All The Claims

1. A system for performing a total knee arthroplasty, the system comprising:
a reference block configured for attachment to a distal surface of the femur and connection with a distal femoral cut guide configured to resect the distal medial and lateral condyles, the reference block setting a position of the resections on the distal medial and lateral condyles when attached to the femur; and
a plurality of shims, each shim attachable to or integral with the reference block, each shim configured for contact with the distal surface of at least one of the medial and lateral condyles of the femur, wherein a particular shim is selected for use from the plurality of shims based on matching at least one of the medial and lateral thicknesses of the selected shim with a determined wear of cartilage on at least one of the distal medial and lateral condyles.
2. The system of claim 1, wherein the plurality of shims can comprise both medial side shims and lateral side shims, and wherein the medial side shims and lateral side shims can comprise separate components from one another and each of the medial side shims and each of the lateral side shims can be configured for attachment to one of a medial side or a lateral side of the reference block.
3. The system of claim 1, wherein at least one of the plurality of shims has a medial thickness that differs from a lateral thickness for that particular shim.
4. The system of claim 1, wherein the reference block includes four reference blocks, the plurality of shims includes four shims, and each of the shims and a corresponding one of the four reference blocks are monolithic to form four one-piece shim block assemblies.
5. The system of claim 4, wherein the plurality of shims comprises:
a first shim having a first medial thickness equal to a first lateral thickness and configured for use on a femur having little to no wear on the distal medial and lateral condyles;
a second shim having a second medial thickness equal to a second lateral thickness and greater than the first medial thickness of the first shim, the second shim configured for use on a femur having cartilage wear on one or both the distal medial and lateral condyles;
a third shim having a third medial thickness less than a third lateral thickness and generally equal to the first medial thickness of the first shim, the third shim configured for use on a femur having cartilage wear on a distal lateral condyle; and
a fourth shim having a fourth medial thickness greater than a fourth lateral thickness and greater than the first medial thickness of the first shim, the fourth shim configured for use on a femur having cartilage wear on a distal medial condyle.
6. The system of claim 5, wherein the second medial and lateral thicknesses of the second shim are about 2 mm greater than the first medial and lateral thicknesses of the first shim.
7. The system of claim 5, wherein the third lateral thickness of the third shim is about 2 mm greater than the third medial thickness of the third shim, and the fourth medial thickness of the fourth shim is about 2 mm greater than the fourth lateral thickness of the fourth shim.
8. The system of claim 1, wherein the plurality of shims includes at least three shims and each shim is removably attachable to the reference block.
9. The system of claim 8, wherein the plurality of shims comprises:
a first shim having a first medial thickness equal to a first lateral thickness and configured for use on a femur having little to no wear on the distal medial and lateral condyles;
a second shim having a second medial thickness equal to a second lateral thickness and greater than the first medial thickness of the first shim, the second shim configured for use on a femur having cartilage wear on both the distal and medial lateral condyles; and
a third shim having a third medial thickness less than a third lateral thickness and generally equal to the first medial thickness of the first shim, the third shim configured for use on a femur having cartilage wear on a distal lateral condyle.
10. The system of claim 9, wherein the third shim is configured for use on a femur having cartilage wear on a distal medial condyle by rotating the shim 180 degrees such that the medial portion of the shim is configured for placement on the lateral condyle of the distal femur and the lateral portion of the shim is configured for placement on the medial condyle of the distal femur.
11. The system of claim 9, wherein the second medial and lateral thicknesses of the second shim are about 2 mm greater than the first medial and lateral thicknesses of the first shim, and the third medial thickness of the third shim is about 2 mm less than the third lateral shim.
12. The system of claim 1, further comprising one or more spacers insertable on a bone contacting side of a cut block configured to resect a posterior portion of the distal femur after resecting the distal medial and lateral condyles.
13. The system of claim 12, wherein the one or more spacers comprises a first spacer having a thickness of about 1 mm and a second spacer having a thickness of about 2 mm.
