1. A film laminate, comprising:
a) a weathering-stable support laminate comprising, from outside to inside, a PMMA protective layer, a first adhesive layer and a support film;
b) a second adhesive layer; and
c) a barrier laminate comprising at least three inorganic oxide layers which improve the barrier effect to water vapour and oxygen.
2. The film laminate according to claim 1, wherein the first adhesive layer is an ethylene-acrylate hotmelt and the support film is a polyester film or polyolefin film.
3. The film laminate according to claim 1, wherein:
the support film has a thickness of between 100 and 400 \u03bcm;
the first adhesive layer has a thickness of between 20 and 80 \u03bcm; and
the PMMA protective layer has a thickness of between 50 and 400 \u03bcm.
4. The film laminate according to claim 1, wherein the PMMA protective layer has a scratch-resistant coating.
5. The film laminate according to claim 1, wherein the barrier laminate comprises at least three polymer films, at least three inorganic oxide layers and at least two adhesive layers comprising a third adhesive layer, a fourth adhesive layer, or both.
6. The film laminate according to claim 5, wherein the polymer films are polyester films or polyolefin films having a thickness of between 5 and 50 \u03bcm.
7. The film laminate according to claim 1, wherein:
the inorganic oxide layers are SiOx layers having an x value of between 1.3 and 1.7;
the inorganic oxide layers each have a thickness of between 10 and 100 nm.
8. The film laminate according to claim 1, wherein:
the inorganic oxide layers are AlOx layers having an x value of between 1.2 and 1.5;
the inorganic oxide layers each have a thickness of between 10 and 100 nm.
9. The film laminate according to claim 1, wherein the barrier laminate has the construction:
PET-SiOx-third adhesive layer-SiOx-PET-fourth adhesive layer-PET-SiOx-third adhesive layer-SiOx-PET;
PET-SiOx-third adhesive layer-SiOx-PET-fourth adhesive layer-PET-SiOx-third adhesive layer-SiOx-PET-fourth adhesive layer-PET-SiOx-third adhesive layer-SiOx-PET; or
PET-SiOx-third adhesive layer-SiOx-PET-SiOx-third adhesive layer-SiOx-PET.
10. The film laminate according to claim 1, wherein:
the film laminate comprises, from outside to inside, the weathering-stable support laminate, the second adhesive layer, the barrier laminate, and a third adhesive layer applied on the bottom side of the barrier laminate.
11. The film laminate according to claim 1, having a partial discharge voltage of at least 1000 V and a transparency of more than 80% in the range of more than 300 nm.
12. A process for producing the film liminate according to claim 1, the process comprising:
a) inorganically coating a polymer film by vacuum evaporation or sputtering, said polymer film being joined by an adhesive layer to at least two further inorganically coated films, and combining a resulting barrier laminate with the weathering-resistant support film by laminating, extrusion laminating or by extrusion coating, wherein the first adhesive layer is an ethylene-acrylate hotmelt and the support film is a polyester film or polyolefin film; or
b) inorganically coating a polymer film on both sides by vacuum evaporation or sputtering, said polymer film being joined by an adhesive layer to at least one further inorganically coated film, and combining a resulting barrier laminate with the weathering-resistant support film according by laminating, extrusion laminating or by extrusion coating, wherein the first adhesive layer is an ethylene-acrylate hotmelt and the support film is a polyester film or polyolefin film; or
c) inorganically coating a polymer film by vacuum evaporation or sputtering on both sides, said polymer film being joined by an adhesive layer to at least one further double-sidedly inorganically coated film, and combining a resulting film assembly with the weathering-resistant support film by extrusion coating, wherein the first adhesive layer is an ethylene-acrylate hotmelt and the support film is a polyester film or polyolefin film,
wherein:
in the physical vacuum evaporation of a) to c), silicon oxide or aluminium oxide is evaporated by an electron beam; or
in the physical vacuum evaporation of a) to c), silicon oxide or aluminium oxide is evaporated thermally.
13. An article, comprising the film laminate according to claim 1 which is suitable for the packaging industry, in display technology, and for organic LEDs.
14. An article, comprising the film laminate according to claim 1, said article selected from the group consisting of an organic photovoltaic, a thin-film photovoltaic, and a crystalline silicon module.
15. The film laminate according to claim 2, wherein:
the support film has a thickness of between 100 and 400 \u03bcm;
the first adhesive layer has a thickness of between 20 and 80 \u03bcm; and
the PMMA protective layer has a thickness of between 50 and 400 \u03bcm.
16. The film laminate according to claim 2, wherein the PMMA protective layer has a scratch-resistant coating.
17. The film laminate according to claim 2, wherein:
the inorganic oxide layers are SiOx layers having an x value of between 1.3 and 1.7;
the inorganic oxide layers each have a thickness of between 10 and 100 nm.
18. The film laminate according to claim 2, wherein:
the inorganic oxide layers are AlOx layers having an x value of between 1.2 and 1.5;
the inorganic oxide layers each have a thickness of between 10 and 100 nm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of forming patterns of a semiconductor device, the method comprising:
providing a semiconductor substrate defining etch auxiliary patterns formed over a target etch layer;
forming an auxiliary layer over the semiconductor substrate and the etch auxiliary patterns;
forming first auxiliary patterns within first parts of the auxiliary layer coming into contact with the etch auxiliary patterns by denaturing the first parts of the auxiliary layer;
forming a second auxiliary pattern within a second part of the auxiliary layer coming into contact with the etch auxiliary patterns by denaturing the second part of the auxiliary layer, wherein the second auxiliary pattern comes into contact with top surfaces of the first auxiliary patterns so that the non-denatured auxiliary layer remains between the etch auxiliary patterns; and,
removing the first and second auxiliary patterns to form etch mask patterns comprising the etch auxiliary patterns and the non-denatured auxiliary layer.
