1461184469-4e4f4d4e-212c-47b3-8362-b1418826093c

1. A press-push flash drive apparatus comprising:
a tubular casing including an integral tubular wall defining an inner chamber, the tubular wall having a front end portion defining a first opening, a rear end portion defining a second opening, and a third opening defined in the tubular wall between the front and rear end portions;
a plastic housing assembly including first cap portion fixedly connected over the front end portion of the tubular casing, a second cap portion fixedly connected over the rear end portion of the tubular casing, and a sleeve portion disposed in the inner chamber of the tubular casing between the first cap portion and the second cap portion, wherein the first cap portion defines a front opening; and
a carrier assembly disposed in the inner chamber of the tubular casing, the carrier assembly comprising:
a printed circuit board assembly (PCBA) disposed in the inner chamber of the tubular casing and including at least one electronic device,
a plug connector fixedly connected to the PCBA and electronically connected to said at least one electronic device, and
a plastic positioning member disposed in the inner chamber of the tubular casing and including an actuating button protruding through the third opening of the tubular casing, the positioning member being fixedly connected to the PCBA and restricted to slide in the inner chamber such that manual movement of actuating button along the third opening causes the plug connector to move between a first position, in which the plug connector extends through the front opening such that the plug connector is exposed outside of the tubular casing, and a second position in which the plug connector is entirely disposed in the inner chamber of the tubular casing,

wherein the positioning member is disposed relative to the sleeve portion such that when the actuating button is manually pushed along the third opening during movement of the plug connector between the first and second positions, a portion of the positioning member slides against the sleeve portion.
2. The apparatus according to claim 1, wherein the plastic housing assembly comprises a snap-coupling mechanism arranged such that, when the plastic housing assembly is mounted onto the tubular casing and the snap-coupling mechanism is operably engaged, the tubular casing is fixedly and rigidly held between the front and rear cap portions, and the sleeve portion is rigidly held in the inner chamber of the tubular casing.
3. The apparatus according to claim 2,
wherein each of the front and rear cap portions comprise elongated lock pawls, and
wherein the tubular casing comprises elongated lock grooves that are shaped and arranged such that, when one of the front and rear cap portions is pressed onto an associated one of the front and rear end portions of the tubular casing, the elongated lock pawl snap-couples into the elongated lock grooves to secure said one of the front and rear cap portions to the tubular casing.
4. The apparatus according to claim 2, wherein the sleeve portion is integrally molded with the front cap portion and sized to fit between the tubular wall and the positioning member when the front cap portion is operably fixedly connected over the front end portion of the tubular casing.
5. The portable computer peripheral apparatus according to claim 4,
wherein the rear cap portion comprises at least one first lock structure, and
wherein the sleeve portion comprises at least one second lock structure that is shaped and arranged such that, when the rear cap portion is pressed onto the rear end portion of the tubular casing when the front cap portion is operably fixedly connected over the front end portion of the tubular casing, the at least one first lock structure engages with the at least one second lock structure.
6. The apparatus according to claim 5,
wherein the at least one first lock structure comprises a pair of lock pawls,
wherein the at least one second lock structure comprises a pair of lock grooves, and
wherein the pair of lock pawls are disposed such that, when the rear cap portion is pressed onto the rear end portion of the tubular casing when the front cap portion is operably fixedly connected over the front end portion of the tubular casing, the pair of lock pawls snap-couple into the pair of lock grooves.
7. The apparatus according to claim 4, wherein the plastic housing assembly further comprises a side sleeve portion disposed between the positioning member and the tubular wall and defines an actuating slot that is sized to generally align with the third opening of the tubular casing such that the actuating button protrudes through both the actuating slot of the side sleeve portion and the third opening of the tubular casing.
8. The apparatus according to claim 7,
wherein the positioning member further comprises at least one first locking pawl disposed adjacent to the actuating button,
wherein the side sleeve portion further defines first and second locking groove portions that communicate with the actuating slot, and
wherein the positioning member is mounted in the tubular casing such that the at least one first locking pawl engages the first locking groove portion when the plug connector is in the first position, and such that the at least one first locking pawl engages the second locking groove when the plug connector is in the second position.
