All The Claims

What is claimed is:

1. A process for making a semiconductor color image sensor cell while protecting a surface of a fixed contact, the method comprising:
defining a fixed contact by etching a passivation layer and stopping on an anti-reflecting layer so as to form a hole for an opening of the fixed contact;
forming at least one colored filter element on a region of the passivation layer, whereby the anti-reflecting layer acts as a protection layer for a surface of the fixed contact;
depositing a planarizing resin layer so as to cover the colored filter elements;
forming micro-lenses on the planarizing resin layer above the colored filter elements; and
etching the anti-reflecting layer to open the fixed contact.
2. The process according to claim 1, wherein the forming at least one colored filter elements includes forming three colored filter elements formed in succession on the passivation layer.
3. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a first colored filter element of the three colored filter elements which is a green filter element formed by application of a first layer of colored resin and definition of a pattern in the first layer by exposure and photolithographic development.
4. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a second colored filter element of the three colored filter elements which is a blue filter element formed by application of a second layer of colored resin and definition of a pattern in the second layer by exposure and photolithographic development.
5. The process according to claim 2, wherein the forming at least one colored filter elements includes forming a third colored filter element of the three colored filter elements which is a red filter element formed by application of a third layer of colored resin and definition of a pattern in the third layer by exposure and photolithographic development.
6. The process according to claim 1, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
7. The process according to claim 2, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
8. The process according to claim 3, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
9. The process according to claim 4, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
10. The process according to claim 5, wherein the forming micro-lenses includes deposition of a resin layer, an exposure and a photolithographic development of the resin layer so as to obtain resin fixed contacts located immediately above the colored filter elements, and baking in order to make the fixed contacts convex to form the micro-lenses.
11. The process according to claim 1, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
12. The process according to claim 2, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
13. The process according to claim 3, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
14. The process according to claim 4, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
15. The process according to claim 5, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
16. The process according to claim 10, wherein in the defining a fixed contact includes defining a fixed contact of aluminum.
17. The process according to claim 1, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
18. The process according to claim 2, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
19. The process according to claim 3, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
20. The process according to claim 4, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
21. The process according to claim 5, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.
22. The process according to claim 15, wherein the defining a fixed contact by etching a passivation layer and stopping on the anti-reflecting layer includes an anti-reflecting layer made of titanium nitride.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A crystalline material with LTA structure of zeolitic nature that in its calcined and anhydrous state, and in the absence of defects in its crystalline lattice has the following empirical formula: x(M1nXO2):z ZO2:y GeO2:(1\u2212y) SiO2 where M is H+ or at least one +n charged inorganic cation; X is at least one chemical element in +3 oxidation state; Z is at least one cation in an oxidation state of +4 different from Si and Ge; wherein x has a value between 0 and 0.15, y has a value between 0 and 1, and z has a value between 0 and 0.1.
2. A crystalline material according to claim 1, wherein it has been prepared from a reaction mixture that has at least a 4-methyl-2,3,6,7,-tetrahydro-1H,5H-pyrido 3,2,1-ij quinolinium cation as an organic compound source.
3. A crystalline material according to claim 1, wherein in the state just as synthesized, the X-ray diffraction pattern, as measured by a fixed divergence slit and using the Ka-Cu radiation, is as follows:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
mf
8.48
m
6.92
100
5.99
md
3.99
f
3.61
d
3.32
md
3.20
md
2.90
md
2.55
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; m is a medium relative intensity that corresponds to 40-60% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
4. A crystalline material according to claim 1, wherein in its calcined and anhydrous state its x-ray diffraction pattern is:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
100
8.47
f
6.91
d
5.35
md
3.98
md
3.60
md
3.31
md
3.19
md
2.90
md
2.54
md
where, f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
5. A crystalline material according to claim 1 wherein Z is selected from the group consisting of Ti and Sn.
6. A crystalline material according to claim 5, wherein in its calcined and anhydrous state its x-ray diffraction pattern is:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
100
8.47
f
6.91
d
5.35
md
3.98
md
3.60
md
3.31
md
3.19
md
2.90
md
2.54
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; m is a medium relative intensity that corresponds to 40-60% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
7. A procedure to synthesize the microporous crystalline material of claim 5 in which a reaction mixture contains a source of SiO2, optionally, a source of GeO2, optionally, a source of one or several tetravalent elements Z different from Si and Ge, at least one source of the organic compound R, a source of fluoride, and water, is heated at a temperature between 80 and 200\xb0 C., until crystallization is achieved, wherein the reaction mixture has a composition, in terms of molar relationships between the following ranges:
R(SiO2 + GeO2):
0.05-1.0\u2002
ZO2(SiO2 + GeO2):
\u2002\u20090-1.0
GeO2(SiO2 + GeO2):
\u2002\u20090-1.0
F(SiO2 + GeO2):
0.1-3.0
H2O(SiO2 + GeO2):
\u2002\u20091-50.
