All The Claims

1. A press cage comprising:
first and second wall plates, the first wall plate being orthogonal with respect to the second wall plate, the first wall plate comprising a machined indentation located on a face of the first wall plate, and the second wall plate comprising a machined indentation located on a face of the second wall plate, the machined indentations of the first and second wall plates being adjacent to one another; and
a coupler assembly comprising coupler parts that are locked together, a first coupler part of the coupler parts fixed to the machined indentation of the first wall plate, and a second coupler part of the coupler parts fixed to the machined indentation of the second wall plate.
2. The press cage of claim 1, wherein the coupler parts are identical.
3. The press cage of claim 1, wherein the coupler assembly is to couple the first and second wall plates that are adjacent and orthogonal to one another.
4. The press cage of claim 1, further comprising a third wall plate, wherein the coupler assembly is to couple the first, second, and third wall plates that are adjacent and orthogonal to one another.
5. The press cage of claim 4, wherein the coupler assembly further comprises a third coupler part locked to the first and second coupler parts, the third coupler part fixed to a machined indentation on a face of the third wall plate.
6. The press cage of claim 1, wherein each respective coupler part of the coupler parts includes a bore for accommodating a screw to fix the respective coupler part to the machined indentation of a respective wall plate of the first and second wall plates.
7. The press cage of claim 6, wherein a bore extends between internally facing facets of the coupler parts to accommodate a locking screw.
8. The press cage of claim 7, wherein the coupler parts comprise respective flanges provided on respective different sides of the bore, and the press cage further comprises a fastening ring placed over the flanges.
9. The press cage of claim 1, wherein machined indentations are placed opposingly on both sides of each wall plate of the wall plates.
10. The press cage of claim 1, wherein each of the coupler parts comprises:
an outer facet to contact the machined indentation of a respective wall plate of the first and second wall plates, the outer facet including a first member to engage a second member of the machined indentation of the respective wall plate, the first member including a protrusion to engage a groove of the second member,
the outer facet of one of the coupler parts being orthogonal to the outer facet of another one of the coupler parts, and the coupler parts having adjacent internally facing facets, wherein the coupler parts are identical, wherein a bore extends between the internally facing facets of the coupler parts, and
the press cage further comprises a locking mechanism comprising a locking screw extending through the bore to lock the coupler parts together.
11. The press cage of claim 10, wherein the internally facing facet of the first coupler part is angled with respect to the outer facet of the first coupler part, and the internally facing facet of the second coupler part is angled with respect to the outer facet of the second coupler part.
12. The press cage of claim 11, wherein the internally facing facet of the first coupler part is at a 45\xb0 angle with respect to the outer facet of the first coupler part, and the internally facing facet of the second coupler part is at a 45\xb0 angle with respect to the outer facet of the second coupler part.
13. The press cage of claim 1, wherein the coupler parts are made of metal.
14. A method of forming a press cage, comprising:
arranging a first wall plate to be orthogonal with respect to a second wall plate, the first wall plate comprising a machined indentation located on a face of the first wall plate, and the second wall plate comprising a machined indentation located on a face of the second wall plate, the machined indentations of the first and second wall plates being adjacent to one another; and
coupling, by a coupler assembly comprising coupler parts that are locked together, the first and second wall plates together, a first coupler part of the coupler parts fixed to the machined indentation of the first wall plate, and a second coupler part of the coupler parts fixed to the machined indentation of the second wall plate.
15. The method of claim 14, wherein the coupler parts are identical.
16. The method of claim 14, further comprising coupling, by the coupler assembly, a third wall plate to the first and second wall plates, the first, second, and third wall plates being adjacent and orthogonal to one another.
17. The method of claim 16, wherein the coupler assembly further comprises a third coupler part locked to the first and second coupler parts, the third coupler part fixed to a machined indentation on a face of the third wall plate.
18. The method of claim 14, further comprising providing a bore in each respective coupler part of the coupler parts for accommodating a screw to fix the respective coupler part to the machined indentation of a respective wall plate of the first and second wall plates.
