All The Claims

1. A method of forming electronic devices comprising:
forming a first electrode and a doped oxide layer laterally proximate thereof over a plurality of semiconductor wafers;
providing the plurality of wafers with said first electrodes and doped oxide layers within a hot wall, low pressure chemical vapor deposition reactor;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layers and the first electrodes of individual of the plurality of wafers to a thickness of no greater than 80 Angstroms over at least the first electrodes using feed gases comprising a silicon hydride and ammonia, the chemical vapor depositing comprising injecting the silicon hydride to within the reactor from multiple spaced locations positioned proximate spaced wafers of the plurality;
after the chemical vapor depositing, exposing the wafers with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the respective silicon nitride layers, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable material beneath the doped oxide layers from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode on individual wafers.
2. The method of claim 1 wherein the locations from which the silicon hydride is injected to within the reactor are spaced no further than 1 port per 3 wafers.
3. The method of claim 1 wherein the ammonia is injected to within the reactor at only one location.
4. The method of claim 1 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing.
5. The method of claim 1 further comprising injecting H2 into the reactor during the low pressure chemical vapor deposition, the ammonia being injected to within the reactor from only a single location, the H2 being injected into the reactor from only a single location.
6. The method of claim 1 comprising commencing initial feed of the silicon hydride to the reactor at a temperature of no greater than 600 C.
7. The method of claim 1 comprising rotating the wafers during deposition, and commencing said rotation prior to injecting the silicon hydride to within the reactor.
8. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
forming a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode by low pressure chemical vapor deposition using feed gases comprising a silicon hydride, H2 and ammonia;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
9. The method of claim 8 wherein the H2 is injected to within the reactor as an N2H2 mix.
10. The method of claim 8 comprising commencing initial feed of the silicon hydride to the reactor at a temperature. of no greater than 600 C.
11. The method of claim 8 comprising depositing the silicon nitride to a thickness of no greater than 60 Angstroms.
12. The method of claim 8 comprising rotating the substrate during deposition, and commencing said rotation prior to injecting the H2 to within the reactor.
13. The method of claim 8 comprising rotating the substrate during deposition, and commencing said rotation prior to injecting both the H2 and the silicon hydride to within the reactor.
14. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500 C. to a maximum deposition temperature above 600 C. and starting feed of the silicon hydride into the reactor at a temperature less than or equal to 600 C.;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
15. The method of claim 14 comprising starting feed of the silicon hydride into the reactor at a temperature less than or equal to 550 C.
16. The method of claim 14 comprising starting feed of the silicon hydride into the reactor at a temperature less than or equal to 500 C.
17. The method of claim 14 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing.
18. The method of claim 14 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and starting feed of the ammonia into the reactor at a temperature less than or equal to 600 C.
19. The method of claim 14 comprising starting feed of the ammonia into the reactor at a temperature less than or equal to 600 C.
20. The method of claim 14 comprising starting feed of the ammonia into the reactor at a temperature less than or equal to 600 C., and further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and starting feed of the ammonia into the reactor at a temperature less than or equal to 600 C.
21. The method of claim 20 comprising starting feed of the silicon hydride into the reactor at a temperature less than or equal to 550 C.
22. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500 C. to a maximum deposition temperature above 600 C. using a temperature ramp rate of greater than 10 C.minute from at least 500 C. to at least 600 C.;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
23. The method of claim 22 comprising using a temperature ramp rate of no greater than 100 C.minute from at least 500 C. to at least 600 C.
24. The method of claim 22 comprising using a temperature ramp rate of greater than 10 C.minute from a temperature below 500 C.
25. The method of claim 22 comprising using a temperature ramp rate of greater than 10 C.minute to a temperature above 600 C.
26. The method of claim 22 comprising using a temperature ramp rate of greater than 10 C.minute to the maximum deposition temperature.
27. The method of claim 22 comprising using a temperature ramp rate of greater than 10 C.minute from a temperature below 500 C. to a temperature above 600 C.
