All The Claims

1. A vacuum deposition system comprising:
a growth chamber including a first deposition zone configured to deposit a compound semiconductor material doped with a first dopant in a first layer; and a second deposition zone configured to deposit the compound semiconductor material doped with a second dopant in a second layer.
2. The vacuum deposition system of claim 1 further comprising:
an entry load lock;
the growth chamber including
the first deposition zone including
a first source pair including one source selected from a first linear source containing a first material and a first coordinated pair of point sources containing a first material, and a first reservoir source containing a second material, and
a first dopant source, the first deposition zone configured to deposit the compound semiconductor material in the first layer including the first and second materials and the first dopant; and

a second deposition zone including
a second source pair including one source selected from a second linear source containing the first material and a second coordinated pair of point sources containing the first material, and a second reservoir source containing the second material, and
a second dopant source, the second deposition zone configured to deposit the compound semiconductor material in a second layer including the first and second materials and the second dopant;
a conveyance mechanism within the growth chamber configured to transport a wafer platen; and
an exit load lock.
3. The vacuum deposition system of claim 2, wherein the first and second source pairs include first and second linear sources containing the first material.
4. The vacuum deposition system of claim 2, wherein one of the first and second source pairs includes a linear source containing the first material and the other of the first and second source pairs includes a coordinated pair of point sources containing the first material.
5. The vacuum deposition system of claim 2, wherein the first material is gallium, the second material is arsenic, the first dopant is an n-type dopant, and the second dopant is a p-type dopant.
6. The vacuum deposition system of claim 2, further comprising a third deposition zone having at least a third source pair and a third dopant source, the third deposition zone configured to deposit the compound semiconductor material in a third layer including the first and second materials and the third dopant.
7. The vacuum deposition system of claim 1, wherein the growth chamber is maintained at vacuum pressure within the range of about 0.1 to about 0.00001 Torr.
8. The vacuum deposition system of claim 2, wherein the first and second source pairs and first and second dopant sources are configured to distribute material vapor vertically upwards.
9. The vacuum deposition system of claim 2, wherein the conveyance mechanism is configured to transport the wafer platen above first and second linear sources, first and second reservoir sources and first and second dopant sources.
10. The vacuum deposition system of claim 5, wherein the first, second and third deposition zone include a total of at least 10 source pairs and dopant sources configured through the first second and third deposition zones,
11. A process for manufacturing a photovoltaic structure comprising:
transporting a wafer platen supporting at least one downward-facing substrate through a vacuum deposition growth chamber above a source pair; and
operating the source pair to deposit a compound semiconductor material on the downward-facing substrate surface.
12. The process of claim 11, wherein transporting the wafer platen includes transporting the wafer platen at a contact speed through the vacuum deposition growth chamber.
13. The process of claim 11 wherein operating the source pair includes operating the source pair to deposit an n-type gallium arsenide compound material layer.
14. The process of claim 11 wherein operating the source pair includes operating the source pair to deposit a p-type gallium arsenide compound material layer.
15. The process of claim 11, wherein operating the source pair includes operating the source pair to deposit a compound material layer selected from among p-type aluminum gallium arsenide and p-type indium gallium arsenide.
16. The process of claim 11 wherein the step of transporting a wafer platen includes transporting the wafer platen through a first deposition zone including a first source pair and a second deposition zone including a second source pair and a second dopant source.
17. The process of claim 16 wherein the step of operating the source pair includes operating the first source pair to deposit a compound semiconductor material in a first layer, and operating the second source pair to deposit a compound semiconductor material in a second layer.
18. The process of claim 17 wherein the step of operating the first source pair further includes operating the first source pair to deposit an n-type gallium arsenide layer.
19. The process of claim 17 wherein the step of operating the second source pair further includes operating the second source pair to deposit a p-type gallium arsenide layer.
20. A photovoltaic structure manufactured by the process of claim 11.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of providing emergency services to a mobile vehicle, comprising:
via a telematics unit operatively disposed in the mobile vehicle, monitoring a network country code broadcast from a communications network provider;
via a processor operatively associated with the telematics unit, comparing the network country code with a first list of country codes stored in an electronic memory operatively associated with the telematics unit, the first list being associated with a telematics service provider; and
from the comparing, determining where to direct an emergency call by the telematics unit.
