All The Claims

1. A method for manufacturing a photoelectric conversion device comprising:
forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
forming a first electrode over the first impurity silicon layer;
disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
performing crystal defect repair treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.
2. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein the atmospheric pressure or near atmospheric pressure is in a range of 0.1 atm to 10 atm.
3. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein the crystal defect repair treatment is laser treatment or heat treatment using a furnace.
4. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein the crystal defect repair treatment is RTA treatment or flash lamp irradiation.
5. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein the silane-based gas is silane, disilane, or trisilane.
6. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein a rare gas or hydrogen is added to the source gas.
7. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein the fragile layer is formed by irradiating the single crystal silicon substrate with ions or cluster ions through the one surface of the single crystal silicon substrate.
8. The method for manufacturing a photoelectric conversion device according to claim 1,
wherein a region of the single crystal silicon layer which is epitaxially grown is an intrinsic semiconductor.
9. The method for manufacturing a photoelectric conversion device according to claim 1 further comprising:
forming a third impurity silicon layer having one conductivity type over the second impurity silicon layer;
forming a non-single-crystal silicon layer over the third impurity silicon layer; and
forming a fourth impurity silicon layer having a conductivity type opposite to the one conductivity type over the non-single-crystal silicon layer.
10. The method for manufacturing a photoelectric conversion device according to claim 1, wherein the first electrode is in contact with a surface of the supporting substrate.
11. The method for manufacturing a photoelectric conversion device according to claim 7,
wherein the ions or cluster ions with which the single crystal silicon substrate is irradiated include high proportion of H3+ ions.
12. A method for manufacturing a photoelectric conversion device comprising:
forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
forming a first electrode over the first impurity silicon layer;
disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
performing crystal defect elimination treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.
13. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein the atmospheric pressure or near atmospheric pressure is in a range of 0.1 atm to 10 atm.
14. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein the crystal defect elimination treatment is etching treatment.
15. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein the crystal defect elimination treatment is CMP treatment.
16. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein the silane-based gas is silane, disilane, or trisilane.
17. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein a rare gas or hydrogen is added to the source gas.
18. The method for manufacturing a photoelectric conversion device according to claim 12, wherein the fragile layer is formed by irradiating the single crystal silicon substrate with ions or cluster ions through the one surface of the single crystal silicon substrate.
19. The method for manufacturing a photoelectric conversion device according to claim 12,
wherein a region of the single crystal silicon layer which is epitaxially grown is an intrinsic semiconductor.
20. The method for manufacturing a photoelectric conversion device according to claim 12 further comprising:
forming a third impurity silicon layer having one conductivity type over the second impurity silicon layer;
forming a non-single-crystal silicon layer over the third impurity silicon layer; and
forming a fourth impurity silicon layer having a conductivity type opposite to the one conductivity type over the non-single-crystal silicon layer.
21. The method for manufacturing a photoelectric conversion device according to claim 12, wherein the first electrode is in contact with a surface of the supporting substrate.
22. The method for manufacturing a photoelectric conversion device according to claim 18,
wherein the ions or cluster ions with which the single crystal silicon substrate is irradiated include high proportion of H3+ ions.
23. A method for manufacturing a photoelectric conversion device comprising:
forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
forming a first electrode over the first impurity silicon layer;
forming an insulating layer over the first electrode;
disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
performing crystal defect repair treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.
24. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein the atmospheric pressure or near atmospheric pressure is in a range of 0.1 atm to 10 atm.
25. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein the crystal defect repair treatment is laser treatment, or heat treatment using a furnace.
26. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein the crystal defect repair treatment is RTA treatment or flash lamp irradiation.
27. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein the silane-based gas is silane, disilane, or trisilane.
28. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein a rare gas or hydrogen is added to the source gas.
