All The Claims

1. An interface on a luminaire for a thermal protector case, the interface comprising:
a housing wall of the luminaire; and
at least one thermal protector case coupling feature disposed on a surface of the housing wall, wherein the at least one thermal protector case coupling feature is configured to receive at least one housing coupling feature of the thermal protector case,
wherein the thermal protector case encases a thermally-sensitive device disposed within the luminaire, and
wherein the at least one thermal protector case coupling feature forms an air-tight seal with the at least one housing coupling feature when the at least one housing coupling feature is disposed therein.
2. The interface of claim 1, wherein the at least one thermal protector case coupling feature is disposed on an inner surface of the housing wall.
3. The interface of claim 2, wherein at least a portion of the at least one thermal protector case coupling feature is visible from outside the housing wall when the at least one housing coupling feature of the thermal protector case is decoupled from the at least one thermal protector case coupling feature.
4. The interface of claim 2, wherein at least a portion of the at least one housing coupling feature is visible from outside the housing wall when the at least one housing coupling feature of the thermal protector case is coupled to the at least one thermal protector case coupling feature.
5. The interface of claim 1, wherein the at least one thermal protector case coupling feature is formed by stamping a portion of the housing wall.
6. The interface of claim 1, wherein the at least one thermal protector case coupling feature is configured to complement the at least one housing coupling feature of the thermal protector case.
7. The interface of claim 6, wherein the at least one thermal protector case coupling feature comprises a slot, and wherein the at least one housing coupling feature comprises a tab.
8. The interface of claim 1, wherein the thermal protector case comprises a body that is flexible.
9. An interface on a luminaire for a luminaire component, the interface comprising:
a housing wall of the luminaire; and
at least one luminaire component coupling feature disposed on a surface of the housing wall, wherein the at least one luminaire component coupling feature includes at least one aperture and is configured to receive at least one housing coupling feature of the luminaire component,
wherein the at least one luminaire component coupling feature forms an air-tight seal with the at least one housing coupling feature when the at least one housing coupling feature is disposed therein.
10. The interface of claim 9, wherein at least a portion of the at least one luminaire component coupling feature is visible from inside the housing wall when the at least one housing coupling feature of the luminaire component is coupled to the at least one luminaire component coupling feature.
11. The interface of claim 9, wherein at least a portion of the at least one housing coupling feature is visible from outside the housing wall when the at least one housing coupling feature of the luminaire component is coupled to the at least one luminaire component coupling feature.
12. The interface of claim 9, wherein the at least one luminaire component coupling feature is formed by stamping a portion of the housing wall.
13. The interface of claim 9, wherein the at least one luminaire component coupling feature is configured to complement the at least one housing coupling feature of the luminaire component.
14. The interface of claim 13, wherein the at least one luminaire component coupling feature comprises a slot, and wherein the at least one housing coupling feature comprises a tab.
15. The interface of claim 9, wherein the luminaire component comprises a body that is flexible.
16. A seal receiving portion for a luminaire, comprising:
a frame comprising:
a first side wall disposed along at least a portion of an inner perimeter that forms a cavity, wherein the cavity is configured to receive a housing of the luminaire;
a top wall disposed adjacent to at least a portion of the first side wall; and
a second side wall disposed adjacent to at least a portion of the top wall,
wherein the first side wall, the top wall, and the second side wall form a channel that is configured to receive a sealing member.
17. The seal receiving portion of claim 16, wherein the sealing member comprises an elastomeric material.
18. The seal receiving portion of claim 16, wherein the frame further comprises a protruding member that is disposed within a second section of the sealing member, wherein the channel receives a first section of the sealing member.
19. The seal receiving portion of claim 16, further comprising:
a coupling feature of the housing, wherein the coupling feature abuts against a second section of the sealing member when the housing is disposed in the cavity, wherein the coupling feature applies a compressive force to the second section of the sealing member, and wherein the channel receives a first section of the sealing member.
20. The seal receiving portion of claim 16, wherein the channel and the cavity have a substantially similar shape relative to each other.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for treating liquid from a source to reduce perchlorate concentration in the liquid, comprising:
supplying inlet liquid from a liquid source, the liquid having a first perchlorate concentration,
delivering a liquid into a bioreactor having a cavity and at least one inlet and at least one outlet opening connecting to the cavity, the bioreactor having a packed media comprising a plurality of granules of electron donor material and pieces of mollusk shell buffer material having at least 90% calcium carbonate by weight, positioned in the bioreactor cavity such that a liquid passing through the bioreactor cavity makes fluid contact with the media and such that the pieces of mollusk shell material are in fluid communication with the granules of electron donor material, the media being seeded with a sludge containing bacteria,
forming a treated liquid having a second perchlorate concentration less than the first, and
passing the treated liquid out of the bioreactor outlet opening.
