, further comprising:
forming the first support member, the first roof layer, and a step member between the first support member and the first roof layer using a same material.
19. The method of claim 10, further comprising:
forming an insulating layer between the first support member and the first subpixel electrode,
wherein the first support member overlaps the first subpixel electrode in the first direction.
20. The method of claim 10, wherein the first support member does not overlap the first subpixel electrode in the first direction.
21. A display device comprising:
a substrate including a plurality of pixel areas;
a thin film transistor formed on the substrate;
a pixel electrode connected to the thin film transistor and formed in the pixel area;
a roof layer formed on the pixel electrode to be spaced apart from the pixel electrode with a microcavity;
an injection hole formed at the roof layer so as to expose a part of the microcavity;
a support member adjacent to the injection hole and formed in a column shape in the microcavity;
a liquid crystal layer filling the microcavity; and
an encapsulation layer formed on the roof layer so as to cover the injection hole to seal the microcavity,
wherein the support members are formed at opposite edges of the two adjacent microcavities, respectively.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A rechargeable battery, comprising:
a bare cell comprising,
an electrode assembly comprising two electrodes and a separator,
a can to contain the electrode assembly and an electrolyte, and
a cap assembly comprising a cap plate to seal an open portion of the can, and

a protective circuit board comprising an electrical terminal arranged horizontally and parallel to the cap plate on a surface of the protective circuit board.
2. The rechargeable battery of claim 1,
wherein the electrical terminal of the protective circuit board is coupled with and makes surface contact with a horizontal corresponding electrical terminal arranged on the bare cell or arranged on a safety device arranged between the protective circuit board and the bare cell.
3. The rechargeable battery of claim 2,
wherein the electrical terminal of the protective circuit board is at least partially welded to the corresponding electrical terminal.
4. The rechargeable battery of claim 2,
wherein the electrical terminal of the protective circuit board is coupled with the corresponding electrical terminal by a conductive adhesive.
5. The rechargeable battery of claim 1,
wherein the electrical terminal of the protective circuit board is exposed at both an upper surface and a lower surface of the protective circuit board.
6. A rechargeable battery, comprising:
a bare cell comprising,
an electrode assembly comprising two electrodes and a separator,
a can to contain the electrode assembly and an electrolyte, and
a cap assembly comprising a cap plate to seal an open portion of the can;
a protective circuit board comprising an electrical terminal arranged horizontally and parallel to the cap plate on a surface of the protective circuit board; and

a current interruption device arranged between the cap plate and the protective circuit board, the current interruption device comprising an upper electrode arranged horizontally, a body to sense heat and interrupt current, and a lower electrode arranged horizontally,
wherein the lower electrode of the current interruption device is connected to the cap plate, and
wherein the upper electrode of the current interruption device and an electrode terminal of the cap assembly are electrically coupled with the electrical terminal of the protective circuit board.
7. The rechargeable battery of claim 6,
wherein the current interruption device is a bimetal switch-type breaker or a positive temperature coefficient device.
8. The rechargeable battery of claim 6,
wherein the electrode terminal of the protective circuit board is arranged between a center portion of the cap plate and a side of the cap plate.
9. The rechargeable battery of claim 8,
wherein the electrode terminal of the protective circuit board is arranged above and overlaps the current interruption device.
10. The rechargeable battery of claim 6,
wherein the upper electrode of the current interruption device comprises nickel or is coupled with a separate metal plate that comprises nickel.
11. The rechargeable battery of claim 6,
wherein the lower electrode of the current interruption device comprises metal having good thermal conductivity.
12. The rechargeable battery of claim 11,
wherein the metal having good thermal conductivity is aluminum.
13. The rechargeable battery of claim 6,
wherein the lower electrode of the current interruption device extends beyond the edges of other parts of the current interruption device and acts as a terminal for welding.
14. The rechargeable battery of claim 11,
wherein the lower electrode of the current interruption device extends beyond the edges of other parts of the current interruption device and acts as a terminal for welding.
15. The rechargeable battery of claim 6,
wherein the upper electrode of the current interruption device is thicker than the lower electrode of the current interruption device.
16. The rechargeable battery of claim 10,
wherein the upper electrode of the current interruption device is thicker than the lower electrode of the current interruption device.
17. The rechargeable battery of claim 6,
wherein the upper electrode of the current interruption device extends beyond the edges of other parts of the current interruption device in the lateral direction.
18. The rechargeable battery of claim 6,
wherein an upper end of an electrode terminal of the cap plate extends beyond the edges of other parts of the electrode terminal of the cap plate in the lateral direction.
19. The rechargeable battery of claim 6,
wherein a hot-melt resin fills a space between the bare cell and the protective circuit board.

