All The Claims

What is claimed is:

1. A wide-angle, single focus lens comprising four lenses of negative, positive, negative, and positive refractive power, in sequential order from the object side, wherein:
the first lens is concave on the object side;
the second lens has at least one surface that is aspheric;
the fourth lens is convex on the image side and has at least one of its surfaces aspheric; and
the following conditions are satisfied
2.0<ff1<0.5 0.5<ff2<2.0 0.5<ff4<2.0
where
f is the focal length of the wide-angle, single focus lens,
f1 is the focal length of the first lens in order from the object side,
f2 is the focal length of the second lens in order from the object side, and
f4 is the focal length of the fourth lens, in order from the object side.
2. The wide-angle, single focus lens as described in claim 1, wherein the first, third and fourth lenses are each formed of a single lens element and the following conditions are also satisfied:
Nd1<1.65 Nd3>1.70 Nd4<1.65 Vd3<50 d4>50
where
Nd1 is the index of refraction, at the d line, of the first lens element,
Nd3 is the index of refraction, at the d line, of the third lens element,
Nd4 is the index of refraction, at the d line, of the fourth lens element,
d3 is the Abbe number, at the d line, of the third lens element, and
d4 is the Abbe number, at the d line, of the fourth lens element.
3. A wide-angle, single focus lens comprising four lenses of negative, positive, negative, and positive refractive power, in sequential order from the object side, wherein:
the first lens in order from the object side is concave on the object side;
the second lens in order from the object side has at least one surface that is aspheric; and
the fourth lens in order from the object side is convex on the image side and has at least one surface that is aspheric.
4. The wide-angle, single focus lens as described in claim 3, wherein the following condition is satisfied:
2.0<ff1<0.5
where
f is the focal length of the wide-angle, single focus lens, and
f1 is the focal length of the first lens in order from the object side.
5. The wide-angle, single focus lens as described in claim 3, wherein the following condition is satisfied:
0.5<ff2<2.0
where
f is the focal length of the wide-angle, single focus lens, and
f2 is the focal length of the second lens in order from the object side.
6. The wide-angle, single focus lens as described in claim 3, wherein the following condition is satisfied:
0.5<ff4<2.0
where
f is the focal length of the wide-angle, single focus lens, and
f4 is the focal length of the fourth lens in order from the object side.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. In a plasma reactor chamber containing a wafer support pedestal having an electrode and an RF bias power generator coupled through an impedance match circuit to the input end of a transmission line whose output end is coupled to the electrode, a method of measuring plasma ion energy or wafer voltage of a wafer on the pedestal during plasma processing of the wafer, comprising:
prior to plasma processing of the wafer, determining first and second constants characteristic of the plasma reactor chamber and storing said first and second constants in a memory;
during plasma processing of the wafer performing the following steps:
a. sampling an RF input current and an RF input voltage at said impedance match circuit;
b. multiplying said RF input voltage by said first constant to produce a first product;
c. multiplying said RF input current by said second constant to produce a second product; and
d. computing a sum of said first and second products.
2. The method of claim 1 wherein the group of steps comprising a, b, c and d is repeated periodically whereby said method provides a nearly continuous stream of measurement samples of wafer voltage.
3. The method of claim 1 wherein said first and second constants are functions of the design of the reactor.
4. The method of claim 3 wherein said first and second constants comprise different functions of the RF electrical characteristics of the transmission line.
5. The method of claim 4 wherein said RF electrical characteristics of the transmission line comprise complex loss coefficient, characteristic impedance and length.
6. The method of claim 5 wherein said electrode of said wafer support pedestal comprises a conductive grid coupled to the output end of said transmission line, said method further comprising:
multiplying said sum by a factor comprising an impedance at the wafer on the pedestal, Zwafer, divided by an impedance at the electrode, Zgrid.
7. The method of claim 6 wherein said wafer support pedestal comprises a lower dielectric layer separating said electrode from a base conductor layer and an upper dielectric layer separating said electrode from said wafer, and wherein:
said impedance at the electrode, Zgrid, is computed from electrical characteristics of said lower dielectric layer;
said impedance at the wafer on the pedestal, Zwafer, is computed from electrical characteristics of said upper dielectric layer.
8. In a plasma reactor chamber containing a wafer support pedestal having an internal electrode and an RF bias power generator coupled through an impedance match circuit to the input end of a transmission line whose output end is coupled to the electrode at a junction, a method of measuring plasma ion energy or wafer voltage of a wafer on the pedestal during plasma processing of the wafer, comprising:
prior to plasma processing of the wafer, determining first and second constants characteristic of the plasma reactor chamber and storing said first and second constants in a memory;
during plasma processing of the wafer performing the following steps:
a. sampling an RF input current and an RF input voltage at said impedance match circuit;
b. multiplying said RF input voltage by said first constant to produce a first product;
c. multiplying said RF input current by said second constant to produce a second product; and
d. transforming said RF input current and said RF input voltage at said input end of said transmission line to an electrical quantity at the output end of said transmission line by computing a sum of said first and second products.
