What is claimed is:
1. An apparatus for manufacturing semiconductor grains by discharging out a semiconductor molten solution through a nozzle hole of a crucible to allow the same to fall dropwise, the crucible including a cylindrical body member and a disk-shaped nozzle member disposed at the bottom portion of the cylindrical body member, the nozzle member being provided with the nozzle hole for discharging the semiconductor molten solution dropwise therefrom.
2. An apparatus for manufacturing semiconductor grains as claimed in claim 1, in which the cylindrical body member is formed of an outer wall member and an inner wall member disposed inside the outer wall member, and a small-diametered portion is provided at the bottom of the outer wall member, the nozzle member being mounted on the small-diametered portion in such a manner that the inner wall member presses and fixes the nozzle member.
3. An apparatus for manufacturing semiconductor grains as claimed in claim 1, in which the diameter of the nozzle hole is not less than 5 m and not more than 100 m.
4. An apparatus for manufacturing semiconductor grains as claimed in claim 1, in which a plurality of nozzle holes are provided in the nozzle member.
5. An apparatus for manufacturing semiconductor grains as claimed in claim 1, in which the nozzle member is formed of any one selected from the group consisting of silicon carbide, aluminum oxide, boron nitride, silicon oxide and diamond.
6. A method for manufacturing semiconductor grains comprising steps of filling a semiconductor molten solution into a crucible having a cylindrical body member and a disk-shaped nozzle member fitted to the bottom portion of the body member, applying a pressure to the semiconductor molten solution in the crucible, discharging out dropwise the semiconductor molten solution through a nozzle hole provided in the nozzle member, allowing the semiconductor molten solution to fall to cool and solidify the semiconductor molten solution during falling.
7. A method for manufacturing semiconductor grains as claimed in claim 6, in which the pressure not less than 0.01 MPa and not more than 0.7 MPa is applied to the semiconductor molten solution in the crucible to discharge out dropwise the semiconductor molten solution through the nozzle hole.
8. A method for manufacturing semiconductor grains as claimed in claim 6, in which a semiconductor material is melted in the crucible to form the semiconductor molten solution.
9. A method for manufacturing semiconductor grains as claimed in claim 6, in which the semiconductor material is silicon.
10. A method for manufacturing semiconductor grains comprising steps of adding grains acting as cores of crystal to a semiconductor material, filling a semiconductor molten material of the semiconductor material into a crucible, discharging out the semiconductor molten solution dropwise through a nozzle hole provided in the crucible to allow the semiconductor molten material to fall, and cooling and solidifying the molten material during falling.
11. A method for manufacturing semiconductor grains as claimed in claim 10, in which the grains acting as cores of crystal are formed of one or two selected from the group consisting of silicon carbide, aluminum oxide, silicon oxide, diamond and graphite.
12. A method for manufacturing semiconductor grains as claimed in claim 10, in which a pressure is applied to the semiconductor molten solution in the crucible to discharge out dropwise the semiconductor molten solution through the nozzle hole.
13. A method for manufacturing semiconductor grains as claimed in claim 10, in which the semiconductor material is silicon.
14. A semiconductor grains manufactured by the method for manufacturing semiconductor grains as claimed in claim 10, containing grains formed of one or two selected from the group consisting of silicon carbide, aluminum oxide, silicon oxide, diamond and graphite.
15. In an apparatus for manufacturing semiconductor grains by discharging out a semiconductor molten solution through a nozzle hole of a crucible to allow the same to fall dropwise,
an apparatus for manufacturing semiconductor grains in which a surface layer of silicon carbide is formed on the inner wall surface of the crucible.
16. In an apparatus for manufacturing semiconductor grains by discharging out a semiconductor molten solution through a nozzle hole of a crucible to allow the same to fall dropwise,
an apparatus for manufacturing semiconductor grains in which the crucible is formed of sintered graphite, and formed on the inner wall surface of the crucible is an amorphous carbon layer.
17. Semiconductor grains manufactured by the method for manufacturing semiconductor grains as claimed in claim 15, the carbon content of each of which is not more than 50 ppm.
18. Semiconductor grains manufactured by the method for manufacturing semiconductor grains as claimed in claim 16, the carbon content of each of the semiconductor grains is not more than 50 ppm.