19. The method of claim 14, wherein each of the coupler parts comprises:
an outer facet to contact the machined indentation of a respective wall plate of the first and second wall plates, the outer facet including a first member to engage a second member of the machined indentation of the respective wall plate, the first member including a protrusion to engage a groove of the second member,
the outer facet of one of the coupler parts being orthogonal to the outer facet of another one of the coupler parts, and the coupler parts having adjacent internally facing facets, wherein the coupler parts are identical, wherein a bore extends between the internally facing facets of the coupler parts, and
the method further comprising extending a locking screw through the bore to lock the coupler parts together.
20. The press cage of claim 19, wherein the internally facing facet of the first coupler part is angled with respect to the outer facet of the first coupler part, and the internally facing facet of the second coupler part is angled with respect to the outer facet of the second coupler part.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A corriputer-implemented video capture process, comprising:
identifying and tracking a face in a plurality of real-time video frames on a first computing device;
generating first face data representative of the identified and tracked face; and
transmitting the first face data to a second computing device over a network for display of the face on an avatar body by the second computing device in real time.
2. The method of claim 1, wherein tracking the face comprises identifying a position and orientation of the face in successive video frames.
3. The method of claim 1, wherein tracking the face comprises identifying a plurality of salient points on the face and tracking frame-to-frame changes in positions of the salient points.
4. The method of claim 3, further comprising identifying changes in spacing between the salient points and recognizing the changes in space as forward or backward movement by the face.
5. The method of claim 1, further comprising generating animated objects and moving the animated objects with tracked motion of the face.
6. The method of claim 1, further comprising changing a first-person view displayed by the first computing device based on motion by the face.
7. The method of claim 1, wherein the first face data comprises position and orientation data.
8. The method of claim 1, wherein the first face data comprises three-dimensional points for a facial mask and image data from the video frames to be combined with the facial mask.
9. The method of claim 1, further comprising receiving second face data from the second computing device and displaying with the first computing device video information for the second face data in real time on an avatar body.
10. The method of claim 9, further comprising displaying on the first computing device video information for the first face data simultaneously with displaying with the first computing device video information for the second face data.
11. The method of claim 9, wherein transmission of face data between the computing devices is conducted in a peer-to-peer arrangement.
12. The method of claim 11, further comprising receiving from a central server system game status information and displaying the game status information with the first computing device.
13. A recordable-medium having recorded thereon instructions, which when performed, cause a computing device to perform actions comprising:
identifying and tracking a face in a plurality of real-time video frames on a first computing device;
generating first face data representative of the identified and tracked face; and
transmitting the first face data to a second computing device over a network for display of the face on an avatar body by the second computing device.
14. The recordable medium of claim 13, wherein tracking the face comprises identifying a plurality of salient points on the face and tracking frame-to-frame changes in positions of the salient points.
15. The recordable medium of claim 14, wherein the medium further comprises instructions that when executed receive second face data from the second computing device and display with the first computing device video information for the second face data in real time on an avatar body.
16. A computer-implemented video game system, comprising:
a web cam connected to a first corriputing device and positioned to obtain video frame data of a face;
a face tracker to locate a first face in the video frame data and track the first face as it moves in successive video frames; and
a processor executing a game presentation module to cause generation of video for a second face from a remote computing device in near real time by the first computing device.
17. The system of claim 16, wherein the face tracker is programmed to trim the first face from the successive video frames and to block the transmission of non-face video information.
18. The system of claim 16, further comprising a codec configured to encode video frame data for the first face for transmission to the remote computing device, and to decode video frame data for the second face received from the remote computing device.
19. The system of claim 18, further comprising a peer-to-peer application manager for routing the video frame data between the first computing device and the remote computing device.
20. The system of claim 16, further comprising an engine to correlate video data for the first face with a three-dimensional mask associated with the first face.
21. The system of claim 16, further comprising a plurality of real-time servers configured to provide game status information to the first computing device and the remote computing device.
22. The system of claim 16, wherein the game presentation module receives game status information from a remote coordinating server and generates data for a graphical representation of the game status information for display with the video of the second face.
23. A computer-implemented video game system, comprising:
a web cam positioned to obtain video frame data of a face; and
means for tracking the face in successive frames as the face moves and for providing data of the tracked face for use by a remote device.