9. The apparatus according to claim 1,
wherein the positioning member further comprises at least one first locking structure disposed adjacent to the actuating button,
wherein the tubular casing further comprises a second locking structure and a third locking structure, and
wherein the positioning member is mounted in the tubular casing such that the first locking structure engages the second locking structure when the plug connector is in the first position, and such that the first locking structure engages the third locking structure when the plug connector is in the second position.
10. The portable computer peripheral apparatus according to claim 1, wherein the positioning member comprises:
a base portion,
first and second side walls fixedly connected to opposing side edges of the base portion; and
a flexible wall connected to the base portion such that the flexible wall is resiliently bendable relative to the base portion,
wherein the actuating button comprises a press-push button disposed on the flexible wall such that when the press-push button is pressed into the tubular casing, the first and second slide rails press against the sleeve portion such that the flexible wall bends into the housing.
11. The apparatus of claim 10,
wherein the positioning member further comprises a first locking structure disposed on the flexible wall,
wherein the housing further comprises a second locking structure and a third locking structure, and
wherein the positioning member is mounted in the housing such that the first locking structure engages the second locking structure when the plug connector is in the first position, and such that the first locking structure engages the third locking structure when the plug connector is in the second position.
12. The apparatus according to claim 1, wherein the tubular casing comprises a metal structure having parallel upper and lower wall portions integrally connected by opposing first and second side wall portions.
13. The apparatus according to claim 12, wherein the third opening is defined in the upper wall portion of the metal structure, and the positioning member is disposed inside the tubular casing such that the actuating button extends through the upper wall portion.
14. The apparatus according to claim 12, wherein the third opening is defined in one of the side wall portions of the metal structure, and the positioning member is disposed inside the tubular casing such that the actuating button extends through said one of the side wall portion.
15. The apparatus of claim 1, wherein said at least one electronic device disposed in a Chip-On-Board (COB) package.
16. The apparatus of claim 1, wherein said at least one electronic device disposed in a Slim Printed Circuit Board Assembly (Slim PCBA) package.
17. The apparatus of claim 1, wherein the plug connector comprises a Universal Serial Bus (USB) plug.
18. The apparatus of claim 1, wherein the at least one electronic device comprises
an inputoutput interface circuit, coupling to a processing unit, configured for receiving a logical sector address (LSA) along with a data transfer request from a host computing device, said processing unit is configured for extracting set, entry, page and sector numbers from the LSA with an indexing scheme;
wherein said processing unit further comprises a page buffer, an address correlation page usage memory (ACPUM), a partial logical-to-physical address and page usage information (PLTPPUI) tracking table, a wear leveling counter and bad block indicator (WLBB) tracking table; and
a flash memory that includes a reserved area for a plurality of first physical blocks and a plurality of second physical blocks, the first physical blocks is referenced by a plurality of first special logical addresses while the second physical blocks by a plurality of second special logical addresses;
wherein the plurality of first physical blocks is configured for storing PLTPPUI and the plurality of second physical blocks for storing wear leveling and bad block indicator, ACPUM is configured to keep one set, corresponding to the set number, of PLTPPUI, the PLTPPUI tracking table is configured to hold correlation between the first special logical addresses and the first physical blocks and the WLBB tracking table is configured to hold correlation between the second special logical addresses and the second physical blocks.
19. The apparatus of claim 1, wherein the at least one electronic device comprises:
at least one MLC based flash memory chip and a flash memory controller mounted thereon,
wherein the flash memory controller is configured for managing memory address of the flash memory device with following operations:
receiving, in the MLC based flash memory device, a logical sector address (LSA) along with a data transfer request from a host computing device;
extracting set, entry, page and sector numbers from the LSA with an indexing scheme;
loading a set, corresponding to the set number, of partial logical-to-physical address and page usage information (PLTPPUI) into an address correlation page usage memory (ACPUM);
reading a physical block number of flash memory of the MLC based flash memory device, the physical block number corresponds to the entry number in the ACPUM; and
when the data transfer request is a read request, reading data from a physical page corresponding to the page number of the physical block number of the flash memory to a page buffer, and sending a request data sector from the page buffer in accordance with the sector number;
when the data transfer request is a write request, writing page buffer contents to the physical page corresponding to the page number of the physical block number of the flash memory if the page buffer contents have been modified, writing a received data sector to the page buffer in accordance with the sector number and setting corresponding one of a plurality of sector update flags reflecting data sector just written to the page buffer.
