All The Claims

1. A method of manufacturing a semiconductor device comprising:
a semiconductor substrate preparation step of preparing a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed on a surface of the semiconductor substrate; and
a second semiconductor region forming step of forming a second semiconductor region by implanting an impurity of a second conductivity type into the first semiconductor region through multiple ion implantation steps from the surface of the semiconductor substrate while varying implantation depths of the respective multiple ion implantation steps, wherein
in the second semiconductor region forming step, an implantation depth in a first ion implantation step of the multiple ion implantation steps is the deepest among the multiple ion implantation steps,
in the second semiconductor region forming step, an implantation depth in a second ion implantation step of the multiple ion implantation steps is less deep than the implantation depth in the first ion implantation step,
in the second semiconductor region forming step, an implantation depth in a third ion implantation step of the multiple ion implantation steps is less deep than the implantation depth in the second ion implantation step,
in the second semiconductor region forming step, a dose amount of the impurity in the first ion implantation step is smaller than a dose amount of the impurity in the second ion implantation step,
and
in the second semiconductor region forming step, a dose amount of the impurity in the third ion implantation step is nearly equal to the dose amount of the impurity in the second ion implantation step.
2. The method of manufacturing the semiconductor device according to claim 1, wherein
in the second semiconductor region forming step, an implantation energy in the first ion implantation step is the largest among the multiple ion implantation steps,
in the second semiconductor region forming step, an implantation energy in the third ion implantation step of the multiple ion implantation steps is smaller than the implantation energy in the first ion implantation step, and
in the second semiconductor region forming step, the dose amount of the impurity in the first ion implantation step is smaller than a dose amount of the impurity in the third ion implantation step.
3. The method of manufacturing the semiconductor device according to claim 1, wherein
the dose amount of the impurity in the first ion implantation step is the smallest among the multiple ion implantation steps.
4. A method of manufacturing a semiconductor device comprising:
preparing a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed on a surface of the semiconductor substrate;
forming a second semiconductor region by implanting an impurity of a second conductivity type through multiple ion implantation steps from the surface of the semiconductor substrate into the first semiconductor region while varying implantation depths of the respective multiple ion implantation steps; and
reducing a dose amount of the impurity in a first ion implantation step of the multiple ion implantation steps with respect to a dose amount of the impurity in a second ion implantation step and with respect to a dose amount of the impurity in a third ion implantation step, of the multiple ion implantation steps, the dose amount of the impurity in the third ion implantation step being nearly equal to the dose amount of the impurity in the second ion implantation step, wherein
an implantation energy in the first ion implantation step is the largest among the multiple ion implantation steps,
an implantation energy in the second ion implantation step is less than the implantation energy in the first ion implantation step, and
an implantation energy in the third ion implantation step is less than the implantation energy in the second ion implantation step.
5. The method of manufacturing the semiconductor device according to claim 4, wherein
the dose amount of the impurity in the first ion implantation step is the smallest among the multiple ion implantation steps.
6. A semiconductor device comprising:
a semiconductor substrate made of SiC and including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type which is in contact with a top surface of the first semiconductor region, wherein
an impurity concentration of the second conductivity type in the second semiconductor region is reduced in a depth direction of the semiconductor substrate, and
in the depth direction of the semiconductor substrate, a length from a position in the second semiconductor region which corresponds to a predetermined impurity concentration of 1.0\xd71016 to 1.0\xd71017 cm\u22123 to a position in the second semiconductor region which corresponds to an impurity concentration which is 110 of the predetermined impurity concentration is 60 nm or less.
7. The semiconductor device according to claim 6, wherein
the second semiconductor region is arranged in a range facing the top surface of the semiconductor substrate,
the semiconductor substrate includes a drift region and a gate electrode,
the drift region is of the second conductivity type and located below the first semiconductor region while separated from the second semiconductor region by the first semiconductor region,
the gate electrode is arranged in a gate trench and is opposite to the first semiconductor region via insulating film in a range where the first semiconductor region separates the second semiconductor region and the drift region from each other, and
the gate trench extends to the drift region through the second semiconductor region and the first semiconductor region.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process for polymerizing one or more olefins comprising contacting an olefin monomer or monomers under polymerization conditions in the presence of a catalyst system comprising:
(A) an inert support;
(B) a metal coordination complex of the formula:
wherein:
(a) M is titanium;
(b) Cp* is selected from the group consisting of cyclopentadienyl and R\u2033m\u2212 substituted cyclopentadienyl, bound in an \u03b75 bonding mode to M, wherein R\u2033 is independently selected from the group consisting of alkyl of up to 20 carbon atoms and aryl of up to 20 carbon atoms and two adjacent R\u2033 groups may join to form a ring an dm is 1 to 4;
(c) Z is selected from the group consisting of CR\u20322, CR\u20322CR\u20322, SiR\u20322, and SiR\u20322SiR\u20322, wherein each R\u2032 is independently selected from the group consisting of alkyl of up to 20 carbon atoms, aryl of up to 20 carbon atoms, and mixtures thereof of up to 20 carbon atoms;
(d) Y is NR, wherein R is selected from the group consisting of alkyl of up to 20 carbon atoms, aryl of up to 20 carbon atoms, and mixtures thereof of up to 20 carbon atoms;
(e) X is, independently each occurrence, selected from the group consisting of halo, alkyl of up to 10 carbon atoms, aryl of up to 20 carbon atoms, aryloxy of up to 10 carbon atoms, alkoxy of up to 10 carbon atoms, and mixtures thereof of up to 10 carbon atoms; and
(f) n is 2; and
(C) an alkylalumoxane.
