1. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
at least two gas injectors connectable through respective respective coupling lines to respective gas sources and configured to inject at least two respective gases into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another.
2. The apparatus of claim 1, wherein said line of continuous wave electromagnetic radiation extends entirely across a width of the substrate.
3. An apparatus for forming a layer on a substrate, comprising
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said state configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate, wherein said line of continuous wave electromagnetic radiation source is at least one laser; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another.
4. The apparatus of claim 3, wherein said continuous wave electromagnetic radiation source is at least one laser diode.
5. The apparatus of claim 1, wherein said continuous wave electromagnetic radiation source has a power between 0.5 kW and 50 kW.
6. The apparatus of claim 1, wherein said continuous wave electromagnetic radiation source has a power of approximately 5 kW.
7. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source, wherein the line of radiation has a power density of between 10 kWcm2 and 200 kWcm2;
a state within said reaction chamber, said state configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another.
8. The apparatus of claim 1, wherein said stage includes a means for securely grasping said substrate.
9. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate, wherein said optics comprise at least one collimator and at least one lens configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into the line of continuous wave electromagnetic radiation at the upper surface of the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another.
10. The apparatus of claim 1, wherein said optics comprise at least one cylindrical lens configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into the line of continuous wave electromagnetic radiation at the upper surface of the substrate.
11. The apparatus of claim 1, wherein said optics are selected from a group consisting of at least one:
cylindrical lens, collimator, optical fiber, waveguide, diffuser, diffractive lens, Fresnel lens, concave lens, convex lens, plane mirror, convex mirror, refractive lens, gradient index lens, and any combination of the aforementioned.
12. The apparatus of claim 1, further comprising a controller to control a speed of said translation mechanism.
13. The apparatus of claim 1, wherein said translation mechanism moves said stage and the line of continuous wave electromagnetic radiation relative to one another at constant speed.
14. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another, wherein said translation mechanism is coupled to said stage.
15. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another, wherein said translation mechanism is coupled to said optics.
16. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said state and the line of continuous wave electromagnetic radiation relative to one another, wherein said translation mechanism is coupled to said optics and said continuous wave electromagnetic radiation source.
17. The apparatus of claim 1, wherein said translation mechanism moves said stage and the line of continuous wave electromagnetic radiation relative to one another in a direction substantially perpendicular to said line of radiation.
18. The apparatus claim 1, wherein said substrate is selected from a group consisting of: a single crystal silicon substrate, silicon on insulator (SOI), Silicon Germanium, alloys of Silicon Germanium, glass, and quartz.
19. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said state configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate, wherein the line of radiation has width of approximately 3 to 500 microns wide.
20. An apparatus for forming a layer on a substrate, comprising:
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism confirmed to translate said stage and the line of continuous wave electromagnetic radiation relative to one another;
wherein said apparatus has a temperature ramp-up rate of larger than 1\xd7106\xb0 C.s.
21. An apparatus for forming a layer on a substrate, comprising;
a reaction chamber;
a gas injector configured to inject at least one gas into said reaction chamber;
a continuous wave electromagnetic radiation source;
a stage within said reaction chamber, said stage configured to receive a substrate thereon;
optics disposed between said continuous wave electromagnetic radiation source and said stage, where said optics are configured to focus continuous wave electromagnetic radiation from said continuous wave electromagnetic radiation source into a line of continuous wave electromagnetic radiation on an upper surface of the substrate, where a length of the line of continuous wave electromagnetic radiation extends at least partially across the substrate; and
a translation mechanism configured to translate said stage and the line of continuous wave electromagnetic radiation relative to one another;
wherein said apparatus has a temperature ramp-down rate of larger than 1\xd7106\xb0 C.s.
22. The apparatus of claim 1, wherein continuous wave electromagnetic radiation from said continuous electromagnetic radiation source has a wavelength between 190 nm and 950 nm.
23. A method for forming a layer on a substrate, comprising:
positioning a substrate into a reaction chamber;
introducing at least one gas into said reaction chamber;
focusing continuous wave electromagnetic radiation into a line of radiation extending at least partially across a surface of the substrate;
translating said line of radiation relative to said surface at a constant predetermined speed, such that a combination of the least one gas and heat generated by the line of radiation causes the least one gas to react and form a layer on the surface of the substrate.
24. The method of claim 23, comprising, prior to said focusing, determining said constant predetermined speed based on factors selected from a group consisting of:
a thermal recipe for processing said substrate, properties of said substrate, a power of said continuous wave electromagnetic radiation, a width of said line of radiation, a power density at said line of radiation, and any combination of the aforementioned.
25. The method of claim 23, comprising, prior to said focusing, emitting said continuous wave electromagnetic radiation from one or more laser diodes.
