All The Claims

1. A method of actuating a semiconductor device comprising:
providing a transistor including:
a substrate;
a first electrically conductive material layer positioned on the substrate; and
a second electrically conductive material layer in contact with and positioned on the first electrically conductive material layer, the second electrically conductive material layer including a reentrant profile, the second electrically conductive material layer overhanging the first electrically conductive material layer;
an electrically insulating material layer conformally positioned over the second electrically conductive material layer, the first electrically conductive material layer, and at least a portion of the substrate;
a semiconductor material layer that conforms to and is in contact with the electrically insulating material layer;
a third electrically conductive material layer nonconformally positioned over and in contact with a first portion of the semiconductor material layer;
a fourth electrically conductive material layer nonconformally positioned over and in contact with a second portion of the semiconductor material layer;

applying a voltage between the third electrically conductive material layer and the fourth electrically conductive material layer; and
applying a voltage to the first electrically conductive material layer to electrically connect the third electrically conductive material layer and the fourth electrically conductive material layer.
2. The method of claim 1, the third electrically conductive material layer and the fourth electrically conductive material layer being different portions of the same material layer, wherein applying a voltage between the third electrically conductive material layer and the fourth electrically conductive material layer includes applying a voltage to different discontinuous portions of the same material layer.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A method for sensing a microwave magnetic field polarization component of a microwave field generated by a microwave device, comprising the steps of:
generating a static magnetic field having a predetermined amplitude and a predetermined direction relative to the microwave magnetic field polarization component to be sensed,
preparing an atom cloud of ultracold probe atoms in defined hyperfine levels, wherein the hyperfine levels of the probe atoms are split in transition frequencies by the static magnetic field,
applying a microwave pulse including the microwave magnetic field polarization component to be sensed to the atom cloud, wherein a spatial state distribution of the probe atoms is created by Rabi oscillations during the microwave pulse between the hyperfine levels of the probe atoms being resonant with the microwave magnetic field polarization component, and
collecting a state image of the probe atoms, said state image depending on the spatial state distribution of the probe atoms and representing the magnetic field polarization component to be sensed.
2. A method according to claim 1, wherein
the preparing of the atom cloud includes the steps of providing the probe atoms in an atom trap and expanding the atom cloud, and
the state image represents a distribution of the microwave magnetic field polarization component in a space covered by the expanded atom cloud.
3. A method according to claim 2, wherein
the expansion of the atom cloud is obtained by opening the atom trap in at least one spatial direction, by at least one of a thermal expansion of the atom cloud and a mean-field repulsion expansion of the atom cloud.
4. A method according to claim 2, wherein
the microwave pulse is applied with a predetermined delay time after opening the atom trap.
5. A method according to claim 2, wherein
an anisotropic expansion of the atom cloud is provided by an anisotropic atom trap or by an anisotropic adjustment of the atom trap.
6. A method according to claim 1, wherein
the step of preparing the atom cloud includes confining the probe atoms in a spatially restricted region of investigation.
7. A method according to claim 6, wherein.
the state image represents the averaged microwave magnetic field polarization component in the region of investigation.
8. A method according to claim 6, wherein
the step of preparing the atom cloud includes at least one of spatially restricted adjusting the resonant hyperfine levels using at least one of a magnetic field gradient and an optical field, and trapping the atom cloud in an atom trap.
9. A method according to claim 6, wherein
the steps of preparing the atom cloud, applying the microwave pulse and collecting the state image are sequentially repeated in a plurality of regions of investigation.
10. A method according to claim 9, including the step of
moving the atom cloud and the microwave device relative to each other before repeating at least one of the preparing, applying and collecting steps or during the preparing steps.
11. A method according to claim 8, wherein
multiple atom traps are generated simultaneously in the static magnetic field, and
the steps of preparing the atom cloud, applying the microwave pulse and collecting the state image are simultaneously conducted in all atom traps so that a plurality of microwave magnetic field polarization components at multiple locations of the microwave field are sensed simultaneously.
12. A method according to claim 1, wherein
the steps of preparing the atom cloud, applying the microwave pulse and collecting the state image are sequentially repeated with a plurality of microwave pulse parameters, in particular pulse power and duration, resulting in a plurality of state images.