9. The method of claim 8 wherein the group of steps comprising a, b, c and d is repeated periodically whereby said method provides a nearly continuous stream of measurement samples of wafer voltage.
10. The method of claim 8 wherein said first and second constants are functions of physical characteristics of the reactor.
11. The method of claim 10 wherein said first and second constants comprise different functions of the RF electrical characteristics of the transmission line.
12. The method of claim 11 wherein said RF electrical characteristics of the transmission line comprise complex loss coefficient, characteristic impedance and length.
13. The method of claim 12 wherein said wafer support pedestal comprises a lower dielectric layer separating said electrode from a base conductor layer and an upper dielectric layer separating said electrode from said wafer, said method further comprising:
transforming said electrical quantity at said junction across said upper dielectric layer by multiplying said sum by a factor comprising an impedance at the wafer on the pedestal, Zwafer, divided by an impedance at the electrode, Zgrid.
14. The method of claim 13 wherein:
said impedance at the electrode, Zgrid, is computed from electrical characteristics of said lower dielectric layer;
said impedance at the wafer on the pedestal, Zwafer, is computed from electrical characteristics of said upper dielectric layer.

1. A method of operating a static random access memory (SRAM) cell comprising first and second cross-coupled logic gates, wherein a first power supply line is connected with the first cross-coupled logic gate, wherein a second power supply line is connected with the second cross-coupled logic gate, the method comprising:
maintaining the first power supply line at a first power level during a first read operation;
permitting the first power supply line to transition from the first power level to a second power level during a first write operation to store a first logic state in the SRAM cell;
maintaining the second power supply line at the first power level during the first read operation; and
maintaining the second power supply line at the first power level during the first write operation.
2. The method of claim 1, wherein the first power level corresponds to a reference voltage and the second power level corresponds to a voltage less than the reference voltage.
3. The method of claim 1, wherein the first power level corresponds to a reference current and the second power level corresponds to a current less than the reference current.
4. The method of claim 1, further comprising maintaining the first power supply line at the first power level during a second write operation to store a second logic state in the SRAM cell.
5. The method of claim 4, further comprising maintaining the second power supply line at the first power level during the second write operation.
6. The method of claim 4, further comprising permitting the second power supply line to transition from the first power level to the second power level during the second write operation.
7. A method of operating a static random access memory (SRAM) cell comprising first and second cross-coupled logic gates, wherein first and second power supply lines are connected with the first cross-coupled logic gate, the method comprising:
maintaining the first power supply line at a first power level during a first read operation;
permitting the first power supply line to transition from the first power level to a second power level during a first write operation to store a first logic state in the SRAM cell;
maintaining the second power supply line at a third power level during the first read operation; and
maintaining the second power supply line at the third power level during the first write operation.
8. The method of claim 7, wherein the first power level corresponds to a first reference voltage and the third power level corresponds to a second reference voltage less than the first reference voltage.
9. The method of claim 7, wherein the first power level corresponds to a reference voltage and the second power level corresponds to a voltage less than the reference voltage.
10. The method of claim 7, wherein the first power level corresponds to a first reference current and the third power level corresponds to a second reference current less than the first reference current.
11. The method of claim 7, wherein the first power level corresponds to a reference current and the second power level corresponds to a current less than the reference current.
12. The method of claim 7, further comprising maintaining the first power supply line at the first power level during a second write operation to store a second logic state in the SRAM cell.
13. The method of claim 12, further comprising maintaining the second power supply line at the third power level during the second write operation.
14. The method of claim 12, further comprising permitting the second power supply line to transition from the third power level to a fourth power level during the second write operation.
15. The method of claim 14, wherein the third power level corresponds to a reference voltage and the fourth power level corresponds to a voltage less than the reference voltage.
16. The method of claim 15, wherein the third power level corresponds to a reference current and the fourth power level corresponds to a current less than the reference current.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An elevator belt for an elevator installation, comprising:
a belt body in which a plurality of tensile carriers formed as strands or cables for transmission of a tension force in a longitudinal direction of the elevator belt is arranged; and
wherein a plurality of discrete profile bodies is embedded in the belt body and extends in the longitudinal direction of the elevator belt, each of said profile bodies is arranged between adjacent tensile carriers and spaces said adjacent tensile carriers from one another, said belt body, said tensile carriers, and said profile bodies are formed from different materials from each other and at least two of said profile bodies having different cross-sectional shapes from each other.
2. The elevator belt according to claim 1 wherein said tensile carriers are arranged in a common plane.
3. The elevator belt according to claim 1 wherein each of said profile bodies has a cross-sectional shape that is one of circular, oval, T-shaped, double T-shaped, U-shaped, triangular and quadrangular.
