All The Claims

1. A process for resolving a compound in racemic form comprising the following steps:
a) reacting a compound in racemic form with a resolving agent,
b) obtaining the formation of a diastereoisomeric complex of said resolving agent and an enantiomer of interest,
c) separating the enantiomer of interest from the obtained diastereoisomeric complex,
characterized in that
said resolving agent is a compound selected from the group consisting of:
i) a compound of Formula II
ii) a compound of Formula IV
wherein R1 is a C1-C3 alkyl;
A is a substituent selected from the group consisting of \u2014CH2\u2014, \u2014SO2 and \u2014C\u2550O,
p is 0 or 1, and
CR is a substituent selected from the group consisting of biphenyl and phenyl substituted with one or more halogens,

wherein the resolving agent and the compound in racemic form are in a molar ratio that is below or equal to 1:2 and wherein the compound in racemic form is an acid racemic mixture.
2. The process according to claim 1, wherein if CR is a phenyl substituted with one or more halogens, it is a phenyl disubstituted with chlorine.
3. The process according to claim 1, wherein the group CR is a substituent selected from the group consisting of
4. The process according to claim 3 wherein CR is a substituent selected from the group consisting of a, m, n, t and v.
5. The process according to claim 1, wherein the resolving agent is a compound 11) of Formula XIV
wherein R1 is a C1-C3 alkyl and CR is a substituent selected from the group consisting of biphenyl and phenyl substituted with one or more halogens.
6. The process according to claim 5, wherein the resolving agent is a compound selected from the group consisting of:
N-(1,1\u2032-biphenyl)-4-yl-2-methyl-1,2-ethylen-diamine (compound 5a); and
N-(1,1\u2032-biphenyl)-4-yl-3-methyl-1,2-butylen-diamine (compound 7a).
7. The process according to claim 1 wherein the resolving agent is a compound ii) of Formula XVI
wherein R1 is a C1-C3 alkyl and CR is a substituent selected from the group consisting of biphenyl and phenyl substituted with one or more halogens.
8. The process according to claim 7, wherein the resolving agent is a compound selected from the group consisting of:
N-(1,1\u2032-biphenyl)-4-ylmethyl-3-methyl-1,2-butylen-diamine (compound 8a); and
N-(1,1\u2032-biphenyl)-4-ylmethyl-2-methyl-1,2-ethylen-diamine (compound 6a).
9. The process according to claim 1 wherein the resolving agent is a compound of i) of formula:
wherein p is 0 or 1,
A, if any, is a moiety \u2014CH2\u2014 and
CR is a substituent selected from the group consisting of biphenyl and phenyl substituted with one or more halogens.
10. The process according to claim 9 wherein the resolving agent is a compound selected from the group consisting of
2-amino-N-(1,1\u2032-biphenyl)-4-yl-propionamide (compound 33a);
2-amino-N-(1,1\u2032-biphenyl)-2-yl-propionamide (compound 33b);
2-amino-N-(1,1\u2032-biphenyl)-4-ylmethyl-propionamide (compound 33c);
2-amino-N-(2,3-dichlorophenyl)-1-yl-propionamide (compound 33h);
2-amino-N-(3,5-dichlorophenyl)-1-yl-propionamide (compound 33i);
2-amino-N-(1,1\u2032-biphenyl)-3-yl-propionamide (compound 33l);
2-amino-N-(4-iodo-phenyl)-propionamide (compound 33m);
2-amino-N-(3-iodo-phenyl)-propionamide (compound 33n);
2-amino-N-(4-bromo-phenyl)-propionamide (compound 33t); and
2-amino-N-(3-bromo-phenyl)-propionamide (compound 33v).
11. The process according to claim 1, wherein the resolving agent i) is a compound 1 of formula
wherein p is 0 or 1,
A, if any, is a moiety \u2014CH2\u2014 and
CR is a substituent selected from the group consisting of biphenyl and phenyl substituted with one or more halogens.