20. The apparatus of claim 19, wherein said plug connector includes an interface circuit of one of Universal Serial Bus (USB), Secure Digital (SD), Micro SD, Multi-Media Card (MMC), Compact Flash (CF), Memory Stick (MS), PCI-Express, a Integrated Drive Electronics (IDE), Serial Advanced Technology Attachment (SATA), external SATA, Radio Frequency Identification (RFID), fiber channel and optical connection.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A device for coalescing the liquid present in a liquid vapor mixture, the device comprising:
a device inlet;
a device outlet; and
a common chamber connected to the device inlet and the device outlet, wherein the liquid vapor mixture flows through the common chamber from the device inlet to the device outlet in a flow direction, the common chamber having a first portion upon which the liquid vapor mixture flows through upon entering the common chamber from the device inlet, the first portion connected with the device inlet and the device outlet, and a second portion adjacent the first portion and connected to the device inlet and device outlet only through the first portion, wherein a portion of the liquid within the liquid vapor mixture coalesces within the second portion and wherein the liquid vapor mixture exits the common chamber by the device outlet as a liquid and a vapor having a substantial amount of the liquid separate and apart from a substantial amount of the vapor.
2. The device of claim 1, the common chamber having a width greater than the width of the device inlet or the device outlet.
3. The device of claim 1, wherein the general path from the device inlet to the device outlet defines a flow direction, and wherein the second portion is located away from the flow direction, so that the liquid may coalesce in the second portion.
4. The device of claim 1, the device further comprising a metering unit positioned adjacent to the device inlet, the metering unit having a valve assembly for regulating the flow of liquefied heat transfer fluid into the common chamber.
5. The device of claim 1, the device further comprising a second device inlet coupled to the common chamber, wherein the second device inlet is configured to receive a high pressure vapor and transfer the high pressure vapor to the common chamber.
6. The device of claim 1, wherein the liquid vapor mixture is in a turbulent state upon entering the device inlet, so that a portion of the vapor within the liquid vapor mixture gets trapped in the second portion.
7. The device of claim 1, wherein a vortex is formed in the common chamber.
8. The device of claim 1, further comprising a metering unit coupled to the device inlet, the metering unit volumetrically expanding the heat transfer fluid into the common chamber.
9. The device of claim 1, further comprising a reservoir within the second portion, wherein the reservoir traps a portion of the heat transfer fluid within the common chamber, allowing the liquid to coalesce.
10. The device of claim 1, further comprising a notch adjacent the outlet, wherein the notch reduces the amount of heat transfer fluid that can exit the common chamber through the device outlet.
11. The device of claim 1, further comprising a second device inlet providing fluid ingress for a hot gas to enter the common chamber.
12. The device of claim 1, wherein the heat transfer fluid is in a turbulent state upon entering the inlet.
13. The device of claim 1, wherein an eddy is formed in the second portion.
14. The device of claim 1, wherein a vortex is formed in the second portion.
15. The device of claim 1, wherein the device forms part of a multifunctional valve for generating a heat transfer fluid wherein a substantial amount of liquid is separate and apart from a substantial amount of vapor.
16. The device of claim 1, wherein the first portion has a length equal to no more than 75% of the length of the common chamber.
17. The device of claim 16, wherein the first portion has a length equal to no more than 35% of the length of the common chamber.
18. A valve comprising a XDX valve having a first inlet and an outlet, and the device of claim 1, wherein the device inlet is in flow communication with the first inlet of the XDX valve and the device outlet is in flow communication with the outlet of the XDX valve.

1461184459-390ee345-6d5f-47b2-9a71-26b10fedb016

1. A method of fabricating a semiconductor device, comprising:
forming a first gate trench in a first active region of a semiconductor substrate;
forming a first gate layer partially filling the first gate trench; and
first implanting ions in the first gate layer and in the first active region on both sides of the first gate layer such that (1) the first gate layer becomes a first gate electrode of a first conductivity type and (2) first impurity regions of the first conductivity type are formed on both sides of the first gate electrode.