28. The method of claim 22 comprising using a temperature ramp. rate of greater than 10 C.minute from a temperature below 500 C. to the maximum deposition temperature.
29. The method of claim 22 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing.
30. The method of claim 22 comprising commencing initial feed of the silicon hydride to the reactor at a temperature of no greater than 600 C.
31. The method of claim 22 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and commencing initial feed of the silicon hydride and the H2 to the reactor at temperatures of no greater than 600 C.
32. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode while the substrate is rotating using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500 C. to a maximum deposition temperature above 600 C. and starting the substrate to rotate prior to reaching the maximum deposition temperature;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
33. The method of claim 32 comprising starting the substrate to rotate prior to reactor temperature reaching 600 C.
34. The method of claim 32 comprising commencing initial feed of the silicon hydride to the reactor at a temperature of no greater than 600 C.
35. The method of claim 32 comprising commencing initial feed of the silicon hydride to the reactor upon starting the substrate rotating.
36. The method of claim 32 comprising starting the substrate to rotate prior to reactor temperature reaching 600 C., and commencing initial feed of the silicon hydride to the reactor upon starting the substrate rotating.
37. The method of claim, 32 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing.
38. The method of claim 32 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and commencing initial feed of the H2 to the reactor at a temperature of no greater than 600 C.
39. The method of claim 32 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and commencing initial feed of the H2 to the reactor upon starting the substrate rotating.
40. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode while the substrate is rotating using feed gases comprising a silicon hydride and ammonia within a reactor, the depositing comprising increasing internal reactor temperature from below 500 C. to a maximum deposition temperature of at least 640 C. and starting the substrate to rotate prior to reaching 640 C.;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
41. The method of claim 40 comprising starting the substrate to rotate prior to reactor temperature reaching 600 C.
42. The method of claim 40 comprising commencing initial feed of the silicon hydride to the reactor at a temperature of no greater than 600 C.
43. The method of claim 40 comprising commencing initial feed of the silicon hydride to the reactor upon starting the substrate rotating.
44. The method of claim 40 comprising starting the substrate to rotate prior to reactor temperature reaching 600 C., and commencing initial feed of the silicon hydride to the reactor upon starting the substrate rotating.
45. The method of claim 40 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing.
46. The method of claim 40 further comprising injecting H2 into the reactor during the low pressure chemical vapor depositing, and commencing initial feed of the H2 to the reactor at a temperature of no greater than 600 C.
47. The method of claim 40 further comprising injecting H9 into the reactor during the low pressure chemical vapor depositing, and commencing initial feed of the H2 to the reactor upon starting the substrate rotating.
48. A method of forming a material over a semiconductive substrate comprising:
chemical vapor depositing a material over a semiconductive substrate within a reactor using at least one reactant gas while the substrate is rotating; and
reducing rotation rate of the substrate upon substantially ceasing flow of the at least one reactant gas to the reactor.
49. The method of claim 48 wherein the chemical vapor depositing comprises low pressure chemical vapor deposition.
50. The method of claim 48 wherein the chemical vapor depositing comprises low pressure chemical vapor deposition void of plasma.
51. The method of claim 48 wherein the rotation rate is reduced by at least 50% of that immediately prior to substantially ceasing flow of the at least one reactant gas to the reactor.
52. The method of claim 48 wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.
53. The method of claim 48 wherein flow of all reactant gases fed to the reactor is ceased at substantially the same time.
54. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;
reducing rotation rate of the substrate upon substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
55. The method of claim 54 wherein the rotation rate is reduced by at least 50% of that immediately prior to substantially ceasing flow of the at least one of the silicon hydride and ammonia to the reactor.
56. The method of claim 54 wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.
57. The method of claim 54 wherein rotation rate is reduced upon substantially ceasing flow of the silicon hydride to the reactor.
58. The method of claim 54 wherein rotation rate is reduced upon substantially ceasing flow of the ammonia to the reactor.