14. A system for performing a total knee arthroplasty, the system comprising:
a plurality of shim blocks configured for attachment to a distal surface of the femur and for use with a distal femoral cut guide, each of the shim blocks configured to set a location of bone resections on the distal medial and lateral condyles made using the distal femoral cut guide when the shim block is attached to the femur, each of the shim blocks comprising:
a bone contacting side;
an opposing non-bone contacting side;
a medial portion;
a lateral portion; and
at least one opening extending from the bone contacting side to the non-bone contacting side and configured to receive an intramedullary rod, wherein at least one of the plurality of shim blocks has a medial thickness on the medial portion different from a lateral thickness on the lateral portion for that particular shim block, and a particular shim block is selected for use in the total knee arthroplasty based on a determined wear of cartilage on the distal medial and lateral condyles.
15. The system of claim 14, wherein the plurality of shim blocks comprises:
a first shim block having a first medial thickness equal to a first lateral thickness and configured for use on a femur having little to no wear on the distal medial and lateral condyles;
a second shim block having a second medial thickness equal to a second lateral thickness and greater than the first medial thickness of the first shim block, the second shim block configured for use on a femur having cartilage wear on both the distal medial and lateral condyles;
a third shim block having a third medial thickness less than a third lateral thickness and generally equal to the first medial thickness of the first shim block, the third shim block configured for use on a femur having cartilage wear on a distal lateral condyle; and
a fourth shim block having a fourth medial thickness greater than a fourth lateral thickness and greater than the first medial thickness of the first shim block, the fourth shim block configured for use on a femur having cartilage wear on a distal medial condyle.
16. The system of claim 15, wherein the second medial and lateral thicknesses of the second shim block are about 2 mm greater than the first medial and lateral thicknesses of the first shim block, the third medial thickness of the third shim block is about 2 mm less than the third lateral thickness of the third shim block, and the fourth medial thickness of the fourth shim block is about 2 mm greater than the fourth lateral thickness of the fourth shim block.
17. The system of claim 14, wherein each of the shim blocks comprises two apertures formed in a top portion of the shim block, and the system further comprises:
a guide tower configured to receive the selected shim block prior to attachment of the shim block to the distal surface of the femur.
18. The system of claim 14, further comprising one or more spacers insertable on a bone contacting side of a cut block configured to resect a posterior portion of the distal femur after resecting the distal medial and lateral condyles.
19. A method of performing a total knee arthroplasty, the method comprising:
determining cartilage wear on distal medial and lateral condyles of a distal femur;
determining a target medial resection thickness and a target lateral resection thickness based on the determined cartilage wear;
selecting a shim block assembly from a plurality of shim block assemblies, each shim block assembly configured for attachment to a distal surface of the femur and for use with a distal femoral cut guide to set a location of bone resections on the distal medial and lateral condyles, each shim block assembly comprising a bone contacting side and the particular shim block assembly selected is based on the determined cartilage wear on the distal medial and lateral condyles;
attaching the shim block assembly to the distal femur;
connecting the distal femoral cut guide to the shim block assembly on the distal femur; and
resecting the distal medial and lateral condyles.
20. The method of claim 19, wherein the shim block assemblies can include both medial side shims and lateral side shims, and wherein the medial side shims and lateral side shims can comprise separate components from one another.
21. The method of claim 19, wherein each shim block has a medial portion and a lateral portion and at least one of the shim block assemblies having a medial thickness on the medial portion different from a lateral thickness on the lateral portion for that particular shim block.
22. The method of claim 19, further comprising:
confirming a thickness of the distal medial resection is about equal to the target medial resection thickness; and
confirming a thickness of the distal lateral resection is about equal to the target lateral resection thickness.
23. The method of claim 19, wherein the plurality of shim block assemblies includes a plurality of shim components and a block assembly, and each shim component is removably attachable to the block assembly to form a two-piece shim block assembly.
24. The method of claim 19, further comprising:
resecting a posterior portion of the distal femur.
25. The method of claim 24, wherein resecting the posterior portion of the distal femur is performed by a cut block, and if a thickness of the distal medial resection is greater than the target medial resection thickness or a thickness of the distal lateral resection is greater than the target lateral resection thickness, the method further comprises:
placing one or more spacers on a bone contacting side of the cut block prior to resecting the posterior portion of the distal femur, the one or more spacers configured to compensate for a difference between the thickness of the distal medial resection and the target medial resection thickness or a difference between the thickness of the distal lateral resection and the target lateral resection thickness.
