All The Claims

1. A complex comprising a hard-hard-hard pincer ligand, an early transition metal and a nitride bound to said metal.
2. The complex of claim 1, wherein said pincer ligand is an OCO pincer ligand.
3. The complex of claim 2, wherein said OCO pincer ligand is derived from:
where all carbons at positions 3,4,5,4\u2032,5\u20326\u2032,3\u2033,4\u2033 and 5\u2033 can be substituted with an alkyl or other substituent that is unreactive toward said metal and said nitride.
4. The complex of claim 1, wherein said metal comprises Mo.
5. The complex of claim 1, wherein said nitride is bonded to said metal by a triple bond.
6. The complex of claim 1, wherein said complex has the structure:
7. A method of forming a nitrogen comprising molecule comprising the steps of:
providing a complex comprising a hard-hard-hard pincer ligand, an early transition metal and a nitride bound to said metal;
providing an electrophilic reagent;
mixing said electrophilic reagent with said complex, wherein said complex transfers the nitrogen of said nitride to said electrophilic reagent; and
isolating said nitrogen comprising molecule.
8. The method of claim 7, wherein said pincer ligand is an OCO pincer ligand.
9. The method of claim 7, wherein said OCO pincer ligand is derived from:
where all carbons at positions 3,4,5,4\u2032,5\u2032,6\u2032,3\u2033,4\u2033 and 5\u2033 can be substituted with an alkyl or other substituent that is unreactive toward said metal and said nitride.
10. The method of claim 7, wherein said metal comprises Mo.
11. The method of claim 7, wherein said nitride is bonded to said metal by a triple bond.
12. The method of claim 7, wherein said complex comprises:
13. The method of claim 7, wherein said step of providing a complex comprises said complex in a solvent.
14. The method of claim 7, wherein said step of providing an electrophilic reagent comprises said reagent in a solvent.
15. The method of claim 7, wherein said electrophilic reagent comprises an acid chloride and said nitrogen comprising compound comprises a nitrile.
16. The method of claim 15, wherein said acid chloride comprises trimethylacetyl chloride.
17. The method of claim 7, wherein said complex comprises II, said electrophilic reagent comprises trimethylacetyl chloride, and said nitrogen comprising molecule comprises trimethylacetonitrile.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A concentrate dispensing system for dispensing a fluid for dilution, comprising a bracket and a bottle, wherein the bracket is arranged to releasably hold the bottle; the bottle is arranged to dispense a predetermined quantity of the fluid to a first receptacle type, which is freestanding, when the bottle is in a freehand mode and is not held in the bracket; and the bottle is arranged to dispense a predetermined quantity of the fluid to a second receptacle type, which is received and guided by the bracket, when the bottle is in a bracket mode and is held in the bracket.
2. A system as claimed in claim 1, wherein the predetermined volume of fluid dispensed from the bottle in the freehand mode and in the bracket mode is dependent upon whether the bottle is in the freehand mode or in the bracket mode.
3. A system as claimed in claim 1, wherein the bottle comprises a bottle actuation means, a valve and a bracket actuation means, the bottle actuation means being arranged to actuate the valve to dispense a first volume of fluid from an outlet when the bottle is in the freehand mode, and the bracket actuation means being arranged to actuate the valve to dispense a second volume of fluid from the outlet when the bottle is in the bracket mode.
4. A system as claimed in claim 1, wherein a greater volume of fluid is dispensed in the freehand mode than in the bracket mode.
5. A system as claimed in claim 1, wherein the volume of fluid dispensed in the bracket mode is dependent upon the receptacle.
6. A system as claimed in claim 1, wherein the first receptacle is a bucket or a cleaning buggy and the second receptacle is a handheld trigger spray bottle.
7. A system as claimed in claim 3, wherein the bottle actuation means comprises a trigger, the trigger being arranged to engage and actuate the valve.
8. A system as claimed in claim 7 further comprising a safety lock, wherein the safety lock is arranged to bring the trigger into and out of engagement with the valve, such that in order to dispense fluid in the freehand mode the safety lock and trigger must be operated simultaneously.
