What is claimed is:
1. A composition comprising a material having the formula
RSiO1.5xHSiO1.5y,
wherein:
R is a C1 to C100 alkyl group;
xyn;
n is an integer between 2 and 30;
x is an integer between 1 and n; and
y is a number between 0 and n.
2. The composition according to claim 1, wherein said composition is in a vapor state.
3. The composition according to claim 1, wherein n is a member selected from the group consisting of the integers from 6 to 16, inclusive.
4. The composition according to claim 3, wherein n is a member selected from the group consisting of the integers from 8 to 12.
5. The composition according to claim 1, wherein R is a C1 to C20 straight-or branched-chain alkyl group.
6. The composition according to claim 5, wherein R is a C1 to C16 straight- or branched-chain alkyl group.
7. The composition according to claim 6, wherein R is a C1 to C6 straight- or branched-chain alkyl group.
8. The composition according to claim 1, wherein about 75% of said vaporized material has a molecular weight of less than about 3000 daltons.
9. The composition according to claim 8, wherein about 75% of said vaporized material has a molecular weight of less than about 1800 daltons.
10. The composition according to claim 9, wherein about 75% of said vaporized material has a molecular weight of less than about 1600 daltons.
11. A method of forming a low k dielectric film, said method comprising:
(a) depositing onto a substrate, a material comprising a film precursor having the formula:
RSiO1 5xHSiO1.5y,
wherein
xyn;
n is an integer between 2 and 30;
x is an integer between 1 and n;
y is a whole number between 0 and n;
R is a C1 to C100 alkyl group.
12. The method according to claim 11, wherein said depositing comprises a method selected from vapor deposition, spin-on, dip coating, spraying, sputtering and combinations thereof.
13. The method according to claim 16, wherein said vapor deposition comprises a member selected from chemical vapor deposition, physical vapor deposition and combinations thereof.
14. The method according to claim 12, wherein said chemical vapor deposition comprises a member selected from atmospheric chemical vapor deposition, low pressure chemical vapor deposition, plasma enhanced chemical vapor deposition and combinations thereof.
15. A method of forming a low k dielectric film, said method comprising:
(a) vaporizing a material to form a vaporized film precursor, said material comprising a film precursor having the formula
RSiO1.5xHSiO1.5y,
wherein
xyn;
n is an integer between 2 and 30;
x is an integer between 1 and n;
y is a whole number between 0 and n;
R is a C1 to C100 alkyl group; and
(b) depositing onto a substrate said vaporized film precursor to form a deposited film precursor.
16. The composition according to claim 15, wherein n is a member selected from the group consisting of the integers from 6 to 16, inclusive.
17. The method according to claim 16, wherein n is a member selected from the group consisting of the integers from 8 to 12.
18. The method according to claim 15, wherein R is C1 to C20 straight- or branched-chain alkyl group.
19. The method according to claim 18, wherein R is a C1 to C16 straight- or branched-chain alkyl group.
20. The method according to claim 19, wherein R is a C1 to C6 straight- or branched-chain alkyl group.
21. The method according to claim 15, wherein about 75% of said vaporized material has a molecular weight of less than about 3000 daltons.
22. The method according to claim 21, wherein about 75% of said vaporized material has a molecular weight of less than about 1800 daltons.
23. The method according to claim 22, wherein about 75% of said vaporized material has a molecular weight of less than about 1600 daltons.
24. The method according to claim 15, wherein said vaporizing is carried out at a temperature of from about 50 C. to about 300 C.
25. The method according to claim 15, wherein said vaporizing is performed under vacuum.
26. The method according to claim 15, further comprising;
(c) curing said deposited film precursor.
27. The method according to claim 26, wherein said curing is by a member selected from the group of heat, ultraviolet light, electron beam and combinations thereof.
28. The method according to claim 27, wherein said curing is accomplished by heating to a temperature of from about 150 C. to about 700 C.
29. The method according to claim 28, wherein said temperature is from about 200 C. to about 500 C.
30. A low k dielectric film comprising a material having the formula
HaSiObc(R1)aSiObd(R2)aSiObn,
wherein
R1 and R2 are members independently selected from C1 to C100 alkyl groups;
a is less than or equal to 1;
b is greater than or equal to 1.5; and
c, d and n are members independently selected from the group consisting of the integers greater than 10.
31. The method according to claim 30, wherein R1 and R2 are independently selected from C1 to C20 straight- or branched-chain alkyl group.
