All The Claims

1. A method of determining uplink ciphering activation time in a user equipment (UE), the UE configurable for communication with a telecommunications network over a communications channel comprising a radio bearer, the uplink ciphering activation time for determining a time at which a new ciphering configuration is to be implemented between the user equipment and the network, the method comprising the steps of:
determining, at the user equipment, the uplink activation time to be greater than a time to receive a response message at the network to a ciphering change request message while minimizing delay in the change to the new ciphering configuration;
the method further comprising, at the user equipment, determining a size of the response message to the ciphering change request message and determining a size of queued messages for sending over the communications channel using the radio bearer, the response message configurable to be transmitted from the UE via the communications channel using one or more protocol data units (PDUs);
using, at the user equipment, the determined size of the response message and queued messages, and a current sequent number for the radio bearer, in determining the uplink ciphering activation time;
inserting, at the user equipment, the uplink ciphering activation time into the response message and queuing the response message for transmission.
2. The method of claim 1 where determining a size comprises inserting a value comprising an estimated uplink ciphering activation time to the response message.
3. The method of claim 2 where the value is a dummy value.
4. The method of claim 1 where determining a size comprises accessing a table comprising maximum message sizes, and identifying a maximum size of message for use in determining the response message size.
5. The method of claim 1 comprising:
sending the response message;
disallowing any messages from being sent over the communications channel until receipt of a message comprising acknowledgement of the response message.
6. The method of claim 1 comprising:
sending the response message;
allowing further messages to be sent over the communications channel until the response message is acknowledged.
7. The method of claim 1 where determining an uplink ciphering activation time is further based on a number of queued messages on the radio bearer’s queue.
8. The method of claim 1 where the communications channel comprises signalling on radio bearer 2 (RB2).
9. The method of claim 1 where the response message is sent from the radio resource control (RRC).
10. The method of claim 1 further comprising:
sending a message of the determined size;
receiving a message comprising indicia that the sent message is acknowledged by the telecommunications network;
determining an amount of time that passed between the sending and the receiving; and
using the determined amount of time in determining the uplink ciphering activation time.
11. The method of claim 1 where the telecommunications network is a UMTS Terrestrial Radio Access Network (UTRAN) compliant communications network.
12. User equipment (UE) for determining an uplink ciphering activation time (UCAT) applicable to a communications channel on the UE, the communications channel compliant with a UMTS Terrestrial Radio Access Network (UTRAN), the UCAT usable to determine a time at which a new ciphering configuration for an uplink is to be implemented, the UE comprising:
a processor configured to generate a response message after receiving a ciphering change request message, the response message configurable for sending on a radio bearer, the response message configured to include the UCAT, the processor for calculating the UCAT to be greater than a time to receive the response message at the network while minimizing delay in the change to the new ciphering configuration, to determine a size of the response message to the ciphering change request, to determine a size of queued messages for sending over a communications channel using the radio bearer, the response message being configurable to be transmitted, to use a determined size of the response message and queued messages, and a current sequence number for the radio bearer to determine the uplink ciphering activation time, and to insert the uplink ciphering time into the response message and to queue the response message for transmission.
13. The UE of claim 12 where the processor is further configured to determine a size of the response message;
and further where the processor is configured to calculate the UCAT based on a data rate.
14. The UE of claim 13 where the processor is further configured to determine the size of the response message by including an example value comprising an estimated uplink ciphering activation time.
15. The UE of claim 14 where the example value is a dummy value.
16. The UE of claim 13 where the processor is further configured to determine the size of the response message by accessing a table comprising maximum message sizes, and identifying a maximum size of message for use as a response message.
17. The UE of claim 13 where the processor is further configured to determine a time, the time based on sending a message having a substantially same size as the size of the response message, to the receipt of a message comprising indicia that the sent message was acknowledged by the telecommunications network; and to use the determined time to calculate a UCAT.
18. A computer program product comprising a non-transitory computer readable storage medium, the computer program product comprising:
computer readable program code embodied at the non-transitory computer readable storage medium for configuring a response message after receiving a ciphering change request message, the configured response message to be usable for sending on a radio bearer and to be receivable by a UMTS Terrestrial Radio Access Network (UTRAN) compliant communications network;
computer readable program code embodied at the non-transitory computer readable storage medium for determining an uplink ciphering activation time to be greater than a time to receive a response message at the network to a ciphering change request message while minimizing delay in the change to the new ciphering configuration, to determine a size of the response message to the ciphering change request, to determine a size of queued messages for sending over a communications channel using the radio bearer, the response message being configurable to be transmitted, to use a determined size of the response message and queued messages, and a current sequence number for the radio bearer to determine the uplink ciphering activation time, and to insert the uplink ciphering time into the response message and to queue the response message for transmission.
19. The computer program product of claim 18 further comprising computer readable program code embodied at the non-transitory computer readable storage medium for determining a size of the response message;
computer readable program code embodied at the non-transitory computer readable storage medium for determining the uplink ciphering activation time using the determined size and a data rate; and
computer readable program code embodied at the non-transitory computer readable storage medium for incorporating the determined uplink ciphering activation time in the response message.
20. The computer program product of claim 18 where the computer readable program code embodied at the non-transitory computer readable storage medium, when run on a UE, causes the UE to keep track of an amount of time between the sending of a message of the determined size and the receipt of a message comprising indicia that the sent message is acknowledged by the telecommunications network, and, using the determined amount of time in determining the uplink ciphering activation time.
21. The computer program product of claim 18 where the computer readable program code embodied at the non-transitory computer readable storage medium, when run on a UE, causes the UE to calculate the size of the response message by including in the response message an example value comprising an estimated uplink ciphering activation time.
22. The computer program product of claim 18 where the computer readable program code embodied at the non-transitory computer readable storage medium, when run on a UE, causes the UE to calculate the size of the response message by accessing a table comprising maximum message sizes, and identifying a maximum size of message for use as a response message.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An image-forming lens set comprising an aperture stop, a first lens with positive power, a second lens with negative power and a third lens, which are arranged along an optical axis from an object side toward an image side in order;
wherein the first lens has two opposite surfaces including a convex surface facing the object side, and at least one of the two opposite surfaces is a non-spherical surface;
wherein the second lens is a convex-concave lens having two opposite surfaces including a concave surface facing the object side, and at least one of the two opposite surfaces of the second lens is a non-spherical surface;
wherein the third lens has negative refractive power becoming greater from a center to a periphery of positive refractive power; the third lens has two non-spherical opposite surfaces including a convex surface facing the object side; and
wherein at least one of the first, second and third lenses is coated with a layer of optical film for filtering light.
2. The image-forming lens set as claimed in claim 1, which satisfies the Equation 1 as follows:
0.2<(|R21||R22|)<1.5\u2003\u2003Equation 1

