All The Claims

1. A machine tool for processing workpieces, the machine tool comprising:
a machine bed,
two side walls,
which side walls are arranged to be substantially parallel to one another,
which side walls are arranged respectively with a side wall bottom side on the machine bed, and,
which side walls respectively have a side wall top side,

a z-slide,
which z-slide is arranged in the region of the side wall top side on the side walls, and,
which z-slide can be moved by means of a z-drive motor in a horizontal z-direction on the side walls,

an x-slide,
which x-slide is arranged on the z-slide, and,
which x-slide can be moved by means of an x-drive motor in a horizontal x-direction on the z-slide, and,

a rotary-driven tool spindle for mounting a tool,
which spindle is arranged suspended on the x-slide, and,
which spindle can be moved by means of a y-drive motor in a vertical y-direction on the x-slide,

wherein
the side walls each comprise a basic body, a support projection, and a front overhanging projection arranged thereon, and wherein:
each of the front overhanging projections is in alignment with the associated basic body so that the z-slide can be moved on both the respective overhanging projection and the respective basic body, and wherein first spaces are formed directly underneath the front overhanging projections, and wherein a second space lying between said first free spaces forms a processing space for processing a workpiece with the tool mounted on the tool spindle,

and the machine tool further comprising:
at least one workpiece positioning unit for positioning the workpiece to be processed, the at least one workpiece positioning unit being positioned in the processing space and in the first spaces, each support projection being arranged directly below a respective one of the front overhanging projections, the at least one workpiece positioning unit is supported on an upper surface of each of the support projections, said upper surfaces being spaced from one another in the x-direction.
2. A machine tool according to claim 1, wherein each of the front overhanging projections together with the associated basic body forms the respective side wall top side, and the z-slide is arranged movably on the latter.
3. A machine tool according to claim 1, wherein the at least one workpiece positioning unit is configured to pivot the workpiece about a horizontal axis.
4. A machine tool according to claim 1, wherein each of the front overhanging projections is designed in one piece with the associated basic body.
5. A machine tool according to claim 1, wherein at least one of the side walls comprises at least one feed opening.
6. A machine tool according to claim 5, wherein each of the side walls comprises said at least one feed opening, and wherein said at least one feed opening of one of the side walls is designed to be in alignment with said at least one feed opening of the other of the side walls.
7. A machine tool according to claim 1, wherein a respective z-guide rail is arranged on each of the side wall top sides for guiding the z-slide in the z-direction.
8. A machine tool according to claim 1, wherein the at least one workpiece positioning unit is designed as a rotary-pivot bridge, and a respective bridge drive is arranged on each of the support projections.
9. A machine tool according to claim 1, wherein the at least one workpiece positioning unit comprises two workpiece positioning units, wherein each said support projection upper surface supports a respective one of said two workpiece positioning units, wherein each workpiece positioning unit is provided with a positioning drive and a polygonal workpiece support.
10. A machine tool according to claim 9, wherein each positioning drive is arranged on one of the support projections, and the polygonal workpiece supports extend concentrically on a horizontal pivot axis of the positioning drives into the processing space.
11. A machine tool according to claim 9, wherein the workpiece supports can be pivoted independently of one another by means of the positioning drives about a joint, horizontal pivot axis.
12. A machine tool according to claim 9, wherein on each polygon side of the polygonal workpiece supports, plural workpiece mounts are arranged next to one another, wherein the number of workpiece mounts per polygon side corresponds to the number of tool spindles of the machine tool.
13. A machine tool according to claim 1, wherein each of the support projections is designed to be in one piece with the associated basic body.
14. A machine tool according to claim 1, wherein the at least one workpiece positioning unit comprises:
a first workpiece mount that is arranged in the region of one of the front overhanging projections; and,