9. A system as claimed in claim 8, wherein the trigger and safety lock are resiliently biased to return to an operable position following their operation, with the trigger and safety lock inoperable during their return, under the biasing force, to the operable position.
10. A system as claimed in claim 9, wherein the biasing of the trigger and safety lock effects a time delay, with the return to the operable position, following operation of the trigger and safety lock, taking a predetermined time.
11. A system as claimed in claim 3, wherein the bracket actuation means comprises a dispensing head on the bottle, which is fluidly connected to the outlet, a receptacle of the second receptacle type being arranged to engage and actuate the dispensing head, and the dispensing head being arranged to engage and actuate the valve, such that engagement and actuation of the dispensing head by the receptacle, when the bottle is in the bracket mode, dispenses fluid to the receptacle.
12. A system as claimed in claim 11, wherein the bracket actuation means further comprises a resiliently biased bottle support, a resiliently biased actuation button and a receptacle support, each of which is provided on the bracket, the bottle support is arranged to support the bottle, such that it may travel vertically up and down, the actuation button is arranged to effect the downward travel of the bottle, and the receptacle support is arranged to receive and guide the receptacle, such that when the receptacle is received by the receptacle support and the actuation button is actuated, the dispensing head is brought to bear on the receptacle and the fluid is dispensed to the receptacle.
13. A system as claimed in claim 11, wherein the receptacle is provided with a collar that, in use, abuts the dispensing head and limits the vertical travel of the dispensing head, such that the volume of fluid dispensed is dependent on the height of the collar.
14. A system as claimed in claim 13, wherein a range of collars of different heights are provided, such that a range of predetermined volumes of fluid may be dispensed.
15. A system as claimed in claim 12, wherein the bottle support and actuation button are resiliency biased to return to an operable position following their operation, with the bottle support and actuation button inoperable during their return, under the biasing force, to the operable position.
16. A system as claimed in claim 15, wherein the biasing of the bottle support and actuation button effects a time delay, with the return to the operable position, following operation of the bottle support and actuation button, taking a predetermined time.
17. A system as claimed in claim 1, wherein the bottle is refillable and is provided with a filling cap that is provided with a microbiological filter.
18. A system as claimed in claim 1, wherein the bracket is arranged to be mounted on a wall or on a re-locatable cleaning trolley or similar.
19. A system substantially as hereinbefore described with reference to, and as illustrated by, the accompanying drawings.
20. (canceled)
21. (canceled)
22. (canceled)

What is claimed is:

1. Engineered tissue comprising a suspension of anticoagulated plasma, a clotting agent and cells.
2. An engineered tissue as described in claim 1, wherein the cells are stem cells.
3. An engineered tissue as described in claim 2, wherein the stem cells are committed stem cells.
4. An engineered tissue as described in claim 2, wherein the suspension further comprises differentiation inducers.
5. An engineered tissue described in claim 1, wherein the engineered tissue has a predetermined shape and the suspension has substantially the same predetermined shape.
6. A method of manufacturing an engineered tissue comprising mixing cells with anticoagulated plasma and a clotting agent to form a suspension.
7. The method described in claim 6, wherein the cells are stem cells.
8. The method described in claim 7, wherein the stem cells are committed stem cells.
9. The method described in claim 7, wherein the step of mixing cells with anticoagulated plasma and a clotting agent further comprises mixing in differentiation inducers.
10. The method described in claim 7, further comprising the preliminary step of providing a mold defining a predetermined shape and then mixing the suspension inside the mold.
11. An extracellular matrix for promoting cell growth comprising a suspension of anticoagulated plasma and a clotting agent.
12. An extracellular matrix as described in claim 11, wherein the suspension further comprises preselected DNA.
13. A method of manufacturing an extracellular matrix for promoting cell growth comprising mixing anticoagulated plasma and a clotting agent to form a suspension.
14. A method of manufacturing an extracellular matrix having a predetermined shape, the method comprising:
preselecting a mold adapted to make the predetermined shape, and
filling the mold with a mixture of anticoagulated plasma, a clotting agent and cells.