1. A damper assembly comprising:
a linear motion to rotary motion conversion mechanism including;
an outer tube member;
an inner tube member reciprocally movable and at least partially disposed within said outer tube member, wherein said inner tube member is adapted for generally linear translation in a first and a second direction;
a shaft rotatably mounted to and at least partially disposed with respect to said inner tube member;
wherein translation of said inner tube member in one of said first or said second directions produces a rotation of said shaft;

a damping mechanism including;
a rotor fixed to said shaft;
a coil sufficiently configured to generate an electromagnetic field in response to an applied current;
a magneto-rheological fluid in contact with said rotor, said magneto-rheological fluid having a variable viscosity in the presence of said electromagnetic field; and

wherein application of said electromagnetic field to said magneto-rheological fluid produces changes in the viscosity of said magneto-rheological fluid that in turn provides variable resistance to rotation of said rotor and translation of said inner tube member within said outer tube member.
2. The damper assembly of claim 1, further comprising:
a nut member mounted with respect to said inner tube member;
wherein said nut member is sufficiently configured to threadably receive said shaft; and
wherein said nut member is operable to cause rotation of said rotatable shaft as said inner tube member is translated.
3. The damper assembly of claim 2, wherein said nut has a ball screw configuration.
4. The damper assembly of claim 2, further comprising:
a nut housing mounted with respect to said inner tube member and sufficiently configured to receive at least a portion of said nut member; and
a bushing disposed about the periphery of said nut housing and engageable with an inner surface of said outer tube member.
5. The damper assembly of claim 1, further comprising:
an end cap mounted with respect to said inner tube member;
a dust shield depending or extending from said end cap; and
wherein said dust shield is sufficiently configured to receive at least a portion of said outer tube member.
6. The damper assembly of claim 1, further comprising:
a first attachment member operable to mount the damper assembly, wherein said first attachment member is mounted with respect to said inner tube member; and
a second attachment member operable to mount the damper assembly, wherein said second attachment member is mounted with respect to said damping mechanism.
7. The damper assembly of claim 1, wherein said rotor includes:
a hub portion extending generally radially from said rotatable shaft; and
a drum portion extending generally axially from said hub portion.
8. The damper assembly of claim 7, wherein said hub portion is formed from non-magnetic material and defines at least one orifice sufficiently configured to promote the movement of said magneto-rheological fluid within said damping mechanism.
9. The damper assembly of claim 7, wherein said drum portion includes a generally annular non-magnetic portion operable to shape said electromagnetic field.
10. The damper assembly of claim 9, wherein said generally annular non-magnetic portion defines at least one orifice sufficiently configured to promote the movement of said magneto-rheological fluid within said damping mechanism.
11. The damper assembly of claim 7, wherein the drum portion includes a surface treatment to increase at least one of the surface roughness and wear resistance of said drum portion.
12. The damper assembly of claim 11, wherein said surface treatment is electro-spark deposition of tungsten carbide.
13. The damper assembly of claim 1, further comprising a sensor assembly operable to determine at least one of rotational velocity and position of said shaft.
14. A damper assembly comprising:
a linear motion to rotary motion conversion mechanism including;
a generally cylindrical outer tube member;
a generally cylindrical inner tube member reciprocally movable and at least partially disposed within said generally cylindrical outer tube member, wherein said generally cylindrical inner tube member is adapted for generally linear translation in a first and a second direction;
a shaft rotatably mounted with respect to and at least partially disposed within said inner tube member;
wherein translation of said generally cylindrical inner tube member in one of said first or said second directions produces a rotation of said shaft;
a nut member mounted with respect to said generally cylindrical inner tube member, wherein said nut member is sufficiently configured to threadably receive said shaft and wherein said nut member is operable to cause rotation of said shaft as said generally cylindrical inner tube member is translated in one of said first and second direction;