12. The process according to claim 11, wherein the resolving agent is a compound selected from the group consisting of
2-amino-3-methyl-N-(1,1\u2032-biphenyl)-4-yl-butyramide (compound 1a)
2-amino-3-methyl-N-(1,1\u2032-biphenyl)-3-yl-butyramide (compound 11);
2-amino-3-methyl-N-(1,1\u2032-biphenyl)-4-ylmethyl-butyramide (compound 1a\u2032)
2-amino-3-methyl-N-(4-iodophenyl)-butyramide (compound 1m);
2-amino-3-methyl-N-(3-iodophenyl)-butyramide (compound 1n);
2-amino-3-methyl-N-(4-bromophenyl)-butyramide (compound 1t); and
2-amino-3-methyl-N-(3-iodophenyl)-butyramide (compound 1v).
13. The process according to claim 1, wherein the process provides for a step d) of recovery of the enantiomer not of interest.
14. The process according to claim 1, wherein the racemic compound to be resolved is 4-tetrahydrofurancarboxylic acid.
15. The process according to claim 14, wherein the resolving agent is the compound 2-amino-N-(1,1\u2032-biphenyl)-4-yl-propionamide (compound 33a).
16. The process according to claim 14 wherein the resolving agent is the compound 2-amino-N-(1,1\u2032-biphenyl)-4-ylmethyl-propionamide (compound 33c).
17. The process according to claim 1, wherein the racemic compound to be resolved is 2-vinyl-cyclopropane-1,1-dicarboxylic acid.
18. The process according to claim 17, wherein the enantiomer of interest is (D)-2-vinyl-cyclopropane-1,1-dicarboxylic acid and the enantiomer not of interest is (L)-2-vinyl-cyclopropane-1,1-dicarboxylic acid.
19. The process according to claim 17, wherein the resolving agent is (3-iodophenyl)-amide of pyrrolidine-2-carboxylic acid (compound 3n).
20. The process according to claim 1, wherein the racemic compound to be resolved is 3-(4-sost-phenyl)-2-cyano-2-methyl-propionic acid, where sost is selected from H and Br.
21. The process according to claim 20, wherein the enantiomer of interest is (L)-3-(4-sost-phenyl)-2-cyano-2-methyl-propionic acid and enantiomer not of interest is (D)-3-(4-sost-phenyl)-2-cyano-2-methyl-propionic acid, wherein sost is selected from H and Br.
22. The process according claim 20, wherein the resolving agent is the compound 2-amino-N-(1,1\u2032-biphenyl)-4-yl-propionamide (compound 33a).

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A solar energy device comprising:
a first prism including a dichroic surface and a reflective surface opposite the dichroic surface;
a first solar cell positioned to receive light rays passing through the dichroic surface; and
a second solar cell positioned to receive light rays from the reflective surface.
2. The solar energy device of claim 1 further comprising:
a third solar cell; and
the first prism is positioned to receive light rays that pass through the third solar cell.
3. The solar energy device of claim 2 further comprising:
the first solar cell receives low energy light rays;
the second solar cell receives medium energy light rays; and
the third solar cell received medium energy light rays.
4. The solar energy device of claim 1, further comprising:
the first prism includes a front surface with negative optical power, and the reflective surface has positive optical power.
5. The solar energy device of claim 1 further comprising:
a lens with positive optical power configured to direct the light rays toward the first prism.
6. The solar energy device of claim 1 further comprising:
a stationary lens configured to direct the light rays toward the first prism.
7. The solar energy device of claim 1 further comprising:
a second reflective surface adjacent the dichroic surface.
8. The solar energy device of claim 1 further comprising:
the first prism is a parallelogram and the dichroic surface is oriented at an angle relative to the light rays.
9. The solar energy device of claim 1 further comprising:
a second prism adjacent to the first prism, the second prism is a right triangle with a hypotenuse that is adjacent to the dichroic surface of the first prism so that the light rays pass through the second prism to the first solar cell.
10. The solar energy device of claim 1 further comprising:
collecting surfaces of the first solar cell and the second solar cell are positioned in the same plane.
11. The solar energy device of claim 1 further comprising:
a first concentrator and a second concentrator,
the solar cells are positioned at a distance from the first and second prisms and receive corresponding light rays from the first and second prisms via the first and second concentrators.