13. A method according to claim 1, comprising at least one of the steps of
matching the resonant hyperfine levels to a predetermined frequency of the microwave field to be sensed by setting the static magnetic field,
matching the resonant hyperfine states at a predetermined static magnetic field by adjusting the microwave frequency to be sensed, and
selecting a type of the probe atoms in dependency on a predetermined frequency range of the microwave field to be sensed.
14. A method according to claim 1, wherein
at least one additional microwave or radio-frequency auxiliary field is applied to the atoms in order to drive multi-photon Raman transitions.
15. A method according to claim 1, wherein
the steps of generating a static magnetic field, preparing the atom cloud, applying the microwave pulse and collecting the state image are sequentially repeated with at least one of varying directions of the static magnetic field and varying hyperfine levels being resonant so that multiple microwave magnetic field polarization components are sensed.
16. A method according to claim 15, comprising at least one of the steps of:
extracting amplitudes of the magnetic field components of the microwave field from the multiple microwave magnetic field polarization components, and
extracting relative phases of the magnetic field polarization components of the microwave field from the multiple microwave magnetic field polarization components.
17. A method according to claim 16, wherein
a Ramsey interferometer sequence is used to measure at least one of a differential potential between different hyperfine levels, in particular an off-resonant microwave field or light field, and an absolute microwave component phase distribution.
18. A method according to claim 1, wherein the microwave device is arranged
in a vacuum environment where the atom cloud is prepared, or
in an environment of ambient, in particular atmospheric pressure being separated from a vacuum environment of the atom cloud by a shielding window.
19. A method according to claim 1, wherein
the step of collecting the state image of the atom cloud comprises collecting an absorption image or a fluorescence image.
20. A method according to claim 1, wherein
the microwave device comprises a MMIC, a RFIC, a high-frequency circuit, a microwave component or an antenna device.

What is claimed is:

1. A lens array comprising a plurality of condenser lenses arrayed in vertical and horizontal directions so that the condenser lenses and pixels arrayed in a two-dimensional plane have one-to-one correspondence, wherein:
each of the condenser lenses, when viewed from a direction perpendicular to the two-dimensional plane in which the condenser lenses are arrayed, has a planar shape formed with four straight sides and four approximate circular arcs extending between the straight sides, respectively, and a center of the four approximate circular arcs substantially coincides with a center of one of regions corresponding to the pixels.
2. The lens array according to claim 1, wherein:
each of the regions corresponding to the pixels is rectangular in shape; and
a diameter of the approximate circular arcs is shorter than a diagonal of the region while being longer than a short side of the region.
3. The lens array according to claim 1, wherein:
each of the regions corresponding to the pixels is rectangular in shape; and
each of the condenser lenses has a substantially equal curvature in diagonal and side directions in the region.
4. The lens array according to claim 1, wherein:
each of the regions corresponding to the pixels is rectangular in shape; and
a radius of curvature R of each of the condenser lenses satisfies:
X2R({fraction (12)})(X2Y2)(1)
where X and Y represent a length of a short side and a length of a long side of one of the regions, respectively, one of the short and long sides being in the vertical or horizontal direction while the other being in the other direction.
5. A lens array comprising a plurality of condenser lenses arrayed in vertical and horizontal directions so that the condenser lenses and pixels arrayed in a two-dimensional plane have one-to-one correspondence, wherein:
regions corresponding to the pixels, respectively, are rectangular in shape, and a short side of one of the regions is not longer than {fraction (12)} of a long side of the same; and
each of the condenser lenses, when viewed from a direction perpendicular to the two-dimensional plane in which the condenser lenses are arrayed, has a planar shape formed with two straight sides opposing each other substantially in parallel and two approximate circular arcs extending between the straight sides, and a center of the two approximate circular arcs substantially coincides with a center of the one of the regions.
6. The lens array according to claim 1 or 5, wherein side surfaces of each of the condenser lenses that include the straight sides of the planar shape of each of the condenser lenses, respectively, are not perpendicular to the two-dimensional plane in which condenser lenses are arrayed.
