1. A semiconductor device, comprising:
a semiconductor substrate;
a lower structure formed on the semiconductor substrate;
a first insulation film formed on the lower structure;
a first metal layer coupled to the lower structure through a first metal contact in the first insulation film;
a second metal layer formed on the first metal layer; and
first inside dummy metal layers formed inside a pad region on the second metal layer.
2. The semiconductor device of claim 1, wherein the first inside dummy metal layers are formed in the shape of a mesh or a plurality of concentric squares.
3. The semiconductor device of claim 1, further comprising a plurality of inside dummy gates formed inside the pad region in the shape of a plurality of concentric squares or a plurality of islands.
4. The semiconductor device of claim 3, wherein the inside dummy gates do not overlap with the first inside dummy metal layers.
5. The semiconductor device of claim 3, wherein the inside dummy gates are separated by 0.5 \u03bcm to 3.0 \u03bcm when overlapping with the first inside dummy metal layers.
6. The semiconductor device of claim 1, further comprising an outside dummy gate for surrounding the pad region at a predetermined interval from the pad region outside the pad region.
7. The semiconductor device of claim 6, further comprising a first dummy metal contact formed in a line shape on the outside dummy gate outside the pad region.
8. The semiconductor device of claim 1, wherein a width of the first inside dummy metal layers ranges from 0.2 \u03bcm to 1.0 \u03bcm.
9. The semiconductor device of claim 1, wherein an interval between the first inside dummy metal layers ranges from 2.0 \u03bcm to 5.0 \u03bcm.
10. The semiconductor device of claim 1, wherein the edges of the first inside dummy metal layers are aligned in the vertical direction to the edges of the pad region.
11. The semiconductor device of claim 1, wherein the first inside dummy metal layers are inwardly formed at an interval of 0.5 \u03bcm to 2.0 \u03bcm from the edges of the second metal layer.
12. The semiconductor device of claim 7, further comprising a first outside dummy metal layer for surrounding the pad region in a line shape outside the pad region, and a second dummy metal contact formed on the first outside dummy metal layer.
13. The semiconductor device of claim 12, wherein a width of the first outside dummy metal layer ranges from 0.5 \u03bcm to 1.0 \u03bcm.
14. The semiconductor device of claim 12, wherein a width of the second dummy metal contact ranges from 0.20 \u03bcm to 0.50 \u03bcm.
15. The semiconductor device of claim 12, further comprising a second dummy metal layer formed on the second dummy metal contact, wherein an interval between the second dummy metal layer and the second metal layer ranges from 3.0 \u03bcm to 10.0 \u03bcm.
16. The semiconductor device of claim 15, wherein a width of the second dummy metal layer ranges from 0.5 \u03bcm to 1.0 \u03bcm.
17. The semiconductor device of claim 12, wherein a horizontal interval between the first dummy metal contact and the second dummy metal contact ranges from 1.0 \u03bcm to 5.0 \u03bcm.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A backlight module, comprising:
a housing having at least one first locating portion;
a flat light source disposed on the housing;
a diffuser positioned over the flat light source; and
a spacer disposed between the housing and the diffuser to maintain a distance therebetween and comprising a supporting portion to support the diffuser and a base connected to the supporting portion, extending through the flat light source and fixed on the housing;
wherein the supporting portion has a reflective layer thereon to reflect the light from the flat light source and a first supporting element contacting the diffuser and extending in a first direction parallel to the diffuser.
2. The backlight module as claimed in claim 1, wherein the base comprises a latching element engaging the housing and a connecting portion connecting the supporting portion and the latching element.
3. The backlight module as claimed in claim 1, wherein the first supporting element further has a contacting portion contacting the diffuser and at least one lateral surface inclined toward the diffuser at a predetermined angle; and the reflecting layer is formed on the lateral surface.
4. The backlight module as claimed in claim 3, wherein the first supporting element has two lateral surfaces conjugated at an angle of 20\xb0 to 60\xb0.
5. The backlight module as claimed in claim 3, wherein the supporting portion further has a second supporting element having the same structure as the first supporting element but extending in a second direction parallel to the diffuser and different from the first direction.
6. The backlight module as claimed in claim 2, wherein the first locating portion comprises a locating hole receiving the connecting portion.
7. The backlight module as claimed in claim 2, wherein the first locating portion comprises a locating groove receiving the connecting portion.
8. The backlight module as claimed in claim 2, wherein the flat light source is a flat light.
9. The backlight module as claimed in claim 8, wherein the flat light source has at least one second locating portion corresponding to the first locating portion.
10. The backlight module as claimed in claim 9, wherein the supporting portion has a first supporting element contacting the diffuser and extending in a first direction parallel to the diffuser.
11. The backlight module as claimed in claim 10, wherein the first supporting element further has a contacting portion contacting the diffuser and at least one lateral surface inclined toward the diffuser at a predetermined angle; and the reflecting layer is formed on the lateral surface.
12. The backlight module as claimed in claim 11, wherein the first supporting element has two lateral surfaces conjugated at an angle of 20\xb0 to 60\xb0.
13. The backlight module as claimed in claim 11, wherein the supporting portion further has a second supporting element having the same structure as the first supporting element but extending in a second direction parallel to the diffuser and different from the first direction.
14. The backlight module as claimed in claim 9 or 10, wherein the first locating portion comprises a first locating hole receiving the connecting portion.
15. The backlight module as claimed in claim 14, wherein the second locating portion comprises a second locating hole aligned with the first locating hole receiving the connecting portion.
16. The backlight module as claimed in claim 10, wherein the first locating portion comprises a first locating groove receiving the connecting portion.
17. The backlight module as claimed in claim 16, wherein the second locating portion comprises a second locating groove aligned with the first locating groove receiving the connecting portion.