All The Claims

1. An image processing apparatus, comprising:
image forming means for forming an image on a sheet;
image reading means, disposed above said image forming means with a void space part formed between said image forming means and said image reading means, for reading image information from an original having the image information recorded thereon; and
a sheet delivery part arranged to deliver the sheet having the image formed thereon by said image forming means into said void space part formed between said image forming means and said image reading means,
wherein said image reading means is supported by a support part provided on a frame body in which said image forming means is housed, and is arranged to be horizontally swingable around said support part.
2. An image processing apparatus according to claim 1, further comprising driving means, disposed within said support part, for causing said image reading means to swing.
3. An image processing apparatus according to claim 1, further comprising a table part disposed below said image reading means and supported in a swingable manner by said support part.
4. An image processing apparatus according to claim 3, wherein said table part and said image reading means are respectively formed as module units independently of each other.
5. An image processing apparatus according to claim 4, wherein said module units can be stacked in a plurality of layers by said support part.
6. An image processing apparatus according to claim 5, wherein said module units stacked in a plurality of layers are arranged respectively to be swingable around said support part independently of each other.
7. An image processing apparatus according to claim 3, wherein said table part is arranged to be swingable independently of a swinging motion of said image reading means.
8. An image processing apparatus according to claim 3, further comprising control means, housed in an interior of said table part, for controlling said image processing apparatus.
9. An image processing apparatus according to claim 1, further comprising an operation part disposed above said support part and arranged to permit an operation on said image processing apparatus and to display a working state of said image processing apparatus.
10. An image processing apparatus according to claim 9, wherein said operation part is arranged to be turnable independently of said image reading means.
11. An image processing apparatus according to claim 1, further comprising electric power storage means capable of storing electric power supplied from an external power source, said image processing apparatus being able to be operated with electric power stored in said electric power storage means.
12. An image processing apparatus, comprising:
image forming means for forming an image on a sheet;
image processing means for performing a predetermined processing action on a medium having image information or on electronic information inputted;
an operation part arranged to permit operations on said image forming means and said image processing means; and
a transmitting-receiving part provided for wireless communication of electronic information with an external terminal.
13. An image processing apparatus according to claim 12, wherein said operation part is disposed above said image forming means and said image processing means, and said transmitting-receiving part is disposed at a frame part holding said operation part.
14. An image processing apparatus according to claim 12, wherein said operation part is provided with display means for displaying states of said image forming means and said image processing means, and said transmitting-receiving part is disposed at a frame part holding said display means.
15. An image processing apparatus according to claim 13, wherein said display means is arranged to be displaceable between a position where a surface of said display means is located approximately on the same plane as a main surface of said operation part and a position where the surface of said display means is in a state of being erected from the main surface of said operation part.
16. An image processing apparatus according to claim 14, wherein said display means is a touch-sensor-type liquid crystal panel arranged to permit input operations on said image forming means and said image processing means.
17. An image processing apparatus according to claim 16, wherein said liquid crystal panel serves also as an interface having a fingerprint recognizing function.
18. An image processing apparatus according to claim 12, wherein said operation part is arranged to be horizontally turnable around a support part provided on a frame body in which said image forming means and said image processing means are housed.
19. An image processing apparatus according to claim 12, further comprising a second transmitting-receiving part disposed on a side surface part of said support part and provided for wireless communication with the external terminal.
20. An image processing apparatus according to claim 12, wherein said transmitting-receiving part has a function of conducting wireless communication by infrared rays.
21. An image processing apparatus according to claim 19, wherein at least one of said transmitting-receiving part and said second transmitting-receiving part has a function of conducting wireless communication by infrared rays.
22. An image processing apparatus according to claim 12, wherein said transmitting-receiving part has a function of conducting wireless communication by a radio wave.
