1. A semiconductor device comprising:
a substrate including a first portion having a <110> crystalline orientation and a second portion having a <100> crystalline orientation;
a pnp hetero-junction bipolar transistor (HBT) disposed on the first portion of the substrate, the pnp HBT including:
a collector disposed on the first portion of the substrate;
a base disposed on the collector to form a hetero-junction therebetween; and
an emitter disposed on the base to form a hetero-junction therebetween; and
an npn hetero-junction bipolar transistor (HBT) disposed on the second portion of the substrate, the npn HBT including:
a collector disposed on the second portion of the substrate;
a base disposed on the collector to form a hetero-junction therebetween; and
an emitter disposed on the base to form a hetero-junction therebetween.
2. The semiconductor device of claim 1, wherein the first portion of the substrate is a handle wafer and the second portion of the substrate is disposed on the handle wafer, and wherein the second portion of the substrate includes a silicon-on-insulator (SOI) region.
3. The semiconductor device of claim 2, wherein the npn HBT is disposed over the SOI region of the second portion of the substrate.
4. The semiconductor device of claim 2, wherein the SOI region is disposed on a buried oxide (BOX), the BOX disposed on the first portion of the substrate.
5. A hetero-junction bipolar transistor (HBT) comprising:
a substrate of hybrid crystalline orientation,
wherein the substrate includes at least one region of <110> crystalline orientation and at least one region of <100> crystalline orientation;
at least one hetero-junction bipolar structure disposed on the substrate, the at least one hetero-junction bipolar structure being a pnp structure disposed on the at least one region of <110> crystalline orientation and including an emitter, a base and a collector,
wherein the emitter is disposed on the base to form a hetero-junction therebetween,
wherein the base is disposed on the collector to form a hetero-junction therebetween, and
wherein the collector is disposed on the substrate.
6. The transistor of claim 5, wherein the substrate further comprises a region including a combination of the <100> crystalline orientation and the <110> crystalline orientation.
7. The transistor of claim 6, wherein the at least one hetero-junction bipolar structure further includes a second hetero-junction bipolar structure being an npn structure disposed on the at least one region of <100> crystalline orientation.
8. The transistor of claim 5, wherein the at least one region of <100> crystalline orientation is incorporated in a silicon-on-insulator (SOI) region of the substrate.
9. The transistor of claim 5, wherein the at least one region of <100> crystalline orientation is a handle wafer and the at least one region of <110> crystalline orientation is disposed on the handle wafer.
10. The transistor of claim 5, wherein the at least one region of <110> crystalline orientation is a handle wafer and the at least one region of <100> crystalline orientation is disposed on the handle wafer.
11. The transistor of claim 5, wherein the substrate includes at least one of a shallow-trench-isolation (STI) region and a deep trench.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A pharmaceutical composition adapted for nasal administration comprising (i) an oil-in-water emulsion and (ii) a drug dissolved in the emulsion, wherein the oil phase comprises a hydroxylated oil and wherein the drug is for systemic delivery and is also an analgesic agent, a drug for the treatment of Parkinson’s disease, a drug for the treatment of impotence or a non-steroidal anti-inflammatory drug (NSAID), other than a cannabinoid.
2. A composition adapted for nasal administration comprising (i) an oil-in-water emulsion and (ii) a drug dissolved in the emulsion, wherein the oil phase comprises a hydroxylated oil and wherein the drug is for systemic delivery and is also an analgesic agent, a drug for the treatment of Parkinson’s disease, a drug for the treatment of impotence or a non-steroidal anti-inflammatory drug (NSAID), other than a cannabinoid, for use in medicine.
3. A composition according to claim 1, wherein the hydroxylated oil is a hydroxylated vegetable oil.
4. A composition according to claim 3, wherein the hydroxylated vegetable oil is castor oil.
5. A composition according to claim 1, wherein the NSAID is flurbiprofen.
6. A composition according to claim 1, wherein the NSAID is ibuprofen.
7. A composition according to claim 1, wherein the NSAID is a COX-1 or COX-2 inhibitor.
8. A composition according to claim 1, wherein more than 50% of the drug is dissolved in the oil phase on a weight basis.
9. A composition according to claim 8, wherein more than 75% of the drug is dissolved in the oil phase on a weight basis.
10. A method for the treatment of pain which comprises delivering an oil-in-water emulsion containing a systemically active drug other than a cannabinoid by the nasal route.
11. A method according to claim 1 0, wherein the drug is a NSAID.
12. The use of a composition according to claim 1, for the systemic delivery of a drug by the nasal route.
13. The use of a composition according to claim 1, in the manufacture of a medicament for nasal administration.
14. The use of a composition according to claim 1, in the manufacture of a medicament for systemic delivery of the drug by the nasal route.