32. The method according to claim 35, wherein R1 and R2 are independently selected from C1 to C16 straight- or branched-chain alkyl groups.
33. The method according to claim 36, wherein R1 and R2 are independently selected from C1 to C6 straight- or branched-chain alkyl groups.
34. The method according to claim 37, wherein R1 and R2 are both methyl groups.
35. The film according to claim 30, wherein said film is a porous film.
36. The film according to claim 30, wherein said film has a dielectric constant of from about 0.1 to about 3.
37. The film according to claim 36, wherein said film has a dielectric constant of from about 0.5 to about 2.
38. A method for preparing a porous low k dielectric film having a preselected degree of porosity, said film comprising a material having the formula
HaSiObc(R1)aSiObd(R2)aSiObn,
wherein
R1 and R2 are members independently selected from C1 to C100 alkyl groups;
a is less than or equal to 1;
b is greater than or equal to 1.5; and
c, d and n are members independently selected from the group consisting of the integers greater than 10, said method comprising:
(a) depositing a film precursor to form a deposited film precursor, said film precursor comprising a material having the formula
RSiO1.5xHSiO1.5y,
wherein
xyn;
n is an integer between 2 and 30;
x is an integer between 1 and n;
y is a whole number between 0 and n;
R is a C1 to C100 alkyl group; and
(b) curing said deposited film precursor to form a low k dielectric film with a preselected degree of porosity.
39. The method according to claim 38, wherein said curing is carried out using a method selected from the group of heat, ultraviolet light and combinations thereof.
40. The method according to claim 39, wherein said curing is carried out by heating to a temperature of from about 150 C. to about 700 C.
41. The method according to claim 40, wherein said temperature is from about 200 C. to about 500 C.
42. The film according to claim 38, wherein said low k dielectric film has a dielectric constant of from about 0.1 to about 3.
43. The film according to claim 42, wherein said low k dielectric film has a dielectric constant of from about 0.5 to about 2.
44. An object comprising a low k dielectric film, said film comprising a material having the formula:
HaSiObc(R1)aSiObd(R2)aSiObn,
wherein
R1 and R2 are members independently selected from C1 to C100 alkyl groups;
a is less than or equal to 1;
b is greater than or equal to 1.5; and
c, d and n are members independently selected from the group consisting of the integers greater than 10.
45. The object according to claim 44, wherein said object comprises a wafer.
46. The wafer according to claim 45, wherein said wafer comprises a member selected from Si, SiON, SiN, SiO2, Cu, Ta, TaN and combinations thereof.
47. The wafer according to claim 45, wherein said wafer is a member selected from Si wafers, SiO2 wafers and combinations thereof.
48. The wafer according to claim 47, wherein said wafer is metallized.
49. The metallized wafer according to claim 48, metallized with a member selected from copper, titanium, titanium nitride and combinations thereof.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
What is claimed:
1. An apparatus, comprising:
a single-wafer cleaning device to provide a wet cleaning process to a wafer; and
a rate monitor connected to the single-wafer cleaning device to measure and control the wet cleaning process.
2. The apparatus of claim 1, wherein the rate monitor is to measure a rate at which a wet cleaning etch is progressing, predict an endpoint in time of the wet cleaning etch, and provide control signals that may be utilized to control the single-wafer cleaning device before the endpoint has been reached.
3. The apparatus of claim 1, wherein the rate monitor comprises:
an optical measuring device inside of the single-wafer cleaning device to make optical measurements that relate to a thickness of a thin film of a thin film layer overlying the wafer; and
a process controller connected to the optical measuring device, the process controller to determine an etch-rate of the thin film during a wet cleaning etch based on the optical measurement, to predict an endpoint to the wet cleaning etch based on the etch-rate, and to provide control signals to the single-wafer cleaning device based on the predicted endpoint.
4. The apparatus of claim 3, wherein the optical measuring device is an ellipsometer.
5. The apparatus of claim 3, wherein the optical measuring device comprises:
a transmitter to transmit a polarized light beam through the thin film layer and through a liquid layer overlying the thin film layer; and
a receiver to receive and analyze a reflection of the polarized light beam as the wafer is being cleansed to generate an optical measurement signal corresponding to the thickness of the thin film layer and the liquid layer.
6. The apparatus of claim 5, wherein the process controller is to receive the optical measurement signal and calculate the etch-rate based on the optical measurement signal.