4. The elevator belt according to claim 1 wherein each said profile body is made from a thermoplastic synthetic material selected from a group consisting of polyamide, polyethylene, polyester, polyethyleneterephthalate, polycarbonate, polypropylene, polystyrol, polyacetal, polybutyleneterephthalate, polyethersulfone, polyphenylenesulfide, polytetrafluoroethylene, polyetheretherketone, polyimide, polyvinylchloride, and polyblends of several thermoplastic synthetic materials.
5. The elevator belt according to claim 1 wherein said belt body is made from an elastomer selected from a group consisting of polyurethane, polychloroprene, natural rubber and ethylene-propylene-diene rubber.
6. The elevator belt according to claim 1 wherein said belt body has a coating on a traction side for engagement with a drive wheel.
7. The elevator belt according to claim 1 wherein said belt body has on a traction side at least one wedge rib for engagement with a complementary groove of a drive wheel.
8. The elevator belt according to claim 1 wherein the belt body has on a rear side, opposite a traction side for engagement with a drive wheel, a back layer made from a thermoplastic synthetic material selected from a group consisting of polyamide, polyethylene, polyester, polyethyleneterephthalate, polycarbonate, polypropylene, polybutyleneterephthalate, polyethersulfone, polytetrafluorethylene, polyvinylchloride and polyblends of a thermoplastic synthetic material.
9. The elevator belt according to claim 8 wherein said tensile carriers and said profile body bear against said back layer of said belt body.
10. An elevator belt for an elevator installation, comprising:
a belt body in which a plurality of tensile carriers formed as strands or cables for transmission of a tension force in a longitudinal direction of the elevator belt is arranged in a common plane; and
wherein a plurality of discrete profile bodies is embedded in the belt body and extends in the longitudinal direction of the elevator belt, each of said profile bodies is arranged between adjacent ones of said tensile carriers and spaces said adjacent tensile carriers from one another, said belt body, said tensile carriers, and said profile bodies are formed from different materials from each other, said profile bodies having circular cross-sectional shapes with at least two of said profile bodies having different diameters from each other.
11. The elevator belt according to claim 10 wherein each said profile body is made from a thermoplastic synthetic material selected from a group consisting of polyamide, polyethylene, polyester, polyethyleneterephthalate, polycarbonate, polypropylene, polystyrol, polyacetal, polybutyleneterephthalate, polyethersulfone, polyphenylenesulfide, polytetrafluoroethylene, polyetheretherketone, polyimide, polyvinylchloride, and polyblends of several thermoplastic synthetic materials.
12. The elevator belt according to claim 10 wherein said belt body is made from an elastomer selected from a group consisting of polyurethane, polychloroprene, natural rubber and ethylene-propylene-diene rubber.
13. The elevator belt according to claim 10 wherein said belt body has a coating on a traction side for engagement with a drive wheel.
14. The elevator belt according to claim 10 wherein said belt body has on a traction side at least one wedge rib for engagement with a complementary groove of a drive wheel.
15. The elevator belt according to claim 10 wherein the belt body has on a rear side, opposite a traction side for engagement with a drive wheel, a back layer made from a thermoplastic synthetic material selected from a group consisting of polyamide, polyethylene, polyester, polyethyleneterephthalate, polycarbonate, polypropylene, polybutyleneterephthalate, polyethersulfone, polytetrafluorethylene, polyvinylchloride and polyblends of a thermoplastic synthetic material.
16. The elevator belt according to claim 15 wherein said tensile carriers and said profile body bear against said back layer of said belt body.
17. An elevator belt for an elevator installation, comprising:
a belt body in which a plurality of tensile carriers formed as strands or cables for transmission of a tension force in a longitudinal direction of the elevator belt is arranged in a common plane; and
wherein a plurality of discrete profile bodies is embedded in the belt body and extends in the longitudinal direction of the elevator belt, each of said profile bodies is arranged between adjacent ones of said tensile carriers and spaces said adjacent tensile carriers from one another, said belt body, said tensile carriers, and said profile bodies are formed from different materials from each other, said belt body having on a rear side, which is opposite a traction side for engagement with a drive wheel, a back layer formed from a thermoplastic synthetic material, and said tensile carriers and said profile bodies bear against said back layer
wherein one of a) at least two of said profile bodies have a circular cross-sectional shape, the shapes being of different diameters from each other, and b) at least two of said profile bodies have different cross-sectional shapes from each other.
18. The elevator belt according to claim 17 wherein each said profile body has a cross-sectional shape that is one of circular, oval, T-shaped, double T-shaped, U-shaped, triangular and quadrangular.
19. The elevator belt according to claim 17 wherein said back layer is made from a thermoplastic synthetic material selected from a group consisting of polyamide, polyethylene, polyester, polyethyleneterephthalate, polycarbonate, polypropylene, polybutyleneterephthalate, polyethersulfone, polytetrafluorethylene, polyvinylchloride and polyblends of a thermoplastic synthetic material.