a second workpiece mount that is arranged spaced in the x-direction from the first workpiece mount and in alignment with the first workpiece mount.
15. A machine tool according to claim 14, wherein a dividing wall is provided between the first and second workpiece mounts.
16. A machine tool according to claim 1, further comprising a second tool spindle.
17. A machine tool according to claim 1, wherein the at least one workpiece positioning unit is in the form of a rotary-pivot bridge that pivots about a horizontal axis.
18. A machine tool according to claim 1, wherein a separate chip collector is arranged underneath the at least one workpiece positioning unit.
19. A machine tool according to claim 1, wherein a tool magazine is arranged between the side walls.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of manufacturing a ferroelectric recording medium, the method comprising:
forming a supporting layer on a substrate;
patterning the supporting layer;
forming source material layers on lateral surfaces of the patterned supporting layer; and
diffusing a material of the source material layers into the patterned supporting layer.
2. The method of claim 1, wherein a heat treatment induces a diffusion of the material of the source material layers inside the supporting layer and a reaction of the material of the source material layers with the supporting layer.
3. The method of claim 1, wherein the patterning of the supporting layer comprises patterning the supporting layer into one of a polygonal pillar comprising at least three lateral surfaces, and a bar type.
4. The method of claim 1, wherein the supporting layer is formed of one of titanium dioxide (TiO2), vanadium dioxide (VO2), niobium dioxide (NbO2), zirconium dioxide (ZrO2), oxides of iron, titanium nitride (TiN), vanadium nitride (VN), niobium nitride (NbN), zirconium nitride (ZrN), iron nitride (Fe2N), strontium oxide (SrO), strontium nitride (Sr2N3), tantalum oxide (Ta2O5) and tantalum nitride (Ta2N).
5. The method of claim 1, wherein the supporting layer is formed of one of titanium (Ti), vanadium (V), niobium (Nb), zirconium (Zr), iron (Fe), strontium (Sr) and tantalum (Ta).
6. The method of claim 1, wherein the source material layers are formed of a material which reacts with the supporting layer to form a ferroelectric layer formed of one of PZT, strontium bismuth tantalate (SBT), strontium bismuth titanate (SBT), lithium titanate (LTO), lithium tantalate (LTO), SBN, PTO, BFO, BTO, and KNO on the lateral surfaces of the supporting layer.
7. The method of claim 1, wherein the source material layers are based on one of lead (Pb), bismuth (Bi), potassium (K) and lithium (Li).
8. The method of claim 2, wherein the heat treatment is performed at 400\xb0 C. or more using a rapid thermal annealing (RTA) process.
9. A method of manufacturing a ferroelectric recording medium, the method comprising:
forming a supporting layer on a substrate;
forming a mask on the supporting layer to define a portion of the supporting layer;
etching the supporting layer around the mask;
placing a product of the etching in a gas atmosphere comprising a source material gas that reacts with the supporting layer to form a ferroelectric layer;
heat-treating the etched product in the gas atmosphere comprising the source material gas; and
removing the mask.
10. The method of claim 9, wherein the forming of the mask comprises defining the supporting layer to be one of a polygonal pillar comprising at least three lateral surfaces, and a bar type.
11. The method of claim 9, wherein the supporting layer is formed of one of titanium dioxide (TiO2), vanadium dioxide (VO2), niobium dioxide (NbO2), zirconium dioxide (ZrO2), oxides of iron, titanium nitride (TiN), vanadium nitride (VN), niobium nitride (NbN), zirconium nitride (ZrN), iron nitride (Fe2N), strontium oxide (SrO), strontium nitride (Sr2N3), tantalum oxide (Ta2O5) and tantalum nitride (Ta2N).
12. The method of claim 9, wherein the supporting layer is formed of one of titanium (Ti), vanadium (V), niobium (Nb), zirconium (Zr), iron (Fe), strontium (Sr) and tantalum (Ta).
13. The method of claim 9, wherein the source material gas is a material gas that reacts with the supporting layer to form a ferroelectric layer formed of one of PZT, strontium bismuth tantalate (SBT), strontium bismuth titanate (SBT), lithium titanate (LTO), lithium tantalate (LTO), SBN, PTO, BFO, BTO, and KNO on the lateral surfaces of the supporting layer.
14. The method of claim 9, wherein the source material gas is based on one of lead (Pb), bismuth (Bi), potassium (K) or lithium (Li).
15. The method of claim 9, wherein the heat-treating of the etched product is performed at above 400\xb0 C. or more using a rapid thermal annealing (RTA) process.