23. An image processing apparatus according to claim 19, wherein at least one of said transmitting-receiving part and said second transmitting-receiving part has a function of conducting wireless communication by a radio wave.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A manufacturing method of a silicon thin film solar cell, a silicon thin film thereof, having a structure such that an i layer is sandwiched between a p layer and an n layer, is formed on a substrate with a high frequency plasma CVD method, wherein
said i layer is formed with crystalline silicon;
said i layer is formed using plasma with pulse-modulated high frequency power; and
one cycle of pulse modulation includes an ON state for outputting high frequency power and an OFF state for not outputting, an output waveform is modulated to be rectangular, a time of the ON state in the cycle of pulse modulation is 1-100 microseconds, and a time of the OFF state in the cycle is 5 microseconds or longer.
2. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
an average output per cycle of the pulse-modulated high frequency power is equal to an output of high frequency power in a situation wherein a microcrystalline silicon layer is formed under a same material gas condition without pulse modulation.
3. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the crystalline silicon is microcrystalline silicon.
4. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
material gas used in the high frequency plasma CVD is continuously supplied when said i layer is formed with pulse modulation.
5. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the substrate has an area of 0.3 m2 or larger.
6. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the high frequency power has a frequency of 27 MHz or higher.
7. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the silicon thin film solar cell has a single device structure having p, i and n layers all formed with crystalline silicon.
8. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the silicon thin film solar cell has a tandem device structure formed by stacking a solar cell device, at least an i layer thereof is formed with crystalline silicon, and a solar cell device, at least an i layer thereof is formed with amorphous silicon.
9. The manufacturing method of a silicon thin film solar cell according to claim 1, wherein
the silicon thin film solar cell has a tandem device structure formed by stacking a solar cell device having p, i and n layers all formed with crystalline silicon and a solar cell device having p, i and n layers all formed with amorphous silicon.

What is claimed is:

1. An organic EL panel comprised of a plurality of pixels, each of the plurality of pixels comprising an organic layer disposed between a lower electrode and an upper electrode,
wherein the plurality of pixels repair themselves when a backward bias voltage equal to or less than a withstand voltage of the organic layer in a voltage application condition at a time of use is applied thereto.
2. The organic EL panel of claim 1, wherein the organic layer includes a light-emitting layer disposed between the lower electrode and the upper electrode.
3. The organic EL panel of claim 1, further comprising a resin protective film comprising a resin disposed on the upper electrode to cover the plurality of pixels, the resin protective film including oxygen as a constituent element,
whereby the resin protective film decomposes and releases a low molecular weight substance including oxygen when the lower and upper electrode short-circuit and when the backward bias voltage equal to or less than the withstand voltage of the organic layer in the voltage application condition at the time of use is applied.
4. The organic EL panel of claim 3, wherein the upper electrode and the organic layer are successively laminated on the lower electrode.
5. The organic EL display device of claim 3, wherein the resin protective film comprises a silicon resin.
6. The organic EL display device of claim 3, wherein the resin protective film comprises a fluororesin.
7. The organic EL display device of claim 3, further comprising an inorganic protective film comprised of inorganic matter, wherein the inorganic protective film is intervened between the resin protective film and the upper electrode, is formed by atomic layer epitaxy and the film thickness thereof is 200 nm or less.
8. The organic EL display device of claim 3, further comprising a gas-trapping getter inserted between the upper electrode and the resin protective film.
9. The organic EL display device of claim 3, further comprising a laminate film comprising metal foil or a laminate sheet formed by adhering together a metal film and resin films disposed on the resin protective film, wherein the laminate film is for shielding the plurality of pixels and the resin protective film from outside air.
10. The organic EL display device of claim 3, wherein the resin protective film comprises a desiccant mixed therein.
11. The organic EL panel of claim 1, wherein the withstand voltage of the organic layer is determined when the organic EL panel is driven for 1 minute or less in the voltage application condition at the time of use.
12. The organic EL panel of claim 1, wherein the backward bias voltage is of, or less than of, the withstand voltage of the organic layer.