26. The method of claim 19, wherein the plurality of shim block assemblies comprises:
a first shim block having a first medial thickness equal to a first lateral thickness and configured for use on a femur having little to no wear on the distal medial and lateral condyles;
a second shim block having a second medial thickness equal to a second lateral thickness and greater than the first medial thickness of the first shim block, the second shim block configured for use on a femur having cartilage wear on one or both the distal medial and lateral condyles;
a third shim block having a third medial thickness less than a third lateral thickness and generally equal to the first medial thickness of the first shim block, the third shim block configured for use on a femur having cartilage wear on a distal lateral condyle; and
a fourth shim block having a fourth medial thickness greater than a fourth lateral thickness and greater than the first medial thickness of the first shim block, the fourth shim block configured for use on a femur having cartilage wear on a distal medial condyle.
27. The method of claim 26, wherein the second medial and lateral thicknesses of the second shim block are about 2 mm greater than the first medial and lateral thicknesses of the first shim block, the third medial thickness of the third shim block is about 2 mm less than the third lateral thickness of the third shim block, and the fourth medial thickness of the fourth shim block is about 2 mm greater than the fourth lateral thickness of the fourth shim block.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. An integrated delivery device operable with one hand and for co-delivery of a liquid medicant and a powder medicant onto a tissue or wound comprising at least two integrated medicant expression subunits of
a) a liquid medicant expression subunit and a
b) a powder medicant expression subunit,
a. each expression subunit having an actuator for the medicant contained therein, the actuators are positioned in close proximity to each other at a proximate end of said expression subunits, and
b. delivery cannulas for each of said expression subunits that positioned in close proximity to each other at a distal end of said expression subunits.
2. The integrated delivery device of claim 1, wherein the liquid medicant expression subunit comprises a syringe containing the liquid medicant, and the powder medicant expression subunit comprises a powder delivery pump.
3. The integrated delivery device of claim 2, wherein the liquid medicant comprises a two-part sealant or hemostat, and the syringe comprises a dual barrel syringe with each barrel containing one of different individual components of the two-part sealant or hemostat.
4. The integrated delivery device of claim 3, wherein the powder delivery pump comprises a resiliently compressible bellows and a compartment filled with the powder medicant, said compartment being in fluid communication with the bellows and with the powder medicant delivery cannula.
5. The integrated delivery device of claim 4, wherein the dual barrel syringe comprises two plungers that are connected by a plunger bridge at the proximal end and a handle at the proximal end, wherein the plunger bridge and the resiliently compressible bellows are positioned in close proximity to one another and are synchronously or sequentially operable while being held in one hand.
6. The integrated delivery device of claim 5, wherein the resiliently compressible bellows is mounted onto the plunger bridge or onto the handle.
7. The integrated delivery device of claim 5, wherein the resiliently compressible bellows is mounted between the barrels.
8. The integrated delivery device of claim 5, wherein the plunger bridge and the resiliently compressible bellows are operable with the same finger of one hand while being held in the same one hand.
9. The integrated delivery device of claim 2, wherein the liquid medicant comprises a cross-linkable polymer, and the syringe comprises a single barrel syringe containing a cross-linking initiator andor a cross-linking accelerator that is retained on a porous media that is in fluid communication with said single barrel syringe.
10. The integrated delivery device of claim 9, wherein the cross-linkable polymer comprises an acrylic monomer.
11. A method of treating of the tissue comprising activating the integrated delivery device of claim 1 to deliver the powder medicant and the liquid medicant onto the tissue with no pre-mixing of the powder medicant and the liquid medicant to form a hemostatic or tissue sealing or coating on the tissue.
12. A method of claim 11, wherein the liquid medicant and the powder medicant are delivered within about 10 seconds of each other onto the tissue, and wherein the integrated delivery device is operated with one hand.
13. The method of claim 11, wherein said coating has a tissue interface side and an opposing top side; and wherein the powder medicant is directionally concentrated within the coating layer either at the tissue interface side or at the top side.
14. The method of claim 11, wherein said coating has a tissue interface side and an opposing top side; and wherein the powder medicant is distributed within the coating approximately uniformly as between the tissue interface side and the top side.
