All The Claims

1. A laser device comprising:
a seed laser;
a polarizer optically coupled to receive an output of the seed laser and generate a polarization filtered output;
a pseudorandom bit sequence (PRBS) pattern generator configured to generate a PRBS pattern; and
a phase modulator configured to apply a PRBS modulation scheme to the polarization filtered output based on the PRBS pattern,
wherein the PRBS pattern is generated to have a length above a first threshold for avoiding an occurrence of backward propagation being in phase with forward propagation in an active fiber receiving an output of the phase modulator when the pattern repeats and below a second threshold for phase mismatch in the active fiber.
2. The laser device of claim 1, wherein the polarizer comprises a linear fiber polarizer.
3. The laser device of claim 1, wherein the first threshold is five bits and wherein the second threshold is ten bits.
4. The laser device of claim 1, wherein the PRBS pattern is a PRBS including seven bits.
5. The laser device of claim 1, further comprising a power amplifier configured to amplify an output of the PRBS pattern generator prior to provision of the PRBS pattern to the phase modulator.
6. The laser device of claim 1, further comprising a fiber amplifier configured to amplify an output of the phase modulator to generate a power level of at least about 1 kW.
7. The laser device of claim 6, wherein the second threshold is determined relative to causing phase mismatch in the active fiber of the fiber amplifier.
8. The laser device of claim 1, wherein the seed laser comprises a seed diode having a linewidth of about 30 MHz.
9. The laser device of claim 1, further comprising a laser controller configured to control operation of the laser device.
10. The laser device of claim 8, wherein the laser controller includes processing circuitry configured to control a modulation scheme employed by the laser device.
11. The laser device of claim 8, wherein the laser controller includes processing circuitry configured to control a single frequency seed source employed by the seed laser.
12. A phase modulator for a laser device, the phase modulator comprising:
an input device in operable communication with a polarizer to receive a polarization filtered output of the polarizer responsive to the polarizer polarizing an output of a seed laser; and
a modulator configured to modulate the polarization filtered output of the polarizer based on a pseudorandom bit sequence (PRBS) pattern provided by a PRBS generator in communication with the phase modulator,
wherein the PRBS pattern is generated to have a length above a first threshold for avoiding an occurrence of backward propagation being in phase with forward propagation in an active fiber receiving an output of the phase modulator when the pattern repeats and below a second threshold for phase mismatch in the active fiber.
13. The phase modulator of claim 12, wherein the first threshold is five bits and wherein the second threshold is ten bits.
14. The phase modulator of claim 12, wherein the PRBS pattern is a PRBS including seven bits.
15. The phase modulator of claim 12, wherein the PRBS pattern is provided from the PRBS generator via a power amplifier configured to amplify an output of the PRBS pattern generator prior to provision of the PRBS pattern to the phase modulator.
16. The phase modulator of claim 12, wherein an output of the phase modulator is provided to a fiber amplifier configured to amplify an output of the phase modulator to generate a power level of at least about 1 kW.
17. The phase modulator of claim 12, wherein the phase modulator operates at least partially under control of a laser controller.
18. The phase modulator of claim 17, wherein the laser controller includes processing circuitry configured to control a modulation scheme employed by the laser device.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of manufacturing a nonvolatile memory device, comprising:
providing a semiconductor substrate including a cell region;
forming first gate lines and second gate lines over the cell region of the semiconductor substrate, wherein the first gate lines are spaced from each other at a first width, the second gate lines are spaced from each other at a second width, and the first gate lines and the second gate lines are spaced from each other at a third width;
forming first junction regions in the semiconductor substrate between the first gate lines, between the first gate line and an adjacent second gate line, and between the second gate lines by performing a first ion implantation process; and
forming second junction regions in first junction region of the semiconductor substrate between the first gate lines and between a second gate line and an adjacent first gate line by performing a second ion implantation process,
wherein the third width is wider than the second width, and wherein the third width is larger than a height of the first gate lines and the second gate lines.
2. The method of claim 1, wherein the second ion implantation process is a tilt ion implantation process.
3. The method of claim 2, wherein the second ion implantation process is not performed in the first junction regions formed between the second gate lines.
4. The method of claim 1, wherein the first ion implantation process is performed by implanting impurities in a direction vertical to the semiconductor substrate.
5. The method of claim 1, wherein an impurity concentration of the second ion implantation process is lower than an impurity concentration of the first ion implantation process.
