What is claimed is:
1. An implantable body fluid shunt device for providing fluid communication between body vessels of a patient, said device comprising:
a generally elongated shunt body having proximal and distal ends, said shunt body being formed of a rigid, biocompatible material;
said shunt body having:
a first proximal aperture and at least one second aperture longitudinally spaced along said shunt body from said first aperture; and
a diversion tube having a predetermined shape providing fluid communication between said first aperture and said at least one second aperture;
wherein, in use, said device is implanted in a patient such that said first aperture is disposed within a first vessel, and said at least one second aperture is disposed in a second vessel.
2. The implantable shunt device of claim 1, wherein said shunt body further comprises a spike portion at a distal end thereof.
3. The implantable shunt device of claim 1, wherein said shunt body further comprises expansible retention members at a distal end thereof.
4. The implantable shunt device of claim 1, wherein said device provides transmyocardial blood perfusion, and wherein said second aperture is adjacent said distal end of said shunt body and in use is disposed within the left ventricle of a patient.
5. The implantable shunt device of claim 4, wherein the first aperture is adjacent said proximal end of said shunt body and in use is disposed within a coronary artery of a patient.
6. The implantable shunt device of claim 2, wherein the second aperture in use is situated within the coronary artery of a patient and wherein said spike portion is disposed within the myocardium.
7. The implantable shunt device of claim 6, wherein the first aperture is adjacent said proximal end of said shunt body, wherein said first aperture is disposed within a venous or arterial graft.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An image detection apparatus comprising:
a plurality of image layers comprising a first image layer and a plurality of secondary image layers, each of the plurality of image layers comprising:
a plurality of radiation sensitive units configured to absorb radiation from a radiation source, the radiation comprising radiation incident to the plurality of layers of radiation sensitive units;
a plurality of converters coupled to the plurality of radiation sensitive units, the plurality of converters being operable to convert the radiation absorbed from the radiation source into a plurality of particles;
a plurality of sensors coupled to the plurality of radiation sensitive units and coupled to the plurality of converters, the plurality of sensors being sensitized to the plurality of particles and configured to generate charged particles from the plurality of particles; and
an electronic circuit for processing the charged particles from the plurality of sensors to generate a digital image;
wherein the radiation from the radiation source has a corresponding energy level,
wherein the first image layer is sensitive to radiation at a first energy level, and the plurality of secondary image layers are sensitive to radiation at a second energy level different from the first energy level,
further wherein the plurality of converters in each of the plurality of secondary image layers has a corresponding pixel resolution, and the pixel resolution of each of the plurality of converters is different from the pixel resolution of the plurality of converters in other image layers of the plurality of secondary image layers.
2. The apparatus of claim 1 wherein the plurality of image layers is arranged in a two-dimensional array.
3. The apparatus of claim 1 wherein the plurality of image layers is vertically stacked.
4. The apparatus of claim 1 wherein the radiation comprises visible light.
5. The apparatus of claim 1 wherein the radiation comprises X-ray radiation.
6. The apparatus of claim 1 wherein the charged particles comprise electron hole pairs.
7. The apparatus of claim 1 wherein at least one of the plurality of sensors comprises a photo-diode array.
8. The apparatus of claim 1 wherein at least one of the plurality of sensors comprises an amorphous silicon (a-Si) photo diode array.
9. The apparatus of claim 1 wherein at least one of the plurality of sensors comprises an amorphous silicon (a-Si) transistor array.
10. The apparatus of claim 1, wherein at least one of the plurality of sensors comprises an organic semiconductor photo diode array.
11. The apparatus of claim 1, wherein at least one of the plurality of sensors comprises an organic semiconductor transistor array.
12. The apparatus of claim 1 wherein at least one of the plurality of converters comprises a layer of scintillators.
13. The apparatus of claim 12 wherein the plurality of converters for a top layer of the plurality of image layers comprises a layer of scintillators.
14. The apparatus of claim 1 wherein at least one of the plurality of sensors comprises an amorphous silicon (a-Si) thin film transistor array.
15. The apparatus of claim 1 wherein a sensor of the plurality of sensors is sensitive to light.
16. The apparatus of claim 1 wherein a converter of the plurality of converters is sensitive to light.
17. The apparatus of claim 1 further comprising a plurality of anti-scatter grids.
18. The apparatus of claim 1 wherein the radiation from the radiation source is comprised of a plurality of particles, the plurality of particles consisting of at least one of the group of particles which includes: electrons, protons, ions and photons.
19. The apparatus of claim 1, wherein the electronic circuit comprises an application specific integrated circuit (ASIC).
20. A method for generating an image in a digital imaging system comprising:
receiving an incident radiation beam in a plurality of image layers comprising a first image layer and a plurality of secondary image layers, each image layer being implemented to include a plurality of radiation sensitive units, a plurality of converters, and a plurality of sensors,
converting, in a plurality of converters comprised in the first image layer, a first portion of the incident radiation beam into a first plurality of particles, the remaining portion of the incident radiation beam comprising pass through radiation;
generating, in a plurality of sensors comprised in the first image layer, a plurality of charged particles from the first plurality of particles;
converting, in the plurality of secondary image layers, the pass through radiation into a second plurality of particles;
generating a second plurality of charged particles from the second plurality of particles in the plurality of sensors in the plurality of secondary image layers; and
processing the first and second pluralities of charged particles to generate a digital image in an electronic circuit,
wherein the first image layer is sensitive to radiation at a first energy level, and the plurality of secondary image layers are sensitive to radiation at a second energy level different from the first energy level,
wherein the plurality of converters in each image layer of the plurality of secondary image layers has a resolution that is different than that of plurality of converters in other image layers of the plurality of secondary mage layers.