29. The method for manufacturing a photoelectric conversion device according to claim 23, wherein the fragile layer is formed by irradiating the single crystal silicon substrate with ions or cluster ions through the one surface of the single crystal silicon substrate.
30. The method for manufacturing a photoelectric conversion device according to claim 23,
wherein a region of the single crystal silicon layer which is epitaxially grown is an intrinsic semiconductor.
31. The method for manufacturing a photoelectric conversion device according to claim 23 further comprising:
forming a third impurity silicon layer having one conductivity type over the second impurity silicon layer;
forming a non-single-crystal silicon layer over the third impurity silicon layer; and
forming a fourth impurity silicon layer having a conductivity type opposite to the one conductivity type over the non-single-crystal silicon layer.
32. The method for manufacturing a photoelectric conversion device according to claim 23, wherein the insulating layer is in contact with a surface of the supporting substrate.
33. The method for manufacturing a photoelectric conversion device according to claim 29,
wherein the ions or cluster ions with which the single crystal silicon substrate is irradiated include high proportion of H3+ ions.
34. A method for manufacturing a photoelectric conversion device comprising:
forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;
forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;
forming a first electrode over the first impurity silicon layer;
forming an insulating layer over the first electrode;
disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;
bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;
forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;
performing crystal defect elimination treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.
35. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein the atmospheric pressure or near atmospheric pressure is in a range of 0.1 atm to 10 atm.
36. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein the crystal defect elimination treatment is etching treatment.
37. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein the crystal defect elimination treatment is CMP treatment.
38. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein the silane-based gas is silane, disilane, or trisilane.
39. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein a rare gas or hydrogen is added to the source gas.
40. The method for manufacturing a photoelectric conversion device according to claim 34, wherein the fragile layer is formed by irradiating the single crystal silicon substrate with ions or cluster ions through the one surface of the single crystal silicon substrate.
41. The method for manufacturing a photoelectric conversion device according to claim 34,
wherein a region of the single crystal silicon layer which is epitaxially grown is an intrinsic semiconductor.
42. The method for manufacturing a photoelectric conversion device according to claim 34 further comprising:
forming a third impurity silicon layer having one conductivity type over the second impurity silicon layer;
forming a non-single-crystal silicon layer over the third impurity silicon layer; and
forming a fourth impurity silicon layer having a conductivity type opposite to the one conductivity type over the non-single-crystal silicon layer.
43. The method for manufacturing a photoelectric conversion device according to claim 34, wherein the insulating layer is in contact with a surface of the supporting substrate.
44. The method for manufacturing a photoelectric conversion device according to claim 40,
wherein the ions or cluster ions with which the single crystal silicon substrate is irradiated include high proportion of H3+ ions.
45. A method for manufacturing a photoelectric conversion device comprising:
preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer;
performing crystal defect repair treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown.
46. The method for manufacturing a photoelectric conversion device according to claim 45,
wherein the crystal defect repair treatment is laser treatment or heat treatment using a furnace.
47. The method for manufacturing a photoelectric conversion device according to claim 45,
wherein the crystal defect repair treatment is RTA treatment or flash lamp irradiation.
48. A method for manufacturing a photoelectric conversion device comprising:
preparing a single crystal silicon layer over a stack of a substrate, a first electrode, and a first impurity silicon layer;
performing crystal defect elimination treatment of the single crystal silicon layer;
forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; and
forming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxially grown.
49. The method for manufacturing a photoelectric conversion device according to claim 48,
wherein the crystal defect elimination treatment is etching treatment.
50. The method for manufacturing a photoelectric conversion device according to claim 48,
wherein the crystal defect elimination treatment is CMP treatment.