2. The method as defined in claim 1 wherein when the network country code is found in the first list, then the method further comprises directing the telematics unit, via the processor, to notify the telematics service provider, via a wireless connection, of a need for emergency services.
3. The method as defined in claim 1 wherein the first list of country codes includes country codes of countries covered by the telematics service provider according to a telematics subscription agreement.
4. The method as defined in claim 1 wherein when the network country code is not found in the first list, the method further comprises:
comparing the network country code with a second list of country codes stored in the electronic memory, the second list being associated with a service provider other than the telematics service provider; and
when the network country code is found in the second list, directing the telematics unit, via the processor, to place an emergency call with the service provider other than the telematics service provider.
5. The method as defined in claim 4 wherein the service provider other than the telematics service provider is an eCall service provider, and wherein the second list of country codes includes country codes of countries covered by the eCall service provider.
6. The method as defined in claim 5 wherein each of the country codes included in the second list has associated therewith at least one of eCall deployment status, a public safety answering point, or contact information for a public safety answering point.
7. The method as defined in claim 4 wherein the first and second lists are provided in a table, and wherein the method further comprises dynamically updating the table by:
receiving, at the telematics service provider, data pertaining to a new country code, a new deployment status, a new public safety answering point, new contact information for a public safety answering point, or combinations thereof from the service provider;
incorporating the data into the table at the telematics service provider, thereby obtaining an updated table;
transmitting, via the wireless connection, the updated table from the telematics service provider to the telematics unit in the mobile vehicle; and
storing the table in the electronic memory operatively associated with the telematics unit.
8. The method as defined in claim 1 wherein the communications network provider is the Global System for Mobile Communications available in the European Union.
9. A method of providing emergency services to a mobile vehicle, comprising:
automatically notifying a telematics service provider, via a wireless connection, of a need for emergency services, the notifying including a request for the emergency services;
receiving a denial of the request for the emergency services; and one of:
i) via a telematics unit operatively disposed in the mobile vehicle, monitoring a network country code broadcast from a communications network provider;
via a processor operatively associated with the telematics unit, comparing the network country code with a list of country codes stored in an electronic memory operatively associated with the telematics unit, the list being associated with a service provider other than the telematics service provider; and
when the network country code is found in the list, directing the telematics unit, via the processor, to automatically place an emergency call with the service provider other than the telematics service provider; or
ii) directing the telematics unit, via the processor associated therewith, to place an emergency call with the service provider other than the telematics service provider, the emergency call including a request for emergency services.
10. The method as defined in claim 9 wherein the service provider other than the telematics service provider is an eCall service provider, and wherein the list of country codes includes country codes of countries covered by the eCall service provider.
11. The method as defined in claim 10 wherein each of the country codes included in the list has associated therewith at least one of an eCall deployment status, a public safety answering point, or contact information for a public safety answering point.
12. The method as defined in claim 9 wherein: the network country code is compared to the list of country codes; the list is provided in a table; and the method further comprises dynamically updating the table by:
receiving, at the telematics service provider, data pertaining to a new country code, a new deployment status, a new public safety answering point, new contact information for a public safety answering point, or combinations thereof from the service provider;
incorporating the data into the table at the telematics service provider, thereby obtaining an updated table;
transmitting, via the wireless connection, the updated table from the telematics service provider to the telematics unit in the mobile vehicle; and
storing the table in the electronic memory operatively associated with the telematics unit.
13. The method as defined in claim 9 wherein the communications network provider is the Global System for Mobile Communications available in the European Union.
14. The method as defined in claim 9 wherein after the request is denied by a mobile network operator, the telematics unit places an emergency call with the service provider other than the telematics service provider, and wherein the method further comprises:
denying, via the mobile operator, the request for emergency services from the service provider other than the telematics service provider; and then
directing the telematics unit, via the processor, to retry an emergency call with the telematics service provider or the other service provider.