12. A method comprising:
allowing a portion of sunlight at a selected wavelength to pass to a first solar cell through a dichroic surface in a prism; and
directing a remaining portion of the sunlight toward a second solar cell via a reflecting surface in the prism.
13. The method of claim 12 further comprising:
directing a remaining portion of the sunlight in a selected direction via a plurality of the reflecting surfaces in the prism.
14. The method of claim 12 further comprising:
collecting surfaces of the first solar cell and the second solar cell are positioned in the same plane.
15. The method of claim 12 further comprising:
the prism is positioned to receive the sunlight after it passes through a third solar cell.
16. The method of claim 12 further comprising:
the prism includes a front surface with negative optical power, and the reflective surface has positive optical power.
17. A solar energy system comprising:
a plurality of optical prisms;
a first plurality of solar cells configured to receive light rays from a dichroic surface in the optical prisms,
a second plurality of solar cells configured to receive light rays from a reflective surface in the optical prisms, collecting surfaces of the first and second plurality of solar cells are positioned in the same plane; and
a plurality of stationary optical lenses configured to direct the light rays to the optical prisms.
18. The solar energy system of claim 17, further comprising:
the optical prisms include a front surface with negative optical power, and the reflective surface has positive optical power.
19. The solar energy system of claim 17 further comprising:
the optical prisms include a second reflective surface adjacent the dichroic surface; and
the optical prisms have a parallelogram shape and the dichroic surface is oriented at an angle relative to the light rays.
20. The solar energy system of claim 17 further comprising:
a second plurality of prisms adjacent to the first prisms, the second prisms are shaped as a right triangle with a hypotenuse adjacent to the dichroic surface of the first prisms so that the light rays pass through the second prisms to the first solar cells.

1. A wireless LAN system comprising:
a wireless terminal; and
a plurality of base stations connected to each other through a wired LAN,
wherein the plurality of base stations includes a connected base station which is wirelessly connected to the wireless terminal using a first frequency and a non-connected base station which is not wirelessly connected to the wireless terminal,
the wireless terminal includes a probe request message transmission section which changes communication frequency from the first frequency to a second frequency used by the non-connected base station and thereby sends a probe request message to the non-connected base station,
the non-connected base station includes:
a first probe response message transmission section configured to wirelessly send a first probe response message to the wireless terminal using the second frequency in response to reception of the probe request message; and
a second probe response message transmission section configured to send a second probe response message to the connected base station through the wired LAN in response to reception of the probe request message, and
the connected base station includes a third probe response message transmission section configured to send the second probe response message to the wireless terminal using the first frequency, and
the wireless terminal further includes a probe response message reception section configured to change the communication frequency from the second frequency to the first frequency after the probe request message is sent and thereby receive the second probe response message sent by the third probe response message transmission section.
2. The wireless LAN system according to claim 1, wherein
the second probe response message transmission section sends as the second probe response message, a message including a received signal level of the probe request message received by the non-connected base station, and
the wireless terminal further includes a signal level determination section configured to determine the signal level at which the wireless terminal and the non-connected base station wirelessly communicate with each other, based on the received signal level included in the second probe response message.
3. The wireless LAN system according to claim 2, wherein
the signal level determination section includes an estimation section configured to correct the received signal level included in the second probe response message using the signal level of data received by the connected base station from the wireless terminal and the signal level of data received by the wireless terminal from the connected base station and thereby estimate the signal level of data received by the wireless terminal from the non-connected base station, and
the signal level determination section determines the signal level at which the wireless terminal and the non-connected base station wirelessly communicate with each other, based on the signal level estimated by the estimation section.
4. A wireless communication device comprising:
a probe request message transmission section configured to, when the wireless communication device is wirelessly connected to a connected base station using a first frequency, change communication frequency to a second frequency used by a non-connected base station that is not wirelessly connected to the wireless communication device and is connected to the connected base station through a wired LAN and thereby send a probe request message to the non-connected base station; and
a probe response message reception section configured to wirelessly receive from the connected base station using the first frequency, a second probe response message sent by the non-connected base station, which wirelessly sends a first probe response message using the second frequency in response to reception of the probe request message, to the connected base station through the wired LAN in response to reception of the probe request message, wherein
the second probe response message includes a received signal level of the probe request message received by the non-connected base station, and
the wireless communication device further comprises a signal level determination section configured to, based on the received signal level included in the second probe response message, determine the signal level at which the wireless communication device and the non-connected base station wirelessly communicate with each other.