The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. A method of testing a device under test, which is adapted to transmit a digital data signal and a clock signal, the data signal being related to the clock signal, to a test device, comprising the steps of:
sampling within one clock cycle of a local clock signal the data signal and the clock signal by applying a number of strobes for obtaining a corresponding number of bit values each for the data signal and for the clock signal, the strobes having different phase offsets with respect to the local clock signal,
deriving first comparison results for the sampled bit values of the data signal by comparing the sampled bit values of the data signal each with an expected data bit value according to expected data,
deriving second comparison results for the sampled bit values of the clock signal by comparing the sampled bit values of the clock signal each with an expected clock bit value,
deriving combined comparison results by applying logical operations each on pairs of corresponding first comparison result and second comparison result, and
deriving a test result for the data of said clock cycle based on the combined comparison results.
2. The method of claim 1, wherein the logical operation is one of a Boolean OR operation and an Exclusive OR operation and the step of deriving the test result comprises one of:
(a) checking, whether for each clock cycle there exists at least one strobe, which yields a combined pass result or
(b) checking, whether for each clock cycle there exist only strobes, which yield a combined pass result.
3. The method of claim 1, wherein the device under test is accepted or rejected in response to test results of a plurality of clock cycles of the test device clock.
4. The method of claim 1, wherein the clock signal and the data signal are sampled sequentially with respect to each strobe.
5. The method of claim 1, wherein
the test device comprises a plurality of data pins, which provide each a data signal and an associated clock pin providing said clock signal,
performing the logical operation to combine each of the first comparison result with the corresponding second comparison result to determine corresponding combined comparison results, and
deriving a test result for each of the data of said clock cycle based on each of the combined comparison results.
6. The method of claim 1, wherein the test device first inputs a stimulus signal comprising data andor instructions into the device under test, such that said device under test generates the data signal and the clock signal in response to said input stimulus signal.
7. The method of claim 1, wherein a clock signal is transmitted by a source synchronous interface of the device under test, such that said clock signal shows transition edges with a constant phase offset with respect to transition edges of its associated data signal transition edges.
8. The method of claim 7, wherein the data signal is sampled according to first strobes and the clock signal is sampled according to second strobes, both strobe sets or offset to each other by a defined phase value.
9. The method of claims 1, wherein a pass result of the comparison results is represented by a logical \u201c0\u201d, and a fail result is represented by a logical \u201c1\u201d, and the logical operation, which is applied for receiving the combined comparison result is one of: a logical OR or a logical NOR or a logical \u201cexclusive OR\u201d (EXOR) operation.
10. The method of claim 9, wherein the step of deriving combined comparison results further comprises:
performing a second logical operation on the plurality of combined comparison results, which refer to different strobes, in order to obtain the test result for the clock cycle.
11. The method of claim 10, further comprising:
calculating one final accept or reject decision for the device by performing a third logical operation on the test results of a plurality of clock cycles.
12. The method of claim 11, comprising the further steps of:
determining cycles of the data signal, where no transition of the bit information with respect to an adjacent previous cycle occurs, and
masking any comparison result obtained with respect to the determined cycles prior to performing the second or third logical operation.
13. The method of claim 1 wherein the strobes are equally spaced with respect to their phase offset with respect to the clock signal of the test device.
14. A software program or product, preferably stored on a data carrier, for controlling the executing the method of claim 1, when run on a data processing system of the test device.
15. A test device testing a device under test, which is adapted to transmit a digital data signal and a clock signal, the data signal being related to the clock signal comprising:
a sampler sampling within one clock cycle of a clock signal of a local clock the data signal and the clock signal by applying a number of strobes for obtaining a corresponding number of bit values each for the data signal and for the clock signal, each of the strobes having a different phase offset with respect to the clock signal,
a comparator deriving first comparison results for the sampled bit values of the data signal by comparing the sampled bit values of the data signal each with an expected data bit value according to expected data, and deriving second comparison results for the sampled bit values of the clock signal by comparing the sampled bit values of the clock signal each with an expected clock bit value,
a processor deriving combined comparison results by applying logical operations each on pairs of corresponding first comparison result and second comparison result, and for deriving a test result for the data of said clock cycle based on the combined comparison results.