59. The method of claim 54 wherein flow of the silicon hydride and ammonia is ceased at substantially the same time.
60. A method of forming a material over a semiconductive substrate comprising:
chemical vapor depositing a material over a semiconductive substrate within a reactor using at least one reactant gas while the substrate is rotating; and
reducing rotation rate of the substrate within 2 minutes of substantially ceasing flow of the at least one reactant gas to the reactor.
61. The method of claim 60 wherein the reducing occurs within 60 seconds of substantially ceasing flow of the at least one reactant gas to the reactor.
62. The method of claim 60 wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one reactant gas to the reactor.
63. The method of claim 60 wherein the reducing occurs after substantially ceasing flow of the at least one reactant gas to the reactor.
64. The method of claim 60 wherein the reducing occurs before substantially ceasing flow of the at least one reactant gas to the reactor.
65. The method of claim 60 wherein the rotation rate is reduced by at least 50% of that immediately prior to starting said reducing.
66. The method of claim 60 wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.
67. The method of claim 60 wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one reactant gas to the reactor, and the reducing is to some constant lower rate which is maintained for at least 1 minute.
68. The method of claim 60 wherein the reducing occurs after substantially ceasing flow of the at least one reactant gas to the reactor, and the reducing is to some constant lower rate which is maintained for at least 1 minute.
69. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor while the substrate is rotating;
reducing rotation rate of the substrate within 2 minutes of substantially ceasing flow of at least one of the silicon hydride and ammonia to the reactor;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
70. The method of claim 69 wherein the reducing occurs within 60 seconds of substantially ceasing flow of the at least one of the silicon hydride and ammonia to the reactor.
71. The method of claim 69 wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.
72. The method of claim 69 wherein the reducing occurs after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.
73. The method of claim 69 wherein the reducing occurs before substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor.
74. The method of claim 69 wherein the rotation rate is reduced by at least 50% of that immediately prior to starting said reducing.
75. The method of claim 69 wherein said reducing is to some constant lower rate which is maintained for at least 1 minute.
76. The method of claim 69 wherein the reducing occurs commensurate with or after substantially ceasing flow of the at least one of the silicon hydride and the ammonia to the reactor, and the reducing is to some constant lower rate which is maintained for at least 1 minute.
77. A method of forming a material over a semiconductive substrate comprising:
chemical vapor depositing a material over a semiconductive substrate within a reactor using at least one reactant gas; and
flowing an inert cooling gas through the reactor to cool the substrate and deposited material.
78. The method of claim 77 wherein pressure within the reactor during the cooling is greater than 1 atmosphere.
79. The method of claim 77 wherein the chemical vapor depositing is low pressure chemical vapor deposition.
80. The method of claim 77 wherein the chemical vapor depositing is low pressure chemical vapor deposition, and pressure within the reactor during the cooling is greater than 1 atmosphere.
81. A method of forming an electronic device comprising:
providing a first electrode and a doped oxide layer laterally proximate thereof over a substrate;
low pressure chemical vapor depositing a silicon nitride layer over both the doped oxide layer and the first. electrode to a thickness of no greater than 80 Angstroms over at least the first electrode using feed gases comprising a silicon hydride and ammonia within a reactor;
after the depositing, flowing an inert cooling gas through the reactor to cool the substrate and deposited material;
after the cooling, exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a second electrode over the silicon dioxide layer and the first electrode.
82. The method of claim 81 wherein pressure within the reactor during the cooling is greater than 1 atmosphere.
83. A method of forming an electronic device comprising:
providing a doped oxide layer over a substrate;
chemical-mechanical polishing the doped oxide layer; and
after the chemical-mechanical polishing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700 C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700 C. and forming a silicon nitride layer over the doped oxide layer.
84. The method of claim 83 comprising flowing the doped oxide layer prior to the chemical-mechanical polishing at a temperature of at least about 700 C.