15. A system for providing emergency services to a mobile vehicle, comprising:
a communications network provider configured to broadcast a network country code corresponding to a broadcasting area;
a telematics unit operatively disposed in the mobile vehicle, the telematics unit configured to determine a country in which the mobile vehicle is then-currently located by monitoring the broadcast;
an electronic memory operatively connected to the telematics unit, the electronic memory configured to store a table including a first list of country codes, the first list being associated with a telematics service provider; and
a processor operatively connected to the telematics unit, the processor including:
computer readable code for comparing the broadcasted network country code with the first list of country codes; and
computer readable code for directing the telematics unit to contact a particular entity based upon the comparing.
16. The system as defined in claim 15 wherein the processor further includes computer readable code for notify the telematics service provider of a need for emergency service when the network country code is found in the first list.
17. The system as defined in claim 15 wherein the processor further includes:
computer readable code for comparing the network country code with a second list of country codes when the network country code is not found in the first list, the second list of country codes being associated with a service provider other than the telematics service provider; and
computer readable code for directing the telematics unit to place an emergency call with the service provider other than the telematics service provider when the network country code is found in the second list.
18. The system as defined in claim 15 wherein the service provider other than the telematics service provider is an eCall service provider, and wherein the second list of country codes includes country codes of countries covered by the eCall service provider.
19. A system for providing emergency services to a mobile vehicle, comprising:
a communications network provider configured to broadcast a network country code corresponding to a broadcasting area;
a telematics unit operatively disposed in the mobile vehicle, the telematics unit configured to determine a country in which the mobile vehicle is then-currently located by monitoring the broadcast; and
a processor operatively connected to the telematics unit, the processor including one of:
i) computer readable code for comparing the network country code with a list of country codes, the list being associated with a service provider other than a telematics service provider; and
computer readable code for directing the telematics unit to automatically place an emergency call with the service provider other than the telematics service provider when the network country code is found in the list; or
ii) computer readable code for directing the telematics unit to place an emergency call with the service provider other than the telematics service provider, the emergency call including a request for emergency services.
20. The system as defined in claim 19, further comprising an electronic memory operatively connected to the telematics unit, the electronic memory configured to store a table including the list of country codes.
21. The system as defined in claim 19 wherein the service provider other than the telematics service provider is an eCall service provider, and wherein the list of country codes includes country codes of countries covered by the eCall service provider.

1. An alarm unit, comprising:
a flash circuit having a flashtube for generating a flash; and
an application specific integrated circuit (ASIC) coupled to the flash circuit, for triggering the flash, wherein the ASIC controls an energy level of the flashtube via a sense resistor in a current sensing circuit coupled to the ASIC.
2. The alarm unit of claim 1, further comprising:
a switch, coupled to said ASIC, where said switch having a plurality of selectable positions representative of a plurality of intensity settings, wherein said flash has an intensity that is in accordance with a selected position of said switch.
3. The alarm unit of claim 2, wherein said plurality of intensity settings comprise four intensity settings.
4. The alarm unit of claim 1, further comprising:
a current limiting circuit, coupled to said ASIC, where said current limiting circuit limits an input current level when the input current level rises above a set level.
5. The alarm unit of claim 4, wherein said current limiting circuit continuously senses said input current level.
6. The alarm unit of claim 4, wherein the set level is determined by a voltage level on a resistor of the current limiting circuit of the ASIC.
7. The alarm unit of claim 6, wherein the set level is changed by changing the sense resistor.
8. The alarm unit of claim 1, further comprising:
a DC to DC converter, coupled to said ASIC, where said DC to DC boost converter provides over voltage protection.
9. The alarm unit of claim 1, wherein said ASIC is deployed in an eighteen-pin package.
10. The alarm unit of claim 1, wherein said ASIC is deployed in a sixteen-pin package.
11. The alarm unit of claim 1, wherein said ASIC is deployed in an eight-pin package.
12. The alarm unit of claim 1, wherein said flash circuit further comprises a voltage doubler.
13. The alarm unit of claim 1, wherein said ASIC provides a charge cycle that is greater than 8 kilohertz.
14. The alarm unit of claim 1, further comprising:
an audio circuit, coupled to said ASIC, where said audio circuit generates an audio warning signal.