1. A method for selecting a word to be defined using an electronic dictionary function in a mobile communication terminal, comprising:
selecting a word in a displayed text document in response to a first input;
displaying the selected word in a search window;
searching for the displayed word in response to a request to search for the displayed word;
displaying information resulting from the search; and
terminating display of the information and displaying the text document.
2. The method of claim 1, wherein selecting a word in a displayed text document in response to a user input comprises designating a word including a word to search for as a block in the displayed text document.
3. The method of claim 2, wherein designating a word including a word to search for as a block in the displayed text document comprises controlling movement of a preset selection box within the text document.
4. The method of claim 1, wherein displaying the selected word in a search window comprises generating and activating the search window.
5. The method of claim 4, further comprising extracting a word to search for after activating the search window.
6. The method of claim 5, wherein extracting a word to search for comprises deleting a character in the displayed word in response to a second input.
7. The method of claim 5, wherein extracting a word to search for comprises moving a cursor in the search window in response to a second input and deleting a character in the displayed word at a position corresponding to the cursor position in response to a third input.
8. The method of claim 4, wherein displaying the selected word in a search window comprises displaying, after the search window is activated, the word according to key input of a user, and
wherein searching for the displayed word comprises searching for a meaning of the input word in an electronic dictionary data storage unit according to user request.
9. The method of claim 1, wherein terminating display of the information and displaying the text document comprises returning to a text document mode after the mobile communication terminal uses an electronic dictionary function.
10. The method of claim 2, wherein designating a word including a word to search for as a block in the displayed text document comprises dividing words included in the text document into a word that can be searched for using an electronic dictionary and a word that cannot be searched for using the electronic dictionary.
11. The method of claim 5, wherein extracting a word to search for comprises adding a character to the displayed word in response to a second input.
12. The method of claim 11, wherein extracting a word to search for comprises moving a cursor in the search window in response to a second input and adding a character to the displayed word at a position corresponding to the cursor position in response to a third input.
13. A method for selecting a word to be defined using an electronic dictionary function in a mobile communication terminal, comprising:
selecting a word in a displayed text document in response to a first input;
displaying the selected word in a search window;
searching for the displayed word in response to a request to search for the displayed word; and
displaying information resulting from the search.
14. A mobile communication terminal with an electronic dictionary function, comprising:
a display unit to display a text document;
a search window processor to display a word selected from the displayed text document in a search window in response to a first input;
an electronic dictionary data storage unit to store a lexical meaning of the word;
an electronic dictionary data processor to search for the word displayed in the search window in the electronic dictionary data storage unit; and
a controller to output the lexical meaning of the word found in the electronic dictionary data storage unit to the display unit.
15. The mobile communication terminal of claim 14, wherein the search window processor designates the word selected from the displayed text document as a block using a selection box, and moves the selection box according to a second input.
16. The mobile communication terminal of claim 14, wherein the search window processor designates the word selected from the displayed text document as a block using a selection box and deletes a character of the word displayed in the search window, thereby extracting a word to search for.
17. The mobile communication terminal of claim 14, wherein the search window processor designates the word selected from the displayed text document as a block using a selection box and moves the selection box or deletes a character of the word displayed in the search window according to a second input, thereby extracting a word to search for.
18. The mobile communication terminal of claim 14, wherein the electronic dictionary data storage unit stores the lexical meaning of the word in a database.
19. The mobile communication terminal of claim 14, further comprising an input unit comprising at least one of a key pad and a touch screen.
20. The mobile communication terminal of claim 14, wherein the search window processor generates a word to search for in the search window.

The claims below are in addition to those above.
All refrences to claims which appear below refer to the numbering after this setence.

