1. A method for fabricating a semiconductor device, the method comprising:
forming a device isolation structure in a semiconductor substrate to define an active region;
forming a bulb type recess on the semiconductor substrate within the active region;
forming a gate insulating film over the semiconductor substrate and on a surface of the bulb type recess;
forming a first polysilicon layer over the gate insulating film;
forming a silicon-on-dielectric (\u201cSOD\u201d) barrier film over the first polysilicon layer at a lower part of the bulb type recess;
forming a second polysilicon layer over the semiconductor substrate and filling the bulb type recess;
injecting impurity ions into the second polysilicon layer;
performing an annealing process on the semiconductor substrate; and
forming and patterning a metal layer and a gate hard mask layer on the second polysilicon layer to form a gate including a stacked structure having a gate hard mask pattern, the metal layer, the second polysilicon layer, the SOD barrier film, and the first polysilicon layer.
2. The method of claim 1, wherein forming the bulb type recess further comprises:
etching a portion of the semiconductor substrate corresponding to a portion of the active region overlapping the gate to form a first recess as a neck part of the bulb type recess;
forming an oxide spacer over a sidewall of the first recess;
performing an isotropic etching process on the semiconductor substrate at the bottom of the first recess to form a second recess as a lower part of the bulb type recess; and
removing the oxide spacer to form the bulb type recess defined by the first recess and the second recess.
3. The method of claim 1, wherein a depth of the bulb type recess is in a range of about 400 to 4,000 \u212b from a top surface of the semiconductor substrate.
4. The method of claim 1, wherein a thickness of the gate insulating film is in a range of about 30 to 100 \u212b.
5. The method of claim 1, wherein a thickness of the first polysilicon layer is in a range of about 100 to 300 \u212b.
6. The method of claim 1, wherein forming the SOD barrier film further comprises:
forming an SOD layer over the first polysilicon layer; and
performing a wet-etching process on the SOD layer to form the SOD barrier film over the first polysilicon layer at the lower part of the bulb type recess.
7. The method of claim 1, wherein a thickness of the SOD layer is in a range of about 1,000 to 3,000 \u212b.
8. The method of claim 6, wherein the wet-etching process for the SOD layer is performed by one cleaning process selected from the group consisting of BFN 390\u2033, BFN 70\u2033, and combination thereof.
9. The method of claim 1, wherein a thickness of the second polysilicon layer is in a range of about 500 to 1,000 \u212b.
10. The method of claim 1, wherein a P-type impurity ion is selected from the group consisting of B, Ga, In, and combinations thereof, and an N-type impurity ion is selected from the group consisting of As, Sb, P, and combinations thereof.
11. The method of claim 1, wherein performing the annealing process diffuses the impurity ions into the interface between the first polysilicon layer and the gate insulating film.
12. The method of claim 1, wherein a thickness of the metal layer is in a range of about 300 to 400 \u212b.
13. The method of claim 1, further comprising:
forming a thermal oxide film over the active region including a sidewall of the first polysilicon layer and the second polysilicon layer;
forming a stacked structure of a buffer oxide film and a nitride film over the semiconductor substrate and on the gate; and
performing a dry etching process on the nitride film, the buffer oxide film, and the thermal oxide film to form a gate spacer over a sidewall of the gate.