2. The method of claim 1, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the first gate layer; and
forming a first spacer on an upper sidewall of the first gate trench by removing at least a portion of the spacer insulating layer.
3. The method of claim 2, wherein the spacer insulating layer includes at least one of a silicon oxide layer, a silicon oxynitride (SiON) layer and a silicon nitride layer.
4. The method of claim 1, further comprising:
forming a first buffer region in the first active region before forming the first gate trench,
wherein the first buffer region has the same conductivity type as the first impurity regions and has a lower impurity concentration than the first impurity regions.
5. The method of claim 1, wherein forming the first gate layer comprises:
forming a first gate layer material on the semiconductor substrate having the first gate trench, the first gate layer material including at least one of a silicon (Si) layer, a germanium (Ge) layer and a SiGe layer; and
removing at least a portion of the gate layer material.
6. The method of claim 1, wherein the first conductivity type is an N-type or a P-type.
7. The method of claim 1, further comprising:
forming a second gate trench in a second active region of the semiconductor substrate while the first gate trench is formed;
forming a second gate layer partially filling the second gate trench while the first gate layer is formed; and
second implanting ions in the second gate layer and in the second active region on both sides of the second gate layer such that (1) the second gate layer becomes a second gate electrode of a second conductivity type different from the first gate electrode and (2) second impurity regions of the second conductivity type are formed on both sides of the second gate electrode,
wherein the first implanting is performed for simultaneously forming the first gate electrode and the first impurity regions, and wherein the second implanting is performed for simultaneously forming the second gate electrode and the second impurity regions.
8. The method of claim 7, further comprising:
forming an isolation region in the semiconductor substrate to define the first and second active regions before forming the first and second gate trenches.
9. The method of claim 7, further comprising:
forming a first buffer region in the first active region before forming the first and second gate trenches, wherein the first buffer region has the same conductivity type as the first impurity regions and has a lower impurity concentration than the first impurity regions; and
forming a second buffer region in the second active region before or after forming the first buffer region, wherein the second buffer region has the same conductivity type as the second impurity regions and has a lower impurity concentration than the second impurity regions.
10. The method of claim 9, further comprising:
forming a well region in the second active region, the well region having a conductivity type different from the conductivity type of the second buffer region.
11. The method of claim 7, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the second gate layer; and
forming a second spacer on an upper sidewall of the second gate trench by removing at least a portion of the spacer insulating layer.
12. The method of claim 1, further comprising:
forming a first gate dielectric layer on the semiconductor substrate in the first active region having the first gate trench before forming the first gate layer.
13. The method of claim 7, further comprising:
forming a second gate dielectric layer on the semiconductor substrate in the second active region having the second gate trench before forming the second gate layer.
14. The method of claim 7, further comprising:
forming a third active region in the semiconductor substrate;
forming a third gate layer on the third active region of the semiconductor substrate while the first and second gate layers are formed; and
implanting ions in the third gate layer and in the third active region on both sides of the third gate layer such that (1) the third gate layer becomes a third gate electrode and (2) third impurity regions are formed on both sides of the third gate electrode.
15. The method of claim 14, further comprising:
forming a third gate dielectric layer on the semiconductor substrate in the third active region before forming the third gate layer.
16. The method of claim 14, before implanting the ions, the method further comprising:
forming a spacer insulating layer on the entire surface of the semiconductor substrate having the third gate layer; and
forming a third spacer on sidewalls of the third gate layer by removing at least a portion of the spacer insulating layer.
17. The method of claim 14, further comprising:
forming an isolation region in the semiconductor substrate to define the first, second and third active regions before forming the first and second gate trenches.
18. The method of claim 14, further comprising:
forming a first ion implantation mask configured to cover the second and third active regions and expose the first active region; and
implanting first impurities into the first active region using the first ion implantation mask as a photoresist.
19. The method of claim 14, further comprising:
forming a second ion implantation mask configured to cover the first active region and expose the second and third active regions; and
implanting second impurities into the second and third active regions using the second ion implantation mask as a photoresist.