15. The method of claim 11, wherein the powder medicant comprises a bioabsorbable powder having at least one of hemostatic, wound treatment, fluid absorption, properties; the liquid medicant comprises a rapidly curable bioabsorbable liquid having hemostatic and or tissue sealing properties; and wherein said powder medicant is a non-curable powder material.
16. The method of claim 11, wherein said powder medicant is in the form of particles with an aspect ratio from about 1 to about 10, and an average particle size from about 90 microns to about 320 microns.
17. The method of claim 11, wherein said powder medicant is oxidized cellulose, oxidized regenerated cellulose, chitosan, starch, gelatin, collagen, or synthetic polymer.
18. The method of claim 11, wherein said powder medicant is oxidized regenerated cellulose.
19. The method of claim 11, wherein said liquid medicant comprises a fibrinogen and an initiator of fibrinogen conversion to fibrin.
20. The method of claim 11, wherein said liquid medicant comprises an acrylic monomer.

1. A memory, comprising:
a memory array, comprising a memory cell;
wherein the memory is adapted to program a first number of bits into the memory cell; and
wherein the memory is adapted to sense a second number of bits, different from the first number of bits, from the memory cell.
2. The memory of claim 1, wherein the first number of bits is equal to M bits and the second number of bits is equal to M+L bits.
3. The memory of claim 2, wherein M is greater than L.
4. The memory of claim 1, wherein the first number of bits is equal to M+N bits and the second number of bits is equal to M+L bits, wherein M is a number of data bits, N is a number of additional programming resolution bits, and L is a number of additional read resolution bits.
5. The memory of claim 4, wherein M+N is greater than L.
6. The memory of claim 1, wherein the first number of bits is greater than the second number of bits.
7. The memory of claim 1, wherein the second number of bits is greater than the first number of bits.
8. A readwrite circuit, comprising:
a multiplexer coupled to a plurality of data lines; and
storage elements configured to store a first number of bits to be programmed into a memory cell coupled to each of the plurality of data lines, and configured to store a second number of bits of data to be sensed from a memory cell coupled to one of the plurality of data lines, the first number of bits to be programmed being different than the second number of bits of data to be sensed.
9. The readwrite circuit of claim 8, further comprising:
a sense amplifier coupled to the storage elements and the multiplexer; and
a program control circuit coupled to the storage elements and the multiplexer;
wherein the multiplexer is configured to couple each of the plurality of data lines to the program control circuit during a programming operation and to couple one of the plurality of data lines to the sense amplifier during a sensing operation.
10. The readwrite circuit of claim 9, wherein the sense amplifier is configured to sense a Vt level of the memory cell.
11. The readwrite circuit of claim 8, wherein the first number of bits is M bits or M+N bits, and wherein the second number of bits is M+L bits.
12. A readwrite circuit, comprising:
a multiplexer coupled to a plurality of data lines; and
storage elements configured to store a first number of bits to be programmed into a memory cell coupled to each of the plurality of data lines, and configured to store a second number of bits of data to be sensed from a memory cell coupled to one of the plurality of data lines, the first number of bits to be programmed being different than the second number of bits of data to be sensed
a sense amplifier coupled to the storage elements and the multiplexer;
a program control circuit coupled to the storage elements and the multiplexer; and
a comparator coupled to the storage elements and the program control circuit.
13. The readwrite circuit of claim 12, wherein the multiplexer is configured to couple each of the plurality of data lines to the program control circuit during a programming operation and to couple one of the plurality of data lines to the sense amplifier during a sensing operation.
14. A memory, comprising:
a memory array organized in rows and columns; and
storage elements configured to store a number of bits of data to be programmed in each memory cell of a selected row;
wherein the memory is configured to selectively adjust a number of pages in a row without increasing a number of storage elements.
15. The memory of claim 14, wherein the memory is configured to adjust the number of bits of data to be programmed in each memory cell of the selected row up or down.
16. The memory of claim 14, wherein the memory is configured to select a maximum number of storage elements available per cell of a page for a selected sensing resolution.
17. The memory of claim 16, wherein the memory is configured to select the sensing resolution internally under the control of the memory.
