All The Claims

1. A retrofit luminaire assembly adapted for downward illumination and having a housing with inwardly-directed ledges near the lower edges of the housing, comprising:
at least two support brackets secured to at least one of the ledges;
a face plate removably secured to the brackets on the lower side of the housing, the face plate adapted to hold lighting fixture components; and
first and second hanging tethers each attached at its proximal end to a separate one of the support brackets along one side of the housing, the first and second tethers being secured at their distal ends to opposite ends of one side of the faceplate,

wherein when the face plate is removed from the brackets, the face plate hangs freely held by the tethers to allow free access to the inside of the luminaire.
2. A method of installing a retrofit luminaire assembly adapted for downward illumination and having a housing with inwardly-directed ledges near the lower edges of the housing, the method comprising the steps of:
providing at least two support brackets;
securing the two support brackets to at least one ledge;
providing a face plate adapted to hold lighting fixture components;
providing first and second hanging tethers each attached at its proximal end to a separate one of the support brackets along one side of the housing, the first and second tethers being secured at their distal ends to opposite ends of one side of the faceplate; and
securing the face plate to the brackets with the tethers such that the face plate hangs freely without further support during installation.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A process for preparing a compound of formula (I):
or a pharmaceutically acceptable salt thereof, the process comprising:
(a) reacting a compound of formula (II):
wherein:
each R1 is independently H or a protecting group,
with a compound of formula (III):
to produce a compound of formula (IV):
(b) selectively protecting the compound of formula (IV) to prepare a compound of formula (V):
(c) phosphorylating the compound of formula (V) to prepare a compound of formula (VI):
(d) oxidizing the compound of formula (VI) to prepare a compound of formula (VII):
and (e) deprotecting the compound of formula (VII) to prepare the compound of formula (I).
2. The process of claim 1, wherein the pharmaceutically acceptable salt is an HCl salt.
3. The process of claim 1, wherein the compound of formula (II) is:
4. The process of claim 1, wherein the compound of formula (III) is a protected or unprotected galactose, mannose, glucose, or gulose.
5. The process of claim 1, wherein the compound of formula (III) is:
6. The process of claim 1, wherein two adjacent R1 groups come together to form an isopropylidine acetal or benzylidine acetal moiety.
7. The process of claim 1, wherein step (a) comprises reacting the compound of formula (II) and the compound of formula (III) in the presence of a hydrazine.
8. The process of claim 7, wherein the hydrazine is selected from the group consisting of phenylhydrazines and alkylhydrazines.
9. The process of claim 8, wherein the hydrazine is phenylhydrazine.
10. The process of claim 1, wherein the phosphorylation of step (c) comprises reacting the compound of formula (V) with a P(V) phosphorylating agent.
11. The process of claim 10, wherein the P(V) phosphorylating agent is selected from the group consisting of: POCl3; H3PO4; PO(OBn)xCl3-x; Cl3CCH2OP(O)Cl2; and (BnO)2P(O)OP(O)(OBn)2.
12. The process of claim 10, wherein the P(V) phosphorylating agent is POCl3.
13. The process of claim 1, wherein the phosphorylation of step (c) comprises reacting the compound of formula (V) with a P(III) phosphitylating agent.
14. The process of claim 13, wherein the P(III) phosphitylating agent is selected from the group consisting of: P(OCH2CH2CN)2Cl; P(OCH2CH2CN)(NPr2-i)Cl; and cyanoethyl-O\u2014PN(i-Pr)2)2.
15. The process of claim 13, wherein step (c) further comprises oxidizing the resulting phosphite to prepare the phosphate of compound (VI).
16. The process of claim 1, wherein step (d) comprises reacting the compound of formula (VI) with an oxidizing agent selected from the group consisting of: RuO4; Dess-Martin; DMSOtriflic anhydride; and PDC.
17. The process of claim 1, wherein the deprotection of the compound of formula (VII) is performed under anaerobic conditions.