2. The process of claim 1 wherein the molar ratio of aluminum atoms to M atoms is from about 1:1 to about 1,000:1.
3. The process of claim 1 wherein said inert support (A) is selected from the group consisting of silica, alumina, and MgCl2.
4. The process of claim 1 wherein said inert support (A) is dehydroxylated silica.
5. A process for polymerizing one or more olefins comprising contacting an olefin monomer or monomers under polymerization conditions in the presence of a catalyst system for olefin polymerization comprising:
(A) an inert support; and
(B) a metal coordination complex of the formula:
wherein:
M is titanium;
R each occurrence is independently selected from the group consisting of alkyl, and aryl of up to 10 carbons;
Y is nitrogen; and
X independently each occurrence is halo, alkyl, aryl, or alkoxy of up to 10 carbons; and
(C) an alumoxane.

1. A radiopharmaceutical of the formula:
M(Ch)n,

or pharmaceutically acceptable salt thereof, wherein:
M is a radionuclide selected from: 64Cu, 67Cu, 67Ga, 68Ga, 99mTc, 111In, 90Y, 149Pr, 153Sm, 159Gd, 166Ho, 169Yb, 177Lu, 86Re, and 188Re;
Ch is an N-substituted 3-hydroxy-4-pyridinone compound of the formula (I):
or a pharmaceutically acceptable salt thereof, wherein:
X is selected from the group: CH2, C(O), C(S), P(O)R3R4, SO2, C(\u2550NH)NH, C(O)NH, and C(S)NH;
R1 and R2 are independently selected from: H, C1–C10 alkyl substituted with 0-5 R5, C2-C10 alkenyl substituted with 0-5 R5, aryl substituted with 0-3 R5, and heteroaryl substituted with 0-3 R5;
R3 and R4 are independently selected from: C1-C10 alkyl substituted with 0-5 R5, C2-C10 alkenyl substituted with 0-5 R5, aryl substituted with 0-3 R5, and heteroaryl substituted with 0-3 R5, or R3 and R4 may be taken together to form a C5-C7 cyclic alkyl group optionally interrupted with O or NR6;
R5 is selected from: OH, C(\u2550O)R6, C(\u2550O)OR6, C(\u2550O)NR6R7, PO(OR6)(OR7), and S(O)2OR6;
R6 and R7 are independently selected from: H, C1-C10 alkyl, and aryl; and
n is 2 or 3.
2. The radiopharmaceutical according to claim 1 wherein:
M is a radionuclide selected from: 67Ga, 68Ga, 99mTc, and 111In; and
n is 3.
3. The radiopharmaceutical according to claim 1 wherein:
M is 111In; and
n is 3.
4. The radiopharmaceutical according to claim 1 wherein:
M is 111In;
n is 3.
X is CH2;
R1 is H;
R2 is methyl; and
R3 and R4 are taken together form a 6-membered cyclic piperidine ring.
5. The radiopharmaceutical according to claim 1 wherein:
M is 111In;
n is 3;
X is CH2;
R1 is H;
R2 is methyl; and
R3 and R4 are taken together form a 6-membered cyclic morpholine ring.
6. A method of preparing a radiopharmaceutical of claim 1, comprising the step of:
reacting a salt of said radionuclide with an excess of said N-substituted 3-hydroxy-4-pyridinone compound of the formula (I).
