All The Claims

1. A light emitting device comprising:
a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer;
a plurality of reflective islands on the second conductive type semiconductor layer;
a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and
a conductive support member on the second electrode,
wherein each of the plurality of reflective islands is formed of a material different from that of the light emitting structure, and
wherein each of the plurality of reflective islands is formed of metal nitride.
2. The light emitting device of claim 1, wherein the plurality of reflective islands protrudes toward the conductive support member.
3. The light emitting device of claim 2, wherein each of the plurality of reflective islands has a convex lens shape facing the conductive support member.
4. The light emitting device of claim 1, wherein the second electrode contains a metal, and the plurality of reflective islands protrudes toward the inside of the second electrode.
5. The light emitting device of claim 4, wherein each of the plurality of reflective islands has a lens shape convex toward the inside of the second electrode.
6. The light emitting device of claim 1, wherein the second electrode is formed of at least one of silver (Ag), an alloy containing Ag, aluminum (Al), an alloy containing Al, platinum (Pt), and an alloy containing Pt.
7. The light emitting device of claim 1, wherein each of the plurality of reflective islands has a diameter of about 10 nm to about 1,000 nm.
8. The light emitting device of claim 1, comprising each of the plurality of reflective islands is formed by nitrifying a metal island.
9. The light emitting device of claim 1, wherein the plurality of reflective islands is formed of one of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN.
10. The light emitting device of claim 1, wherein each of the plurality of reflective islands is formed of a material having a refractive index less than that of the light emitting structure.
11. The light emitting device of claim 10, wherein the second conductive type semiconductor layer is formed of GaN, and each of the plurality of reflective islands is formed of at least one of AlN and AllnN.
12. The light emitting device of claim 1, wherein the plurality of reflective islands has curvatures different from each other.
13. The light emitting device of claim 1, wherein the plurality of reflective islands has diameters different from each other.
14. The light emitting device of claim 1, wherein the conductive support member is formed of at least one of Ti, Cr, Ni, Al, Pt, Au, W, Cu, and Mo, or comprises a semiconductor substrate in which impurities are injected.
15. A light emitting device package comprising:
a body part;
first and second electrode layers on the body part; and
a light emitting device on the body part, the light emitting device being electrically connected to the first and second electrode layers,
wherein the light emitting device comprises:
a light emitting structure comprising a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer;
a first electrode on the first conductive type semiconductor layer, the first electrode being electrically connected to the first conductive type semiconductor layer;
a plurality of reflective islands on the second conductive type semiconductor layer;
a second electrode on the second conductive type semiconductor layer and the plurality of reflective islands, the second electrode being electrically connected to the second conductive type semiconductor layer; and
a conductive support member on the second electrode,
wherein each of the plurality of reflective islands is formed of a material different from that of the light emitting structure, and
wherein each of the plurality of reflective islands is formed of metal nitride.
16. The light emitting device package of claim 15, wherein the plurality of reflective islands protrudes toward the conductive support member.
17. The light emitting device package of claim 15, wherein the second electrode contains a metal, and the plurality of reflective islands protrudes toward the inside of the second electrode.
18. The light emitting device package of claim 15, wherein the conductive support member is formed of at least one of Ti, Cr, Ni, Al, Pt, Au, W, Cu, and Mo, or comprises a semiconductor substrate in which impurities are injected.
19. The light emitting device package of claim 15, wherein the plurality of reflective islands is formed of one of InAlGaN, GaN, AlGaN, AlInN, InGaN, AlN, and InN.
20. The light emitting device package of claim 15, wherein each of the plurality of reflective islands is formed of a material having a refractive index less than that of the light emitting structure.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

What is claimed is:

1. A method for fabricating a floating gate, comprising:
providing a semiconductor substrate on which a gate dielectric layer, a conducting layer, a first insulating layer, and a patterned hard mask layer with an opening are sequentially formed, such that the opening exposes the first insulating layer;
sequentially etching the first insulating layer and the conducting layer to form a round-cornered trench using the patterned hard mask layer as a mask;
forming a second insulating layer in the round-cornered trench; and
sequentially removing the first insulating layer and the exposed conducting layer using the second insulating layer as a mask, wherein the remaining conducting layer is a floating gate.
2. The method for fabricating a floating gate as claimed in claim 1, wherein the gate dielectric layer is a gate oxide layer.
3. The method for fabricating a floating gate as claimed in claim 1, wherein the conducting layer is a polysilicon layer or an exi-silicon layer.
4. The method for fabricating a floating gate as claimed in claim 1, wherein the first insulating layer is a nitride layer.
5. The method for fabricating a floating gate as claimed in claim 1, wherein the method of etching comprises anisotropic etching.
6. The method for fabricating a floating gate as claimed in claim 5, wherein the anisotropic etching comprises reactive ion etching or plasma etching.
7. The method for fabricating a floating gate as claimed in claim 6, wherein an angle between the anisotropic etching direction and a line perpendicular to the semiconductor substrate is greater than 0.
8. The method for fabricating a floating gate as claimed in claim 7, wherein reactive gas used in the anisotropic etching comprises CF4, CHF3, or a combination thereof.
9. The method for fabricating a floating gate as claimed in claim 1, wherein the material of the second insulating layer is different from that of the first insulating layer.
10. The method for fabricating a floating gate as claimed in claim 1, wherein the second insulating layer is an oxide layer or a Fluorinated silicate glass layer.
11. A method for fabricating a floating gate, comprising:
providing a semiconductor substrate on which a gate dielectric layer, a conducting layer, a first insulating layer, and a patterned hard mask layer with an opening are sequentially formed thereon, such that the opening exposes the first insulating layer;
anisotropically etching the first insulating layer and the conducting layer to form a round-cornered trench using the patterned hard mask layer as a mask, wherein the round-cornered trench does not expose the gate dielectric layer;
removing the patterned hard mask layer;
forming a second insulating layer on the first insulating layer, wherein the round-cornered trench is filled with the second insulating layer, and the material of the second insulating layer is different from that of the first insulating layer;
planarizing the second insulating layer to expose the first insulating layer, such that the second insulating layer in the round-cornered trench remains; and
sequentially etching the first insulating layer and the conducting layer covered by the first insulating layer to expose the gate dielectric layer using the second insulating layer as a mask, wherein the conducting layer covered by the second insulating layer remains as a floating gate.
12. The method for fabricating a floating gate as claimed in claim 11, wherein the gate dielectric layer is a gate oxide layer.
13. The method for fabricating a floating gate as claimed in claim 11, wherein the conducting layer is a polysilicon layer or an exi-silicon layer.
14. The method for fabricating a floating gate as claimed in claim 11, wherein the thickness of the conducting layer is 1000 to 2500 .
15. The method for fabricating a floating gate as claimed in claim 11, wherein the anisotropic etching comprises reactive ion etching or plasma etching.
16. The method for fabricating a floating gate as claimed in claim 15, wherein reactive gas used in the anisotropic etching comprises CF4, CHF3, or a combination thereof.
17. The method for fabricating a floating gate as claimed in claim 15, wherein an angle between the anisotropic etching direction and a line perpendicular to the semiconductor substrate is greater than 0.
18. The method for fabricating a floating gate as claimed in claim 11, wherein the depth of the round-cornered trench is 800 to 2200 .
19. The method for fabricating a floating gate as claimed in claim 11, wherein the second insulating layer is an oxide layer or a Fluorinated silicate glass layer.
20. The method for fabricating a floating gate as claimed in claim 11, wherein the method of planarzing is chemical mechanical polishing.