19. A photoelectric converting device manufactured with the use of semiconductor grains as claimed in claim 17.
20. A photoelectric converting device manufactured with the use of semiconductor grains as claimed in claim 18.
21. A method for manufacturing semiconductor grains comprising steps of feeding a semiconductor molten material into a crucible, discharging out dropwise the semiconductor molten solution through a nozzle hole provided in the crucible to allow the semiconductor molten material to fall in an atmosphere containing oxygen, and cooling and solidifying the molten material during falling to form semiconductor grains.
22. A method for manufacturing semiconductor grains as claimed in claim 21, in which the resultant semiconductor grains are heat-treated to make single crystal semiconductor grains.
23. A method for manufacturing semiconductor grains as claimed in claim 21, in which the semiconductor is silicon.
24. A method for manufacturing semiconductor grains as claimed in claim 21, in which the oxygen concentration of the resultant semiconductor grains is less than 21018 atomscm3.
25. A method for manufacturing semiconductor grains as claimed in claim 21, in which the atmosphere containing oxygen is argon containing oxygen or helium containing oxygen.
26. A method for manufacturing semiconductor grains as claimed in claim 21, in which the oxygen concentration of the atmosphere is not less than 0.05 atom % and not more than 50 atom %.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A system for creating a vertical water flow in a water column that includes a first portion and a second, deeper portion, the system comprising:
a down-welling mechanism positioned in the water column, wherein said down-welling mechanism is configured to create the vertical water flow downward to the second, deeper portion of the water column.
2. The system of claim 1, wherein said down-welling mechanism being driven in response to oscillation of the water column.
3. The system of claim 2, wherein the first portion of the water column includes a surface and wherein said down-welling mechanism being driven in response to oscillation of the water surface.
4. The system of claim 1, wherein the down-welling mechanism is a pumping device including:
a funnel including a first open end having a first diameter and a second open end having a second diameter; and
a discharge line arranged in fluid communication with said second open end, said discharge line including a discharge outlet.
5. The system according to claim 4, wherein said discharge line is coupled to said funnel with a connector.
6. The system according to claim 4, wherein said discharge line is integrally formed with said funnel.
7. The system according to claim 4, wherein said discharge outlet includes at least one opening formed adjacent an end of said discharge line.
8. The system according to claim 4, wherein the pumping device is configured to limit backflow toward said funnel.
9. The system according to claim 8, wherein said discharge outlet is configured such that water is expelled from said discharge line at an angle relative to a vertical axis defined by said discharge line.
10. The system according to claim 4, wherein a decrease in diameter of said funnel extending between said first open end and said second open end accelerates water through said funnel into said discharge line.
11. The system according to claim 1, further comprising:
a floating device coupled to a portion of said down-welling mechanism, said floating device being configured to support said down-welling mechanism within a body of water.
12. The system according to claim 1, further comprising:
a weight coupled to a portion of said down-welling mechanism, said weight being configured to maintain a generally vertical orientation of said down-welling mechanism.
13. The system according to claim 1, further comprising:
a stationary structure to which said down-welling mechanism is attached.
14. The system according to claim 1, wherein said down-welling mechanism is submerged within the water column.
15. A method for moving water from a first portion of a water column to a second, deeper portion of the water column, comprising:
oscillating a down-welling mechanism positioned in the water column to create a vertical water flow downward to the second, deeper portion of the water column.
16. The method according to claim 15, wherein said oscillating of said down-welling mechanism is configured to accelerate a flow rate of water within said down-welling mechanism.
17. The method according to claim 15, wherein the down-welling mechanism is a pumping device including:
a funnel including a first open end having a first diameter and a second open end having a second diameter; and
a discharge line arranged in fluid communication with said second open end, said discharge line including a discharge outlet.
18. The method according to claim 15, wherein the down-welling mechanism is submerged within the water column.
19. The method according to claim 15, wherein the down-welling mechanism is configured to limit backflow toward said funnel.
20. The method according to claim 15, wherein said discharge outlet is configured such that water is expelled from said discharge line at an angle relative to a vertical axis defined by said discharge line.