18. The memory of claim 16, wherein the sensing resolution is selected externally.
19. The memory of claim 16, wherein the sensing resolution is selected externally by setting of a mode register or signal line of the memory.
20. The memory of claim 14, wherein the memory is configured to alter column decoding to select more or less pages in the row.
21. A non-volatile memory device, comprising:
a memory array;
readwrite circuitry coupled to the memory array;
wherein the readwrite circuitry is configured to receive an analog signal representative of M+N bits and to program a memory cell using the received analog signal;
wherein the readwrite circuitry is configured to sense an analog signal from the memory cell representative of M+L bits and to output the sensed analog signal from the non-volatile memory device; and
wherein N is not equal to L.
22. The non-volatile memory device of claim 21, further comprising a buffer coupled to receive the analog signal representative of M+L bits from the readwrite circuitry before the analog signal representative of M+L bits is output from the memory device.
23. The non-volatile memory device of claim 21, wherein the memory array is a NAND architecture memory array.
24. The non-volatile memory device of claim 21, wherein the non-volatile memory device is configured to process and generate the received and sensed analog signals representative of M bits of data stored in the memory cell.
25. The non-volatile memory device of claim 24, wherein the non-volatile memory device is configured to store the M bits of data using 2M+N threshold voltage ranges on the memory cell.
26. The non-volatile memory device of claim 24, wherein the memory cell is a multi-level cell and the non-volatile memory device is configured to program the multi-level cell directly to a target threshold voltage for a desired bit pattern.
27. A memory controller, comprising:
a digital signal processor;
an M+N bit digital to analog converter coupled to receive M bits of digital data in combination with the N bits of additional programming resolution from the digital signal processor, the digital to analog converter configured to output an analog signal;
an M+L bit analog to digital converter coupled to receive an analog signal and coupled to output an M+L bit digital signal to the digital signal processor; and
wherein N is not equal to L.
28. The memory controller of claim 27, wherein the digital signal processor is configured to retrieve M bits of data from the M+L bit digital signal.
29. The memory controller of claim 28, wherein the M+L bit analog to digital converter is configured to receive the analog signal from a memory cell of a memory device.
30. A non-volatile memory device, comprising:
a memory array;
an M+N bit digital to analog converter configured to receive, as a digital representation, M+N bits of program data for a memory cell of the memory array;
readwrite circuitry coupled to the memory array and coupled to receive an analog signal from the M+N bit digital to analog converter, wherein the readwrite circuitry is configured to program the memory cell using the received analog signal; and
an M+L bit analog to digital converter coupled to receive from the readwrite circuitry an analog signal representative of M+L bits read from the memory cell by the readwrite circuitry and to output a digital data signal representative of the M+L bits from the non-volatile memory device;
wherein N is not equal to L.
31. The non-volatile memory device of claim 30, further comprising a buffer coupled to receive the analog signal from the readwrite circuitry representative of M+L bits read from the memory cell and to output the analog signal representative of M+L bits read from the memory cell to the M+L bit analog to digital converter.
32. The non-volatile memory device of claim 30, wherein the readwrite circuitry is configured to sense threshold voltages of the memory cell corresponding to the M+L bits.
33. The non-volatile memory device of claim 32, wherein the analog signal representative of the M+L bits read from the memory cell comprises the sensed threshold voltages.
34. A memory controller, comprising:
a digital signal processor;
wherein the digital signal processor is configured to output a digital data signal of M+N bits of program data intended for programming a memory cell of a memory device;
wherein the digital signal processor is configured to receive a digital data signal of M+L bits read from the memory cell of the memory device and to retrieve from the received digital data signal M bits of data that were stored in the memory cell; and
wherein N is not equal to L.
35. A non-volatile memory device, comprising:
a memory array; and
sense amplifier and readwrite circuitry coupled to the memory array;
wherein the sense amplifier and readwrite circuitry is configured to receive M+N bits of digital program data and to program a memory cell of the memory array, in a program operation, with the M+N bits of digital program data;
wherein the sense amplifier and readwrite circuitry is configured to sense an M+L bit data value from the memory cell; and
wherein N is not equal to L.