26. The method of claim 23, comprising, prior to said focusing, emitting said continuous wave electromagnetic radiation, where said continuous wave electromagnetic radiation, where said continuous wave electromagnetic radiation is uniform and coherent radiation having a single wavelength.
27. The method of claim 23, comprising, prior to said focusing emitting said continuous wave electromagnetic radiation, where said continuous wave electromagnetic radiation is not pulsed or flashed.
28. The method of claim 23, comprising, prior to said focusing collimating said continuous wave electromagnetic radiation.
29. The method of claim 23, further comprising repeating said introducing, focusing, and translating to build a layer having a predetermined thickness.
30. The method of claim 23, further comprising controlling a temperature of said continuous wave electromagnetic radiation.
31. The method of claim 23, further comprising controlling an amount of said at least one gas introduced into said reaction chamber.
32. The method of claim 23, further comprising controlling a pressure within said reaction chamber.
33. The method of claim 23, wherein said introducing comprises injecting multiple gases into said reaction chamber.
34. The method of claim 23, further comprising controlling a ratio of said multiple gases introduced into said reaction chamber.
35. The method of claim 23, wherein said layer is deposited on said substrate.
36. The method of claim 23, wherein said line extends entirely across said substrate.
37. A method for depositing a layer on a substrate, comprising positioning a substrate in a reaction chamber and a sequence of steps of:
introducing at least one gas into said reaction chamber;
focusing continuous wave electromagnetic radiation into a line of radiation extending at least partially across a surface of the substrate;
translating said line of radiation relative to said surface at a predetermined speed such that a combination of the at least one gas and heat generated by the line of radiation causes the at least one gas to react and deposit a first layer on the surface of the substrate, said first layer having a thickness of no more than 1 nm.
38. The method of claim 37, further comprising flushing said reaction chamber after said first layer has been deposited.
39. The method of claim 37, comprising a plurality of sequentially performed sequences of said steps to deposit a plurality of said first layers on said substrate.
40. The method of claim 39, wherein each of said sequences further comprises flushing said reaction chamber after said first layer has been deposited.
41. The method of claim 37, wherein said continuous wave electromagnetic radiation is produced by at least one laser.
42. A method for depositing a layer on a substrate, comprising positioning a substrate in a reaction chamber and a plurality of sequentially performed sequences of steps each comprising:
introducing at least one gas into said reaction chamber;
focusing continuous wave electromagnetic radiation into a line of radiation extending across a surface of the substrate; and
translating said line of radiation relative to said surface at a predetermined speed such that a combination of the at least one gas and heat generated by the line of radiation causes the at least one gas to react and deposit a first layer on the surface of the substrate;
wherein said plurality of sequences deposits a plurality of first layers on the surface of the substrate.
43. The method of claim 42, wherein each of said first layers has a thickness of no more than 1 nm.
44. The apparatus of claim 1, wherein at least one of said at least two gases and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
45. The apparatus of claim 3, wherein said line extends entirely across said substrate.
46. The apparatus of claim 3, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
47. The apparatus of claim 7, wherein said line extends entirely across said substrate.
48. The apparatus of claim 7, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
49. The apparatus of claim 9, wherein said line extends entirely across said substrate.
50. The apparatus of claim 9, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
51. The apparatus of claim 14, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
52. The apparatus of claim 14, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
53. The apparatus of claim 15, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
54. The apparatus of claim 15, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
55. The apparatus of claim 16, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
56. The apparatus of claim 16, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
57. The apparatus of claim 19, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
58. The apparatus of claim 14, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
59. The apparatus of claim 20, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
60. The apparatus of claim 20, wherein at least one of said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
61. The apparatus of claim 21, wherein the line of continuous wave electromagnetic radiation extends entirely across the substrate.