1. An in-ground camera, comprising:
an in-ground, secure, recessed mounting interface; and
an upper surface portion, the upper surface portion operatively associated with a camera lens, primary camera components, and a media output interface or cable, wherein the upper surface portion is devoid of pointed edges and provides a downwardly concave profile having a lens and lens viewing cutout, wherein the lens and lens viewing cutout is configured to provide a lens view along a surface of or view upward from the surface of the ground, wherein the in-ground camera upper surface incorporates an air or fluid spray system provided through at least one aperture in the lens viewing cutout for cleaning the lens of the camera during use; and
wherein the upper surface portion presents no moving parts such that the upper surface is resistant to the forces of high-speed vehicles passing thereover.
2. An in-ground camera in accordance with claim 1, wherein said upper surface portion and said primary camera components are detachable from said in-ground, secure recessed mounting interface.
3. An in-ground camera in accordance with claim 1, wherein said in-ground, secure, recessed mounting interface comprises a base portion that is secured within a hole in the ground and that is configured to receive the upper surface portion and primary camera components.
4. An in-ground camera in accordance with claim 3, wherein said base portion includes at least one recess for receiving at least a portion of the primary camera components.
5. An in-ground camera in accordance with claim 1, wherein said ground comprises a racetrack surface.
6. An in-ground camera in accordance with claim 1, wherein said surface portion comprises a hardened material that is resistant to the forces of high-speed vehicles passing thereover.
7. An in-ground camera in accordance with claim 1, wherein the upper surface portion of the camera housing comprises an at least partially dome like surface that is devoid of exposed pointed edges.
8. An in-ground camera in accordance with claim 1, wherein the camera rises a maximum distance of about 0.25 inches above the surface of the ground.
9. An in-ground camera in accordance with claim 1, wherein the upper surface has a diameter of about 4 inches to provide a gentle transition between the ground surface and the top surface of the camera housing.
10. An in-ground camera in accordance with claim 1, wherein the in-ground camera upper surface incorporates a microphone to provide audio with camera video.
11. An in-ground camera in accordance with claim 1, wherein the air or fluid spray system comprises plural air or fluid spray apertures provided within the cutout.
12. An in-ground camera in accordance with claim 1, wherein the cutout is configured to direct airflow of such high-speed vehicles passing thereover towards the lens to clear or dry the lens.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method of manufacturing semiconductor devices, comprising:
forming an insulating layer over a semiconductor substrate;
forming contact holes in the insulating layer;
forming a conductive layer over the insulating layer to burying the contact holes;
rotating the semiconductor substrate; and
etching the conductive layer by supplying an etching composition on the rotating semiconductor substrate,
wherein the etching composition comprises a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3 at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution, and
wherein the oxidant, the enhancer, and the buffer solution have a mixing ratio such that after the etching, the material of the conductive layer is only present inside the contact hole and does not remain over the insulating layer.
2. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the buffer solution comprises a deionized water.
3. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the conductive layer comprises a material selected from the group consisting of tungsten (W), copper (Cu) , and polysilicon.
4. A method of manufacturing semiconductor devices, as recited in claim 3, further comprising forming a barrier metal layer over the semiconductor substrate and the insulating layer, after forming contact holes in the insulating layer, but before forming the conductive layer.
5. A method of manufacturing semiconductor devices, as recited in claim 4, wherein the barrier metal layer comprises a material selected from the group of Ti, TiN, TiTiN, Ta, TaN, and TaTaN.
6. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
7. A method of manufacturing semiconductor devices, as recited in claim 1, wherein the processing temper atu re of the etching composition is in the range of 20 to 90 C.
8. A method of manufacturing semiconductor devices, as recited in claim 7, wherein the semiconductor substrate is heated to about the processing temperature of the etching composition.
9. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 0.01 to 30 weight percent of HNO3, as an oxidant, 0.01 to 30 weight percent of NH4F as an enhancer, and a remaining weight percent of deionized water.
10. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 3 to 55 weight percent of HNO3, as an oxidant, 0.2 to 35 weight percent of HF, as an enhancer, and a remaining weight percent of deionized water.
11. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 0.2 to 30 weight percent of H2O2, as an oxidant, 0.01 to 30 weight percent of NH4OH, as an enhancer, and a remaining weight percent of deionized water.
12. A method of manufacturing semiconductor devices, as recited in claim 3, wherein the etching composition comprises 3 to 60 weight percent of HNO3, as an oxidant, 0.06 to 30 weight percent of HF, as an enhancer, and a remaining weight percent of deionized water.
13. A method of manufacturing semiconductor devices as recited in claim 1, wherein the etching of the conductive layer is carried out by at least two etching processes
14. A method of manufacturing semiconductor devices comprising the steps of:
forming a pattern structure over a semiconductor substrate;
forming an interlayer dielectric layer over the semiconductor substrate and the pattern structure;
rotating the semiconductor substrate; and
etching the interlayer dielectric layer by supplying on the rotating semiconductor substrate an etching composition comprising a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution,
wherein the oxidant, enhancer, and buffer solution are mixed in a certain mixing ratio such that the etching planarizes the interlayer dielectric layer.
15. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the interlayer dielectric layer comprises a material selected from the group consisting of an oxide, a nitride, borophosphosilicate, and tetraethylorthosilicate.
16. A method of manufacturing semiconductor devices, as recited in claim 15, wherein the etching composition comprises 0.01 to 60 weight percent of HNO3, as an oxidant, 0.05 to 25 weight percent of HF as an enhancer, and a remaining weight percent of deionized water.
17. A method of manufacturing semiconductor devices, as recited in claim 15, wherein the etching composition comprises 0.01 to 30 weight percent of HNO3 as an oxidant, 0.01 to 30 weight percent of NH4F as an enhancer, and a remaining weight percent of deionized water.
18. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the rotation speed of the semiconductor substrate is between 200 to 5000 rotations per minute.
19. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
20. A method of manufacturing semiconductor devices, as recited in claim 19, wherein the boom swing comprises long distance boom swing and short distance boom swing, which are carried out sequentially.
21. A method of manufacturing semiconductor devices, as recited in claim 14, wherein the semiconductor substrate is heated to about the processing temperature of the etching composition.
22. A method of manufacturing semiconductor devices comprising:
forming an insulating layer over a semiconductor substrate;
forming contact holes in the insulating layer;
forming a covering layer over the insulating layer to bury the contact holes;
rotating the semiconductor substrate;
heating the semiconductor substrate by supplying hot gas to the back side of the semiconductor substrate; and
etching the covering layer by supplying an etching composition on the rotating semiconductor substrate,
wherein the material of the covering layer is only present inside the contact hole and does not remain over the insulating layer after the etching.
23. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the etching composition comprises a mixture of at least one oxidant selected from the group consisting of H2O2, O2, IO4, BrO3, ClO3, S2O8, KIO3, H5IO6, KOH, and HNO3, at least one enhancer selected from the group consisting of HF, NH4OH, H3PO4, H2SO4, NH4F, and HCl, and a buffer solution,
24. A method of manufacturing semiconductor devices, as recited in claim 23, wherein the buffer solution comprises deionized water.
25. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the covering layer comprises a conductive layer or an interlayer dielectric layer.
26. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the hot gas comprises an inert gas, and the temperature of the hot gas is in the range of 20 C. to 90 C.
27. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the etching composition is supplied by a nozzle placed over the semiconductor substrate, the nozzle experiencing boom swing either to the right of center or to the left of center of the semiconductor substrate.
28. A method of manufacturing semiconductor devices, as recited in claim 22, wherein the processing temperature of the etching composition is in the range of 20 C. to 90 C.
29. A semiconductor substrate, comprising:
a cell region including a conductive plug comprised of a conductive material; and
a peripheral region including a hole pattern for use as one of an align mark or a scribe line,
wherein the hole pattern contains none of the conductive material.
30. A semiconductor substrate, as recited in claim 29, wherein the conductive material comprises a material selected from the group consisting of tungsten (W), copper (Cu), or polysilicon.