18. The process of claim 1, wherein the compound of formula (IV) is:
19. The process of claim 1, wherein the compound of formula (V) is:
20. The process of claim 1, wherein the compound formula (VI) is:
21. The process of claim 1, wherein the compound of formula (VII) is:
22. The process of claim 1, wherein the process further comprises formulating the compound of formula (I) as a pharmaceutical composition.
23. A compound of formula (IV):
or a pharmaceutically acceptable salt form thereof, wherein:
each R1 is independently H or a protecting group.
24. A compound of formula (V):
or a pharmaceutically acceptable salt form thereof, wherein:
each R1 is independently H or a protecting group.
25. A compound of formula (VI):
or a pharmaceutically acceptable salt form thereof, wherein:
each R1 is independently H or a protecting group, and at least R1 is a protecting group.
26. A compound of formula (VII):
or a pharmaceutically acceptable salt form thereof, wherein:
each R1 is independently H or a protecting group; and at least one R1 is a protecting group.
27. A process for preparing a compound of formula (XIII):
or a pharmaceutically acceptable salt form thereof, the process comprising:
(a) reacting a compound of formula (II):
with a compound of formula (III):
to produce a compound of formula (IV):
wherein:
each R1 is independently H or a protecting group;
(b) selectively protecting the compound of formula (IV) to prepare a compound of formula (V):
(c) phosphorylating the compound of formula (V) to prepare a compound of formula (VI):
(d) oxidizing the compound of formula (VI) to prepare a compound of formula (XIV):
and (e) deprotecting the compound of formula (XIV) to prepare the compound of formula (XIII).
28. The process of claim 27, wherein the pharmaceutically acceptable salt is an HCl salt.
29. The process of claim 27, wherein the compound of formula (II) is:
30. The process of claim 27, wherein the compound of formula (III) is a protected or unprotected galactose, mannose, glucose, or gulose.
31. The process of claim 27, wherein the compound of formula (III) is:
32. The process of claim 27, wherein two adjacent R1 groups come together to form an isopropylidine acetal or benzylidine acetal moiety.
33. The process of claim 27, wherein step (a) comprises reacting the compound of formula (II) and the compound of formula (III) in the presence of a hydrazine.
34. The process of claim 33, wherein the hydrazine is selected from the group consisting of phenylhydrazines and alkylhdrazines.
35. The process of claim 34, wherein the hydrazine is phenylhydrazine.
36. The process of claim 27, wherein the phosphorylation of step (c) comprises reacting the compound of formula (V) with a P(V) phosphorylating agent.
37. The process of claim 36, wherein the P(V) phosphorylating agent is selected from the group consisting of: POCl3; H3PO4; PO(OBn)xCl3-x; Cl3CCH2OP(O)Cl2; and (BnO)2P(O)OP(O)(OBn)2.
38. The process of claim 37, wherein the P(V) phosphorylating agent is POCl3.
39. The process of claim 27, wherein the phosphorylation of step (c) comprises reacting the compound of formula (V) with a P(III) phosphitylating agent.
40. The process of claim 39, wherein the P(III) phosphitylating agent is selected from the group consisting of: P(OCH2CH2CN)2Cl; P(OCH2CH2CN)(NPr2-i)Cl; and cyanoethyl-O\u2014PN(i-Pr)2)2.
41. The process of claim 39, wherein step (c) further comprises oxidizing the resulting phosphite to prepare the phosphate of compound (VI).
42. The process of claim 27, wherein step (d) comprises reacting the compound of formula (VI) with an oxidizing agent selected from the group consisting of: Ru04; Dess-Martin; DMSOtriflic anhydride; and PDC.
43. The process of claim 27, wherein the deprotection of the compound of formula (XIV) is performed under anaerobic conditions.
44. The process of claim 27, wherein the compound of formula (IV) is:
45. The process of claim 27, wherein the compound of formula (V) is:
46. The process of claim 27, wherein the compound formula (VI) is:
47. The process of claim 27, wherein the compound of formula (XIV) is:
48. The process of claim 27, wherein the process further comprises formulating the compound of formula (XIII) as a pharmaceutical composition.