7. The lens array according to claim 1 or 5, wherein the regions corresponding to the pixels are rectangular in shape, and a short side of each of the regions is not more than 5 m long.
8. The lens arrays according to claim 1 or 5, wherein the regions corresponding to the pixels are rectangular in shape, and a short side of each of the regions is not more than 3.5 m long.
9. The lens array according to claim 1 or 5, wherein each of the condenser lenses is not more than 2 m high.
10. The lens array according to claim 1 or 5, wherein each of the condenser lenses is not more than 1 m high.
11. The lens array according to claim 1 or 5, wherein each of the condenser lenses is formed in a binary shape obtained by approximation of its shape to a step-like shape.
12. A solid-state imaging element comprising light receiving sections arrayed in a two-dimensional plane and a lens array according to claim 1 or 5 that is laminated on the light receiving sections, wherein the condenser lenses of the lens array and the light receiving sections have one-to-one correspondence.
13. The solid-state imaging element according to claim 12, wherein a focal length of each of the condenser lenses is substantially equal to a distance therefrom to one of the light receiving sections corresponding thereto.
14. A panel display element having pixels arrayed in a two-dimensional plane and a lens array according to claim 1 or 5 that is laminated on the pixels, wherein the condenser lenses of the lens array and the pixels have one-to-one correspondence.
15. The panel display element according to claim 14, wherein a focal length of each of the condenser lenses is substantially equal to a distance therefrom to one of the pixels corresponding thereto.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. A MEMs device comprising:
a MEMs oscillator;
a catalyzing adsorption site supported by the oscillator, such that the sites provide control of chemical surface functionality for the detection of desired analytes.
2. The MEMs device of claim 1 wherein the catalyzing adsorption site comprises a gold anchor.
3. The MEMs device of claim 2 wherein the catalyzing adsorption site comprises provide control of chemical surface functionality for detection of desired analytes.
4. The MEMs device of claim 2 wherein the catalyzing adsorption site further comprises thiolate molecules coupled to the gold anchor.
5. The MEMs device of claim 1 wherein the catalyzing adsorption site comprises a self assembled monolayer.
6. The MEMs device of claim 5 wherein the monolayer comprises a supermolecular hierarchical organization of interlocking components.
7. The MEMs device of claim 6 wherein the monolayer comprises tail group functionalities selected from the group consisting of CH3, OH, COOH, CH\u2550\u2550CH2, C\u2261CH, and CF3.
8. The MEMs device of claim 6 wherein the monolayer is a circular area approximately between 50 and 400 nm in diameter.
9. The MEMs device of claim 1 wherein the oscillator comprises a nanomechanical cantilever beam.
10. The MEMs device of claim 1 wherein the oscillator comprises a dual clamped nanomechanical beam.
11. The MEMs device of claim 1 wherein the oscillator comprises a nanomechanical beam having a paddle shaped portion supporting the catalyzing adsorption site.
12. A device comprising:
a vibrating beam supported by a substrate;
a catalyzing adsorption site supported by the oscillator and positioned on the oscillator to maintain a proper spring constant of the vibrating beam for sensitive mass detection.
13. The device of claim 12 and further comprising a thiolate self-assembled monolayer (SAM) coupled to the adsoption site.
14. The device of claim 12 wherein the frequency of vibration measurably varies in response to attogram masses attached to the SAM.
15. The device of claim 12 wherein the beam is a cantilevered beam having a pad positioned proximate a free end of the cantilevered beam.
16. The device of claim 15 wherein the catalyzing adsorption site is positioned on the pad.
17. The device of claim 12 wherein the beam has a length of less than approximately 20 um.
18. The device of claim 12 wherein the beam is a double clamped beam having a pad positioned approximately halfway between the clamped ends.
19. The device of claim 16 wherein the catalyzing adsorption site is positioned on the pad.
20. A device comprising:
a microelectromechanical polycrystalline silicon beam resonator having a free end with a paddle and a clamped end supported by a substrate;
a catalyzing adsorption site supported by the paddle.
21. The device of claim 20 wherein the paddle is approximately 1 \u03bcm by 1 \u03bcm with a gold pad formed thereon.