in which:
R21 is the radius of curvature of the surface of the second lens that faces the object side; and
R22 is the radius of curvature of the surface of the second lens that faces the image side.
3. The image-forming lens set as claimed in claim 1, which satisfies the Equation 2 as follows:
\u22121.5\u2266(F1+F2)F\u22660.3\u2003\u2003Equation 2

in which:
F1 is the effective focal length of the first lens;
F2 is the effective focal length of the second lens; and
F is the effective focal length of the image-forming lens set.
4. The image-forming lens set as claimed in claim 1, which satisfies the Equation 3 as follows:
20.5<V2<35.3\u2003\u2003Equation 3

in which V2 is the dispersion coefficient of the second lens.
5. The image-forming lens set as claimed in claim 1, which satisfies the Equation 4 as follows:
45.3<V3<56.3\u2003\u2003Equation 4

in which V3 is the dispersion coefficient of the third lens.
6. The image-forming lens set as claimed in claim 1, wherein one of the first, second and third lenses is coated with a layer of optical film for enhancing light transmission.
7. The image-forming lens set as claimed in claim 1, further comprising a protective glass located between the third lens and the image side.
8. An image-forming lens set comprising an aperture stop, a first lens with positive power, a second lens with negative power, a third lens and a fourth lens, which are arranged along an optical axis from an object side toward an image side in order;
wherein the first lens has two opposite surfaces including a convex surface facing the object side, and at least one of the two opposite surfaces is a non-spherical surface;
wherein the second lens is a convex-concave lens having two opposite surfaces including a concave surface facing the object side, and at least one of the two opposite surfaces of the second lens is a non-spherical surface;
wherein the third lens has negative refractive power becoming greater from a center to a periphery of positive refractive power; the third lens has two non-spherical opposite surfaces including a convex surface facing the object side; and
wherein the fourth lens is coated with a layer of optical film for filtering light.
9. The image-forming lens set as claimed in claim 8, wherein the fourth lens is a planar lens made of glass.
10. The image-forming lens set as claimed in claim 8, wherein at least one of the first, second and third lenses is coated with a layer of optical film for enhancing light transmission.

