1. A clutch linkage for a variable speed transmission comprising:
a control shaft pivotable about an axis of the control shaft;
two arms connected to the control shaft, each of the arms being pivotable with the control shaft about the axis between a first position and a second position in response to pivoting of the control shaft;
a cross-bar connecting the two arms;
a projection positioned on each of the arms between the control shaft and the cross-bar, each projection being configured for exerting a force on a movable sleeve when the two arms are moved between the first position and the second position, the movable sleeve being movable between a disengaged position away from a clutch element and an engaged position against the clutch element; and
at least one shoulder on the two arms, the at least one shoulder being configured to move into contact with and exert a force on the clutch element when the two arms are moved between the first position and the second position.
2. A clutch linkage for a variable speed transmission comprising:
a control shaft pivotable about an axis of the control shaft;
a substantially U-shaped arm connected at two points to the control shaft, the substantially U-shaped arm comprising a first pivotable arm connected to the control shaft at a first end of the first pivotable arm, a second pivotable arm connected to the control shaft at a first end of the second pivotable arm, and a cross-bar extending between the first pivotable arm and the second pivotable arm whereby the first and second pivotable arms are integrally connected and moveable, the substantially U-shaped arm being pivotable with the control shaft about the axis between a first position and a second position in response to pivoting of the control shaft; and
a plurality of projections positioned on the substantially U-shaped arm between the control shaft and the cross-bar, the plurality of projections being configured for exerting a force on a movable sleeve when the substantially U-shaped arm is moved between the first position and the second position, the movable sleeve being movable between a disengaged position away from a clutch element and an engaged position against the clutch element;
wherein the substantially U-shaped arm comprises at least one shoulder, the at least one shoulder being configured to move into contact with and exert a force on the clutch element when the substantially U-shaped arm is moved between the first position and the second position.
3. The clutch linkage of claim 2, wherein the cross-bar is connected to and extends from the first pivotable arm at a second end of the first pivotable arm opposite the first end of the first pivotable arm connected to the control shaft; and
wherein the cross-bar is connected to and extends from the second pivotable arm at a second end of the second pivotable arm opposite the first end of the second pivotable arm connected to the control shaft.
4. The clutch linkage of claim 3, wherein the cross-bar is substantially U-shaped.
5. The clutch linkage of claim 2, wherein the plurality of projections comprises a first projection extending from an interior-facing surface of the first pivotable arm and a second projection extending from an interior-facing surface of the second pivotable arm.
6. The clutch linkage of claim 5, wherein the second projection is positioned substantially diametrically opposite to the first projection.
7. The clutch linkage of claim 5, wherein the first pivotable arm has a curved shape such that a position at which the cross-bar is connected to the first pivotable arm is offset such that it is non-collinear relative to a position at which first end of the first pivotable arm is connected to the control shaft and a position from which the first projection extends; and
wherein the second pivotable arm has a curved shape such that a position at which the cross-bar is connected to the second pivotable arm is offset such that it is non-collinear relative to a position at which first end of the second pivotable arm is connected to the control shaft and a position from which the second projection extends.
8. The clutch linkage of claim 2, wherein each of the plurality of projections comprises a substantially cylindrical protrusion.
9. A clutch release device for a variable speed transmission comprising:
a sleeve movable between a disengaged position away from a clutch element and an engaged position against the clutch element;
a control shaft pivotable about an axis of the control shaft;
a substantially U-shaped arm positioned about the sleeve and connected at two points to the control shaft, the substantially U-shaped arm comprising a first pivotable arm connected at a first end of the first pivotable arm to the control shaft, a second pivotable arm connected at a first end of the second pivotable arm to the control shaft, a cross-bar extending between the first pivotable arm and the second pivotable arm, and at least one shoulder facing the clutch element; and
a plurality of projections positioned on the substantially U-shaped arm between the control shaft and the cross-bar, the projections linking the substantially U-shaped arm to the sleeve;
wherein rotation of the control shaft about the axis pivots the substantially U-shaped arm about the axis between a first position and a second position, which in turn moves the sleeve between the disengaged position and the engaged position; and
wherein when the control shaft is rotated about the axis to move the substantially U-shaped arm between a first position and a second position, the at least one shoulder is moved into contact with and exerts a force on the clutch element.
10. The clutch release device of claim 9, wherein the sleeve comprises a recess into which the plurality of projections is received.
