1. A grip garment for assisting a user in carrying an item, said garment comprising:
an article of clothing adapted to be worn on the torso of the user and at least partially covering a user’s shoulders, said article comprising a flexible material having an inside surface and outside surface, said article having a left side, a right side, a back side and a front side, the right side and left side being generally parallel to the sagittal plane of a torso, at least one lateral grip area, a serratus anterior area and an external oblique area located on the right side and left side of said article, wherein said lateral grip area has an overall length that extends from the serratus anterior area to the external oblique area and said lateral grip area extends from said front side to said back side; and
a. friction material applied to said lateral grip area to form a frictional surface extending above said outside surface of said article, said frictional surface adapted to be in contact with an item carried under the arm of a user to resist the relative motion of the item with respect to said grip area.
2. The grip garment of claim 1, wherein said article is selected from the group consisting of a vest, a short sleeve shirt, and a long sleeve shirt.
3. The grip garment of claim 1, wherein said article has a frictional surface on a right lateral grip area and a left lateral grip area.
4. The grip garment of claim 1, further comprising a reinforcing material, operatively attached to said flexible material, said reinforcing material covering said lateral grip area and extending around at least one of the user’s shoulders to distribute a load to the shoulder and resist deformation of said flexible material.
5. The grip garment of claim 1, further comprising a support belt fixedly attached to a lower torso area of said article, said belt including a relatively wide back portion and two relatively narrow straps extending from first and second ends of said back portion, said belt having fastening means for coupling said straps at distal ends.
6. The grip garment of claim 1, wherein said grip area has frictional material applied in a spaced pattern.
7. The grip garment of claim 6, wherein said frictional material is applied in a polka of pattern.
8. A grip garment for assisting a user in carrying an item, said garment comprising:
a vest comprising a flexible material having an inside surface and outside surface, said vest having a left side, a right side, a back side and a front side, the sides being generally parallel to the sagittal plane of a torso, a right lateral grip area located on the right side and a left lateral grip area located on the left side, a right serratus anterior area located on the right side and a left serratus anterior area located on the left side, a right external oblique area located on the right side and a left external oblique area located on the left side, wherein each of said lateral grip areas have an overall length that extends from the serratus anterior area to the external oblique area and said lateral grip area extends from said front side to said back side; and
a friction material applied to each of said lateral grip areas to form a frictional surface extending above said outside surface of said vest, said frictional surface being in contact with an item carried under the arm of a user to resist the relative motion of the item.
9. The grip garment of claim 8, further comprising selectively detachable right and left arm sections.
10. The grip garment of claim 9, wherein said right arm section has a right brachial grip area and said left arm section has a left brachial grip area, said arm sections have friction material applied to said right brachial grip area and said left brachial grip area to form right and left brachial frictional surfaces for further resisting the relative motion of the item.
11. The grip garment of claim 8, wherein said vest has a friction material applied to an anterior grip area to form an anterior frictional surface; said anterior frictional surface being in contact with an item held against the ventral portion of the torso of a user to resist the relative motion of the item.
12. The grip garment of claim 8, further comprising a support belt fixedly attached to a lower torso area of said vest, said belt including a relatively wide back portion and two relatively narrow straps extending from first and second ends of the back portion, said belt having fastening means for coupling said straps at distal ends.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method comprising:
forming a tunnel oxide layer on a substrate;
depositing via atomic layer deposition a first layer of silicon nitride over said tunnel oxide layer, said first layer of silicon nitride comprises a first silicon richness; and
depositing via atomic layer deposition a second layer of silicon nitride over said first layer of silicon nitride, said second layer of silicon nitride comprises a second silicon richness that is different than said first silicon richness.
2. The method of claim 1, wherein said second silicon richness is less than said first silicon richness.
3. The method of claim 1, wherein said second silicon richness is greater than said first silicon richness.
4. The method of claim 1, wherein said first layer of silicon nitride comprises a stoichiometric silicon nitride film.
5. The method of claim 4, wherein said second layer of silicon nitride comprises a stoichiometric silicon nitride film.
6. The method of claim 1, wherein said second layer of silicon nitride comprises a stoichiometric silicon nitride film.
7. The method of claim 1, wherein said first layer of silicon nitride and said second layer of silicon nitride are part of a non-volatile memory.
8. The method of claim 1, wherein said substrate comprises silicon.
9. An integrated circuit memory device comprising:
a substrate;
a tunnel oxide layer disposed over said substrate;
a first layer of silicon nitride disposed over said tunnel oxide layer via atomic layer deposition, said first layer of silicon nitride comprises a first silicon richness; and
a second layer of silicon nitride disposed over said first layer of silicon nitride via atomic layer deposition, said second layer of silicon nitride comprises a second silicon richness that is different than said first silicon richness.
10. The integrated circuit memory device of claim 9, wherein said second silicon richness is less than said first silicon richness.
11. The integrated circuit memory device of claim 9, wherein said second silicon richness is greater than said first silicon richness.
12. The integrated circuit memory device of claim 9, wherein said substrate comprises silicon.
13. The integrated circuit memory device of claim 9, further comprising:
a third layer of silicon nitride disposed over said second layer of silicon nitride via atomic layer deposition, said third layer of silicon nitride comprises a third silicon richness that is different than said second silicon richness.
14. The integrated circuit memory device of claim 13, wherein said third silicon richness is less than said second silicon richness.
15. The integrated circuit memory device of claim 13, wherein said third silicon richness is greater than said second silicon richness.
16. The integrated circuit memory device of claim 13, wherein said third layer of silicon nitride comprises a stoichiometric silicon nitride film.
17. A method comprising:
forming a tunnel oxide layer on a silicon substrate;
depositing via atomic layer deposition a first layer of silicon nitride over said tunnel oxide layer, said first layer of silicon nitride comprising a first silicon richness; and
depositing via atomic layer deposition a second layer of silicon nitride over said first layer of silicon nitride, said second layer of silicon nitride comprising a second silicon richness that is less than said first silicon richness.
18. The method of claim 17, further comprising:
depositing via atomic layer deposition a third layer of silicon nitride over said second layer of silicon nitride, said third layer of silicon nitride comprising a third silicon richness that is less than said second silicon richness.
19. The method of claim 18, wherein said third layer of silicon nitride comprises a stoichiometric silicon nitride film.
20. The method of claim 17, wherein said first layer of silicon nitride and said second layer of silicon nitride are part of an integrated circuit non-volatile memory.