1. A method for forming an image sensor device, comprising:
forming an alignment mark overlying or in a substrate, wherein distance from the alignment mark to the substrate edge is less than about 3 mm;
forming an array of active photosensing pixels overlying the substrate;
forming at least one dielectric layer overlying the substrate, covering the array;
forming a color filter photoresist overlying the at least one dielectric layer;
removing the color filter photoresist over the alignment mark; and
exposing the color filter photoresist aligned with the alignment mark.
2. The method according to claim 1, further comprising forming microlenses on the color filter corresponding to the array.
3. The method according to claim 1, further comprising:
forming a light shield layer over the color filter photoresist;
removing the light shield layer over the alignment mark; and
patterning the light shield layer to cover a periphery area of the image sensor device.
4. The method according to claim 3, wherein the light shield layer comprises black photoresist.
5. The method according to claim 1, wherein removal of the color filter photoresist from the alignment mark, comprises the steps of:
placing the substrate on a platform and spinning at a predetermined rotational speed; and
injecting a chemical solution on to the color filter photoresist at an edge of the substrate.
6. The method according to claim 1, wherein removing the color filter photoresist over the alignment mark, comprises the steps of:
placing the substrate on a supporting means of a rotating chuck;
emitting light to expose the color filter photoresist over the edge of the substrate; and
developing the color filter photoresist.
7. The method according to claim 1, further comprising developing the color filter photoresist.
8. A method for forming an image sensor device, comprising:
forming an alignment mark overlying or in a substrate, wherein distance from the alignment mark to the substrate edge is less than about 3 mm;
coating a photoresist with low transmittance at wavelength of 550\u02dc650 nm overlying the substrate;
removing the photoresist at the substrate edge; and
using an exposure apparatus to expose the photoresist with alignment to the alignment mark.
9. The method according to claim 8, further comprising:
forming a light shield layer over the photoresist;
removing the light shield layer over the alignment mark; and
patterning the light shield layer to cover a periphery area of the image sensor device.
10. The method according to claim 8, wherein the light shield layer comprises black photoresist.
11. The method according to claim 8, wherein removing the photoresist at the substrate edge comprises the steps of:
placing the substrate on a platform and spinning at a predetermined rotational speed; and
injecting a chemical solution on the photoresist at edge of the substrate.
12. The method according to claim 8, wherein removing the photoresist at the substrate edge comprises the steps of:
placing the substrate on a supporting means of a rotating chuck;
emitting light to expose the photoresist over the edge of the substrate; and
developing the photoresist.
13. The method according to claim 8, wherein the photoresist comprises a color filter photoresist.
14. The method according to claim 13, further comprising, prior to coating the photoresist:
forming an array of active photosensing pixels on the substrate;
forming at least one dielectric layer on the substrate, covering the array.
15. An image sensing devices, comprising:
a wafer comprising a plurality of image sensing devices;
an alignment mark overlying or in the wafer, wherein distance from the alignment mark to the wafer edge is less than about 3 mm;
wherein the image sensing devices comprise a color filter photoresist covering the wafer without covering the alignment-mark.
16. The image sensing devices according to claim 15, wherein each image sensing device comprises:
an array of active photosensing pixels disposed on the wafer;
at least one dielectric layer disposed on the wafer covering the array;
the color filter photoresist on the least one dielectric layer; and
a microlens on the color filter photoresist.
17. The image sensing devices according to claim 15, wherein the color filter photoresist exposes the edge of the wafer.
18. The image sensing devices according to claim 15, further comprising a light shield layer disposed over the color filter photoresist to cover a periphery area of each image sensing device, wherein the light shield layer exposes the alignment mark.
19. The image sensing devices according to claim 18, wherein the light shield layer comprises black photoresist.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
We claim:
1. A method for treating HIV infection in a subject comprising administering to said subject an anti-HIV effective amount of a compound of formula I.
7
wherein:
n is 0 to 6;
R is an electron donating group; and
R1 is cyclo(C3-C12) alkyl, cyclo(C3-C12) alkenyl, isothiazolyl, tetrazolyl, triazolyl, pyridyl, imidazolyl, phenyl, napthyl, benzoxazolyl, benzimidazolyl, thiazolyl, oxazolyl, benzothiazolyl, pyrazinyl, pyridazinyl, thiadiazolyl, benzotriazolyl, pyrolyl, indolyl, benzothienyl, thienyl, benzofuryl, quinolyl, isoquinolyl, or pyrazolyl.
2. The method of claim 1, wherein R1 is substituted with H, methyl, methoxy, or halo.
3. The method of claim 1, wherein n is 1.
4. The method of claim 1, wherein R is methyl or methoxy.
5. The method of claim 1, wherein R1 is pyridyl.
6. The method of claim 1, wherein R1 is 5-bromo-pyridyl.
7. The method of claim 1, wherein R is para-methyl.
8. The method of claim 1, wherein R is para-methoxy.
9. A method for inhibiting replication of HIV comprising contacting said HIV with an inhibitory amount of a compound of formula 1:
8
wherein:
n is 0 to 6;
R is an electron donating group; and
R1 is cyclo(C3-C12) alkyl, cyclo(C3-C12) alkenyl, isothiazolyl, tetrazolyl, triazolyl, pyridyl, imidazolyl, phenyl, napthyl, benzoxazolyl, benzimidazolyl, thiazolyl, oxazolyl, benzothiazolyl, pyrazinyl, pyridazinyl, thiadiazolyl, benzotriazolyl, pyrolyl, indolyl, benzothienyl, thienyl, benzofuryl, quinolyl, isoquinolyl, or pyrazoly.
10. The method of claim 9, wherein R1 is substituted with H, methyl, methoxy, or halo.
11. A method for inhibiting HIV reverse transcriptase comprising contacting said HIV an effective inhibitory amount of a compound of formula I:
9
wherein:
n is 0 to 6;
R is an electron donating group; and
R1 is cyclo(C3-C12) alkyl, cyclo(C3-C12) alkenyl, isothiazolyl, tetrazolyl, triazolyl, pyridyl, imidazolyl, phenyl, napthyl, benzoxazolyl, benzimidazolyl, thiazolyl, oxazolyl, benzothiazolyl, pyrazinyl, pyridazinyl, thiadiazolyl, benzotriazolyl, pyrolyl, indolyl, benzothienyl, thienyl, benzofuryl, quinolyl, isoquinolyl, or pyrazolyl.
12. The method of claim 11, wherein R1 is substituted with H, methyl, methoxy, or halo.
13. The method of any of claims 1, 8, or 9, wherein the compound is:
2-(4-methoxyphenethyl)-N-2-(5-bromopyridyl)thiourea (HI-23 8); or
N-2-(4-methylphenethyl)-N-2-(5-bromopyridyl)thiourea (HI-244).
14. A compound comprising the structure of formula I:
10
wherein:
n is 0 to 6;
R is an electron donating group; and
R1 is cyclo(C3-C12) alkyl, cyclo(C3-C12) alkenyl, isothiazolyl, tetrazolyl, triazolyl, pyridyl, imidazolyl, phenyl, napthyl, benzoxazolyl, benzimidazolyl, thiazolyl, oxazolyl, benzothiazolyl, pyrazinyl, pyridazinyl, thiadiazolyl, benzotriazolyl, pyrolyl, indolyl, benzothienyl, thienyl, benzofuryl, quinolyl, isoquinolyl, or pyrazolyl.
15. The compound of claim 14, wherein R1 is substituted with H, methyl, methoxy, or halo.
16. The compound of claim 14, wherein n is 1, R is methyl or methoxy, and R1 is pyridyl.