15. The alarm unit of claim 11, wherein said ASIC selects an audio frequency for said audio warning signal.
16. The alarm unit of claim 1, further comprising:
a synchronization detection circuit, coupled to said ASIC, where said synchronization detection circuit receives a synchronization signal to trigger said flash.
17. The alarm unit of claim 1, wherein said ASIC provides a transistor drive capability of greater than 7.3 volts.
18. The alarm unit of claim 1, wherein the flashtube requires approximately 125-250 volts to fire.
19. The alarm unit of claim 1, wherein the sense resistor goes to a pin of the ASIC that monitors and controls the energy level of the flashtube.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for fabricating a semiconductor device, comprising:
providing a first wafer having a first active surface and a first rear surface opposite to the first active surface, the first wafer comprising a first circuit formed therein; wherein the first wafer comprises:
a first semiconductor substrate comprising a plurality of first components therein; and
a first interconnection layer on the first semiconductor substrate, wherein the first interconnection layer is electrically connected to the first components,
providing a second wafer having a second active surface and a second rear surface opposite to the second active surface, the second wafer comprising a second circuit formed therein; wherein the second wafer comprises:
a second semiconductor substrate comprising a plurality of second components therein; and
a second interconnection layer on the second semiconductor substrate, wherein the second interconnection layer is electrically connected to the second components,
bonding the first active surface of the first wafer with the second active surface of the second wafer so as to electrically connecting the first circuit and the second circuit;
thinning the second wafer from the second rear surface; and
forming at least a conductive through via in the second wafer, wherein the conductive through via is electrically connected to the first circuit through the second circuit,
wherein forming the at least a conductive through via in the second wafer comprises:
forming a first side wall portion in the second semiconductor substrate under a first etching condition; wherein the first side wall portion is connected to the second interconnection layer on the second semiconductor substrate, and the first side wall portion comprises a plurality of first scallops;
forming a second wall portion in the second semiconductor substrate under a second etching condition; wherein the second side wall portion is connected to the second rear surface of the second semiconductor substrate, the first side wall portion and the second side wall portion form a through hole; and
forming a conductive post in the through hole to form the conductive through via, wherein the conductive post and the second interconnection layer are electrically connected.
2. The method for fabricating a semiconductor device of claim 1, wherein the first wafer comprises a silicon-on-insulator (SOI) wafer.
3. The method for fabricating a semiconductor device of claim 1, wherein a portion of the second semiconductor substrate is removed when thinning the second wafer from the second rear surface.
4. The method for fabricating a semiconductor device of claim 1, wherein the second wafer comprises:
a detach interface in the second semiconductor substrate, the second components being located at one side of the detach interface.
5. The method for fabricating a semiconductor device of claim 4, wherein a portion of the second semiconductor substrate is detached from the detach interface when thinning the second wafer from the second rear surface.
6. The method for fabricating a semiconductor device of claim 1, wherein the second wafer comprises a silicon-on-insulator (SOI) wafer.
7. The method for fabricating a semiconductor device of claim 6, wherein a portion of the second semiconductor substrate is removed until an insulator of the SOI wafer is exposed when thinning the second wafer from the second rear surface.
8. The method for fabricating a semiconductor device of claim 1, wherein the second semiconductor substrate of the second wafer comprises:
a plurality of isolation structures and a plurality of second components disposed therein, wherein the isolation structures define a plurality of active regions, and the second components are formed in the active regions.
9. The method for fabricating a semiconductor device of claim 8, wherein the conductive through via penatrates one of the isolation structures.
10. The method for fabricating a semiconductor device of claim 8, wherein the through hole penatrates one of the active regions.
11. The method for fabricating a semiconductor device of claim 1 further comprising:
forming a re-distribution wiring layer over the second semiconductor substrate after the conductive through via is formed, wherein the re-distribution wiring layer is electrically connected to the conductive through via.
12. The method for fabricating a semiconductor device of claim 1, wherein the second side wall portion comprises a non-scalloped surface, and an included angle is formed between the non-scalloped surface and the second surface.