a damping mechanism including;
a housing;
a rotor fixed to said rotatable shaft;
a coil sufficiently configured to generate a variable electromagnetic field in response to an applied current;
a magneto-rheological fluid in contact with said rotor, said magneto-rheological fluid having a variable viscosity in the presence of said electromagnetic field;
wherein said housing is sufficiently configured to receive at least portions of said coil, said rotor, and said magneto-rheological fluid; and

wherein application of said variable electromagnetic field to said magneto-rheological fluid produces changes in the viscosity of said magneto-rheological fluid that in turn provides variable resistance to rotation of said rotor and translation of said generally cylindrical inner tube member within said generally cylindrical outer tube member.
15. The damper assembly of claim 14, wherein said rotor includes:
a hub portion extending generally radially from said rotatable shaft;
a drum portion extending generally axially from said hub portion; and
wherein at least one of said hub portion and said drum portion defines at least one orifice sufficiently configured to promote the movement of said magneto-rheological fluid within said damping mechanism.
16. The damper assembly of claim 14, wherein said rotor includes:
a hub portion extending generally radially from said rotatable shaft;
a drum portion extending generally axially from said hub portion; and
wherein said drum portion includes an electro-spark deposition of tungsten carbide to increase the surface roughness and wear resistance of said drum portion.
17. The damper assembly of claim 14, wherein said rotor includes:
a hub portion extending generally radially from said rotatable shaft;
a drum portion extending generally axially from said hub portion; and
wherein said drum portion includes a generally annular non-magnetic portion operable to shape said electromagnetic field.
18. The damper assembly of claim 14, further comprising:
a nut housing mounted with respect to said generally cylindrical inner tube member and sufficiently configured to receive at least a portion of said nut member; and
a bushing disposed about the periphery of said nut housing and engageable with an inner surface of said generally cylindrical outer tube member.
19. A damper assembly for a vehicle suspension having a variable resistive force, the damper assembly comprising:
a linear motion to rotary motion conversion mechanism including;
a generally cylindrical outer tube member;
a generally cylindrical inner tube member reciprocally movable and at least partially disposed within said generally cylindrical outer tube member, wherein said generally cylindrical inner tube member is adapted for generally linear translation in a first and a second direction;
a shaft rotatably mounted with respect to and at least partially disposed within said generally cylindrical inner tube member;
wherein translation of said generally cylindrical inner tube member in one of said first or said second directions produces a rotation of said shaft;
a nut member mounted with respect to said generally cylindrical inner tube member, wherein said nut member is sufficiently configured to receive said rotatable shaft and wherein said nut member is operable to cause rotation of said rotatable shaft as said generally cylindrical inner tube member is translated in one of said first and second directions;

a damping mechanism including;
a housing;
a rotor fixed to said shaft;
a coil sufficiently configured to generate a variable electromagnetic field in response to an applied current;
a magneto-rheological fluid in contact with said rotor, said magneto-rheological fluid having a variable viscosity in the presence of said electromagnetic field;
wherein said housing is sufficiently configured to receive at least portions of said coil, said rotor, and said magneto-rheological fluid; and