6. The method of claim 1, wherein the second ion implantation process comprises:
forming a mask pattern exposing the first junction regions formed between the first gate lines and between the second gate line and the first gate line; and
performing the second ion implantation process to form the second junction regions in the exposed first junction regions using the mask pattern as an ion implantation mask.
7. The method of claim 1, wherein the second ion implantation process comprises:
forming spacers on sidewalls of the first gate lines and on a sidewall of the second gate line formed adjacent to the first gate lines with covering the first junction regions formed between the second gate lines; and
performing the second implantation process to form the second junction regions between the first gate lines and between the second gate line and the first gate line using the spacers as an ion implantation mask.
8. The method of claim 1, wherein the first gate lines comprise select lines and the second gate lines comprise word lines.
9. The method of claim 1, wherein the first width is wider than that of the second width.
10. The method of claim 7, wherein the spacer comprises an oxide layer or nitride layer.
11. A method of manufacturing a nonvolatile memory device, comprising;
providing a semiconductor substrate including a cell region and a peripheral region;
forming select transistors and a plurality of memory cells over the semiconductor substrate of the cell region, and forming low-voltage NMOS transistors or high-voltage NMOS transistors over the semiconductor substrate of the peripheral region, wherein a memory cell and an adjacent select transistor are spaced from each other at a first width, and the low-voltage NMOS transistors or high-voltage NMOS transistors are spaced from each other at a second width, and wherein the first width is smaller than a height of the select transistors and the memory cells;
forming first junction regions in the semiconductor substrate between the select transistors, between the memory cell and the adjacent select transistor, between the plurality of the memory cells, and between the low-voltage NMOS transistors or the high-voltage NMOS transistors;
forming spacers on sidewalls of the select transistors, the memory cells, and the low-voltage NMOS transistors or the high-voltage NMOS transistors, wherein the spacers formed on the sidewalls of the memory cells cover the first junction regions formed between the memory cells; and,
forming second junction regions in the first junction regions of the semiconductor substrate between the low-voltage NMOS transistors or the high-voltage NMOS transistors by performing a tilt ion implantation process using the spacers as an ion implantation mask.
12. The method of claim 11, wherein the first width is narrower than the second width.
13. The method of claim 11, wherein the spacer comprises oxide layer or nitride layer.

1. A conceptual article collector comprising:
a concept-character string look-up-table indexed by keywords for searching articles, each keyword corresponding to a plurality of character strings and their respective searching conditions;
a character string-article look-up-table indexed by character strings contained in said concept-character string look-up-table, each character string corresponding to a quantity of articles being processed;
an article pre-search means to from time to time search in a quantity of articles based on character strings in said concept-character string look-up-table and to store result of such search in said character string-article look-up-table;
an article search means to search in indexes in said concept-character string look-up-table according to keywords input by user to obtain corresponding character strings therein, to search corresponding articles of the searched character strings in said character string-article look-up-table, to calculate the relative intensity values of each searched article and the concept represented by said input keyword and to output result of such calculation; and
an article database to store a quantity of articles to be searched.
2. The conceptual article collector according to claim 1 wherein said concept-character string look-up-table comprises a plurality of keywords and their corresponding character strings and weights of respective character strings; wherein said weight of one character string represents influence in the calculation of the relation between an article containing said one character string and the keyword corresponding to said one character string and wherein a character string comprises a collection of characters, symbols andor numbers.
3. The conceptual article collector according to claim 2 wherein said character string comprises a word in the Chinese language system.
4. The conceptual article collector according to claim 1 wherein said article database comprises a communication device connectable to a remote database.
5. The conceptual article collector according to claim 1 wherein said article pre-search means searches in said article database at predetermined intervals.
6. The conceptual article collector according to claim 1 wherein said article search means conducts whole text search in said article database if an input search keyword is not contained in the index of the concept-character string look-up-table.
7. The conceptual article collector according to claim 1 wherein said article search means calculates the relative intensity value Rn of an article (Document n) in relation to said concept represented by said input keyword according to the following formula:
Rn=\u03a3SiWi

wherein Rn represents the relative intensity value of Document n in relation to the concept represented by the input search keyword, Si represents number of location of existence or frequency of existence in Document n of Character String i, which is corresponding to the input search keyword in said concept-character string look-up-table, Wi represents weight of Character String i defined in the concept-character string look-up-table, n, i are natural numbers, |Wi|<1.