21. The method of claim 20 wherein the incident radiation comprises X-rays.
22. The method of claim 20 further comprising reducing object scatter by implementing a plurality of anti-scatter grids.
23. The method of claim 20 wherein the incident radiation comprises visible light.
24. The method of claim 20 wherein the first and second pluralities of charged particles comprise a plurality of electron hole pairs.
25. The method of claim 20 wherein the incident radiation beam is comprised of a plurality of particles, the plurality of particles being comprised of at least one of the group of particles which includes: electrons, protons, ions and photons
26. The method of claim 20 wherein at least one of the plurality of sensors comprises a photo-diode array.
27. The method of claim 26, wherein the photo-diode array is an amorphous silicon (a-Si) photo diode array.
28. The method of claim 20 wherein the at least one of the plurality of converters comprises a plurality of scintillators
29. The method of claim 20 wherein at least one of the plurality of sensors comprises an amorphous silicon (a-Si) thin film transistor array.
30. The method of claim 20, wherein at least one of the plurality of sensors comprises an organic semiconductor photo diode array.
31. The method of claim 20, wherein at least one of the plurality of sensors comprises an organic semiconductor transistor array.
32. The method of claim 20 wherein the electronic circuit comprises an application-specific integrated circuit (ASIC).
33. A method for generating an image from a radiation beam, the method comprising:
receiving a plurality of radiation particles in an imaging device;
converting the plurality of radiation particles into a plurality of photons;
converting the plurality of photons into a plurality of electron hole-pairs;
transferring the plurality of electron hole-pairs to a readout circuit;
generating an output in the readout circuit from the plurality of electron hole-pairs; and
processing the output from the readout circuit to generate a data image,
wherein the imaging device comprises a first paired layer and a plurality of secondary paired layers, each pair of layers comprising a converting layer and a sensor layer corresponding to the converting layer, and radiation sensitive units,
wherein the radiation sensitive units comprising the first paired layer are sensitive to an energy level different than the radiation sensitive units comprising the plurality of secondary paired layers,
further wherein the converting layers comprising the plurality of secondary paired layers have varying resolutions.
34. (canceled)
35. The method of claim 44 33, wherein a converting layer comprises a scintillator layer.
36. The method of claim 35, wherein the converting the plurality of radiation particles into a plurality of photons is performed in the scintillator layer.
37. The method of claim 34, wherein at least one layer of the first paired layer and the plurality of secondary paired layers comprises an amorphous silicon (a-Si) photo diode array.
38. The method of claim 37, wherein the converting the plurality of photons into a plurality of electron hole-pairs is performed by the amorphous silicon (a-Si) photo diode array.
39. The method of claim 34, wherein a at least one paired layer of the plurality of secondary paired layers comprises an amorphous silicon (a-Si) thin film transistor array.
40. The method of claim 39, wherein the transferring the plurality of electron hole-pairs to a readout circuit is performed through the amorphous silicon (a-Si) thin film transistor array.
41. The method of claim 34, wherein at least one layer of the first paired layer and the plurality of secondary paired layers comprises an organic semiconductor transistor array.
42. The method of claim 41, wherein the converting of the plurality of photons into a plurality of electron hole-pairs is performed by the organic semiconductor photo diode array.
43. the method of claim 34, wherein a at least one layer of the first paired layer and the plurality of paired layers comprises an organic semiconductor transistor array.
44. The method of claim 43, wherein the transferring of the plurality of electron hole-pairs to a readout circuit is performed through the organic semiconductor transistor array.
45. The method of claim 34, wherein the readout circuit comprises an application-specific integrated circuit (ASIC).
46. The image detection apparatus of claim 1, further comprising a plurality of sub-imagers, each of the plurality of sub-imagers being coupled and corresponding to one of:
the first image layer and a secondary image layer of the plurality of image layers, and configured to generate sub-images corresponding to the radiation received in the corresponding image layer.
47. The image detection apparatus of claim 46, wherein the electronic circuit re-samples and interpolates the sub-images from the plurality of sub-imagers to generate the digital image.
48. The image detection apparatus of claim 47, wherein the electronic circuit selectively collects sub-images from the plurality of sub-imagers to re-sample and interpolate.
49. The method of claim 20, wherein processing the first and second pluralities of charged particles to generate a digital image in an electronic circuit comprises re-sampling and interpolating a plurality of sub-images, the plurality of sub-images being generated by sub-imagers coupled to each of the plurality of image layers.
50. The method of claim 49, wherein the plurality of sub-images are selectively collected by the electronic circuit from the plurality of sub-imagers.
51. The method of claim 33, wherein generating an output in the readout circuit from the plurality of electron hole-pairs comprises generating a plurality of sub-images, the plurality of sub-images being generated by sub-imagers coupled to each of the plurality of image layers.
52. The method of claim 51, wherein processing the output from the readout circuit to generate a data image comprises selectively collecting the sub-images from the plurality of sub-imagers.
53. The method of claim 51, wherein processing the output from the readout circuit to generate a data image comprises re-sampling and interpolating a plurality of sub-images.