2. The method of claim 1, wherein forming of the second auxiliary pattern comprises:
forming a material film over the auxiliary layer, wherein The material film is the same as the etch auxiliary patterns; and,
denaturing the second part of the auxiliary layer that contacts the material film.
3. The method of claim 2, wherein the first and second auxiliary patterns are formed in such a manner that hydrogen ions (H+) are diffused from the etch auxiliary patterns or the material film.
4. The method of claim 2, wherein the first and second auxiliary patterns are removed simultaneously with the material film.
5. The method of claim 2, wherein the material film is formed of a photoresist film.
6. The method of claim 5, wherein the first and second auxiliary patterns are removed simultaneously in a development process for the photoresist film.
7. The method of claim 5, wherein the second auxiliary pattern is formed by performing an exposure process on the photoresist film.
8. The method of claim 1, wherein:
the etch auxiliary patterns comprise fat-soluble materials, and
the auxiliary layer comprises water-soluble materials.
9. The method of claim 8, further comprising, after forming the auxiliary layer, performing a baking process at a temperature higher than a glass transition temperature of the etch auxiliary patterns and the auxiliary layer.
10. The method of claim 1, wherein the first auxiliary patterns are formed by an annealing process.
11. The method of claim 1, wherein a gap between the etch auxiliary patterns is three times greater than a width of each of the etch auxiliary patterns.
12. The method of claim 1, wherein a thickness of the first auxiliary pattern is identical to that of etch auxiliary pattern.
13. A method of forming patterns of a semiconductor device, the method comprising:
forming a target etch layer and etch auxiliary patterns over a semiconductor substrate defining first and second regions, the etch auxiliary patterns having a pitch or each has a width greater in the second region than in the first region;
forming an auxiliary layer over the semiconductor substrate and the etch auxiliary patterns;
forming first auxiliary patterns within first parts of the auxiliary layer coming into contact with the etch auxiliary patterns by denaturing the first parts of the auxiliary layer;
forming a second auxiliary pattern within a second part of the auxiliary layer coming into contact with the first auxiliary patterns by denaturing the second part of a the auxiliary layer, wherein the second auxiliary pattern comes into contact with top surface of the first auxiliary patterns so that the non-denatured auxiliary layer remains between the etch auxiliary patterns; and,
removing the first and second auxiliary patterns to form etch mask patterns comprising the etch auxiliary patterns and the non-denatured auxiliary layer.
14. The method of claim 13, wherein the forming of the second auxiliary pattern comprises:
forming a material film over the auxiliary layer, wherein the material film is the same as the etch auxiliary patterns;
performing an exposure process using a reticle that includes a first transmission unit, a second transmission unit and a light shielding unit so that the material film is divided into a non-exposure region corresponding to the light shielding unit, a first exposure region corresponding to the first transmission unit and a second exposure region corresponding to the second transmission unit; and,
denaturing the second part of the auxiliary layer that contacts the first and second exposure regions of the material film.
15. The method of claim 14, wherein the first and second auxiliary patterns are formed in such a manner that hydrogen ions (H+) are diffused from the etch auxiliary patterns or the first and second exposure regions of the material film.
16. The method of claim 14, wherein the material film is formed of a photoresist film.
17. The method of claim 16, wherein the first and second auxiliary patterns are removed simultaneously in a development process for the photoresist film.
18. The method of claim 14, wherein the non-exposure region is formed in a boundary between the first and second regions, the first exposure region is formed in the first region and a second exposure region is formed in the second region.
19. The method of claim 18, wherein the second auxiliary pattern is formed in an entire region other than a boundary between the first and second regions.
20. The method of claim 18, wherein transmittances of the first and second transmission units are set differently.
21. The method of claim 18, wherein the first transmission unit transmits light less than the second transmission unit so that an amount of hydrogen ions (H+) generated within the second exposure region is greater than an amount generated within the first exposure region.
22. The method of claim 14, wherein the height of the non-denatured auxiliary layer in the first region diminishes with an increasing transmittance of light in the first transmission unit.
23. The method of claim 14, wherein the first and second exposure regions are removed simultaneously with the first and second auxiliary patterns.
24. The method of claim 14, wherein removing the first and second auxiliary patterns is performed to remain the non-exposure region of the material layer.
25. The method of claim 13, wherein:
the etch auxiliary patterns comprise fat-soluble materials, and
the auxiliary layer comprises water-soluble materials.
26. The method of claim 25, further comprising, after forming the auxiliary layer, performing a baking process at a temperature higher than a glass transition temperature of the etch auxiliary patterns and the auxiliary layer.
27. The method of claim 13, wherein the auxiliary layer is formed to fully fill spaces between the etch auxiliary patterns in the first region and along a surface of the etch auxiliary patterns in the second region.
28. The method of claim 13, wherein the first auxiliary patterns are formed by an annealing process.
29. The method of claim 13, wherein a gap between the etch auxiliary patterns formed in the first region is three times greater than a width of each of the etch auxiliary patterns formed in the first region.
30. The method of claim 13, wherein a thickness of the first auxiliary pattern is identical to that of the etch auxiliary pattern formed in the first region.