85. The method of claim 83 wherein the doped oxide comprises phosphorous doped glass.
86. The method of claim 83 wherein the doped oxide comprises boron doped glass.
87. The method of claim 83 wherein the doped oxide comprises boron and phosphorous doped glass.
88. A method of forming an electronic device comprising:
providing a doped oxide layer over a substrate;
forming an opening into the doped oxide layer;
depositing conductive material to less than completely fill the opening and form over the doped oxide layer proximate the opening;
removing the conductive material formed over the doped oxide layer proximate the opening to isolate the conductive material within the opening;
after the removing, flowing the doped oxide layer in a process comprising at least two steps, a prior in time of the steps comprising an inert atmosphere at a temperature of at least about 700 C., a later in time of the steps comprising an ammonia comprising atmosphere at a temperature of at least about 700 C. and forming a silicon nitride layer at least over the doped oxide layer;
exposing the substrate with silicon nitride layer to oxidizing conditions comprising at least 700 C. to form a silicon dioxide layer over the silicon nitride layer and the conductive material, with the thickness of silicon nitride over the doped oxide layer being sufficient to shield oxidizable substrate material beneath the doped oxide layer from oxidizing during the exposing; and
forming a conductive electrode over the silicon dioxide layer and the conductive material.
89. The method of claim 83 comprising flowing the doped oxide layer prior to the chemical-mechanical polishing at a temperature of at least about 700 C.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. In an image forming apparatus comprising:
a main apparatus body;
a process unit including at least one of an image carrier, a charging unit, a developing device and a toner accommodating unit, the process unit is detachably mounted to the main apparatus body in an insertion direction orthogonal to a width direction of the process unit, which is a vertical direction of the main apparatus body;
a convex section of the process unit that projects from a bottom side of the process unit;
an engagement section of a top side of the main apparatus body that positions the process unit in the width direction by engaging with the convex section if the process unit is mounted to the main apparatus body and the top side of the main apparatus body faces the bottom side of the process unit in the insertion direction; and
a guidance section that guides the convex section towards the engagement section, if the process unit is mounted, the guidance section being on at least one of a tip end of the convex section and the main apparatus body,
wherein the convex section and the engagement section each include a straight section that extends in the insertion direction and contact between the straight section of the convex section and the straight section of the engagement section positions the process unit in the width direction.
2. The image forming apparatus as claimed in claim 1, wherein the guidance section is inclined in the width direction.
3. The image forming apparatus as claimed in claim 1, wherein
the process unit includes an image carrier that is exposed outside of the process unit,
an exposed section of the image carrier is directed downwards toward the bottom side of the process unit,
the process unit includes two or more feet so that the image carrier does not interfere with a placement surface on which the process unit is placed, and
at least one of the feet is the convex section.
4. The image forming apparatus as claimed in claim 1, further comprising:
a plurality of process units that accommodate toners of different colors, wherein
the process units include an interference section whereby interference of the respective process unit and the main apparatus body occurs if an attempt is made to insert the process units in a position other than a prescribed mounting position.
5. An image forming apparatus comprising:
a main apparatus body;
a process unit including at least one of an image carrier, a charging unit, a developing device and a toner accommodating unit, the process unit is detachably mounted to the apparatus main body in an insertion direction orthogonal to a width direction of this process unit, which is a vertical direction of the main apparatus body;
a convex section of the process unit that projects from a bottom side of the process unit;
an engagement section of a top side of the main apparatus body that positions the process unit in the width direction by engaging with the convex section if the process unit is mounted and the top side of the main apparatus body faces the bottom side of the process unit in the insertion direction;
a guidance section that guides the convex section towards the engagement section, if the process unit is mounted, the guidance section being on at least one of a tip end of the convex section and the main apparatus body;
a pair of side plates, that face each other with a gap corresponding to the width direction of the process unit, arranged in the main apparatus body, the process unit being detachably mounted between the pair of side plates;
electrodes that mutually contact arranged in one side face of the process unit and in the side plate corresponding to the one side face; and
a guidance section of the main apparatus body that is inclined to the one side plate side,
wherein the convex section and the engagement section each include a straight section that extends in the insertion direction and contact between the straight section of the convex section and the straight section of the engagement section positions the process unit in the width direction.