2. The method of claim 1, further comprising, after the step of passing the treated liquid out of the bioreactor outlet opening,
post-treating the treated liquid by substantially filtering biocells with a sand filter.
3. A method of treating water from a water source to reduce perchlorate concentration in the water, comprising:
supplying inlet water from a water source, the water having a first perchlorate concentration,
optionally using a pretreatment system having at least one inlet and at least one outlet,
providing a bioreactor having an interior cavity and at least one inlet and at least one outlet opening,
connecting the outlet of the said optional pretreatment system to the inlet of the bioreactor,
using a media comprising sulfur granules and mollusk shell pieces forming a packed bed in the bioreactor interior cavity such that water passing through the bioreactor cavity makes fluid contact with the media, the media being seeded with a sludge containing bacteria,
configuring the optional pretreatment system, bioreactor, and the inlet opening and the outlet opening to enable water to pass through the pretreatment system into the bioreactor cavity in such manner that the water makes fluid contact with the media and subsequently exit from the bioreactor, and
optionally passing the water having a first perchlorate concentration from the water source into the pretreatment system to form pretreated water having a perchlorate concentration,
passing the optionally pretreated water having a perchlorate concentration into the bioreactor to come into fluid contact with the media and thereby forming treated water having a second perchlorate concentration less than the first concentration, and
passing the treated water out of the bioreactor outlet opening as outlet water.
4. The method of claim 3 wherein the step of passing water having a first perchlorate concentration into the optional pretreatment system to form pretreated water includes substantially removing at least one of particulate matter or litter material from the inlet water.
5. The method of claim 3, further comprising,
supplying inlet water from a catchment, a holding tank, an industrial wastewater stream or other waste water source,
using a media in the bioreactor comprising at least a volume of sulfur granules and at least a volume of mollusk shell pieces, wherein the sulfur granules comprise pellets, nuggets, blocks and particles of elemental sulfur not less than 2 mm in diameter and the volume ratio of sulfur granules to mollusk shell pieces in the bioreactor is in the range of 250% to 350%,
seeding the media with sludge containing a plurality of living micro-organisms comprising at least one of a species of perchlorate-reducing bacteria that grows on sulfur and respires on perchlorate,
moving the water within the bioreactor in a direction of primary flow during treatment at a flow rate greater than 0.2 Lhr,
receiving the treated water from the bioreactor into at least one outlet pipe to create outlet water, and
improving the quality of the outlet water relative to the quality of pretreated water.
6. The method of claim 5 wherein the step of seeding the media with sludge includes seeding with sludge containing at least one member of the \u03b2-proteobacteria or \u03b1-proteobacteria.
7. The method of claim 1, further comprising
providing a recycling pump and recycling pipe between the bioreactor outlet opening and the bioreactor inlet,
optionally recirculating the water in the bioreactor system at a recirculation flow rate, which rate is the lesser of about 9.7 cmmm or about 52 times the influent flow rate.
8. The method of claim 3, further comprising:
using a backwash system comprising a backwash inlet pipe entering the bioreactor interior cavity, a backwash outlet pipe exiting the bioreactor interior cavity and a backwash pump, the using step including:
introducing backwash water from a source to the backwash inlet pipe,
activating the backwash pump to pump the backwash water through the media, backwashing at a pressure in the range of 60 to 180 PSI, preferably 80-100 PSI,
receiving backwash water that has passed through the media, and
releasing backwash water from the bioreactor through the backwash outlet pipe.
9. The method of claim 3, further comprising:
improving the quality of the outlet water relative to the quality of the inlet water by producing outlet water that has substantially lower concentration of perchlorate.
10. The method of claim 1, further comprising
improving the quality of the outlet water relative to the quality of pretreated water by producing outlet water that has substantially lower concentration of perchlorate.
11. The method of claim 3, further comprising
producing outlet water that has, on average, a perchlorate concentration less than 10.0% of the perchlorate concentration of the inlet water.
12. The method of claim 3, further comprising:
using a media buffering material wherein water placed in fluid contact with the media buffering material, upon addition of an acid titrant of 2.5 milli-equivalents per liter of H+ ions sufficient to shift the pH of the water from a starting pH value Y to a new pH of 3.0, recovers 68% of its starting pH value, that is, 68% x Y, within 140 minutes.