8. A procedure according to claim 7 wherein Z is Ti or Sn.
9. A procedure according to claim 7 wherein R is 4-methyl-2,3,6,7,-tetrahydro -1H,5H-pyrido 3,2,1-ij quinolinium cation or a mixture of said cation with the tetramethylammonium cation or with ethylenglycol.
10. A procedure according to claim 7 wherein the temperature is between 100\xb0 and 200\xb0 C.
11. A crystalline material according to claim 1, wherein in the state just as synthesized, the X-ray diffraction pattern, as measured by a fixed divergence slit and using the Ka-Cu radiation, is as follows:
d (\u212b) \xb1 0.4
I (I * 100I0)
12.00
mf
8.48
m
6.92
100
5.99
md
3.99
f
3.61
d
3.32
md
3.20
md
2.90
md
2.55
md
where mf is a very strong relative intensity that corresponds to 99-80% of the peak of greatest intensity; f is a strong relative intensity that corresponds to 60-80% of the peak of greatest intensity; d is a weak relative intensity that corresponds to 20-40% of the peak of greatest intensity; md is a very weak relative intensity that corresponds to less than 20% of the peak of greatest intensity.
12. A procedure to synthesize the microporous crystalline material of claim 1, in which a reaction mixture that contains a source of SiO2, optionally, a source of GeO2, optionally, a source of one or more of several trivalent elements X, optionally, a source of +n inorganic cations M, at least one source of organic compound R, a source of fluoride, and water, is heated at a temperature between 80 and 200\xb0 C., until crystallization is achieved, wherein the reaction mixture has a composition, in terms of molar relationships between the following ranges:
R(SiO2 + GeO2):
0.05-1.0\u2002
M1nOH(SiO2 + GeO2):
\u2002\u20090-1.0
X2O3(SiO2 + GeO2):
\u2002\u20090-1.0
GeO2(SiO2 + GeO2):
\u2002\u20090-1.0
F(SiO2 + GeO2):
0.1-3.0
H2O(SiO2 + GeO2):
\u2002\u20091-50.
13. A procedure according to claim 12, wherein that a quantity of crystalline material is added to the reaction mixture as crystallization promoter, said quantity being up to 20% by weight in relation to the total of inorganic oxides added.
14. A procedure according to claim 12 wherein X is selected from the group consisting of Al, B, Ga and Fe.
15. A procedure according to claim 12 wherein R is 4-methyl-2,3,6,7,-tetrahydro -1H,5H-pyrido 3,2,1-ij quinolinium cation or a mixture of said cation with tetramethylammonium cation or with ethylenglycol.
16. A procedure according to claim 15, wherein the 4-methyl-2,3,6,7, -tetrahydro-1H,5 H-pyrido 3,2,1 -ij quinolinium and the tetramethylammonium organic cations are added as hydroxides or as salts, or as a mixture of both.
17. A procedure according to claim 16 wherein the organic cations are added as a halide.
18. A procedure according to claim 12 wherein the temperature is between 100\xb0 and 200\xb0 C.
19. A method to convert feedings formed by organic compounds in the presence of a catalyst comprising adding a catalytically active form of the material described in claim 1 as a catalyst.
20. A method to separate gases in the presence of an adsorbent comprising adding a catalytically active form of the material described in claim 1 as an adsorbent.
21. An adsorbent for gases and vapours comprising an active form of the material described in claim 1.
22. A crystalline material according to claim 1 wherein X is selected from the group consisting of Al, B, Ga and Fe.
23. A crystalline material according to claim 1 wherein y has a value lower than 0.75.
24. A crystalline material according to claim 1 wherein z has a value lower than 0.05.

1. A memory cell array, comprising:
a plurality of memory blocks, wherein each memory block comprises:
a plurality of bit lines and a plurality of word lines; and
a plurality of memory cells arranged at intersections between the plurality of bit lines and word lines;
wherein each bit line is connected to at least two memory cells adapted to store different numbers of bits from each other.
2. The memory cell array of claim 1, wherein each of the plurality of memory blocks comprises 2n pages, where n is an integer greater than or equal to 2.
3. The memory cell array of claim 1, wherein a particular memory block among the plurality of memory blocks contains a plurality of pages and the number of pages in the particular memory block is computed by summing a number of pages that can be accessed using each of the plurality of word lines in the particular memory block.
4. The memory cell array of claim 1, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to at least one memory cell adapted to store 2n bits of data, where n is an integer greater than or equal to zero.