62. The apparatus of claim 21, wherein said at least one gas and said continuous wave electromagnetic radiation effect chemical vapor deposition of said layer onto said substrate.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. The use of sunscreen combinations comprising
A) compounds absorbing essentially in the UV-A region and
B) further compounds absorbing in the UV-A region, in the UV-B region and over both regions,
where the constituents (A) absorbing in the UV-A region comprise effective amounts of at least
Aa) one hydroxybenzophenone of the formula I
34
in which
R1 and R2 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl, where the substituents R1 and R2, together with the nitrogen atom to which they are bonded, can form a 5- or 6-membered ring and
R3 is C1-C20-alkyl
and optionally additionally
Ab) 4,4-diarylbutadienes of the formula II
35
in which
R4 and R5 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl,
and as compounds
B) comprise effective amounts of at least one compound chosen from the group consisting of
Ba) dibenzoylmethane compounds of the formula III
36
in which
R6 is C1-C12-alkyl and
R7 is hydrogen, C1-C12-alkyl or C1-C12-alkoxy,
Bb) triazine derivatives of the formula IV
37
in which
R8 to R10 independently of one another are optionally substituted C1-C20-alkyl, C5-C10-aryl, C5-C10-heteroaryl or SpSil, where Sp is a spacer and Sil is a silane, oligosiloxane or polysiloxane radical,
X is the divalent radical
O or
38
where
R11 is hydrogen or optionally substituted C1-C20-alkyl, C5-C10-aryl or C5-C10-heteroaryl,
Bc) triazine derivatives of the formula V
39
in which at least one o-hydroxyl group and at least one p-alkoxy group having 1 to 20 carbon atoms are bonded to the phenyl rings,
Bd) the benzotriazole derivative of the formula VI
40
Be) the benzimidazole derivative of the formula VII
41
and salts
Bf) the benzotriazole derivative of the formula VIII
42
Bg) o,o,p,p-tetrahydroxybenzophenone of the formula IX
43
Bh) an organosiloxane benzalmalonate of the formula Xa
44
in which
V1 is the group
45
V1 is a methyl group or V1, or of the formula Xb
46
in which V2 is the group of the structure
47
V2 is a methyl group or V2,
or mixtures of compounds of the formulae Xa and Xb,
where t is a value up to 100 and u is a value up to 20, with the proviso that u0, when V1V1 andor V2V2, and u is a value from 1 to 20, when V1CH3 andor V2CH3,
as photostable UV filters in cosmetic and pharmaceutical preparations for protecting human skin or human hair against solar rays, optionally together with other compounds which absorb in the UV region and which are known per se for cosmetic and pharmaceutical preparations.
2. The use of sunscreen combinations as claimed in claim 1, which comprise, as essential constituent A), hydroxybenzophenone of the formula I as claimed in claim 1, in which R3 is n-hexyl.
3. The use of sunscreen combinations as claimed in claim 1, which comprise compounds of the formula II in which R4 andor R5 is neopentyl.
4. The use of sunscreen combinations as claimed in claim 1, which comprise, as constituent Bb), triazine derivatives of the formula IV in which the radicals XR8 to XR10 are 2-ethylhexyloxy.
5. The use of sunscreen combinations as claimed in claim 1, which comprise, as constituent Bb), triazine derivatives of the formula IV in which the radical XR8 is t-butylamino and XR9 and XR10 are the radical 2-ethylhexyloxy.
6. The use of sunscreen combinations as claimed in claim 1, which comprise the essential constituent Aa) of the formula I in amounts of at least 5% by weight, based on the sunscreen combination.
7. The use of sunscreen combinations as claimed in claim 1, which comprise additionally to B) pigments in the form of zinc oxide or titanium dioxide.
8. A cosmetic or pharmaceutical preparation comprising sunscreen combinations for the protection of the human epidermis or human hair against UV light in the range from 280 to 400 nm, which comprises, in a cosmetically and pharmaceutically suitable carrier, as photostable UV filters, effective amounts of sunscreen combinations which have
A) compounds absorbing essentially in the UV-A region and
B) further compounds absorbing in the UV-A region, in the UV-B region and over both regions,
where the constituents (A) absorbing in the UV-A region comprise effective amounts of at least
Aa) one hydroxybenzophenone of the formula I
48
in which
R1 and R2 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl, where the substituents R1 and R2, together with the nitrogen atom to which they are bonded, can form a 5- or 6-membered ring and
R3 is C1-C20-alkyl
and optionally additionally
Ab) 4,4-diarylbutadienes of the formula II
49
in which
R4 and R5 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl
and the constituents
B) have an effective amount of at least one compound chosen from the group consisting of
Ba) dibenzoylmethane compounds of the formula III
50
in which
R6 is C1-C12-alkyl and
R7 is hydrogen, C1-C12-alkyl or C1-C12-alkoxy,
Bb) triazine derivatives of the formula IV
51
in which
R8 to R10 independently of one another are optionally substituted C1-C20-alkyl, C5-C10-aryl, C5-C10-heteroaryl or SpSil, where Sp is a spacer and Sil is a silane, oligosiloxane or polysiloxane radical,
X is the divalent radical
0 or
52
where
R11 is hydrogen or optionally substituted C1-C20-alkyl, C5-C10-aryl or C5-C10-heteroaryl,
Bc) triazine derivatives of the formula V
53
in which at least one o-hydroxyl group and at least one p-alkoxy group having 1 to 20 carbon atoms are bonded to the phenyl rings,
Bd) the benzotriazole derivative of the formula VI
54
Be) the benzimidazole derivative of the formula VII
55
and salts
Bf) the benzotriazole derivative of the formula VIII
56
Bg) o,o,p,p-tetrahydroxybenzophenone of the formula IX
57
Bh) an organosiloxane benzalmalonate of the formula Xa
58
in which
V1 is the group
59
V1 is a methyl group or V1, or of the formula Xb
60
in which V2 is the group of the structure
61
V2 is a methyl group of V2
or mixtures of compounds of the formulae Xa and Xb,
where t is a value up to 100 and u is a value up to 20 with the proviso that u0, when V1V1 andor V2V2, and u is a value from 1 to 20, when V1CH3 andor V2CH3,
as photostable UV filters in cosmetic and pharmaceutical preparations for protecting human skin or human hair against solar rays, optionally together with other compounds which absorb in the UV region and which are known per se for cosmetic and pharmaceutical preparations,
optionally together with other compounds which absorb in the UV region and which are known per se for cosmetic and pharmaceutical preparations.
9. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise, as essential constituent A), hydroxybenzophenone of the formula I as claimed in claim 8 in which R3 is n-hexyl.
10. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise compounds of the formula II in which R4 andor R5 is neopentyl.
11. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise, as constituent Bb), triazine derivatives of the formula IV in which the radicals XR8 to XR10 are 2-ethylhexyloxy.
12. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise, as constituent Bb), triazine derivatives of the formula IV in which the radical XR8 is t-butylamino and XR9 and XR10 are the radical 2-ethylhexyloxy.
13. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise the essential constituent Aa) of the formula I in amounts of at least 5% by weight, based on the sunscreen combination.
14. A cosmetic or pharmaceutical preparation comprising sunscreen combinations as claimed in claim 8, wherein the sunscreen combinations comprise additionally to B) pigments in the form of zinc oxide or titanium dioxide.
Use of sunscreen combinations comprising, as essential constituent, amino-substituted hydroxybenzophenones as photostable UV filters in cosmetic and pharmaceutical preparations
Abstract
Use of sunscreen combinations comprising
A) compounds absorbing essentially in the UV-A region and
B) further compounds absorbing in the UV-A region, in the UV-B region and over both regions, where the constituents (A) absorbing in the UV-A region comprise effective amounts of at least
Aa) hydroxybenzophenones of the formula I
62
in which
R1 and R2 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl, where the substituents R1 and R2, together with the nitrogen atom to which they are bonded, can form a 5- or 6-membered ring and
R3 is a C1-C20-alkyl
and optionally
Ab) 4,4-diarylbutadienes of the formula II which also absorb in the UV-A region
63
in which
R4 and R5 independently of one another are hydrogen, C1-C20-alkyl, C3-C10-cycloalkyl or C3-C10-cycloalkenyl,
and as constituents absorbing in the UV-B region
comprise effective amounts of at least one compound chosen from the group consisting of
Ba) dibenzoylmethane compounds of the formula III
64
in which
R6 is C1-C12-alkyl and
R7 is hydrogen, C1-C12-alkyl or C1-C12-alkoxy,
Bb) triazine derivatives of the formula IV
65
in which
R8 to R10 independently of one another are optionally substituted C1-C20-alkyl, C5-C10-aryl, C5-C10-heteroaryl or SpSil, where Sp is a spacer and Sil is a silane, oligosiloxane or polysiloxane radical,
X is the divalent radical
O or
66
where
R11is hydrogen or optionally substituted C1-C20-alkyl, C5-C10-aryl or C5-C10-heteroaryl,
Bc) triazine derivatives of the formula V
67
in which at least one o-hydroxyl group and at least one p-alkoxy group having 1 to 20 carbon atoms are bonded to the phenyl rings,
Bd) the benzotriazole derivative of the formula VI
68
Be) the benzimidazole derivative of the formula VII
69
and salts
Bf) the benzotriazole derivative of the formula VIII
70
Bg) o,o,p,p-tetrahydroxybenzophenone of the formula IX
71
Bh) an organosiloxane benzalmalonate of the formula Xa
72
in which
V1 is the group
73
V1 is a methyl group or V1, or of the formula Xb
74
in which V2 is the group of the structure
75
V2 is a methyl group or V2,
or mixtures of compounds of the formulae Xa and Xb,
where t is a value up to 100 and u is a value up to 20, with the proviso that u0, when V1V1 andor V2V2, and u is a value from 1 to 20, when V1CH3 andor V2CH3, as photostable UV filters in cosmetic and pharmaceutical preparations for protecting human skin or human hair against solar rays, optionally together with other compounds which absorb in the UV region and which are known per se for cosmetic and pharmaceutical preparations.