1. A capacitive device, comprising:
a first conductive layer formed over a substrate;
a first SrO unit film formed directly on the first conductive layer, wherein the first conductive layer is subjected to between 50 and 200 pre-saturation pulses of a Sr-precursor without a pulse of an oxidant between the pre-saturation pulses;
a first plurality of SrO unit films formed directly on the first SrO unit film;
a first plurality of TiO2 unit films formed directly on the first plurality of SrO unit films;
a second plurality of SrO unit films formed directly on the first plurality of TiO2 unit films;
a second plurality of TiO2 unit films formed directly on the second plurality of SrO unit films;
a second conductive layer formed directly on the second plurality of TiO2 films.
2. The capacitive device of claim 1, wherein a ratio of a number of SrO units to TiO2 units is 4:3.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A semiconductor device comprising:
a substrate having a surface made of a semiconductor having a hexagonal single-crystal structure of polytype 4H, said surface of said substrate being constructed by alternately providing a first plane having a plane orientation of (0-33-8) and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
a gate insulating film provided on said surface of said substrate; and
a gate electrode provided on said gate insulating film.
2. The semiconductor device according to claim 1, wherein said second plane has a plane orientation of (0-11-1).
3. The semiconductor device according to claim 1, wherein said semiconductor is silicon carbide.
4. A semiconductor device comprising:
a substrate having a surface made of a semiconductor having a single-crystal structure other than a cubic structure, said single-crystal structure cyclically including an equivalent structure to the cubic structure, said surface of said substrate being constructed by alternately providing a first plane having a plane orientation of (001) in said equivalent structure, and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
a gate insulating film provided on said surface of said substrate; and
a gate electrode provided on said gate insulating film.
5. The semiconductor device according to claim 4, wherein said single-crystal structure has one of a hexagonal structure and a rhombohedral structure.
6. A method for manufacturing a semiconductor device, comprising the steps of:
preparing a substrate having a surface made of silicon carbide having a hexagonal single-crystal structure of polytype 4H;
chemically treating said surface of said substrate so as to alternately form, in said surface of said substrate, a first plane having a plane orientation of (0-33-8) and a second plane connected to said first plane and having a plane orientation different from said plane orientation of said first plane;
forming a gate insulating film on said surface of said substrate; and
forming a gate electrode on said gate insulating film.
7. The method for manufacturing the semiconductor device according to claim 6, wherein said second plane has a plane orientation of (0-11-1).
8. The method for manufacturing the semiconductor device according to claim 6, wherein the step of chemically treating said surface includes the step of chemically etching said surface.
9. The method for manufacturing the semiconductor device according to claim 8, wherein the step of chemically etching said surface includes the step of thermally etching said surface.
10. The method for manufacturing the semiconductor device according to claim 9, wherein the step of thermally etching said surface includes the step of heating said substrate in an atmosphere including at least one or more types of halogen atom.
11. The method for manufacturing the semiconductor device according to claim 10, wherein said at least one or more types of halogen atom includes at least one of chlorine atom and fluorine atom.