6. The image forming apparatus as claimed in claim 5, wherein the guidance section is on the convex section and the guidance section is inclined to the one side plate side.
7. The image forming apparatus as claimed in claim 5, wherein the electrodes are arranged to biased in an inwards direction of the one side plate.
8. The image forming apparatus as claimed in claim 5, wherein
the process unit includes an image carrier that is exposed outside of the process unit,
an exposed section of the image carrier is directed downwards toward the bottom side of the process unit,
the process unit includes two or more feet so that the image carrier does not interfere with a placement surface on which the process unit is placed, and
at least one of the feet is the convex section.
9. The image forming apparatus as claimed in claim 5, further comprising;
a plurality of process units that accommodate toners of different colors, wherein
the process units include an interference section whereby interference of the respective process unit and the main apparatus body occurs if an attempt is made to insert the process units in a position other than a prescribed mounting position.
10. A process unit comprising:
a case that accommodates at least one of an image carrier, a charging unit, a developing device, and a toner accommodating unit, the case is detachably mounted to a main apparatus body of an image forming apparatus in an insertion direction orthogonal to a width direction of the case, which is a vertical direction of the case;
a convex section that projects from a bottom side of the case, wherein
an engagement section of the main apparatus body positions the case in the width direction by engaging with the convex section if the case is mounted,
a guidance section that guides the convex section towards the engagement section if the case is mounted,
the guidance section is on at least one of a tip end of the convex section and the main apparatus body, and
the convex section and the engagement section each include a straight section that extends in the insertion direction and contact between the straight section of the convex section and the straight section of the engagement section positions the case in the width direction.
11. The process unit as claimed in claim 10, wherein the guidance section is inclined in the width direction.
12. The process unit as claimed in claim 10, further comprising:
two or more feet provided such that the image carrier does not interfere with a placement surface if the case is placed on the placement surface with the image carrier exposed from the case in a downwards direction, wherein
at least one of these feet is the convex section.

1. An ink-jet printer, comprising:
a printing head for performing printing on a print medium by ejecting ink from nozzles;
an ink tank for storing the ink to be supplied to the printing head;
an ink passage through which the ink is supplied from the ink tank to the printing head;
a buffer tank which stores the ink supplied through the ink passage; and
an air-discharging device which discharges an air accumulated in the buffer tank through an air-discharge passage and which includes a valve member operable to open and close a communication opening that is provided in the air-discharge passage a part of which functions as a valve chamber, the valve member having (a) a valve portion which opens and closes the communication opening and which includes a sealing member and (b) a rod portion connected to the valve portion,
wherein the air-discharging device further includes air-discharge-flow assuring means for assuring a discharge flow of the air flowing from the buffer tank through the air-discharge passage,
wherein the air-discharge-flow assuring means is realized by a structure that the air-discharging device includes retaining means for retaining the sealing member on the rod portion such that the sealing member is movable together with the rod portion in a direction to open and close the communication opening, and
wherein the sealing member is an annular member inserted on the rod portion, and the valve member includes rotation preventive means provided between the rod portion and the sealing member for preventing the rod portion and the sealing member from rotating relative to each other.
2. The ink-jet printer according to claim 1,
wherein the air-discharging device includes a valve seat surface formed around the communication opening,
and wherein the valve member is slidable within the air-discharge passage, and the sealing member is held in abutting contact with the valve seat surface so as to close the communication opening while the rod portion is moved together with the sealing member in a direction in which the sealing member is separated away from the valve seat surface so as to open the communication opening.
3. The ink-jet printer according to claim 2,
wherein the valve portion of the valve member includes a valve head having a diameter larger than that of the rod portion and the sealing member is in contact with the valve head while being retained by the retaining means,
and wherein the valve head is opposed to the valve seat surface with the sealing member interposed therebetween.
4. The ink-jet printer according to claim 3, wherein the air-discharging device includes a spring member which biases the valve head in a direction in which the sealing member is held in abutting contact with the valve seat surface.