14. The method of claim 13, wherein a thickness of the thermal oxide film is in a range of about 20 to 150 \u212b.
15. The method of claim 13, wherein a thickness of the buffer oxide film is in a range of about 50 to 200 \u212b.
16. The method of claim 13, wherein a thickness of the nitride film is in a range of about 50 to 200 \u212b.
17. The method of claim 13, wherein a thickness of the gate spacer is in a range of about 50 to 600 \u212b.
18. A semiconductor device manufactured according to the method recited in claim 1.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An assembly comprising:
(a) a belt, which includes a plurality of wire cords extending lengthwise of the belt with spaces therebetween, and includes a coating of the cords extending into the spaces between the cords, said belt being configured for use in an elevator system as a suspension belt for a car and a counterweight, or being configured for use in an elevator system as a drive belt for a car or for a counterweight, or being configured for use in an elevator system as a combined suspension and drive belt for a car and a counterweight;
(b) a first connecting device including a first number of cord contacting elements providing electrical connections contacting element-to-cord; and
(c) a second connecting device, including a second number of cord contacting elements providing electrical connections contacting element-to-cord, and including at least two conductive elements, each being electrically connected to a respective one of the cord contacting elements, the conductive elements being provided for making electrical connections to a belt monitoring unit which monitors the proper condition of the cords on the basis of electrical signals passed through the cords;
(d) wherein at least one of the first and second connecting devices includes at least one bridge type cord contacting element, which extends into the gap between two cords and provides electrical connection to both cords, thereby electrically connecting the two cords.
2. The assembly of claim 1,
wherein said at least one cord contacting element is a screw having a shank portion engaging a wall of a bore in the connecting device, and having an end portion where the cross-sectional area of the screw is gradually reduced.
3. The assembly of claim 2,
wherein at least part of the end portion has a male screw thread.
4. The assembly of claim 2,
wherein said wall of said bore has a female screw thread, formed by the screw turned for mounting the same to the connecting device.
5. The assembly of claim 2,
wherein said bore has at least two sections with a gap therebetween, and wherein a section of said belt is located in said gap.
6. The assembly of claim 1,
wherein at least one of said conductive elements is penetrated by a screw pin, providing electrical connection with only one cord.
7. The assembly of claim 6,
wherein said screw pin has a shank portion engaging a wall of a bore in the connecting device, and has an end portion where the cross-sectional area of the screw pin is gradually reduced, wherein said screw pin is positioned in the connecting device such that it penetrates the respective cord substantially in a central portion of its width.
8. The assembly of claim 1,
wherein both the first and second connecting devices each include plural cord contacting elements, which each extend into a gap between two cords and provide electrical connections to these two cords.
9. The assembly of claim 8,
wherein the number of cords in the belt is 2n, the first number of bridge type cord contacting elements in the first connecting device is n, the second number of bridge type cord contacting elements in the second connecting device is n\u22121, and the number of conductive elements in the second connecting device is 2, wherein all cords in the belt are connected in an electrical series connection by means of said cord contacting elements and wherein said assembly is configured such that it is possible to make the electrical connections between the assembly and said belt monitoring unit via the second connecting device only.
10. The assembly of claim 1,
wherein said assembly is electrically connected to said belt monitoring unit, which comprises a housing, a printed circuit board, and a connector fixed to the housing andor the printed circuit board and electrically connected to the printed circuit board;
and wherein said second connecting device is electrically connected by plug in connection to said connector.
11. The assembly of claim 10,
wherein a belt section adjacent to the second connecting device is fixed to said housing by means of a fixation bracket.
12. A method of mounting a connecting device to a belt, which includes a plurality of wire cords extending lengthwise of the belt with spaces therebetween and includes a coating of the cords extending into the spaces between the cords, said belt being configured for use in an elevator system as a suspension belt for a car and a counterweight, or being configured for use in an elevator system as a drive belt for a car or for a counterweight, or being configured for use in an elevator system as a combined suspension and drive belt for a car and a counterweight; wherein said connecting device includes a slot that either extends as an open passage through the connecting device, or has, in one end portion thereof, a stop portion for the belt associated to the slot; and
wherein said connecting device includes at least one bore and one screw engaging a wall of the bore, the bore having an axis that traverses the slot;
said method comprising placing a section of said belt in said slot and turning said at least one screw, whereby a portion of the screw is urged into one of the spaces between two cords into contact with the two cords, thereby providing an electrical connection between the two cords.
13. The method of claim 12,
wherein a first connecting device having plural first screws is mounted, whereby portions of each of said first screws each time provide an electrical connection between a respective pair of cords;
and wherein a second connecting device having plural first screws and two second screws is mounted, whereby portions of each of said first screws each time provide an electrical connection between a respective pair of cords and portions of each of said second screws each time provide an electrical connection between only one cord and the second screw.
14. The method of claim 13,
wherein electrical connections are made between said second screws and a belt monitoring unit, thereby establishing a circuit which includes all cords in an electrical series connection and a component of the belt monitoring unit.