13. The organic EL panel of claim 1, wherein an electric field intensity of the organic layer is 3106 Vcm or greater when the withstand voltage of the organic layer is expressed as an electric field intensity per unit thickness of the organic layer.
14. The organic EL panel of claim 1, wherein an electric field intensity of the organic layer is 3.4106 Vcm or greater excluding a conductive organic film from the organic layer when the withstand voltage of the organic layer is expressed as an electric field intensity per unit thickness of the organic layer.
15. The organic EL panel of claim 1, wherein when the backward bias voltage is represented as Vr, the thickness of the upper electrodes is represented as Da, and the ratio VrDa between Vr and Da is represented as Xa, Xa is 2.2106 Vcm or greater.
16. The organic EL panel of claim 15, wherein Xa is 2.2106 Vcm or greater as a result of the thickness Da of the upper electrodes being thinned to 100 nm or less.
17. The organic EL display device of claim 15, wherein the thickness Da of the upper electrodes is thinned to 100 nm or less, whereby Xa is 2.2106 Vcm or greater.
18. The organic EL panel of claim 1, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.2106 Vcm or greater and 2.2106 Vcm or less.
19. The organic EL panel of claim 1, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer excluding a conductive organic film is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.4106 Vcm or greater and 2.4106 Vcm or less.
20. The organic EL panel of claim 1, wherein the plurality of pixels are sealed with a gas including a gas that increases susceptibility to burn at 0.5% or more.
21. The organic EL panel of claim 1, wherein an average surface roughness Ra is 2 nm or less as the surface roughness of the lower electrode.
22. A method for repairing an organic EL panel comprised of a plurality of pixels, each of the plurality of pixels comprises an organic layer, a lower electrode and an upper electrode, wherein the organic layer includes a light-emitting layer disposed between the lower electrode and the upper electrode, the method comprising:
applying a backward bias voltage equal to or less than the withstand voltage of the organic layer in a voltage application condition at a time of use so that the pixels repair themselves.
23. The method of claim 22, wherein the withstand voltage when the organic EL panel is driven for 1 minute or less in the voltage application condition at the time of use is used as the withstand voltage of the organic layer.
24. The method of claim 22, wherein a voltage that is of, or less than of, the withstand voltage of the organic layer is used as the backward bias voltage.
25. The method of claim 22, an electric field intensity of the organic EL panel is 3106 Vcm or greater when the withstand voltage of the organic layer is expressed as an electric field intensity per unit thickness of the organic layer.
26. The method of claims 22, wherein an electric field intensity of the organic EL panel is 3.4106 Vcm or greater excluding a conductive organic film from the organic layer in a case when the withstand voltage of the organic layer is expressed as an electric field intensity per unit thickness of the organic layer.
27. The method of claim 22, wherein when the backward bias voltage is represented as Vr, the thickness of the upper electrodes is represented as Da, and the ratio VrDa between Vr and Da is represented as Xa, Xa is 2.2106 Vcm or greater.
28. The method of claim 27, wherein Xa is 2.2106 Vcm or greater as a result of thinning the thickness Da of the upper electrodes to 100 nm or less.
29. The method of claim 22, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.2106 Vcm or greater and 2.2106 Vcm or less.
30. The method of claim 22, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer excluding a conductive organic film is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.4106 Vcm or greater and 2.4106 Vcm or less.
31. The method of claim 22, wherein the applying of the backward bias voltage is conducted in a state where the pixels are sealed with a gas including a gas that increases susceptibility to burn at 0.5% or more.
32. The method of claim 31, wherein a panel is used where an average surface roughness Ra is 2 nm or less as the surface roughness of the lower electrodes.
33. The method of claim 22, wherein a panel is used where an average surface roughness Ra is 2 nm or less as the surface roughness of the lower electrodes.