13. The method of claim 8, further comprising
periodically activating the backwash pump to pump the backwash water through the media in a direction opposite to the direction of primary flow during treatment.
14. The method of claim 10, wherein the outlet water has, on average, a perchlorate concentration less than 0.5 mgL.
15. The method of claim 3, wherein the step of passing the optionally pretreated water into the bioreactor to come into fluid contact with the media and thereby form a treated water further comprises,
delivering the optionally pretreated water without aeration inside the bioreactor and the fluid contact between the liquid and the media is substantially anoxic.
16. The method of claim 5 wherein the bacteria colonize upon the sulfur granules and upon the mollusk shell pieces.
17. The method of claim 3 wherein the water contacts the media for a period in the range of about 8 to 40 hours.
18. The method of claim 3, further comprising, prior to the step of using a media,
forming the media including mollusk shell pieces that are crushed, unmodified mollusk shell pieces, and
sterilizing the crushed, unmodified mollusk shells prior to providing the media.
19. The method of claim 3, further comprising using the oyster shell pieces to control alkalinity.
20. The method of claim 3, wherein prior to the step of using the media forming the media comprising crushed, unmodified oyster shells obtained through a source of crushed oyster for poultry farming or is a source of industrial bi-product oyster shells.
21. The method of claim 8, wherein backwashing is conducted not more than once every six months.
22. The method of claim 3, further comprising
producing outlet water that has, on average, a perchlorate concentration less than 2% of the perchlorate concentration of the inlet water.
23. The method of claim 22, further comprising maintaining the produced outlet water at less than 2% concentration of the perchlorate concentration of the inlet water after at least 100 days of operation.
24. The method of claim 22, wherein a flow in the bioreactor is recirculated at a 9.7 cmmm recirculation velocity.
25. The method of claim 11, wherein an empty bed contact time is less than 40 hours.
26. The method of claim 11, further comprising maintaining the produced outlet water at less than 10% concentration of perchlorate in the inlet water after at least 260 days of operation without recirculation and with an empty bed contact time less than 15 hours.
27. The method of claim 3, further comprising
using granules of electron donor material in the bioreactor cavity that are elemental sulfur and comprise a plurality of one or more of sulfur pellets, sulfur nuggets, sulfur blocks and sulfur particles, wherein the pellets, nuggets, blocks or particles are in the range of about 0.15-10 mm, and
using pieces of calcium carbonate material in the bioreactor cavity, the pieces of material comprising oyster shell pieces, wherein a total volume in the bioreactor filled by the elemental sulfur is approximately three times greater than a total volume filled by the oyster shell pieces.
28. The method of claim 27, wherein the media is seeded with a sludge containing sulfur-utilizing, perchlorate reducing bacteria includes seeding with a sludge containing at least one of a bacteria species that is a member of the \u03b2-proteobacteria or \u03b1-proteobacteria.
29. The method of claim 3, wherein the step of using the media further comprises using calcium carbonate material having at least 90% calcium carbonate by weight in the form of aragonite.
30. The method of claim 1, further comprising
producing outlet water that has, on average, a perchlorate concentration less than 10.0% of the perchlorate concentration of the inlet water.
31. The method of claim 1, further comprising, prior to the step of supplying inlet liquid,
processing mollusk shell pieces wherein the mollusk shell pieces comprise crushed, unmodified mollusk shell pieces by sterilizing the crushed, unmodified mollusk shells prior to packing the reactor cavity.
32. The method of claim 1 wherein the packed media comprises a layer of the granules of electron donor material and a layer of the mollusk shell material.
33. The method of claim 1 further comprising providing fluid communication between the bioreactor cavity and an ion-exchange reactor.
34. The method of claim 1 further comprising passing a treated liquid having a perchlorate concentration of less than 4 micrograms per liter.
35. The method of claim 1 further comprising forming the treated liquid in the bioreactor cavity without aeration.
36. The method of claim 1 further comprising using a proteobacteria in the bioreactor for perchlorate reduction.

1. A support stand assembly comprising:
a base;
a stopper rotatably disposed in the base;
a guiding member engaged with the stopper and movably disposed in the base;
a resilient member disposed between the guiding member and the base;
a connecting member abutting the guiding member and movably disposed in the base; and
a supporting member pivotally connected with the connecting member and movably disposed on the base.
2. The support stand assembly of claim 1, wherein the base comprises a first main body, a first receiving space being defined in the first main body, the connecting member and the supporting member being movably disposed on the bottom of the first receiving space.