5. The wireless communication device according to claim 4, wherein
the signal level determination section includes an estimation section configured to correct the received signal level included in the second probe response message using the signal level of data received by the connected base station from the wireless communication device and the signal level of data received by the wireless communication device from the connected base station and thereby estimate the signal level of data received by the wireless communication device from the non-connected base station, and
the signal level determination section determines the signal level at which the wireless communication device and non-connected base station wirelessly communicate with each other, based on the signal level estimated by the estimation section.
6. A wireless communication device, comprising:
a probe request message transmission section configured to, when the wireless communication device is wirelessly connected to a connected base station using a first frequency, change communication frequency to a second frequency used by a non-connected base station that is not wirelessly connected to the wireless terminal and is connected to the connected base station through a wired LAN and thereby send a probe request message to a non-connected base station; and
a probe response message reception section configured to receive any one of a first probe response message or a second probe response message, the first probe response message being wirelessly sent by the non-connected base station using the second frequency in response to reception of the probe request message, the second probe response message being sent by the non-connected base station to the connected base station through the wired LAN in response to reception of the probe request message and then wirelessly sent by the connected base station using the first frequency, wherein
the probe response message reception section overwrites the second probe response message with the first probe response message when receiving the first probe response message after receiving the second probe response message.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for treating a material, comprising:
forming an ozone-solvent solution at a first temperature;
passing said ozone-solvent solution through a heater to heat said ozone-solvent solution from said first temperature to form a heated \u2212ozone-solvent solution relative to said first temperature, such that said heated ozone-solvent solution is supersaturated with ozone; and
reacting the supersaturated heated ozone-solvent solution with the material at a second temperature;
wherein the first temperature is less than the second temperature.
2. The method of claim 1, wherein said ozone-solvent solution is formed at said first temperature by dissolving an ozone gas in solvent at said first temperature to form a first concentration of dissolved ozone.
3. The method of claim 1, wherein the second temperature is at least 5 degrees Celsius greater than the first temperature.
4. The method of claim 1, wherein reacting said supersaturated heated ozone-solvent solution with the material comprises applying the supersaturated heated ozone-solvent solution to the material using at least one nozzle.
5. The method of claim 1, wherein reacting the supersaturated heated ozone-solvent solution with the material comprises immersing the material within the supersaturated heated ozone-solvent solution.
6. The method of claim 1, wherein said step of reacting said supersaturated heated ozone-solvent solution with said material has at least one point of reaction, and wherein the heater comprises using a liquid-to-liquid heat exchanger placed just upstream of the at least one point of reaction of said supersaturated heated ozone-solvent solution with said material.
7. The method of claim 1, wherein said step of reacting said supersaturated heated ozone-solvent solution with said material has at least one point of reaction, and wherein the heater comprises an in-line heater placed just upstream of the at least one point of reaction of said supersaturated heated ozone-solvent solution with said material.
8. The method of claim 1, further comprising:
injecting a chemical into said supersaturated heated ozone-solvent solution prior to reacting said supersaturated heated ozone-solvent solution with said material.
9. The method of claim 1, wherein said material comprises a substrate, and wherein the step of reacting said supersaturated heated ozone-solvent solution with said substrate comprises:
spinning said substrate to achieve a rotational speed about an axis; and
dispensing said supersaturated heated ozone-solvent solution over at least a portion of at least one surface of the spinning substrate using at least one nozzle.
10. The method of claim 1, wherein said material comprises a substrate, said method further comprising the step of rinsing the substrate after the substrate is reacted with said supersaturated heated ozone-solvent solution.
11. The method of claim 1, wherein the material comprises a planar substrate selected from the group consisting of semiconductor wafers, flat panel displays, memory discs, substrates for use in an electronic device.