1. (canceled)
2. A dryer barrel basket comprising:
a tubular shaped body configured for rotation about an axis, wherein the tubular shaped body comprises a surface comprising a plurality of openings that are sized and configured to allow fluid to pass through the surface during spin drying;
a bottom door of the tubular shaped body;
an opening mechanism for opening the bottom door; and
an angled wall located internal to the tubular shaped body, wherein the angled wall is configured to form a void configured to accommodate a portion of the bottom door as the bottom door moves from a closed first position to an open second position while pivoting on a hinge axis.
3. The dryer barrel basket of claim 2, further comprising a locking mechanism coupled to the opening mechanism.
4. The dryer barrel basket of claim 3, wherein the locking mechanism is self-locking
5. The dryer barrel basket of claim 2, wherein the opening mechanism is recessed from a side surface of the tubular shaped body.
6. The dryer barrel basket of claim 2, wherein the angled wall is configured to prevent a substantially even distribution of a material over a top surface of the bottom door.
7. The dryer barrel basket of claim 2, further comprising a hinge coupling the bottom door and the tubular shaped body, wherein the bottom door pivots on the hinge axis.
8. The dryer barrel basket of claim 7, wherein a small segment of the bottom door is located on one side of the hinge axis and a large segment of the bottom door as compared with the small segment is located on another side of the hinge axis.
9. The dryer barrel basket of claim 2, wherein the opening mechanism is positioned on a side surface of the tubular shaped body.
10. The dryer barrel basket of claim 2, wherein the movement of the bottom door moving from a closed position to an open position swings away from a fixed location of the opening mechanism.
11. The dryer barrel basket of claim 2, wherein the angled wall is configured to direct a material within the dryer barrel basket away from the hinge axis of the bottom door.
12. A method comprising:
operating an opening mechanism of a dryer barrel basket configured for rotation about an axis, wherein a side surface of the dryer barrel basket comprises a surface comprising a plurality of openings that are sized and configured to allow fluid to pass through the surface during spin drying,
wherein the operating of the opening mechanism causes a locking mechanism to disengage, wherein a hinged bottom door opens in response to the disengaging,
wherein the dryer barrel basket comprises an internal angled wall, and
wherein the internal angled wall is configured to direct a material within the dryer barrel basket away from a hinge axis of the hinged bottom door.
13. The method of claim 12, wherein the opening mechanism is located on a tubular shaped side surface of the dryer barrel basket.
14. The method of claim 12, wherein the internal angled wall is configured to form a void, wherein the void is configured to accommodate a portion of the hinged bottom door as the hinged bottom door moves from a closed first position to an open second position while pivoting on the hinge axis.
15. A dryer barrel basket comprising:
a tubular shaped body comprising a plurality of openings that are sized and configured to allow fluid to pass through a surface of the tubular shaped body during spin drying, wherein the tubular shaped body is configured for rotation about an axis;
a bottom door;
a hinge connecting the bottom door and the tubular shaped body; and
an angled wall located internal to the tubular shaped body in a bottom portion thereof, and at least partially above a portion of the bottom door is configured to direct a material within the dryer barrel basket away from a hinge axis of the bottom door.
16. The dryer barrel basket of claim 15, further comprising an opening mechanism positioned on a side surface of the tubular shaped body for opening the bottom door; and
a locking mechanism for securing the bottom door in a closed position, wherein the opening mechanism is coupled to the locking mechanism.
17. The dryer barrel basket of claim 16, wherein the opening mechanism is recessed from the side surface of the tubular shaped body.
18. The dryer barrel basket of claim 16, wherein the movement of the bottom door moving from the closed position to an open position swings away from a location of the opening mechanism.
19. The dryer barrel basket of claim 15, wherein a small segment of the bottom door is located on one side of the hinge axis and a large segment of the bottom door as compared with the small segment is located on another side of the hinge axis.
20. The dryer barrel basket of claim 15, wherein the dryer barrel basket is configured to be used within a spin dryer.
21. The dryer barrel basket of claim 15, wherein the angled wall is configured to prevent a substantially even distribution of the material over a top surface of the bottom door.