wherein application of said variable electromagnetic field to said variable magneto-rheological fluid produces changes in the viscosity of said magneto-rheological fluid that in turn provides variable resistance to rotation of said rotor and translation of said generally cylindrical inner tube member within said generally cylindrical outer tube member.
20. The damper assembly of claim 19, wherein said rotor includes:
a hub portion extending generally radially from said shaft;
a drum portion extending generally axially from said hub portion;
wherein at least one of said hub portion and said drum portion defines at least one orifice sufficiently configured to promote the movement of said magneto-rheological fluid within said damping mechanism; and
wherein said drum portion includes an electro-spark deposition of material having sufficient properties to increase the surface roughness and wear resistance of said drum portion.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor, comprising the steps of:
performing a low-voltage well implantation process on a semiconductor substrate to form a first well in a first region of the substrate and a second well in a second region of the substrate;
forming a first and second gate oxide layers and a first and second gate electrodes in the first and second regions, respectively;
forming a first photoresist pattern to expose the first region;
forming a first LDD region in the first region exposed by the first photoresist pattern and the first gate electrode;
removing the first photoresist pattern;
forming a second photoresist pattern to expose the second region;
forming a second LDD region in the second region exposed by the second photoresist pattern and the second gate electrode;
performing a compensational implantation on the second region to adjust a well concentration for the high-voltage MOS transistor; and
removing the second photoresist pattern.
2. The method of claim 1, wherein the second region contains a NMOS high-voltage transistor, and the compensational implantation comprises implanting impurity ions having a conductivity type opposite to the second well.
3. The method of claim 2, wherein compensational implantation conditions comprise an implantation energy of 100-250 KeV, and a dose of 1E12-1E13 ionscm2.
4. The method of claim 1, wherein the second region contains a NMOS high-voltage transistor, and the compensational implantation is performed under conditions comprising impurity ions having a conductivity type opposite to the second well, an implantation energy of 170 KeV, and a dose of 4.3E12 ionscm2.
5. The method of claim 1, wherein the second region contains a PMOS high-voltage transistor, and the compensational implantation comprises impurity ions having a conductivity type identical to the second well.
6. The method of claim 5, wherein the compensational implantation conditions comprise an implantation energy of 100-250 KeV, and a dose of 1E12-5E12 ionscm2.
7. The method of claim 1, wherein the second region contains a PMOS high-voltage transistor, and the compensational implantation is performed under conditions comprising impurity ions having a conductivity type identical to the second well, an implantation energy of 170 KeV, and a dose of 2.5E12 ionscm2.
8. The method of claim 1, wherein the first and second gate oxide layers are formed simultaneously, and the first and second gate electrodes are formed simultaneously.
9. The method of claim 1, wherein the first photoresist pattern blocks implantation into the second region, and the second photoresist pattern blocks implantation into the first region.
10. A method for manufacturing a semiconductor device including a low-voltage MOS transistor and a high-voltage MOS transistor, comprising the steps of:
performing a low-voltage well implantation process on a semiconductor substrate to form a first well in a first region of the substrate, and a second well in a second region of the substrate;
forming first and second gate oxide layers and first and second gate electrodes in the first and second regions, respectively;
forming a first photoresist pattern to expose the first region;
forming a first LDD region in the first region exposed by the first photoresist pattern and the first gate electrode;
removing the first photoresist pattern;
forming a second photoresist pattern to expose the second region;
performing a compensational implantation on the second region to adjust a well concentration for the high-voltage MOS transistor;
forming a second LDD region in the second region exposed by the second photoresist pattern and the second gate electrode; and
removing the second photoresist pattern.
11. The method of claim 10, wherein the second region contains a NMOS high-voltage transistor, and the compensational implantation comprises impurity ions having a conductivity type opposite to the second well.
12. The method of claim 11, wherein compensational implantation conditions comprise an implantation energy of 100-250 KeV, and a dose of 1E12-1E13 ionscm2.
13. The method of claim 10, wherein the second region contains a NMOS high-voltage transistor, and the compensational implantation is performed under conditions comprising impurity ions having a conductivity type opposite to the second well, an implantation energy of 170 KeV, and a dose of 4.3E12 ionscm2.
14. The method of claim 10, wherein the second region contains a PMOS high-voltage transistor, and the compensational implantation comprises impurity ions having a conductivity type identical to the second well.
15. The method of claim 14, wherein the compensational implantation conditions comprise an implantation energy of 100-250 KeV, and a dose of 1E12-5E12 ionscm2.
16. The method of claim 10, wherein the second region contains a PMOS high-voltage transistor, and the compensational implantation is performed under conditions comprising impurity ions having a conductivity type identical to the second well, an implantation energy of 170 KeV, and a dose of 2.5E12 ionscm2.
17. The method of claim 10, wherein the first and second gate electrodes are formed simultaneously.
18. The method of claim 17, wherein the first and second gate oxide layers are formed simultaneously.
19. The method of claim 10, wherein the first photoresist pattern blocks implantation into the second region.
20. The method of claim 19, wherein the second photoresist pattern blocks implantation into the first region.