5. The memory cell array of claim 1, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to a memory cell adapted to store a number of bits that is not a power of two.
6. The memory cell array of claim 1, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to at least one dummy cell.
7. The memory cell array of claim 1, wherein each bit line in a particular memory block among the plurality of memory blocks is coupled to 2n memory cells, where n is an integer greater than or equal to zero, and the number of pages in the particular memory block can be varied in accordance with a number of bits to be stored in each of the 2n memory cells.
8. The memory cell array of claim 1, wherein each of the plurality of memory blocks contains the same number and arrangement of memory cells, and respectively corresponding memory cells within each of the plurality of memory blocks are adapted to store the same number of bits.
9. The memory cell array of claim 1, wherein the plurality of memory cells are NAND flash memory cells.
10. The memory cell array of claim 1, wherein the plurality of memory cells in each memory block are arranged into a plurality of composite NAND strings each including at least two memory cells adapted to store different numbers of bits from each other;
wherein each of the composite NAND strings corresponds to one among the plurality of bit lines.
11. The memory cell array of claim 1, wherein the plurality of memory cells are NOR flash memory cells.
12. A flash memory device, comprising:
a page buffer circuit adapted to store data for read and write operations of the flash memory device; and
a memory cell array, comprising:
a plurality of memory blocks, wherein each memory block comprises:
a plurality of bit lines and a plurality of word lines; and
a plurality of memory cells arranged at intersections between the plurality of bit lines and word lines;
wherein each bit line is connected to at least two memory cells adapted to store different numbers of bits from each other.
13. The device of claim 12, wherein each of the plurality of memory blocks comprises 2n pages, where n is an integer greater than or equal to 2.
14. The device of claim 12, wherein a particular memory block among the plurality of memory blocks contains a plurality of pages and the number of pages in the particular memory block is computed by summing a number of pages that can be accessed using each of the plurality of word lines in the particular memory block.
15. The device of claim 12, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to at least one memory cell adapted to store 2n bits of data, where n is an integer greater than or equal to zero.
16. The device of claim 12, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to a memory cell adapted to store a number of bits that is not a power of two.
17. The device of claim 12, wherein one or more bit lines in one or more of the plurality of memory blocks is coupled to at least one dummy cell.
18. The device of claim 12, wherein each bit line in a particular memory block among the plurality of memory blocks is coupled to 2n memory cells, where n is an integer greater than or equal to zero, and the number of pages in the particular memory block can be varied in accordance with a number of bits to be stored in each of the 2n memory cells.
19. The device of claim 12, wherein each of the plurality of memory blocks contains the same number and arrangement of memory cells, and respectively corresponding memory cells within each of the plurality of memory blocks are adapted to store the same number of bits.
20. The device of claim 12, wherein the plurality of memory cells are NAND flash memory cells.
21. The device of claim 12, wherein the plurality of memory cells in each memory block are arranged into a plurality of composite NAND strings each including at least two memory cells adapted to store different numbers of bits from each other;
wherein each of the composite NAND strings corresponds to one among the plurality of bit lines.
22. The device of claim 12, wherein the plurality of memory cells are NOR flash memory cells.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method comprising:
activating a first grammar from among a plurality of independent grammars, the first grammar being identified with a first input category;
deactivating at least a second grammar from among the plurality of independent grammars;
inputting spoken data related to the first input category;
matching the spoken data to stored data within the first grammer; and
synchronizing a first-modality gateway and a second modality gateway, both gateways interfacing between a user and a server system, the synchronizing allowing either of the first-modality gateway or the second-modality gateway, at a given point in time, to interface with specific information in the server system,
wherein the specific information is a field identification command for identifying a first field within a form on a graphical user interface, the first field associated with the first input category.
2. The method of claim 1 in which the plurality of independent grammars define a first level of grammar that includes the first grammar and the second grammar, and wherein activating the first grammar comprises activating a second level of grammar that is independent from the plurality of independent grammars.
3. The method of claim 1 in which the plurality of independent grammars define a first level of grammar that includes the first grammar and the second grammar, and wherein deactivating the second grammar comprises deactivating all of the first-level grammars aside from the first grammar.
4. The method of claim 1 wherein the specific information is the stored data.
5. The method of claim 1 wherein synchronizing the first-modality gateway and the second-modality gateway comprises synchronizing a browser and a voice gateway, wherein the server system includes web pages.
6. The method of claim 5 wherein activating the first grammar is in response to the identifying the first field within the form.
7. The method of claim 1 wherein each of the plurality of independent grammars is stored separately.
8. The method of claim 1 wherein activating a first grammar comprises indicating to a user that the first grammar has been activated.
9. The method of claim 8 wherein indicating to the user comprises displaying a visual cue identifying a first field within a graphical user interface, the first field being associated with the first input category.