3. The support stand assembly of claim 2, wherein the base further comprises a connecting portion, the connecting portion extending from the first main body along a direction substantially perpendicular to the first main body, a second receiving space being defined in the connecting portion, the stopper being rotatably being disposed on the bottom of the second receiving space.
4. The support stand assembly of claim 3, further comprising a liner received in the second receiving space of the connecting portion, wherein a third receiving space is defined on the liner, a first through hole being disposed on the bottom of the third receiving space, four latching notches being defined in the sidewall of the first through hole, the stopper comprising a first cam with a latching protrusion, the latching protrusion of the first cam latching with the latching notches when rotated in one direction.
5. The support stand assembly of claim 4, wherein the four latching notches are evenly spaced from each other.
6. The support stand assembly of claim 4, wherein the stopper further comprises a shaft, the shaft being matched with the first cam and capable of rotating.
7. The support stand assembly of claim 6, wherein the stopper further comprises an elastic member, the elastic member being sleeved around the shaft.
8. The support stand assembly of claim 7, wherein the elastic member is a spring.
9. The support stand assembly of claim 7, wherein the stopper further comprises a gear, the gear being movably connected to the shaft above the elastic member.
10. The support stand assembly of claim 4, wherein the guiding member comprises a second main body, a first resisting portion, and a positioning portion, the second main body comprising a first surface and a second surface opposite the first surface, the positioning portion being disposed on an end of the first surface of the second main body, the first resisting portion extending from an end of the second surface of the second main body along a direction substantially perpendicular to the second surface.
11. The support stand assembly of claim 10, wherein the second main body comprises a rack and a supporting board, the rack comprising a number of teeth, the length of each tooth diminishing gradually in a direction away from the positioning portion of the guiding member, the supporting board comprising an inclined plane facing the rack, the gradient of the inclined plane diminishing gradually in the direction away from the positioning portion of the guiding member correspondingly to the gradient of the rack.
12. The support stand assembly of claim 11, wherein the second main body further comprises a stopping block, the stopping block being disposed over the rack and extended from the first surface of the second main body along a direction substantially perpendicular to the first surface.
13. The support stand assembly of claim 10, wherein the first receiving space and the second receiving space share a common first sidewall, a first cutout being defined in the first sidewall, a second cutout being defined in a third sidewall of the third receiving space corresponding to the first cutout, the third sidewall of the third receiving space being closed to the first sidewall.
14. The support stand assembly of claim 13, wherein the first cutout comprises a first supporting surface parallel to the bottom of the second receiving space, the second cutout comprising a second supporting surface corresponding to the first supporting surface, the first resisting portion comprising a resisting block and a sliding block, the resisting block comprising a surface facing the first supporting surface of the first cutout, the sliding block being extended from the surface of the resisting block along a direction substantially perpendicular to the surface and placed on the first supporting surface of the first cutout and the second supporting surface of the second cutout, the resisting block being received in the third receiving space and extended into the first receiving space of the first main body.
15. The support stand assembly of claim 14, wherein the connecting member comprises a second resisting portion and two arms, the second resisting portion abutting against the resisting block of the first resisting portion, the arms being disposed on two opposite side of an end portions of the second resisting portion, the arms and the second resisting portion cooperatively forming an h shape.
16. The support stand assembly of claim 15, wherein the connecting member further comprises a pivot, two second through holes being defined in the arms corresponding to the pivot, the supporting member comprising a pressing portion and a twisting portion away from the pressing portion, the twisting portion defining a third through hole corresponding to the pivot, the connecting member being pivotally connected to the supporting member via the pivot being extended through the second through holes and the third through hole.
17. The support stand assembly of claim 10, wherein the positioning portion comprises a side panel and a post, the side panel being disposed on the second surface of the second main body and extended from an end of the second surface along a direction substantially perpendicular to the second surface, the side panel comprising a surface facing the first recess, the post being disposed on the surface of the side panel and extended from the surface along a direction substantially perpendicular to the surface and near the resisting portion, the resilient member being sleeved around the post.
18. The support stand assembly of claim 17, wherein the first main body comprises an end portion away from the connecting portion, the second receiving space comprising a second sidewall adjacent to the first sidewall of the second receiving space and away from the end portion of the first main body, a first recess being defined in the third sidewall of the second receiving space, the third receiving space comprising a fourth sidewall adjacent to the third sidewall of the third receiving space, a second recess being defined in the fourth sidewall of the second receiving space corresponding to the first recess, the post being matched with the first and second recesses and projected from the first and second recesses.