5. The ink-jet printer according to claim 1, wherein the retaining means is constituted by at least one of a concave portion and a convex portion provided on the rod portion for retaining the sealing member thereon.
6. The ink-jet printer according to claim 1, wherein the rotation preventive means is provided by a structure that the rod portion has, at a portion thereof on which the sealing member is inserted, a non-circular shape in cross section.
7. The ink-jet printer according to claim 1, wherein the sealing member is symmetrical in a direction of thickness thereof.
8. An ink-jet printer, comprising:
a printing head for performing printing on a print medium by ejecting ink from nozzles;
an ink tank for storing the ink to be supplied to the printing head;
an ink passage through which the ink is supplied from the ink tank to the printing head;
a buffer tank which stores the ink supplied through the ink passage; and
an air-discharging device which discharges an air accumulated in the buffer tank through an air-discharge passage and which includes a valve member operable to open and close a communication opening that is provided in the air-discharge passage a part of which functions as a valve chamber, the valve member having (a) a valve portion which opens and closes the communication opening and which includes a sealing member and (b) a rod portion connected to the valve portion,
wherein the air-discharging device further includes air-discharge-flow assuring means for assuring a discharge flow of the air flowing from the buffer tank through the air-discharge passage, and
wherein the valve portion further includes a valve head connected to the rod portion and backing the sealing member which is held on the rod portion, and the air-discharge-flow assuring means is realized by a structure that the air-discharging device is configured to have at least one clearance between the rod portion and the sealing member, for permitting passing of the air between the valve head and the sealing member when the valve head and the sealing member are separated away from each other.
9. The ink-jet printer according to claim 8,
wherein the air-discharging device includes a valve seat surface formed around the communication opening,
and wherein the valve member is slidable within the air-discharge passage, and the sealing member is held in abutting contact with the valve head and the valve seat surface so as to close the communication opening while the sealing member is separated away from at least one of the valve head and the valve seat surface so as to open the communication opening.
10. The ink-jet printer according to claim 8, wherein the at least one clearance is constituted by at least one groove which is formed in the rod portion to permit passing of the air therethrough.
11. The ink-jet printer according to claim 10, wherein the rod portion includes: a plurality of protruding portions which are formed on the outer circumferential surface thereof such that the plurality of protruding portions extend in directions away from a center axis of the rod portion and are equiangularly spaced apart from each other in a circumferential direction of the rod portion; and a plurality of grooves as the at least one groove, each of the plurality of grooves being formed between adjacent two of the plurality of protruding portions.
12. The ink-jet printer according to claim 11, wherein the plurality of grooves consist of five grooves each of which extends over an entire axial length of the rod portion.
13. The ink-jet printer according to claim 8,
wherein the air-discharging device includes: the sealing member having an annular shape and inserted on the rod portion; and a spring member which biases the valve member in a sliding direction in which the valve member slides within the air-discharge passage;
wherein the ink-jet printer includes a rod-portion-pushing member which is displaceable in a direction opposite to a direction in which the biasing member biases the valve member,
wherein the valve head is constantly biased by the spring member in a direction in which the sealing member is held in abutting contact with the valve seat surface, and the rod portion is pressed at one end thereof which is not connected to the valve head by the rod-portion-pushing member in a direction against biasing force of the spring member with which the spring member biases the valve head so as to open the communication opening while the rod potion is released from the pressing by the rod-portion-pushing member so as to close the communication opening,
and wherein the rod portion has a diameter smaller than a diameter of the rod-portion-pushing member.