1. A method of forming a vertical capacitor, comprising:
forming an input electrode and an output electrode spaced apart from each other on a top surface of a substrate;
etching a bottom surface of the substrate to form first via holes, the first via holes being spaced apart from each other to expose the input and output electrodes;
forming a conductive material in the first via holes to form via electrodes connected to the input and output electrodes; and
forming a dielectric layer in the substrate to be interposed between the via electrodes.
2. The method of claim 1, wherein the input and output electrodes are formed by depositing one of Ti, Ta, W, TiN, WN, TaSiN, WSiN, or Au using a sputtering process.
3. The method of claim 1, wherein the via electrodes are formed by depositing one of Ti, Ta, W, Ru, TiN, WN, TaSiN, or WSiN using a sputtering process.
4. The method of claim 1, wherein the forming of the dielectric layer comprises:
etching the substrate to form a second via hole between the via electrodes; and
filling the second via hole with a dielectric material.
5. The method of claim 4, wherein the dielectric layer is formed by one of physical vapor deposition (PVD), chemical vapor deposition (CVD), and atomic layer deposition (ALD) processes.
6. The method of claim 5, wherein the dielectric layer comprises at least one of silicon oxide, aluminum oxide, tantalum oxide, silicon oxynitride, or silicon nitride.
7. A vertical capacitor, comprising:
a substrate;
input and output electrodes provided spaced apart from each other, on a top surface of the substrate;
via electrodes extending from a bottom surface of the substrate to the top surface of the substrate to be electrically connected to the input and output electrodes; and
a dielectric layer provided through the substrate between the via electrodes,
wherein the via electrodes are spaced apart from each other to define a gap, and the via electrodes are not electrically connected with any material disposed within the gap,
wherein each of the via electrodes has a shape of column extending in a vertical direction from the bottom surface to the top surface of the substrate, and each of the column-shaped via electrode is not electrically connected to any inner electrode disposed inside of the substrate between the top and bottom surfaces, and the dielectric layer is not formed as a plurality of laminated layers.
8. The vertical capacitor of claim 7, wherein the via electrodes comprise one of Ti, Ta, W, TiN, WN, TaSiN, WSiN, or Au.
9. The vertical capacitor of claim 7, wherein the dielectric layer is formed of a dielectric material having a dielectric constant greater than that of the substrate.
10. The vertical capacitor of claim 9, wherein the dielectric layer comprises at least one of silicon oxide, aluminum oxide, tantalum oxide, silicon oxynitride, or silicon nitride.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method of releasing stored hydrogen comprising the steps of:
providing a material comprising hydrogen fixed fullerenes; and
irradiating said material in a substantially oxygen free environment with electromagnetic radiation of a sufficient intensity to dehydrogenate said material.
2. The method of claim 1, wherein said electromagnetic radiation ranges from 10\u221212 m to 1012 m in wavelength and comprises gamma rays, x-rays, extreme ultraviolet, ultraviolet, visible, infrared, microwave, radio wave or any combination thereof.
3. The method of claim 2, wherein said electromagnetic radiation is coherent or incoherent.
4. The method of claim 1, wherein said oxygen free environment comprises a vacuum or a non-oxidizing gas atmosphere.
5. The method of claim 1, wherein said hydrogen fixed fullerenes comprises hydrogen fixed to fullerenes, endohedral fullerenes, substituted fullerenes, functionalized fullerenes, or any mixture thereof.
6. The method of claim 1, wherein said material comprises CxHy, wherein x is 28 to 1500, and, y is 2 to x.
7. The method of claim 1, wherein said material comprises CxMyHz, where M is a metal, x is 28 to 1500, y is 1 to x, and z is 2 to x.
8. The method of claim 1, wherein said material comprises a plurality of hydrogen fixed fullerenes secured by a carrier or matrix.
9. The material of claim 8, wherein said carrier or matrix comprises an organic gas, liquid or solid; an inorganic gas, liquid, or solid; a polymer or polymer composite; water, an aqueous solution or aqueous suspension; a metal or metal alloy, a glass or ceramic; a biological or biologically derived material; or any mixture thereof.
10. The method of claim 8, wherein said material comprises a hydrogen fixed fullerene coated polymeric tape.