10. The method of claim 9 wherein the visual cue is automatically advanced to a second field upon the matching of the spoken data to the stored data within the first grammar.
11. The method of claim 9 wherein the visual cue is advanced to a second field, after the matching of the spoken data to the stored data within the first grammar, by inputting a field advancement voice command, wherein the field advancement voice command is matched against a global grammar that is active at a same time as with the first grammar.
12. The method of claim 9 wherein the graphical user interface comprises a web page.
13. The method of claim 8 wherein indicating to the user comprises aurally identifying the first input category to the user.
14. The method of claim 1 further comprising:
deactivating the first grammar;
activating the second grammar, the second grammar being identified with a second input category;
inputting secondary spoken data related to the second input category; and matching the secondary spoken data to secondary stored data within the second grammar.
15. The method of claim 1, further comprising:
activating a global grammar such that the first grammar and the global grammar are both active for a period of time;
inputting global spoken data that identifies a second input category from among a plurality of input categories;
matching the global spoken data to a portion of the global grammar; and
activating, in response to the matching of the global spoken data, the second grammar, the second grammar being identified with the second input category.
16. An apparatus comprising a storage medium having instructions stored thereon, the instructions including:
a first code segment for activating a first grammar associated with a first category;
a second code segment for activating a first data entry mechanism associated with the first category;
a third code segment for receiving first voice data;
a fourth codes segment for selecting a portion of the first grammar corresponding to the first voice data for input into the first data entry mechanism;
a fifth code segment for deactivating the first grammar;
a sixth code segment for activating a second grammar associated with a second category;
a seventh code segment for activating a second data entry mechanism associated with the second category;
an eighth code segment for receiving second voice data;
a ninth code segment for selecting a portion of the second grammar corresponding to the second voice data for input into the second data entry mechanism; and
a tenth code segment for synchronizing a first-modality gateway and a second modality gateway, both gateways interfacing between a user and a server system, the synchronizing allowing either of the first-modality gateway or the second-modality gateway, at a given point in time, to interface with specific information in the server system.
wherein the specific information is a field identification command for identifying a first field within a form on a graphical user interface, the first field associated with the first input category.
17. The method of claim 16 wherein the first data entry mechanism comprises a field in the graphical user interface.
18. The method of claim 17 wherein the second code segment is additionally for visually indicating the field.
19. The method of claim 17 wherein the graphical user interface comprises a web page.
20. The method of claim 16 wherein the first data entry mechanism comprises an audio recording.
21. The method of claim 16 wherein the sixth code segment is additionally for automatically activating the second grammar in response to the deactivating of the first grammar.
22. The method of claim 16 wherein the sixth code segment is additionally for inputting a second-grammar activation signal from the user.
23. The method of claim 22 wherein the second-grammar activation signal activates the second data entry mechanism associated with the second category for data entry.
24. The method of claim 22 wherein the second-grammar activation signal comprises third voice data.
25. The method of claim 24 further comprising an eleventh code segment for matching the third voice data against a portion of a third grammar, wherein the third grammar remains active regardless of whether the first grammar or the second grammar are activated.
26. The method of claim 24 wherein the second-grammar activation signal comprises a physical input.
27. A system comprising:
a first storage area operable to store a first grammar;
a second storage area operable to store a second grammar, the second grammar being independent from the first grammar;
a grammar activation and deactivation system operable to activate the first grammar and ensure that the second grammar is simultaneously inactive;
a voice-recognition system operable to input spoken data and match the spoken data against a corresponding portion of the first grammar;
an input indication system operable to indicate the corresponding portion of the first grammar to a user; and
a synchronization system operable to synchronize a first-modality gateway and a second modality gateway, both gateways interfacing between the user and a server system, the synchronization allows either of the first-modality gateway or the second-modality gateway, at a given point in time, to interface with specific information in the server system,
wherein the specific information is a field identification command for identifying a first field within a form on a graphical user interface, the first field associated with the first input category.
28. The system of claim 27, further comprising a third storage area operable to store a third grammar, the third grammar being independent from the first grammar and the second grammar and being operable to be activated by the activation and deactivation system so that the third grammar and the first grammar are both active for a period of time.
29. The system of claim 27, wherein the input indication system comprises a field within the graphical user interface operable to display the corresponding portion of the first grammar.
30. The system of claim 27 wherein the grammar activation and deactivation system is further operable to output a grammar identifier to the user that identifies which of the first grammar and second grammar is currently active.
31. The system of claim 30 wherein the grammar identifier comprises a visual cue identifying a first field or a second field within a graphical user interface, the first field and the second field being associated with the first grammar and the second grammar, respectively.