14. An ink-jet printer, comprising:
a printing head for performing printing on a print medium by ejecting ink from nozzles;
an ink tank for storing the ink to be supplied to the printing head;
an ink passage through which the ink is supplied from the ink tank to the printing head;
a buffer tank which stores the ink supplied through the ink passage; and
an air-discharging device which discharges an air accumulated in the buffer tank through an air-discharge passage and which includes a valve member operable to open and close a communication opening that is provided in the air-discharge passage a part of which functions as a valve chamber, the valve member having (a) a valve portion which opens and closes the communication opening and which includes a sealing member and (b) a rod portion connected to the valve portion,
wherein the air-discharging device further includes air-discharge-flow assuring means for assuring a discharge flow of the air flowing from the buffer tank through the air-discharge passage,
wherein the air-discharge passage has an air-inlet through which the air accumulated in the buffer tank is introduced into the valve chamber and an air-outlet from which the air introduced into the valve chamber is flowed out therefrom, one of the air-inlet and the air-outlet being the communication opening,
wherein the air-discharging device further includes a spring member which biases the valve portion in a direction to close the one of the air-inlet and the air-outlet,
and wherein the air-discharge-flow assuring means is realized by a structure that an air-flow path from the air-inlet to the air-outlet is formed radially outwardly of the spring member which is disposed in a radially central portion of the valve chamber.
15. The ink-jet printer according to claim 14, wherein the valve member is slidable within the valve chamber, and the air-discharging device is arranged such that the one of the air-inlet and the air-outlet is opened when the spring member is compressed.
16. The ink-jet printer according to claim 14,
wherein the air-discharging device includes: a valve seat surface formed around the one of the air-inlet and the air-outlet; a supporting protrusion which is formed to be opposed to the one of the air-inlet and the air-outlet and by which the spring member is supported at one end thereof; and a recess formed in the valve portion of the valve member and accommodating another end of the spring member therein,
and wherein the other of the air-inlet and the air-outlet is formed around the supporting protrusion.
17. The ink-jet printer according to claim 16, wherein the one end of the spring member is located between the supporting protrusion and the other of the air-inlet and the air-outlet.
18. The ink-jet printer according to claim 16,
wherein, where projected images of the valve chamber, the valve portion, the other of the air-inlet and the air-outlet, and a spacing corresponding to a part of the air-flow path, which projected images are formed when projected in a sliding direction of the valve member, are respectively referred to as a valve-chamber image, a valve-portion image, an inletoutlet image, and a spacing image, the valve-portion image is located within the valve-chamber image and the spacing image is defined by and between the valve-chamber image and the valve-portion image,
and wherein at least a part of the inletoutlet image overlaps with the spacing image.
19. The ink-jet printer according to claim 18, wherein an overlapping portion of the inlet-outlet image which overlaps with the spacing image has an area larger than that of a non-overlapping portion of the inletoutlet image which does not overlap with the spacing image.
20. The ink-jet printer according to claim 18, wherein an overlapping portion of the spacing image which overlaps with the inletoutlet image has an area larger than that of a non-overlapping portion of the spacing image which does not overlap with the inletoutlet image.
21. The ink-jet printer according to claim 18,
wherein the other of the air-inlet and the air-outlet is provided in a plural number so as to form a plurality of the inletoutlet images,
and wherein the valve-chamber image has a circular outer profile and the plurality of the inletoutlet images are located in concentric relation with the circular outer profile of the valve-chamber image.
22. The ink-jet printer according to claim 14, wherein the valve portion is arranged to close the one of the air-inlet and the air-outlet via the sealing member which is inserted on the rod portion.
23. The ink-jet printer according to claim 14, wherein the valve portion includes on an outer surface thereof a plurality of protrusions which are equiangularly spaced apart from each other in a circumferential direction of the valve portion so as to protrude toward an inner circumferential surface of the valve chamber.
24. The ink-jet printer according to claim 23, wherein the one of the air-inlet and the air-outlet into which the rod portion is inserted has a diameter which is substantially equal to a diameter of the rod portion.