12. The method of claim 1, wherein the material is selected from the group consisting of photoresist, post etch resist residue, post etch residue, anti-reflective coating, organic contamination.
13. The method of claim 1, wherein said step of reacting said supersaturated heated ozone-solvent solution with said material comprises passing said supersaturated heated ozone-solvent solution through an orifice that directs said supersaturated heated ozone-solvent solution toward said material, and wherein the heater is placed just upstream of said orifice.
14. The method of claim 1, further comprising:
injecting a chemical into said ozone-solvent solution prior to passing said ozone-solvent solution through said heater.
15. The method of claim 1, further comprising passing said supersaturated heated ozone-solvent solution through at least one element selected from the group consisting of a back pressure regulator, a pressure dropping nozzle, and a valve, prior to applying the supersaturated heated ozone-solvent solution to the material.
16. The method of claim 2, wherein said supersaturated heated ozone-solvent solution is reacted with the material within a time period after heat is first applied to said ozone-solvent solution in said heater to minimize a decrease in the concentration of the dissolved ozone in the supersaturated heated ozone-solvent solution.
17. The method of claim 3, wherein the first temperature is between 1 and 30 degrees Celsius.
18. The method of claim 3, wherein the first temperature is between 1 and 10 degrees Celsius.
19. The method of claim 3, wherein the second temperature is between 30 and 95 degrees Celsius.
20. The method of claim 3, wherein the second temperature is between 35 and 65 degrees Celsius.
21. The method of claim 8, wherein the chemical comprises a hydroxyl radical scavenger.
22. The method of claim 8, wherein the chemical comprises an element selected from the group consisting of a pH buffer, an acid, and a base.
23. The method of claim 8, wherein the chemical comprises a corrosion inhibitor.
24. The method of claim 8, wherein the chemical comprises a surfactant.
25. The method of claim 9, wherein said at least one nozzle is positioned on said axis.
26. The method of claim 9, wherein a plurality of nozzles are positioned in a plurality of positions over the substrate.
27. The method of claim 9, further comprising the step of moving said nozzle relative to said substrate.
28. The method of claim 9 wherein said at least one nozzle is successively positioned at one or more positions relative to the center of rotation of said substrate.
29. The method of claim 16, wherein the time period is such that the concentration of the supersaturated heated ozone-solvent solution at said second temperature is greater than if said ozone-solvent solution had been formed at said second temperature.
30. The method of claim 16, wherein the time period corresponds to no more than a 20 percent decrease in the concentration of the dissolved ozone in the supersaturated heated ozone-solvent solution from said first concentration.
31. A method for oxidizing a material, comprising:
forming an ozone-solvent solution at a first temperature;
passing the ozone-solvent solution through a heater to heat said ozone-solvent solution from the first temperature to form a supersaturated heated ozone-solvent solution; and
after the step of heating the ozone-solvent solution, reacting the supersaturated heated ozone-solvent solution with the material at approximately a second temperature to oxidize the material wherein the first temperature is less than the second.
32. The method of claim 31, further comprising rinsing the material.
33. The method of claim 31, wherein the second temperature is at least 5 degrees Celsius greater than the first temperature.
34. The method of claim 31, wherein the first temperature is between 1 and 30 degrees Celsius.
35. The method of claim 31, wherein the second temperature is between 30 and 95 degrees Celsius.
36. The method of claim 31, wherein reacting the ozone-solvent solution with the material comprises applying the supersaturated heated ozone-solvent solution to the material.
37. The method of claim 31, further comprising:
injecting a chemical into the supersaturated heated ozone-solvent solution prior to applying the supersaturated heated ozone-solvent solution to the material.
38. The method of claim 31, further comprising:
injecting a chemical into said supersaturated heated ozone-solvent solution prior to reacting said supersaturated heated ozone-solvent solution with said material.
39. The method of any one of claims 1\u201321, claims 17\u20136, claim 8, claims 22\u201325, claims 9\u201312, claims 32\u201337, claim 38, claim 28, claim 13, claims 38\u201329, and claim 15 further comprising:
removing undissolved ozone gas prior to the step of passing said ozone solvent solution through said heater.