1. A method of fabricating a transistor device, comprising the steps of:
providing a substrate
forming an upper silicon layer mesa island at a surface of the substrate:
forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into graphene layers;
after forming the graphene layers, forming sourcedrain regions by depositing sourcedrain material on opposite longitudinal ends of the graphene layers and ion implanting the sourcedrain material;
forming gate oxide between the sourcedrain regions on the graphene layers; and
forming gate material over the gate oxide.
2. The method of claim 1, wherein the substrate is a SOI substrate.
3. The method of claim 2 further comprising the step of performing a threshold implant on the SOI substrate.
4. A method for semiconductor processing, comprising the steps of:
(a) providing an SOI substrate
(b) performing a threshold implant on the SOI substrate
(c) forming an upper silicon layer mesa island at a surface of the SOI substrate:
(d) forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into said graphene layers;
(e) after forming the graphene layers, forming sourcedrain regions by depositing sourcedrain material on opposite longitudinal ends of the graphene layers and ion implanting the sourcedrain material;
(f) forming gate oxide between the sourcedrain regions on the graphene; and
(g) forming gate material over the gate oxide;
(h) creating a transistor edge;
(i) depositing dielectric onto the transistor edge;
repeating (a) through (i) a predetermined number of times; and
performing back end processing.
5. The method of claim 4, wherein the process of forming the mesa island comprises:
depositing, patterning and etching mesa forming photoresist;
forming the upper silicon layer mesa island using a mesa etch; and
removing the mesa forming photoresist.
6. The method of claim 4, wherein the threshold implant on the SOI substrate comprises:
depositing, patterning and etching threshold implant photoresist;
performing the optional threshold implant; and
removing the threshold implant photoresist.
7. The method of claim 4, wherein the carbonizing silicon layer into SiC utilizing a gaseous source comprises:
placing the SOI substrate in a reactor consisting of a quartz vessel and a graphite body therein;
heating the graphite body to a specified temperature; and
passing a gaseous mixture over the SOI substrate.
8. The method of claim 4, wherein the gaseous mixture comprises:
0.1 to 5% by volume hydrocarbons;
0.01 to 1% by volume water or water-releasing compounds;
0.1 to 5% by volume silicon halides or organosilanes; and hydrogen.
9. The method of claim 8, wherein the hydrocarbons comprise:
aliphatic hydrocarbons, alkanes and alkenes with 1-8 C atoms, methane, ethane, ethylene, propane, propylene, butane and mixtures thereof.
10. The method of claim 8, wherein the silicon halides comprise:
silicon bromides, silicon iodides, SiCl4, SiHCl3 and SiH2Cl2 and mixtures thereof.
11. The method of claim 8, wherein the organosilanes comprise:
alkylsilanes, SiR4, SiR3Cl, SiR2Cl2 and SiRCl3 and mixtures thereof, wherein R represents alkyl radicals with 1 to 4 C atoms or hydrogen.
12. The method of claim 8, wherein the water-forming compounds comprise:
oxygen containing carbon compounds, alcohols, aldehydes, carboxylic acids, CO2, oxygen-containing nitrogen compounds, nitrogen oxides, N2O, NO and mixtures thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A display system, comprising:
a rotational actuator that defines a rotational axis;
an image shifter mounted on said rotational actuator for rotation about said rotational axis, said image shifter including an image shifting surface positioned non-perpendicular to said rotational axis; and
a light modulator that projects a modulated image to said image shifting surface.
2. The system of claim 1 wherein said rotational actuator includes a shaft that defines said rotational axis, and wherein said image shifter is mounted on said shaft.
3. The system of claim 1 wherein said image shifter is chosen from one of a reflective image shifter and a transmissive image shifter.
4. The system of claim 1 wherein said image shifting surface is positioned at an angle theta 1 with respect to a plane positioned perpendicular to said rotational axis, wherein an amount of deflection (D) of a light image by said image shifter is described by the equation D=2(theta 1)LK cos(theta 2) wherein L is a distance to an image plane from said image shifting surface, K is equal to 1.0 when there is no projection lens, and theta 2 is equal to an angle of rotation of said image shifting surface about said rotational axis.
5. The system of claim 1 further comprising a light source that projects light to said image shifter at an angle in a range of five to eighty-five degrees from said rotational axis.
6. The system of claim 1 wherein said image shifter is chosen from one of a reflective mirror and a transmissive glass member.
7. The system of claim 1 wherein rotational movement of said rotational actuator rotates said image shifting surface so as to shift a first image through at least four different positions to produce a second image having a resolution at least four times greater than a resolution of said first image.
8. The system of claim 1 wherein said rotational actuator rotates in one of a constant velocity profile and an incremental step velocity profile during use of said system.
9. The system of claim 2 wherein said shaft is rigid.
10. The system of claim 1 wherein said image shifter is mounted only to said rotational actuator.
11. The system of claim 1 wherein said rotational actuator is chosen from one of a dc motor and a stepper motor.
12. The system of claim 7 wherein said four different positions of said first image are each shifted with respect to one another a distance substantially equal to one half of a width of one pixel of said image.
13. A method of making a display system, comprising mounting an optical image shifter on a single rotating shaft such that an image shifting surface of said optical image shifter is positioned non-perpendicular to a rotational axis of said rotating shaft and is positioned to receive a modulated image from an image modulator.
14. The method of claim 13 further comprising positioning a light source with respect to said optical image shifter such that light emitted from said light source is shifted by said image shifter and forwarded to an imaging region.
15. The method of claim 14 wherein said optical image shifter is positioned at an angle theta with respect to a plane perpendicular to said rotational axis, and wherein said light shifted by said image shifter is displaced by an amount substantially equal to two times theta.
16. A method of using a display system, comprising:
rotating a shaft of a single actuator having an optical image shifter mounted on said shaft, wherein an image shifting surface of said optical image shifter is positioned non-perpendicular to a rotational axis of said shaft;
projecting a modulated light image to said image shifting surface from a light modulator; and
projecting a shifted light image from said image shifting surface.
17. The method of claim 16 wherein said shifted light image has a resolution higher than said modulated light image.
18. The method of claim 16 wherein said rotating a shaft comprises rotating in a manner chosen from one of rotating said shaft continuously and rotating said shaft between a plurality of dwell positions.
19. The method of claim 16 wherein said image shifting surface defines a plurality of pixels, and wherein each of said plurality of pixels is moved through a circular path around said rotational axis as said image shifting surface is rotated.
20. The method of claim 16 wherein said projecting a shifted light image is chosen from one of transmitting said light image and reflecting said light image.