What is claimed is:

1. A semiconductor light emitting device comprising: a light emitting portion made up of at least an active layer and clad layers; and a current diffusion layer formed above a GaP substrate,
wherein the current diffusion layer is defined as InxGa1-xP (0<X<1) where a composition ratio of In equals to X.
2. A semiconductor light emitting device comprising: a light emitting portion made up of at least an active layer and clad layers; and a current diffusion layer formed above a GaP substrate,
wherein the current diffusion layer is defined as InxAlyGa1-x-yP (0<x<1, 0<y<1) where a composition ratio of In equals to x and a composition ratio of A1 equals to y.
3. The semiconductor light emitting device according to claim 1,
wherein a normal of the GaP substrate surface inclines with respect to a normal of a (100) plane toward a 011 direction.
4. The semiconductor light emitting device according to claim 3,
wherein the normal of the GaP substrate surface inclines with respect to the normal of the (100) plane toward the 011 direction by a range from 2 to 20 degrees.
5. The semiconductor light emitting device according to claim 1,
wherein the current diffusion layer is larger in an energy gap than the active layer.
6. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as InxAlyGa1-x-yP (0x1, 0y1) where a composition ratio of In equals to x, and a composition ratio of A1 equals to y.
7. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as AlxGa1-xAs (0x1) where a composition ratio of A1 equals to x.
8. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as InxAlyGa1-x-yAs (0x1, 0y1) where a composition ratio of In equals to x, and a composition ratio of A1 equals to y.
9. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as InxGa1-xAsyP1-y (0x1, 0y1) where a composition ratio of In equals to x, and a composition ratio of As equals to y.
10. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as AlxGa1-xAsySb1-y (0x1, 0y1) where a composition ratio of A1 equals to x, and a composition ratio of As equals to y.
11. The semiconductor light emitting device according to claim 1,
wherein the light emitting portions are defined as InxAlyGa1-x-yN (0x1, 0y1) where a composition ratio of In equals to x, and a composition ratio of A1 equals to y.
12. The semiconductor light emitting device according to claim 1,
wherein a current interruption layer is provided in between the light emitting portions and a current diffusion layer.
13. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is larger in an energy gap than the active layer.
14. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is disposed in a center of an interface between the light emitting portions and the current diffusion layer.
15. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is disposed in a periphery of an interface between a light emitting portion and a current diffusion layer.
16. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is made up of a GaP.
17. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is defined as InxGa1-xP (0<X<1) where a composition ratio of In equals to x.
18. The semiconductor light emitting device according to claim 12,
wherein the current interruption layer is defined as InxAlyGa1-x-yP (0<x<1, 0y1) where a composition ratio of In equals to x and a composition ratio of A1 equals to y.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An outer race for a stator assembly comprising:
a body;
an outer circumferential edge;
a plurality of keys extending radially outward from said outer circumferential edge, each of said plurality of keys having a thickness, a pair of opposing sides, and an outer key edge extending between each one of said pair of opposing sides;
at least one spline projecting from at least one of said two opposing sides; and,
an inner circumferential edge.
2. The outer race as recited in claim 1 wherein said at least one spline projects from each of said two opposing sides.
3. The outer race as recited in claim 2 wherein said at least one spline is a plurality of splines project from each of said two opposing sides
4. The outer race as recited in claim 3 wherein said plurality of splines projecting from each of said two opposing sides is three splines.
5. The outer race as recited in claim 1 wherein each said at least one spline extends the length of said thickness of each of said plurality of keys.
6. The outer race as recited in claim 1 wherein each of said at least one spline is integral with said opposing side from which it projects.
7. The outer race as recited in claim 1 wherein each of said plurality of keys is integral with said outer circumferential edge.
8. The outer race as recited in claim 1 wherein said outer race is forged.
9. The outer race as recited in claim 1 wherein said outer race is stamped.
10. A stator assembly comprising:
a stator, said stator including:
a stator body;
an outer circumferential stator edge;
an inner circumferential edge;
an outer surface; and, a inner circumferential surface including a plurality of recesses;
a plurality of blades distributed on said inner surface; and, an outer race, said outer race including:
a body;
an outer circumferential edge;
a plurality of keys extending radially outward from said outer circumferential edge, each of said plurality of keys having a thickness, a pair of opposing sides, and an outer edge extending between each one of said pair of sides;
at least one spline projecting from at least one of said two opposing sides; and, an inner circumferential edge;
wherein each of said at least one spline forms grooves within respective stator recesses when said outer race is pressed into said stator body.
11. The outer race as recited in claim 10 wherein said at least one spline projects from each of said two opposing sides.
12. The outer race as recited in claim 11 wherein said at least one spline is a plurality of splines project from each of said two opposing sides
13. The outer race as recited in claim 12 wherein said plurality of splines projecting from each of said two opposing sides is three splines.
14. The outer race as recited in claim 10 wherein each said at least one spline extends the length of said thickness of each of said plurality of keys.
15. The outer race as recited in claim 10 wherein each of said at least one spline is integral with said opposing side from which it projects.
16. The outer race as recited in claim 10 wherein each of said plurality of keys is integral with said outer circumferential edge.
17. The outer race as recited in claim 1 wherein said outer race is forged.
18. The outer race as recited in claim 1 wherein said outer race is stamped.
19. The stator assembly as recited in claim 10 wherein said stator is fabricated from a softer substance than said outer race.
20. A method of fabricating a stator assembly
wherein a stator includes:
a stator body;
an outer circumferential stator edge;
an inner circumferential edge;
an outer surface; and,
a inner circumferential surface including a plurality of recesses;
a plurality of blades distributed on said inner surface; and,

wherein an outer race includes:
a body;
an outer circumferential edge;
a plurality of keys extending radially outward from said outer circumferential edge, each of said plurality of keys having a thickness, a pair of opposing sides, and an outer edge extending between each one of said pair of sides;
at least one spline projecting from at least one of said two opposing sides; and,
an inner circumferential edge;
wherein each of said at least one spline forms grooves within respective stator recesses when said outer race is pressed into said stator body. said method comprising:
positioning each of said keys over said stator body; and, pressing said keys into said stator body in an axial direction;
wherein said plurality of splines form grooves within said stator when said outer race is pressed into said stator body.
21. The method of fabricating a stator assembly as recited in claim 20 further comprising fitting an inner race inside said inner circumferential edge.
22. The stator assembly as recited in claim 20 wherein said stator is fabricated from a softer substance than said outer race.