15. A method for testing the effectiveness of cancer therapy treatments in vitro comprising:
manufacturing engineered tissue comprising anticoagulated plasma, a clotting agent and cancer cells;
preparing a plurality of samples of the engineered tissue;
subjecting a plurality of cancer therapy treatments to a respective plurality of samples of engineered tissue; and
evaluating the relative effectiveness of the cancer therapy treatment agents.
16. The method as described in claim 15, wherein the cancer cells are obtained from a patient who is in need of cancer therapy treatments.
17. An engineered tissue as described in claim 1, further comprising preselected DNA.
18. An engineered tissue as described in claim 17, wherein the preselected DNA is incorporated into the cells.
19. An engineered tissue as described in claim 18, wherein the preselected DNA is incorporated into the cells by using nonviral techniques.
20. The method described in claim 6 further comprising the step of adding sufficient fibrinolytic inhibitors at the time of mixture to prevent degradation of the resulting fibrin matrix before about two days.
21. The method described in claim 6, wherein the anticoagulated plasma contains a sufficient concentration of anticoagulates to prevent the resulting fibrin matrix formation from being compete until more than ten seconds after the mixture of anticoagulated plasma, clotting agent, and cells.
22. The method described in claim 6, further wherein the clotting agents have a low enough concentration to prevent the resulting fibrin matrix formation from being complete until more than ten seconds after the mixture of anticoagulated plasma, clotting agent, and cells.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 4.0 V or less when a forward current applied to the element is 20 mA.
2. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 4.5 V or less when a forward current applied to the element is 60 mA.
3. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 5.0 V or less when a forward current applied to the element is 120 mA.
4. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 5.5 V or less when a forward current applied to the element is 200 mA.
5. A semiconductor light emitting element comprising:
an n-type conductive m-plane GaN substrate;
a light emitting structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate; and
an n-side ohmic electrode formed on a rear face, said rear face polished with an acidic CMP slurry, of the m-plane GaN substrate,
wherein a forward voltage is 6.0 V or less when a forward current applied to the element is 350 mA.
6. The semiconductor light emitting element according to claim 1,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
7. The semiconductor light emitting element according to claim 1,
wherein the semiconductor light emitting element is a light emitting diode element.
8. The semiconductor light emitting element according to claim 1, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
9. The semiconductor light emitting element according to claim 8, wherein an area of the n-side ohmic electrode is 0.0012 cm2 or more, and equal to or less than the area of the rear face of the m-plane GaN substrate.
10. The semiconductor light emitting element according to claim 2,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
11. The semiconductor light emitting element according to claim 2,
wherein the semiconductor light emitting element is a light emitting diode element.
12. The semiconductor light emitting element according to claim 2, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
13. The semiconductor light emitting element according to claim 3,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
14. The semiconductor light emitting element according to claim 3,
wherein the semiconductor light emitting element is a light emitting diode element.
15. The semiconductor light emitting element according to claim 3, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
16. The semiconductor light emitting element according to claim 4,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
17. The semiconductor light emitting element according to claim 4,
wherein the semiconductor light emitting element is a light emitting diode element.
18. The semiconductor light emitting element according to claim 4, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
19. The semiconductor light emitting element according to claim 5,
wherein the light emitting structure comprises an active layer formed of a GaN-based semiconductor, an n-type GaN-based semiconductor layer disposed between the active layer and the m-plane GaN substrate, and a p-type GaN-based semiconductor layer which sandwiches the active layer with the n-type GaN based semiconductor layer.
20. The semiconductor light emitting element according to claim 5,
wherein the semiconductor light emitting element is a light emitting diode element.
21. The semiconductor light emitting element according to claim 5, wherein an area of the rear face of the m-plane GaN substrate is 0.0012 cm2 or more.
22. The semiconductor light emitting element according to claim 1, wherein the n-side ohmic electrode has a layered structure comprising a first portion which contacts the substrate formed of at least one metal selected from the group consisting of Ti, Cr, V, W, or ITO, and a second portion which is formed of at least one metal selected from the group consisting of Au, Cu or Ag.