36. The non-volatile memory device of claim 35, wherein the sense amplifier and readwrite circuitry is configured to sense the M+L bit data value from the memory cell by sensing a threshold voltage of the memory cell.
37. The non-volatile memory device of claim 36, wherein the non-volatile memory device is configured to match the threshold voltage of the memory cell to a digital representation of an M+L bit read resolution.
38. The non-volatile memory device of claim 37, wherein the non-volatile memory device is configured to match and sense the threshold voltage to the digital representation by any one of multi-pass reading, ramped word line voltage reading, and source-follower reading.
39. The non-volatile memory device of claim 37, further comprising a buffer coupled to the sense amplifier and readwrite circuitry, wherein the buffer is configured to receive the digital representation of the sensed threshold voltage from the sense amplifier and readwrite circuitry and buffer the digital representation of the sensed threshold voltage for output from the non-volatile memory device.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A monochromator system for selecting a small range of wavelengths in a polychromatic beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions:
source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
said source means for providing a beam of electromagnetic radiation comprising both Xenon and Deuterium Lamps and source selecting mirror and motion imparting means for selecting therebetween;
said second mirror being laterally present between said first mirror and said second stage which comprises a plurality of gratings, and said third mirror being laterally positioned between said first stage which comprises a plurality of gratings and said fourth mirror,
said first mirror and second mirror and said second stage comprising a plurality of gratings as a group being longitudinally removed from said first stage which comprises a plurality of gratings and said third mirror and said fourth mirror;
there being first electromagnetic radiation blocking baffle means positioned between said source means for providing of a beam of electromagnetic radiation and said first stage comprising a plurality of gratings;
there being second electromagnetic radiation blocking baffle means positioned between said second mirror providing element and said second stage comprising a plurality of gratings;
there being third electromagnetic radiation blocking baffle means positioned between said third mirror providing element and said first stage comprising a plurality of gratings;
there being fourth electromagnetic radiation blocking baffle means positioned between said first and second mirrors;
there being fifth electromagnetic radiation blocking baffle means positioned between said third and fourth mirrors;
there being sixth electromagnetic radiation blocking baffle means positioned between said second stage comprising a plurality of gratings and said pin hole providing means;
such that in use a beam of electromagnetic radiation provided by said source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;

said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;

the improvements being that:
said Deuterium lamp is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means;
said beam chopping means, source selecting mirror and motion imparting means, first slit providing means, first stage comprising a plurality of gratings and associated rotation imparting means, second slit providing means, second stage comprising a plurality of gratings and associated rotation imparting means, all have electrical plug-insocket means;
and a mother printed circuit board which provides traces which in use carry electrical energy to said source selecting mirror motion imparting means, said first slit providing means, said first stage comprising a plurality of gratings and associated rotation imparting means, said second slit providing means, said second stage comprising a plurality of gratings and associated rotation imparting means; conductive traces on said mother printed circuit board providing access at a socket means which is extended outside said substantially enclosed space defining enclosing means.
2. A monochromator system as in claim 1, in which electronic circuitry for controlling said rotation imparting means which when provided an electrical signal causes rotation of said associate first or second stage is present on a printed circuit board which plugs into said socket means of said mother printed circuit board which is extended outside said substantially enclosed space defining enclosing means via a sealing means.
3. A monochromator system as in claim 1, in which the first and second slit providing means each comprise a slit which is effected by a bilateral slit assembly which comprises two slide assemblies, each slide assembly comprising an elongated rail element and a slide element such that said slide element can slide with respect to said elongated rail element in the direction of elongation thereof, wherein said two slide assemblies are oriented; by affixing said elongated rail elements to a frame, such that slide element’s loci of motion converge toward a lover extent of said frame, as said bilateral slit assembly is viewed in vertically oriented frontal elevation, thereby forming an upward opening EVA shape therebetween, the lower ends of each slide element comprising means for allowing horizontal motion therebetween when said slide element lower ends are caused to simultaneously move vertically during use, which bilateral slit assembly further comprises two knife-blade elements, one affixed to each slide element such that a horizontal slit width between vertically oriented facing edges of said two knife-blade elements can be controlled between essentially zero (0) distance and some larger distance by a simultaneous vertically oriented motion of the lower ends of said slide elements during use,
the purpose of controlling said horizontal slit width between vertically oriented facing edges of said two knife-blade elements being to control the intensity and frequency bandwidth of a light beam which can pass therebetween, as is required by spectrometers, monochromators, and spectrographs and the like.