8. The conceptual article collector according to claim 1 wherein said article search means further compares the relative intensity value of a searched article with a threshold and labels articles with relative intensity value greater than said threshold.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A light emitting device comprising:
a substrate;
a first electrode formed on a top surface of the substrate;
a light emitting layer formed on a top surface of the first electrode and including an emissive element generating a light;
a second electrode formed on a top surface of the light emitting layer; and
an auxiliary layer disposed adjacent to a bottom surface of the substrate opposing a light emitting direction of the light, the auxiliary layer having a refractive index lower than that of the substrate.
2. The light emitting device of claim 1, wherein the light comprises a white light.
3. The light emitting device of claim 1, wherein the light emitting layer comprises:
a first light emitting layer generating a red light;
a second light emitting layer generating a green light; and
a third light emitting layer generating a blue light,
wherein the first light emitting layer, the second light emitting layer, and the third light emitting layer are separated from each other on the top surface of the first electrode.
4. The light emitting device of claim 1, wherein the auxiliary layer is provided therein with light reflection particles which convert the path of the light when the light is incident into the auxiliary layer from the substrate.
5. The light emitting device of claim 1, wherein the auxiliary layer comprises at least two layers, in which a lower layer has a refractive index lower than that of an upper layer.
6. The light emitting device of claim 1, wherein the substrate has flexibility.
7. The light emitting device of claim 1, wherein the substrate has inflexibility.
8. The light emitting device of claim 1, further comprising a protective layer which is formed on the second electrode to cover an entire surface of the substrate while protecting the light emitting layer.
9. The light emitting device of claim 8, wherein the protective layer comprises a material identical to a material forming the substrate.
10. The light emitting device of claim 8, further comprising an intermediate layer, wherein the intermediate layer is interposed between the protective layer and the second electrode so as to convert the path of the light, which has been incident into the intermediate layer while being tilted relative to the second electrode, into a direction perpendicular to the second electrode.
11. The light emitting device of claim 1, wherein the emissive element comprises an organic compound.
12. The light emitting device of claim 1, wherein the light emitting layer further comprises an auxiliary light emitting particles distributed in the emissive element to convert a path of the light.
13. The light emitting device of claim 12, wherein the auxiliary light emitting particles have a diameter smaller than a wavelength of the light.
14. The light emitting of claim 13, wherein the light comprises a blue light and the auxiliary light emitting particles have a diameter smaller than a wavelength of the blue light.
15. A display device comprising:
a display panel that displays an image; and
a backlight unit installed below the display panel to provide light to the display panel,
the backlight unit comprising:
a substrate;
a first electrode formed on a top surface of the substrate;
a light emitting layer formed on a top surface of the first electrode and including an emissive element generating a light and auxiliary light emitting particles distributed in the emissive element to convert a path of the light; and
a second electrode formed on a top surface of the light emitting layer;
wherein the light emitting layer further includes a first light emitting layer, a second light emitting layer and a third light emitting layer each disposed separated from each other on the top surface of the first electrode, the first, second and third light emitting layers emitting colors different from each other.
16. The display device of claim 15, wherein the auxiliary light emitting particles have a diameter smaller than a wavelength of the light.
17. The display device of claim 15, wherein the light comprises a blue light and the auxiliary light emitting particles have a diameter smaller than a wavelength of the blue light.
18. The display device of claim 15, wherein the light comprises a white light.
19. The display device of claim 15, wherein the light emitting layer comprises:
the first light emitting layer generating a red light;
the second light emitting layer generating a green light; and
the third light emitting layer generating a blue light.
20. The display device of claim 15, wherein the display panel comprises:
two transparent substrates that face each other; and
a liquid crystal layer interposed between the two transparent substrates.
21. A display device comprising:
a substrate on which pixel areas are defined;
a first electrode formed in each pixel area of the substrate;
a light emitting layer formed on a top surface of the first electrode and including an emissive element generating a light and auxiliary light emitting particles distributed in the emissive element to convert a path of the light;
a second electrode formed on a top surface of the light emitting layer; and
an auxiliary layer disposed adjacent to a bottom surface of the substrate opposing a light emitting direction of the light, the auxiliary layer having a refractive index lower than that of the substrate.
22. The display device of claim 21, wherein the first electrode comprises first to third sub-electrodes, which are distinguished from each other, and
the light emitting layer comprises:
a first light emitting layer generating a red light in correspondence with the first sub-electrode;
a second light emitting layer generating a green light in correspondence with the second sub-electrode; and
a third light emitting layer generating a blue light in correspondence with the third sub-electrode.