1. A Voice over IP (VoIP) adapter for POTS phone, comprising:
a POTS phone connector for connecting to a POTS phone;
an IP network interface for connecting to an IP network;
a first signaling receiver for receiving signaling messages from a POTS phone;
a second signaling receiver for receiving signaling messages from the IP network;
a first signaling sender for sending signaling messages to the POTS phone;
a second signaling sender for sending signaling messages to the IP network;
a first media receiver for receiving media data from the POTS phone;
a second media receiver for receiving media data from the IP network;
a first media sender for sending media data in a format that can be recognized by the POTS phone to the POTS phone;
a second media sender for sending media data in the form of appropriate VoIP data packets to the IP network;
a controller for controlling said first and said second signaling sender to send out signaling messages, said first and said second media receiver to receive incoming media streams, and said first and said second media sender to send out media data;
a DTMF (Dual Tone Multiple Frequency) signal detector for detecting DTMF signals in all the signals received from the POTS phone and decoding them; and
a command store for storing a set of digit sequence commands which represent the advanced VoIP functions;
wherein, said controller compares the digit sequence decoded from the DTMF signals with said set of digit sequence commands, and performs the corresponding advanced VoIP function.
2. The VoIP adapter according to claim 1, further comprising:
a media mixer for mixing specified media data streams according to the instructions of said controller.
3. The VoIP adapter according to claim 1, further comprising:
a media data buffer for storing media data.
4. The VoIP adapter according to claim 3, comprising a plurality of media data buffers, each of which stores the media data of one voice channel.
5. The VoIP adapter according to claim 3, characterized in that said controller is implemented by a state machine, which is driven by the events generated by said first signaling receiver, said second signaling receiver or said DTMF signal detector.
6. The VoIP adapter according to claim 5, further comprising:
a voice prompt store for storing pre-recorded voice prompts.
7. A VoIP network device comprising:
a VoIP adapter comprising:
a POTS phone connector for connecting to a POTS phone;
an IP network interface for connecting to an IP network;
a first signaling receiver for receiving signaling messages from a POTS phone;
a second signaling receiver for receiving signaling messages from the IP network;
a first signaling sender for sending signaling messages to the POTS phone;
a second signaling sender for sending signaling messages to the IP network;
a first media receiver for receiving media data from the POTS phone;
a second media receiver for receiving media data from the IP network;
a first media sender for sending media data in a format that can be recognized by the POTS phone to the POTS phone;
a second media sender for sending media data in the form of appropriate VoIP data packets to the IP network;
a controller for controlling said first and said second signaling sender to send out signaling messages, said first and said second media receiver to receive incoming media streams, and said first and said second media sender to send out media data, and wherein said adapter shares the IP network interface with at least one of:
a modem, an access server, a proxy server, a router and an Ethernet switch; and
a DTMF (Dual Tone Multiple Frequency) signal detector for detecting DTMF signals in all the signals received from the POTS phone and decoding them; and
a command store for storing a set of digit sequence commands which represent the advanced VoIP functions;
wherein, said controller compares the digit sequence decoded from the DTMF signals with said set of digit sequence commands, and performs the corresponding advanced VoIP function.
8. A method for a VoIP adapter to perform advanced VoIP functions by a POTS phone, comprising the steps of: using a POTS phone to send a digit sequence command in the form of DTMF signals; detecting and decoding said DTMF signals into the DTMF digit sequence; comparing said DTMF digit sequence with predefined digit sequence commands in a set of digit sequence commands which are stored in a command store and which represent advanced VoIP functions; and if said DTMF digit sequence is a digit sequence command of an advanced VoIP function, performing the advanced VoIP function.
9. The method according to claim 8, comprising the further step of:
sending voice prompts to said POTS phone.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A rigid, closed-cell polyurethane foam having a density of from 2.0 to 4.0 poundscubic foot and a k-factor of less than 0.130 BTU-in.hr.ft.2\xb0 F. at 75\xb0 F. which is produced by reacting
a) an isocyanate-reactive component consisting of:
(1) an toluenediamine-initiated polyether polyol and
(2) a polyester polyol
with
b) a diisocyanate or polyisocyanate

in the presence of
c) 1,1,1,3,3-pentafluoropropane, and
d) a catalyst

in the presence of less than 0.3% by weight of water, based on total foam-forming mixture.
2. The foam of claim 1 in which a)(1) is an ortho-toluene diamine-initiated polyether polyol.
3. The foam of claim 1 in which no water is added to the reaction mixture.
4. A process for the production a rigid, closed-cell polyurethane foam having a density of from 2 to 4 poundscubic foot and a k-factor of less than 0.130 BTU-in.hr.ft.2\xb0 F. at 75\xb0 F. comprising reacting
a) an isocyanate-reactive component consisting of:
(1) an ortho-toluenediamine-initiated polyether polyol and
(2) a polyester polyol
with
b) a diisocyanate or polyisocyanate

in the presence of
c) 1,1,1,3,3-pentafluoropropane,
d) a catalyst, and
e) water.