11. The clutch release device of claim 10, wherein the recess comprises a circumferential groove.
12. The clutch release device of claim 9, wherein the cross-bar is connected to the first pivotable arm at a second end of the first pivotable arm opposite the first end of the first pivotable arm connected to the control shaft; and
wherein the cross-bar is connected to the second pivotable arm at a second end of the second pivotable arm opposite the first end of the second pivotable arm connected to the control shaft.
13. The clutch release device of claim 12, wherein the cross-bar is substantially U-shaped.
14. The clutch release device of claim 9, wherein the plurality of projections comprises a first projection and a second projection positioned on the substantially U-shaped arm such that they engage the sleeve at substantially diametrically opposite positions on the sleeve.
15. The clutch release device of claim 14, wherein the first pivotable arm has a curved shape such that a position at which the cross-bar is connected to the first pivotable arm is offset such that it is non-collinear relative to a position at which first end of the first pivotable arm is connected to the control shaft and a position from which the first projection extends; and
wherein the second pivotable arm has a curved shape such that a position at which the cross-bar is connected to the second pivotable arm is offset such that it is non-collinear relative to a position at which first end of the second pivotable arm is connected to the control shaft and a position from which the second projection extends.
16. The clutch release device of claim 9, wherein each of the plurality of projections comprises a substantially cylindrical protrusion.
17. The clutch release device of claim 9, wherein the movable sleeve comprises a clutch bearing.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A nonvolatile semiconductor memory device, comprising:
a semiconductor substrate including a memory cell region and a peripheral circuit region, the memory cell region including a plurality of first semiconductor active regions and a plurality of first isolation regions which isolate between the first active regions, each first isolation region extending toward a first direction, the peripheral circuit region including a second semiconductor active region and a second isolation region which isolates the second active region;
a plurality of control gates, each control gate formed over the first active region and the first isolation region and extending toward a second direction intersecting to the first direction, respectively;
a first insulating film formed on the first and a second active regions;
a plurality of floating gates, each floating gate formed between the control gate and the first insulating film;
a second insulating film formed between the floating gate and the control gate; and
a peripheral gate formed on the first insulating film in the peripheral circuit region, including a first electrode portion formed on the first insulating film, a second electrode portion formed on the first electrode portion and a third insulating film located between the first and the second electrode portions;
wherein
a first upper surface of the first isolation regions facing to the control gate protrudes from a second upper surface of the first insulating film, a height of the first upper surface is lower than a height of a third upper surface of the floating gate, a fourth upper surface of the first isolation regions between the control gates is the same as a height of the second upper surface, and a fifth upper surface of the second isolation region protrude from the second upper surface, and a height of the fifth upper surface is lower than a height of a sixth upper surface of the first electrode.
2. The nonvolatile semiconductor memory device according to claim 1, wherein the height of the third upper surface of the floating gate is the same as the height of the sixth upper surface of the first electrode of the peripheral gate.
3. The nonvolatile semiconductor memory device according to claim 1, wherein the third insulating film is separated so as to electrically connecting the first and the second electrode portions.
4. A nonvolatile semiconductor memory device, comprising:
a semiconductor substrate including a memory cell region and a peripheral circuit region, the memory cell region including a plurality of first semiconductor active regions and a plurality of first isolation regions which isolate between the first active regions, each first isolation region extending toward a first direction, the peripheral circuit region including a second semiconductor active region and a second isolation region which isolates the second active region;
a plurality of control gates, each control gate formed over the first active region and the first isolation region and extending toward a second direction intersecting to the first direction, respectively;
a plurality of floating gates, each floating gate formed between the control gate and the first active region;
a first insulating film formed between the floating gate and the first active region;
a second insulating film formed between the floating gate and the control gate;
a peripheral gate formed in the peripheral circuit region, including a first electrode portion formed on a third insulating film formed on the second active region, a second electrode portion formed on the first electrode portion and a fourth insulating film located between the first and the second electrode portions;
wherein
a first upper surface of the first isolation regions facing to the control gate protrudes from a second upper surface of the semiconductor substrate, a height of the first upper surface is lower than a height of a third upper surface of the floating gate, a fourth upper surface of the first isolation regions between the control gates is the same as a height of the second upper surface, and a fifth upper surface of the second isolation region protrude from the second upper surface, and a height of the fifth upper surface is lower than a height of a sixth upper surface of the first electrode.
5. The nonvolatile semiconductor memory device according to claim 4, wherein the height of the third upper surface of the floating gate is the same as the height of the sixth upper surface of the first electrode of the peripheral gate.
6. The nonvolatile semiconductor memory device according to claim 4, wherein the fourth insulating film is separated so as to electrically connecting the first and the second electrode portions.