19. The support stand assembly of claim 17, wherein the side panel is integrally formed with the second main body.
20. A digital photo frame comprising:
A housing defining an opening; and
a support stand assembly received in the opening of the housing comprising:
a base;
a stopper rotatably disposed in the base;
a guiding member engaged with the stopper and movably disposed in the base;
a resilient member disposed between the guiding member and the base;
a connecting member abutted against the guiding member and movably disposed on the base; and
a supporting member pivotally connected with the connecting member and movably disposed on the base.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of fabricating a phase change memory device, comprising:
preparing a semiconductor substrate of a first conductivity type;
forming a first interlayer insulating layer on the semiconductor substrate;
patterning the first interlayer insulating layer to form a plurality of diode holes in the first interlayer insulating layer;
forming first semiconductor Patterns in lower regions of the diode holes;
forming second semiconductor patterns on the first semiconductor patterns;
forming cell electrodes on the second semiconductor patterns;
forming insulating contact spacers in the diode holes, wherein the insulating contact spacers are formed on sidewalls of the diode holes and on the cell electrodes;
forming lower electrodes in the diode holes, wherein the lower electrodes are formed on the insulating contact spacers and on the cell electrodes and wherein top surfaces of the lower electrodes are lower than a top surface of the first interlayer insulating layer and higher than a bottom surface of the first interlayer insulating layer;
forming phase change material patterns filling the diode holes, wherein the phase change material patterns are formed on the cell electrodes and on the insulating contact spacers, wherein the phase change material patterns extend over the top surface of the first interlayer insulating layer; and
forming upper electrodes on the phase change material pattern,
wherein the first semiconductor patterns are formed to have the first conductivity type or a second conductivity type different from the first conductivity type, and the second semiconductor patterns are formed to have the first conductivity type,
wherein forming the first and second semiconductor patterns comprises:
forming recessed semiconductor patterns filling lower regions in the diode holes;
doping lower regions of the recessed semiconductor patterns with impurities of the first conductivity type or impurities of the second conductivity type; and
doping upper regions of the recessed semiconductor patterns with impurities of the first conductivity type, and
wherein forming the recessed semiconductor patterns comprises:
forming a single crystalline semiconductor layer filling the diode holes using a selective epitaxial growth technique;
planarizing the single crystalline semiconductor layer to form single crystalline semiconductor patterns with flat top surfaces having the same level as a top surface of the first interlayer insulating layer; and
after forming the single crystalline semiconductor patterns, partially etching the single crystalline semiconductor patterns to recess the single crystalline semiconductor patterns.
2. The method according to claim 1, wherein the first interlayer insulating layer is formed of a single layer of insulating material.
3. The method according to claim 1, wherein the cell electrodes are formed of a metal silicide layer.
4. The method according to claim 3, wherein the metal silicide layer is formed using a salicide technique.
5. The method according to claim 3, wherein the metal silicide layer is a cobalt silicide layer, a nickel silicide layer, or a titanium silicide layer.
6. The method according to claim 1, wherein forming the insulating contact spacers comprises forming the insulating contact spacers prior to forming the phase change material patterns and the upper electrodes.
7. The method according to claim 6, wherein forming the lower electrodes comprises forming the lower electrodes on the cell electrodes exposed by the insulating contact spacers prior to forming the phase change material patterns and the upper electrodes.
8. The method according to claim 7, wherein forming the lower electrodes comprises:
forming a conductive layer on the semiconductor substrate having the insulating contact spacers formed thereon; and
etching back the conductive layer to form conductive layer patterns remaining on the cell electrodes.
9. The method according to claim 8, wherein the conductive layer is formed of a titanium nitride layer or a titanium aluminum nitride layer.
10. The method according to claim 1, wherein forming the phase change material patterns and the upper electrodes comprises:
sequentially forming a phase change material layer and an upper electrode layer on the semiconductor substrate having the cell electrodes formed thereon; and
patterning the upper electrode layer and the phase change material layer.
11. The method according to claim 10, wherein the phase change material layer is formed of a chalcogenide layer, and the upper electrode layer is formed of a titanium nitride layer or a titanium aluminum nitride layer.
12. The method according to claim 1, further comprising:
forming a second interlayer insulating layer on the semiconductor substrate having the upper electrodes formed thereon;
patterning the second interlayer insulating layer to form bit line contact holes exposing the upper electrodes; and
forming a plurality of parallel bit lines on the second interlayer insulating layer, wherein the bit lines are electrically connected to the upper electrodes through the bit line contact holes.