7. The apparatus of claim 3, wherein the process controller is connected to the single-wafer cleaning device and is to provide control signals to the single-wafer cleaning device based on the predicted endpoint.
8. The apparatus of claim 1, wherein the single-wafer cleaning device comprises:
a fluid dispenser to dispense a liquid onto the wafer including a fluid flow controller to control the flow of the liquid;
a rotatable wafer holder to hold and rotate the wafer including a rotation controller to control rotation of the holder; and
a transducer assembly to provide acoustic energy to the liquid including a transducer controller to control power to the transducer assembly.
9. The apparatus of claim 8, wherein the rate monitor is connected to the fluid flow controller, the rotation controller, and the transducer controller, and said rate monitor is to provide control signals to the fluid flow controller, rotation controller, and transducer controller to control the wet cleaning process.
10. An apparatus, comprising:
a rotatable wafer holder to hold and rotate a wafer;
a fluid dispenser to dispense a liquid onto a thin film layer on the wafer;
a transducer assembly to provide acoustic energy to the liquid; and
a rate monitor to measure the thickness of the thin film layer during a wet cleaning etch, to predict an endpoint of the wet cleaning etch, and to control the rotatable wafer holder, fluid dispenser, and transducer assembly based on the predicted endpoint.
11. The apparatus of claim 10, wherein the rate monitor comprises an ellipsometer.
12. The apparatus of claim 10, wherein the rate monitor comprises:
a transmitter to transmit a polarized light beam onto the wafer; and
a receiver to receive and analyze a reflection of the polarized light beam.
13. The apparatus of claim 10, further comprising a cleaning chamber to contain at least a portion of the rotatable wafer holder, fluid dispenser, transducer assembly, and rate monitor.
14. The apparatus of claim 10, wherein the rotatable wafer holder has a variable rotation speed.
15. The apparatus of claim 10, wherein the fluid dispenser includes a plurality of cleaning fluid sources.
16. The apparatus of claim 10, wherein the transducer assembly is capable of producing acoustic energy at a plurality of megasonic frequencies.
17. An apparatus, comprising:
an ellipsometer coupled to a single-wafer cleaning device to make optical measurements relating to a thickness of a thin film layer overlying a wafer; and
a process controller connected to the ellipsometer, the process controller to control a wet cleaning process based on the optical measurements.
18. The apparatus of claim 17, wherein the ellipsometer is inside the single-wafer cleaning device.
19. The apparatus of claim 17, wherein the ellipsometer includes
a transmitter to transmit a polarized light beam onto a wafer; and
a receiver to receive and analyze a reflection of the polarized light beam, the transmitter and receiver inside a single-wafer cleaning device.
20. The apparatus of claim 17, wherein the process controller is to receive a measurement signal from the ellipsometer, to determine an etch rate for the wet cleaning etch based on the measurement signal, and to predict an endpoint to the etch based on the determined etch rate.
21. The apparatus of claim 20, wherein the process controller is to control the wet cleaning etch based on the predicted endpoint.
22. An apparatus, comprising:
a semiconductor substrate,
a thin film layer overlying the substrate,
a liquid layer overlying the thin film layer; and
an ellipsometer coupled to a single-wafer cleaning device, the ellipsometer to measure the thickness of the thin film layer and the liquid layer.
23. The apparatus of claim 22, wherein the thin film layer comprises a semi-transparent material.
24. The apparatus of claim 22, wherein the semiconductor substrate comprises a non-transparent material.
25. The apparatus of claim 22, wherein the liquid layer comprises a chemical capable of etching the thin film layer.
26. The apparatus of claim 22, wherein the semiconductor substrate, the thin film layer, the liquid layer, and the ellipsometer are inside a single-wafer cleaning device.
27. A method, comprising:
performing a wet cleaning process to a thin film layer on a wafer; and
monitoring changes to the thin film as the wet cleaning process is being performed to predict an endpoint for the wet cleaning process.
28. The method of claim 27 wherein monitoring the thin film comprises:
monitoring the rate at which changes are occurring to the thin film;
predicting an endpoint reference in time, based on the rate, of when the wet cleaning process will end; and
controlling the wet cleaning process after the endpoint has been predicted and before the endpoint has been reached, in preparation for additional processing that may occur after the endpoint has been reached.
29. The method of claim 27, wherein monitoring is performed in situ during the wet cleaning process with a liquid layer covering the thin film.
30. The method of claim 27, further comprising:
rotating the wafer; and
optically monitoring the changes to the thin film layer during the wet cleaning process as the wafer rotates.