4. A monochromator system as in claim 1, in which the first and second slit providing means each comprise a slit which is effected by a bilateral slit assembly which comprises two knife-blade elements, affixed to slide elements such that a horizontal slit width between vertically oriented facing edges of said two knife-blade elements can be controlled between essentially zero (0) distance and some larger distance by horizontal oriented motion of one or the other thereof during use, said motion translation being via motion of a wedge which contacts two sequences of balls, the first in each sequence of balls contacting the wedge and the last ball in one sequence contacting one of the two knife blades, and the last ball in the other sequence contacting the other of the two knife blades, such that causing the wedge to move causes the first ball in each sequence of balls to move and in turn the last ball in each sequence effects motion of the knife blade it contacts, said first ball in one said sequence contacting one side of said wedge, and said first ball in said second sequence contacting the other said of said wedge;
the purpose of controlling said horizontal slit width between vertically oriented facing edges of said two knife-blade elements being to control the intensity and frequency bandwidth of a light beam which can pass therebetween, as is required by spectrometers, monochromators, and spectrographs and the like.
5. A monochromator system for selecting a small range of wavelengths in a beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having longitudinal and lateral dimensions:
Deuterium source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
such that in use a beam of electromagnetic radiation provided by said Deuterium source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;

said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
the improvements being that:
said Deuterium source means is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means via means which project through said enclosing means, the control for each of the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motion providing laterally directed motion which, when exerted in a positive direction respectively:
directly moves said stage laterally in a positive \u201cX\u201d direction;

provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the notion of the last of said balls longitudinally in a positive \u201cY\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls vertically in a positive \u201cZ\u201d direction;

said stage having spring means functionally associated therewith which resist said positive direction lateral, longitudinal and vertical motions, such that when said means which project through said enclosing means that control the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motions are caused to provide laterally directed motion exerted in a negative direction, respectively:
causes the stage to move laterally in a negative \u201cX\u201d direction;
causes the stage to move laterally in a negative \u201cY\u201d direction;
causes the stage to move laterally in a negative \u201cZ\u201d direction.
6. A method of adjusting the position of a deuterium lamp in a monochromator system to optimize monochromator system output, comprising the steps of:
a) providing a monochromator system for selecting a small range of wavelengths In a beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions, said monochromator system comprising:
deuterium source means for providing of a beam of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter means;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
such that in use a beam of electromagnetic radiation provided by said Deuterium source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position;
reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;

said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
the improvement being that:
said Deuterium source means is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means via means which project through said enclosing means, the control for each of the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motion providing laterally directed motion which, when exerted in a positive direction respectively:
directly moves said stage laterally in a positive \u201cX\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls longitudinally in a positive \u201cY\u201d direction;
provides lateral motion to the first of a sequential multiplicity of balls present in a channel, which channel is shaped to direct the motion of the last of said balls vertically in a positive \u201cZ\u201d direction;
said stage having spring means functionally associated therewith which resist said positive direction lateral, longitudinal and vertical motions, such that when said means which project through said enclosing means that control the \u201cX\u201d, \u201cY\u201d and \u201cZ\u201d direction motions are caused to provide laterally directed motion exerted in a negative direction, respectively:
causes the stage to move laterally in a negative lateral \u201cX\u201d direction;
causes the stage to move laterally in a negative longitudinal \u201cY\u201d direction;
causes the stage to move laterally in a negative vertical \u201cZ\u201d direction.

b) from outside said substantially enclosed space containing enclosing means operating said mirror means for selecting between said Xenon and Deuterium lamps such that the Deuterium lamp is selected and is caused to provide electromagnetic radiation to said first slit means;
c) from outside said substantially enclosed space containing enclosing means adjusting the location of said stage which enables X-Y-Z position adjustment by causing at least one selection from the group consisting of said X, Y and Z position adjustment means, while monitoring electromagnetic radiation output from said pin hole;
to the end that said electromagnetic radiation output from said pin hole is optimized.