34. An organic EL display device comprising:
a pixel that comprises a lower electrode, an organic layer including a light-emitting layer and an upper electrode successively laminated; and
a resin protective film comprising a resin disposed on the upper electrodes so as to cover the pixel, the resin protective film including oxygen as a constituent element, whereby the resin protective film decomposes and releases a low molecular weight substance including oxygen when the lower and upper electrodes short-circuit and when a backward bias voltage equal to or less than a withstand voltage of the organic layer in a voltage application condition at the time of use is applied.
35. The organic EL display device of claim 34, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.2106 Vcm or greater and 2.2106 Vcm or less.
36. The organic EL display device of claim 34, wherein when the backward bias voltage is represented as Vr, the thickness of the organic layer excluding a conductive organic film is represented as Dy, and the ratio VrDy between Vr and Dy is represented as Ya, Ya is 1.4106 Vcm or greater and 2.4106 Vcm or less.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1-67. (canceled)
68. A method of making a nanoreinforced carbon fiber comprising:
coating a nanoreinforcement material with a powder coat to form a powder coated nanoreinforcement material, wherein the powder coat is a thermoplastic or adhesive; and
contacting at least one carbon fiber with the powder coated nanoreinforcement material to form a coated carbon fiber.
69. The method of claim 68, wherein the at least one carbon fiber is contacted with the powder coated nanoreinforcement material so that the carbon fiber contains from 0.1 to 20 percent by weight of nanoreinforcement material.
70. The method of claim 69, wherein theft at least one carbon fiber is contacted with the powder coated nanoreinforcement material so that the carbon fiber contains from 2 to 8 percent by weight of nanoreinforcement material.
71. The method of claim 69, wherein the carbon fiber is comprised of carbon, glass, aramid or boron.
72. The method of claim 69, wherein the nanoreinforcement material comprises carbon nanotubes, carbon nanofibers, graphene sheets, fullerenes, nanoparticles, nanowires, or a combination thereof.
73. The method of claim 69, further comprising bundling a plurality of the coated carbon fiber to form a tow or yarn.
74. The method of claim 69, wherein the coated carbon fiber is sized.
75. The method of claim 73, further comprising the step of aligning the nanoreinforcement material within the tow or yarn.
76. The method of claim 68, further comprising a step of heating or pressing the coated carbon fiber, or a combination thereof.
77. Aircraft and aircraft components, comprising composite material containing carbon fiber, wherein the carbon fiber comprises from 0.1 to 20 percent by weight nanoreinforcement material.
78. The aircraft components of claim 77, wherein the aircraft components are nacelles or nacelle components for use in aircraft.
79. The aircraft and aircraft components of claim 77, wherein the carbon fiber comprises from 2 to 8 percent by weight nanoreinforcement materials.
80. The aircraft and aircraft components of claim 77, in which the nanoreinforcement material is selected from the group consisting of carbon nanotubes, carbon nanofibers, graphene sheets, nanowires, nanoparticles of elements, nanoparticles of binary compounds, nanoparticles of complex compounds, and combinations thereof.
81. The aircraft and aircraft components of claim 77, wherein the nanoreinforcement material is sized or metallic coated or thermoplastic coated to assist in dispersion, application, or multifunctionality.
82. The aircraft and aircraft components of claim 80, wherein the nanoreinforcement material is comprised of carbon nanotubes.
83. The aircraft and aircraft components of claim 77, wherein the fiber comprises carbon, glass, aramid, or polymer fibers, alone or in combination.
84. The aircraft and aircraft components of claim 83, wherein a plurality of fibers are bundled to form a tow or yarn.
85. The aircraft and aircraft components of claim 84, wherein the fibers are sized.
86. The aircraft and aircraft components of claim 84, wherein the nanoreinforcement material is aligned within the tow or yarn.
87. The aircraft and aircraft components of claim 84, wherein the fiber tow comprises one or more carbon, glass, aramid and polymer fibers, alone or in combination.