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semi-continuous vertical direct chill casting process for manufacturing a rolling slab andor extrusion billet, in which a separator and two liquid metal supply systems, optionally spouts or troughs or tundishes, arranged on either side of the separator, are used, and wherein said process comprises:
a) One aluminium alloy is cast through a first liquid metal supply system, optionally a spout or trough or tundish, into a semi-continuous vertical casting mould,
b) The separator, made of metal andor a refractory material, is introduced into the mould, in contact with the solidification front,
c) A second aluminium alloy is cast into the semi-continuous vertical casting mould, on the other side of the separator, via a second liquid metal supply system, optionally a spout or trough or tundish,
d) The separator is raised simultaneously with the end of casting of the alloys, or before the end of casting of the alloys, in which case, the alloys may mix together in a zone in which slab andor billet casting ended,
e) The solidified slab andor billet is removed from the semi-continuous casting mould,
wherein a vibrator, andor a vibratory motion is applied to the separator, at least while said separator is in contact with the solidification front, to prevent said separator from becoming trapped andor entrained by solidified metal.
2. A process according to claim 1, wherein the separator is raised before casting ceases, enabling the alloys to mix in a zone where casting ends, with said end zone then being cropped.
3. A process according to claim 1, wherein the alloys have different compositions.
4. A process according to claim 1, wherein a part of the slab andor billet where casting begins, before the separator is inserted and the second alloy cast, is also cropped.
5. A process according to claim 1, wherein the separator is a flat plate cut so as to mate with a vertical section of the solidification front extending across the mould.
6. A process according to claim 1, wherein the separator is a hollow cylinder.
7. A process according to claim 1, wherein the separator is a hollow body of essentially rectangular cross-section.
8. A process according to claim 7, wherein the essentially rectangular cross-section comprises at least one rounded corner for mating with a horizontal cross-section of the solidification front of a cast slab.
9. A process according to claim 7, wherein said process involves a hollow body that has a rectangular cross-section and a bottom defined by a non-flat surface with at least one profiled corner that matches a shape of the solidification front in a corner.
10. A process according to claim 1, wherein the separator comprises steel andor a refractory metal optionally comprising molybdenum or tungsten.
11. A process according to claim 1, wherein the separator comprises ceramic andor glass fibre-reinforced ceramic refractory material.
12. A process according to claim 1, wherein amplitude of vibrations applied to the separator is around 100 \u03bcm at a frequency ranging from approximately 100 Hz up to an ultrasonic frequency.
13. A process according to claim 1, wherein vibratory motion is produced by any pneumatic, electric andor ultrasound-emitting vibrator.
14. A process according to claim 1, wherein vibration frequency is in a range from 100 to 20,000 Hz.
15. A process according to claim 1, wherein vibration amplitude is in a range from 100 to 200 \u03bcm.
16. A process according to claim 1, wherein the first and second alloys have the same composition.
17. A process according to claim 1, modified to enable casting of more than two alloys, using multiple separators.
18. A semi-continuous direct chill vertical slab andor billet casting device comprising a tubular cylindrical andor rectangular semi-continuous vertical casting mould that is open-ended except for a bottom end, which is sealed at a start of casting by a bottom block, and wherein a lowering mechanism moves said bottom block downwards as the slab andor billet is cast and solidified by water in direct contact with a product, and wherein liquid metal is poured into a top of the mould, and the slab andor billet exits from a bottom end, and wherein a top opening is equipped with two metal supply devices, optionally spouts or troughs or tundishes, and a separator designed to be inserted into a sump of liquid metal in contact with a solidification front inside the mould, thereby dividing the sump into two separate zones, and further wherein the separator is connected to a vibrator device that enables a multidirectional vibratory motion to be imparted to the separator, at least throughout a period in which said separator is in contact with the solidification front, and wherein said vibrations have an amplitude from 100 to 200 \u03bcm, and are delivered at a frequency in a range from approximately 100 Hz up to ultrasonic frequency.
19. A device according to claim 18, wherein the separator is a flat plate.
20. A device according to claim 18, wherein the separator is a hollow cylinder used in combination with a tubular mould of essentially circular cross-section.
21. A device according to claim 19, wherein the separator is a hollow body of essentially rectangular cross-section used in combination with a tubular mould of essentially rectangular cross-section.
22. A device according to claim 21, wherein the essentially rectangular cross-section of the separator features one or more rounded corners mating with a horizontal section solidification front of a cast slab.
23. A device according to claim 21, wherein the separator is of rectangular cross-section and has a bottom defined by a non-flat surface with one or more profiled corners that match a shape of the solidification front.
24. A device according to claim 18, wherein the separator comprises steel andor a refractory metal optionally molybdenum or tungsten.
25. A device according to claim 18, wherein the separator comprises a ceramic andor glass fibre-reinforced ceramic refractory material.
26. A device according to claim 18, wherein the vibratory motion is produced by any pneumatic, electric andor ultrasound-emitting vibrator.
27. A device according to claim 18, capable of being modified to comprise more than one separator and more than two liquid metal supply devices, enabling slabs andor billets to be cast using more than two aluminium alloys.
28. A device according to claim 18, wherein said vibrations are delivered at a frequency of from 100 to 20,000 Hz.