7. An polarimeter or ellipsometer system comprising a
monochromator system, said polarimeter or ellipsometer system comprising;
a source system comprising:
a source of electromagnetic radiation: and
a polarization state modifier system:

a stage for supporting a sample system; and
a plurality of polarization state detector systems, each of which comprises:
a polarization state analyzer: and
a detector system;
such that a beam of electromagnetic radiation is produced by said source of electromagnetic radiation and caused to pass through said polarization state modifier system, interact with a sample system placed on said stage for supporting a sample system, pass through a polarization state analyzer and enter a detector system in the pathway thereof, the mounting of said plurality of polarization state detector systems being in a manner which allows easily, sequentially, placing a first and then a second thereof so as to receive said beam of electromagnetic radiation, without required removal of any of said plurality of polarization state detector systems from said ellipsometer system;
which source of electromagnetic radiation comprises a monochromator system for selecting a small range of wavelengths in a polychromatic beam of electromagnetic radiation, which monochromator system functionally sequentially comprises within in a substantially enclosed space containing enclosing means having vertical, longitudinal and lateral dimensions:
said source of electromagnetic radiation;
first slit providing means;
first mirror;
first stage comprising a plurality of gratings, each of which can be rotated into a functional position;
second mirror providing element;
second slit providing means;
third mirror;
second stage comprising a plurality of gratings, each of which can be rotated into a functional position;
fourth mirror;
order sorting filter leans;
pin hole providing means;
and further comprises beam chopper means after said source means for providing of a beam of electromagnetic radiation;
said source means for providing of a beam of electromagnetic radiation comprising both Xenon and Deuterium Lamps and source
selecting mirror and motion imparting means for selecting therebetween;
said second mirror being laterally present between said first mirror and said second stage which comprises a plurality of gratings, and said third mirror being laterally positioned between said first stage which comprises a plurality of gratings and said fourth mirror,
said first mirror and second mirror and said second stage comprising a plurality of gratings as a group being longitudinally removed from said first stage which comprises a plurality of gratings and said third mirror and said fourth mirror;
there being first electromagnetic radiation blocking baffle means positioned between said source means for providing of a beam of electromagnetic radiation and said first stage comprising a plurality of gratings;
there being second electromagnetic radiation blocking baffle means positioned between said second mirror providing element and said second stage comprising a plurality of gratings;
there being third electromagnetic radiation blocking baffle means positioned between said third mirror providing element and said first stage comprising a plurality of gratings;
there being fourth electromagnetic radiation blocking baffle means positioned between said first and second mirrors;
there being fifth electromagnetic radiation blocking baffle means positioned between said third and fourth mirrors;
there being sixth electromagnetic radiation blocking baffle means positioned between said second stage comprising a plurality of gratings and said pin hole providing means;
such that in use a beam of electromagnetic radiation provided by said source means for providing of a beam of electromagnetic radiation is:
caused to pass through said first slit;
reflect from said first mirror;
interact with one of said plurality of gratings on said first stage which is rotated into a functional position* reflect from said second mirror;
pass through said second slit;
reflect from said third mirror;
interact with one of said plurality of gratings on said second stage, which is rotated into a functional position;
reflect from said fourth mirror, proceed through order sorting filtering means;

said beam of electromagnetic radiation further being chopped by said chopping means;
with monochromator selected wavelengths being caused to exit through said pinhole;
said monochromator being characterized by at least one selection from the group consisting of:
said Deuterium lamp is mounted on a stage which enables three dimensional X-Y-Z positioning motion controlled from outside said enclosing means;
said beam chopping means, source selecting mirror and motion imparting means, first slit providing means, first stage comprising a plurality of gratings and associated rotation imparting means, second slit providing means, second stage comprising a plurality of gratings and associated rotation imparting means, all have electrical plug-insocket means;
and a mother printed circuit board which provides traces which in use carry electrical energy to said source selecting mirror motion imparting means, said first slit providing means, said first stage comprising a plurality of gratings and associated rotation imparting means, said second slit providing means, said second stage comprising a plurality of gratings and associated rotation imparting means; conductive traces on said mother printed circuit board providing access at a socket means which is extended outside said substantially enclosed space defining enclosing means.