25. An ink-jet printer, comprising:
a printing head for performing printing on a print medium by ejecting ink from nozzles;
an ink tank which stores the ink to be supplied to the printing head;
an ink passage through which the ink is supplied from the ink tank to the printing head;
a buffer tank which stores the ink supplied through the ink passage; and
an air-discharging device which discharges an air accumulated in the buffer tank through an air-discharge passage and which includes a valve member operable to open and close a communication opening provided in the air-discharge passage, the valve member having (a) a valve portion which includes a valve head and a sealing member that is backed by the valve head and which opens and closes the communication opening and (b) a rod portion which is connected at one end thereof to the valve head and on which the sealing member is held,
wherein the air-discharging device is configured to have at least one clearance between the rod portion and the sealing member, for permitting passing of the air between the valve head and the sealing member when the valve head and the sealing member are separated away from each other.
26. An ink-jet printer, comprising:
a printing head for performing printing on a print medium by ejecting ink from nozzles;
an ink tank which stores the ink to be supplied to the printing head;
an ink passage through which the ink is supplied from the ink tank to the printing head;
a buffer tank which stores the ink supplied through the ink passage; and
an air-discharging device that discharges an air accumulated in the buffer tank through an air-discharge passage a part of which functions as a valve chamber, the air-discharging device including:
a valve chamber having an air-inlet through which the air accumulated in the buffer tank is introduced into the valve chamber and an air-outlet through which the air introduced into the valve chamber is flowed out therefrom;
a valve member operable to open and close one of the air-inlet and the air-outlet and having (a) a valve portion which opens and closes the one of the air-inlet and the air-outlet and (b) a rod portion connected to the valve portion; and
a spring member which biases the valve portion in a direction to close the one of the air-inlet and the air-outlet,

wherein an air-flow path from the air-inlet to the air-outlet is formed radially outwardly of the spring member which is disposed in a radially central portion of the valve chamber.

The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.

1. Naphthotriazole derivatives represented by the following general formula (1),
wherein,
Ar1 is an aromatic hydrocarbon group or an aromatic heterocyclic group,
R1 to R5 may be the same or different, and are hydrogen atoms, deuterium atoms, fluorine atoms, chlorine atoms, cyano groups, alkyl groups having 1 to 6 carbon atoms, aromatic hydrocarbon groups or aromatic heterocyclic groups,
A is a monovalent group represented by the following structural formula (1a),
wherein,
m is an integer of 0, 1 or 2,
Ar2 is an aromatic heterocyclic group,
R6 to R9 may be the same or different, and are hydrogen atoms, deuterium atoms, fluorine atoms, chlorine atoms, cyano groups, alkyl groups having 1 to 6 carbon atoms, aromatic hydrocarbon groups or aromatic heterocyclic groups,
X is a carbon atom or a nitrogen atom, and
wherein if X is a nitrogen atom, R9 is not present on the ring that includes the nitrogen atoms, if m is 0, Ar2 is directly bonded to the nitrogen atom in the triazole ring and if m is 2, the plurality of R6 to R9 and X may be the same or different from each other.
2. Naphthotriazole derivatives according to claim 1, wherein the group Ar1 in said general formula (1) is bonded to the fourth position of a naphthalene ring in a naphthotriazole ring.
3. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), m is 0 in the structural formula (1a).
4. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), m is 1 in the structural formula (1a).
5. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), m is 2 in the structural formula (1a).
6. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), A is a monovalent group represented by any one of the following structural formula (A-1), (A-2) or (A-3),
wherein R6 to R9 and Ar2 are as defined in said structural formula (1a).
7. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), Ar2 is a pyridyl group in the structural formula (1a).
8. Naphthotriazole derivatives according to claim 1, wherein in said general formula (1), A is a monovalent group represented by any one of the following structural formula (A-4), (A-5), (A-6) or (A-7),
9. An organic electroluminescent device having a pair of electrodes and at least one organic layer interposed therebetween, wherein naphthotriazole derivatives of claim 1 are used as materials for constituting at least one organic layer.
10. The organic electroluminescent device according to claim 9, wherein said organic layer is an electron-transporting layer.
11. The organic electroluminescent device according to claim 9, wherein said organic layer is a hole-blocking layer.
12. The organic electroluminescent device according to claim 9, wherein said organic layer is a luminous layer.
13. The organic electroluminescent device according to claim 9, wherein said organic layer is an electron injection layer.