What is claimed is:
1. An optical data storage medium to store contents, comprising:
formatted information for the contents; and
manufacturer information comprising identification information of a recording apparatus that generated or modified the contents and order information concerning modification of the contents.
2. The storage medium of claim 1, wherein the identification information comprises a manufacturer’s specific information code of the recording apparatus.
3. The storage medium of claim 1, wherein the order information comprises information on a last modification of the contents.
4. The storage medium of claim 1, wherein the order information is a sequential order in which the contents were modified by the recording apparatus.
5. The storage medium of claim 1, wherein the identification information comprises at least two or more pieces of information on the recording apparatus.
6. The storage medium of claim 1, wherein the identification information is recorded in a specified area of the recording medium for the formatted information and identifies a last modification of the contents.
7. The storage medium of claim 1, wherein the identification information is recorded in a specified sequence to identify an order in which the contents were modified.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method for manufacturing a semiconductor substrate, comprising:
irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;
forming an insulating layer over the single crystal semiconductor substrate;
bonding the insulating layer and the supporting substrate to each other;
separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;
forming a first semiconductor layer over the first single crystal semiconductor layer;
forming a second semiconductor layer over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; and
improving crystallinity of the first semiconductor layer and the second semiconductor layer by a solid-phase growth to form a second single crystal semiconductor layer.
2. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are formed so that the crystallinity of the first semiconductor layer is higher than that of the second semiconductor layer.
3. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are formed so that hydrogen concentration of the first semiconductor layer is lower than that of the second semiconductor layer.
4. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer is formed to have a thickness of from 10 nm to 50 nm inclusive, and the second semiconductor layer is formed to have a thickness of 300 nm or more.
5. The method for manufacturing a semiconductor substrate according to claim 1, wherein ions generated from a source gas containing hydrogen are used as the ions.
6. The method for manufacturing a semiconductor substrate according to claim 1, wherein the first semiconductor layer is formed by a plasma CVD in which a flow rate of a hydrogen gas is 50 times or more as high as that of the silane based gas.
7. The method for manufacturing a semiconductor substrate according to claim 1, wherein the method further comprises forming a layer including a conductive material or a semiconductor layer including an impurity element over the single crystal semiconductor substrate before the step of forming the insulating layer over the single crystal semiconductor substrate.
8. A method for manufacturing a semiconductor substrate, comprising:
irradiating a single crystal semiconductor substrate with ions to form a damaged region in the single crystal semiconductor substrate;
forming an insulating layer over a supporting substrate;
bonding the single crystal semiconductor substrate and the insulating layer to each other;
separating the single crystal semiconductor substrate at the damaged region to form a first single crystal semiconductor layer over the supporting substrate;
forming a first semiconductor layer over the first single crystal semiconductor layer;
forming a second semiconductor layer over the first semiconductor layer with a different condition from that used for forming the first semiconductor layer; and
improving crystallinity of the first semiconductor layer and the second semiconductor layer by a solid-phase growth method to form a second single crystal semiconductor layer.
9. The method for manufacturing a semiconductor substrate according to claim 8, wherein the first semiconductor layer and the second semiconductor layer are formed so that the crystallinity of the first semiconductor layer is higher than that of the second semiconductor layer.
10. The method for manufacturing a semiconductor substrate according to claim 8, wherein the first semiconductor layer and the second semiconductor layer are formed so that hydrogen concentration of the first semiconductor layer is lower than that of the second semiconductor layer.
11. The method for manufacturing a semiconductor substrate according to claim 8, wherein the first semiconductor layer is formed to have a thickness of from 10 nm to 50 nm inclusive, and the second semiconductor layer is formed to have a thickness of 300 nm or more.
12. The method for manufacturing a semiconductor substrate according to claim 8, wherein ions generated from a source gas containing hydrogen are used as the ions.
13. The method for manufacturing a semiconductor substrate according to claim 8, wherein the first semiconductor layer is formed by a plasma CVD in which a flow rate of a hydrogen gas is 50 times or more as high as that of the silane based gas.
14. The method for manufacturing a semiconductor substrate according to claim 8, wherein the method further comprises forming a layer including a conductive material or a semiconductor layer including an impurity element over the single crystal semiconductor substrate before the step of forming the insulating layer over the supporting substrate or the step of bonding the single crystal semiconductor substrate and the insulating layer to each other.