31. The method of claim 27, further comprising:
cavitating a liquid layer overlying the thin film layer; and
optically monitoring the changes to the thin film layer during the wet cleaning process as the liquid layer cavitates.
32. The method of claim 27, further comprising controlling the wet cleaning process based on the predicted endpoint.
33. The method of claim 27, wherein performing a wet cleaning process includes:
dispensing a liquid onto the thin film layer to form a liquid layer over the thin film layer;
rotating the wafer; and
cavitating the liquid layer.
34. The method of claim 27, further comprising:
making optical measurements relating to a thickness of the thin film layer during the wet cleaning process;
determining an etch rate of the thin film layer;
determining an endpoint for the wet cleaning etch based on the etch rate; and
controlling the wet cleaning etch based on the predicted endpoint.
35. The method of claim 27, wherein the thin film is semi-transparent to a light beam and the wafer is non-transparent, and wherein monitoring changes to the thin film comprises:
passing a light beam through the thin film layer to produce a reflection of the light beam off of the wafer, the light beam and reflection having an optical path length;
making a first measurement of the optical path length;
dispensing a liquid layer over the thin film layer at a constant flow rate to maintain a uniform liquid layer thickness;
making a second measurement of the optical path length at a first moment before beginning a wet cleaning etch of the thin layer;
beginning a wet cleaning etch of the thin layer;
making a third optical measurement of the optical path length at a second moment after etching has begun;
determining an optical measurement difference between the first optical measurement and the second optical measurement;
determining an elapsed time difference between the beginning of the wet cleaning etch and the third optical measurement by determining the elapsed time between the first moment and the second moment;
determining an etch rate based on the optical measurement difference and the elapsed time difference; and
determining an endpoint to the wet etch based on the etch rate and the first optical measurement.
36. A method, comprising:
measuring a thickness of a thin film layer on a wafer during a wet cleaning etch;
determining an etch rate of the thin film layer; and
determining an endpoint for the wet cleaning etch based on the etch rate.
37. The method of claim 36, wherein measuring a thickness of a thin film layer comprises:
measuring a beginning thickness of the thin film layer;
dispensing a liquid layer over the thin film layer at a constant flow rate to maintain a uniform liquid layer thickness, the liquid layer and thin film layer having a composite thickness;
measuring a first composite thickness of the liquid layer and thin film layer at a first time during the wet cleaning etch; and
measuring a second composite thickness of the liquid layer and thin film layer at a second time during the wet cleaning etch.
38. The method of claim 37, wherein determining an etch rate of the thin film layer comprises:
determining a composite thickness difference between the first composite thickness and the second composite thickness;
determining an elapsed time difference between the first time and the second time; and
computing an etch rate by dividing the composite thickness difference by the elapsed time difference.
39. The method of claim 38, wherein determining an endpoint comprises dividing the beginning thickness by the etch rate.
40. The method of claim 36, further comprising:
controlling the wet cleaning etch based on the endpoint.
41. The method of claim 40, wherein controlling the wet cleaning etch comprises:
creating control signals based on the endpoints; and
transmitting the control signals to a single-wafer cleaning device.
42. The method of claim 40, wherein controlling the wet cleaning etch comprises:
creating a series of control values based on the endpoints;
organizing and storing the control values in memory according to a timing schedule; and
sequentially converting the control values to control signals according to the timing schedule and transmitting the control signals to a single-wafer cleaning device.
43. A computer readable storage medium containing executable computer program instructions which, when executed, cause a digital processing system to perform a method comprising:
determining an etch rate of the thin film layer on a wafer during a wet cleaning etch; and
determining an endpoint for the wet cleaning etch based on the etch rate.
44. The computer readable storage medium of claim 43, wherein the method comprises:
determining a composite thickness difference between a first composite thickness of a thin film and a liquid layer and a second composite thickness of the thin film and the liquid layer after the liquid layer has etched the thin film over an elapsed time; and
determining the etch rate of the thin film by dividing the composite thickness difference by the elapsed time.
45. The computer readable storage medium of claim 44, wherein the method comprises:
creating control signals based on the endpoints; and
transmitting the control signals to a single-wafer cleaning device.
46. The computer readable storage medium of claim 45, wherein the method comprises:
creating a series of control values based on the endpoints;
organizing and storing the control values in memory according to a timing schedule; and
sequentially converting the control values to control signals according to the timing schedule and transmitting the control signals to a single-wafer cleaning device.