20. The method of claim 1, wherein the semiconductor substrate is made of silicon.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. Method of controlling at least one wind turbine blade during a stopping process of a rotor in a wind turbine system, said method comprising:
optimizing blade control velocity of said blades at least toward a position of no-acceleration force applied to the rotor in response to one or more feedback values of the system andor the surroundings of the system, and
controlling pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
2. Method according to claim 1, where said controlling includes regulating of the pitch angle of one or more pitch or active stall wind turbine blades from a value at an initiating of the stopping process to a value of said no-acceleration position.
3. Method according to claim 1, where regulating of a teeter angle of a rotor teeter mechanism is used in obtaining the no-acceleration of said at least one wind turbine blade.
4. Method according to claim 1, where the pitch angles of said at least one wind turbine blade are controlled individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
5. Method according to claim 1, where said controlling includes a closed loop configuration with said feedback values established by measuring mechanical or physical data of the wind turbine system andor the surroundings of the system.
6. Method according to claim 5, where said one or more feedback values result in control values for controlling said at least one wind turbine blade within control limit values.
7. Method according to claim 1, where a pitch velocity is controlled in relation to a non-linear curve with a higher initial slope.
8. Method according to claim 7, where the controlling of the pitch velocity comprises a high initial transient from 0 to circa 15 degreessec in the first few seconds.
9. Method according to claim 1, where the pitch angles of said at least one wind turbine blade are controlled in relation to a cyclic or a similar non-linear curve during every rotation of the rotor in relation to wind speed in different sections of the swept area.
10. Control system for controlling at least one wind turbine blade during a stopping process of a rotor in a wind turbine system, wherein the control system comprises:
sensor means to measure one or more values of the system andor the surroundings of the system,
computing means to establish one or more feedback values of said measured values, and
control means to control said at least one wind turbine blade wherein said means optimizes a blade control velocity of said blades at least toward a position of no-acceleration force applied to the rotor in response to said one or more feedback values, and wherein said means controls pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
11. Control system according to claim 10, wherein said control means comprises means and algorithms for controlling the pitch from the initiating value of the stopping process to a value of said no-acceleration position.
12. Control system according to claim 10, wherein said control means comprises a teeter mechanism that is used in obtaining the no-acceleration of said at least one wind turbine blade.
13. Control system according to claim 10, wherein said sensor means include pitch position sensors, blade load sensors, azimuth sensors, wind sensors, andor teeter angle sensors for measuring mechanical or physical data of the wind turbine system andor the surroundings of the system.
14. Control system according to claim 10, wherein said system includes a closed loop configuration in order to establish said one or more feedback values.
15. Control system according to claim 10, wherein said control means comprises means for controlling the pitch velocity in relation to a non-linear curve with a higher initial slope.
16. Control system according to claim 10, wherein said control means comprises means for controlling the pitch velocity with a high initial transient from 0 to circa 15 degreessec in the first few seconds.
17. Control system according to claim 10, wherein said system controls said at least one wind turbine blade within control limit values.
18. Control system according to claim 17, wherein said computing means includes microprocessor and computer storage means for pitch algorithms and pre-established values of said control limit values.
19. Control system according to claim 10, wherein pitch algorithms control the pitch angles of said at least one wind turbine blade individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
20. Control system according to claim 19, wherein pitch algorithms control the pitch angles of said at least one wind turbine blade in relation to a cyclic or a similar non-linear curve during every rotation of the rotor.
21. Wind turbine with at least one pitch or active stall wind turbine blade in a rotor and a control system according to claim 10 for controlling a pitch actuator system and pitch angle of said at least one wind turbine blade in response to one or more feedback values of the wind turbine andor the surroundings of the wind turbine during a stopping process.
22. Wind turbine according to claim 21, wherein said at least one wind turbine blade is part of a wind turbine with two or three blades.
23. Wind turbine according to claim 21 wherein said pitch actuator system includes electric motors controlling the pitch angle of said at least one wind turbine blade.
24. Wind turbine according to claim 21, wherein said wind turbine comprises a rotor teeter mechanism.
25. Wind turbine according to claim 21, wherein said pitch actuator system controls the pitch angles of said at least one wind turbine blades individually during every rotation of the rotor in order to obtain a substantially common force on the rotor.
26. Wind turbine according to claim 21, wherein said pitch actuator system controls the pitch angles of said at least one wind turbine blade in relation to a cyclic or non-linear curve during every rotation of the rotor.
27.-28. (canceled)