1. A system for processing positioning signals, the system comprising:
a mobile phone including:
a tracker hardware interface for receiving positioning information from a tracker hardware internal or external to the mobile phone;
a memory including a GPS library having a user interface, a tracker interface, and an operating system interface, the tracker interface including at least one tracker interface function for communicating with the tracker hardware over the tracker hardware interface; and
a processor for running the tracker interface function,

wherein the processor, using the GPS library, computes a location of the mobile phone based on the positioning information obtained by the tracker interface function, and is configured to communicate the location of the mobile phone to a plurality of respectively different user programs running on the mobile phone in response to requests from the respective programs.
2. The system of claim 1, wherein the tracker hardware interface comprises a serial interface.
3. The system of claim 1, wherein the user interface comprises at least one positioning control function and at least one positioning engine communication function.
4. The system of claim 3, wherein the positioning control function comprises a positioning engine start function.
5. The system of claim 3, wherein the positioning control function comprises a positioning engine stop function.
6. The system of claim 3, wherein the positioning engine communication function is a command delivery function.
7. The system of claim 1, wherein the user programs includes at least one of: a mapping program displaying the location of the mobile phone, a course charter program displaying a path traveled by the mobile phone and a location aid program displaying location information of the mobile phone.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A semiconductor device comprising an EEPROM and a FLASH-EPROM memory, in which the EEPROM memory comprises a matrix of rows and columns of memory cells with a selection transistor having a selection gate and, arranged in series therewith, a memory transistor having a floating gate and a control gate, in which the selection transistor is further connected to a bit line of the EEPROM memory and the memory transistor is connected to a source line of the EEPROM memory, which source line is common for a plurality of memory cells, and in which the FLASH-EPROM memory comprises a matrix of rows and columns of memory cells with a memory transistor having a floating gate and a control gate, characterized in that, in addition to the memory transistor having a floating gate and a control gate, the memory cells of the FLASH-EPROM memory comprise a transistor arranged in series with this memory transistor and having a control gate, the memory transistor being further connected to a bit line of the FLASH-EPROM memory, and the transistor arranged in series with the memory transistor being connected to a source line of the FLASH-EPROM memory, which source line is common for a large number of memory cells.
2. A semiconductor device as claimed in claim 1, comprising a silicon body having a surface which is provided at the area of the memory cells of the EEPROM memory with a layer of silicon oxide having a thickness which renders it suitable as a gate oxide for the selection transistor, which layer underneath the floating gate of the memory transistor is provided with a part having a smaller thickness which renders said part of the layer of silicon oxide suitable as a tunnel oxide for the memory transistor, characterized in that the surface of the silicon oxide is provided with a layer of silicon oxide at the area of the memory cells of the FLASH-EPROM memory underneath the control gates of the transistors arranged in series with the memory transistors, which layer of silicon oxide has a thickness which is equal to the thickness of the part having the smaller thickness and being present underneath the floating gate of the memory transistors of the EEPROM memory.
3. A semiconductor device as claimed in claim 2, characterized in that the surface of the silicon body is provided with a layer of silicon oxide at the area of the memory cells of the FLASH-EPROM memory underneath the floating gates of the memory transistors, which layer of silicon oxide has a thickness which is also equal to the thickness of the part having the smaller thickness and being present underneath the floating gate of the memory transistors of the EEPROM memory.
4. A method of manufacturing a semiconductor device as claimed in claim 3, characterized in that, after active semiconductor regions of a first conductivity type adjacent the surface of the silicon body have been formed in said silicon body at the area of the memory cells to be formed in the two memories, the silicon body is subjected to a first oxidation process in which the surface of the silicon body is provided with a first layer of silicon oxide in which windows are formed at the area of floating gates to be formed in the memory transistors of the EEPROM memory and at the area of the memory cells to be formed in the FLASH-EPROM memory, whereafter the silicon body is subjected to a second oxidation process in which a second layer of silicon oxide is formed within the windows with such a thickness that said layer can serve as a tunnel oxide for the memory transistors to be formed in both memories and as a gate oxide of the transistor arranged in series with the memory transistor of the FLASH-EPROM memory, and in which the first layer of silicon oxide acquires such a larger thickness that it can serve as a gate oxide for the selection transistors to be formed in the EEPROM memory.
5. A method of manufacturing a semiconductor device as claimed in claim 4, characterized in that, prior to the first oxidation treatment, the active regions for the memory cells of the EEPROM memory are provided with semiconductor zones of the first conductivity type adjacent the surface and serving as tunnel zones are formed at the area of the floating gates to be formed in the memory transistors, which semiconductor zones have a doping concentration which is higher than that of the active regions.
6. A method of manufacturing a semiconductor device as claimed in claim 4 or 5, characterized in that, after the formation of the two layers of silicon oxide, a first layer of amorphous or polycrystalline silicon is deposited in which the floating gates of the memory transistors and the selection gates of the selection transistors of the memory cells of the EEPROM memory, and the floating gates of the memory transistors and the control gates of the FLASH-EPROM memory transistors arranged in series therewith are formed.
7. A method of manufacturing a semiconductor device as claimed in claim 6, characterized in that, after the formation of the floating gates of the memory cells of both memories in the first layer of polycrystalline silicon, these floating gates are provided with a layer of dielectric, whereafter a second layer of amorphous or polycrystalline silicon is deposited, in which layer the control gates of the memory transistors of the memory cells of the EEPROM memory and the control gates of the memory transistors of the memory cells of the FLASH-EPROM memory are formed.