1. An image reading apparatus, comprising:
an image reading section that reads an image of a document;
a scanning mechanism that causes the image reading section to move relative to the document when the document is at rest;
a document feeding mechanism that causes the document to move relative to the image reading section when the image reading section is at rest; and
a shutter movable between a first position where the shutter remains at rest and opens, allowing the image reading section to read the image of the document when the document moves relative to the image reading section at rest, and a second position where the shutter remains at rest and closes, allowing the image reading section to read the image of the document when the image reading section moves relative to the document at rest.
2. The image reading apparatus according to claim 1, wherein the document feeding mechanism includes a drive motor, and
wherein the shutter moves either to the first position or to the second position in an interlocked relation with the drive motor.
3. The image reading apparatus according to claim 2, wherein the shutter is formed of a plate-like material.
4. The image reading apparatus according to claim 2, wherein the shutter is formed of a flexible, sheet-like material.
5. The image reading apparatus according to claim 1, wherein the scanning mechanism that causes the image reading section to move within an image reading area relative to the document when the document is at rest within the image reading area; and
wherein the image reading section is positioned within the image reading area when the document moves relative to the image reading section at rest.
6. The image reading apparatus according to claim 5, further comprising a document supporting member on which the image reading area is defined; and
wherein the shutter extends to at least cover the image reading area and presses the document against the document supporting member;
wherein when the image reading apparatus operates in a mode in which the document is at rest and the image reading section moves relative to the document to read the image of the document, the document is placed within the image reading area.
7. The image reading apparatus according to claim 6, wherein the mode is a first mode, wherein the image reading apparatus further comprises a selector mechanism that selects whether the image reading apparatus should operate in the first mode or in a second mode in which the document moves relative to the image reading section at rest and the image reading section reads the image of the document through the opening.
8. The image reading apparatus according to claim 6, wherein the document pressing plate moves either to the first position or to the second position in an interlocked relation with the drive motor.
9. The image reading apparatus according to claim 1, wherein when the image reading apparatus operates in a first mode in which the document is at rest and the image reading section moves relative to the document to read the image of the document, the shutter is at the first position to close a window through which the image reading section reads the image of the document;
wherein when the image reading apparatus operates in a second mode in which the document moves relative to the image reading section at rest and the image reading section reads the image of the document through the opening, the shutter is at the second position to open the window through which the image reading section reads the image of the document.
10. An image forming system that incorporates the image reading apparatus according to claim 1 and an image forming apparatus.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A method of etching a feature in a substrate, comprising:
exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and
exposing the residual polymers to a second plasma through the patterned mask layer to etch the residual polymers proximate the bottom of the feature, wherein the second plasma is formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4).
2. The method of claim 1, wherein the first process gas comprises one of a fluorine-containing gas or a chlorine-containing gas.
3. The method of claim 1, wherein the second plasma forms hydroxylamine (NH2OH) to react with the residual polymers proximate the bottom of the feature.
4. The method of claim 1, further comprising forming the first plasma by igniting the first process gas using an RF power source.
5. The method of claim 4, wherein the RF power source provides power at about 100 to about 5,000 watts.
6. The method of claim 1, wherein the residual polymers comprise a fluorocarbon compound having a formula CFx.
7. The method of claim 1, further comprising forming the second plasma by igniting the second process gas using an RF power source.
8. The method of claim 7, wherein the RF power source provides power at about 100 to about 5,000 watts.
9. The method of claim 1, further comprising applying a first bias power to the substrate while exposing the substrate to the first plasma.
10. The method of claim 9, wherein the first bias power is about 15 to about 3,000 watts.
11. The method of claim 1, further comprising applying a second bias power to substrate while exposing the substrate to the second plasma.
12. The method of claim 11, wherein the second bias power is about 15 to about 3,000 watts.
13. The method of claim 1, wherein the feature has an aspect ratio of depth to width of greater than about 10:1.
14. A method of processing a substrate, comprising:
depositing a boron doped amorphous carbon layer disposed atop a substrate;
depositing a patterned photoresist layer atop the boron doped amorphous carbon layer;
exposing the boron doped amorphous carbon layer to a first plasma formed from a first process gas comprising one of a fluorine containing gas or a chlorine containing gas to etch a feature into the boron doped amorphous carbon layer, wherein the first process gas reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and
exposing the substrate to a second plasma formed from a second process gas comprising nitrogen (N2), oxygen (O2), hydrogen (H2), and methane (CH4)_to etch the residual polymers proximate the bottom of the feature without etching the boron doped amorphous carbon layer.
15. The method of claim 14, further comprising applying a first bias power to the substrate while exposing the substrate to the first plasma; and applying a second bias power to the substrate while exposing the substrate to the second plasma.
16. The method of claim 14, further comprising forming the first plasma by igniting the first process gas using an RF power source at about 100 to about 5,000 watts.
17. The method of claim 14, further comprising forming the second plasma by igniting the second process gas using an RF power source at about 100 to about 5,000 watts.
18. A method of etching a feature in a substrate, comprising:
exposing a boron doped amorphous carbon layer disposed on the substrate to a first plasma through a patterned mask layer to etch a feature into the boron doped amorphous carbon layer, wherein the first plasma is formed from a first process gas that reacts with the boron doped amorphous carbon layer to form residual polymers proximate a bottom of the feature; and
exposing the residual polymers through the patterned mask layer to hydroxylamine (NH2OH) formed by a second plasma to etch the residual polymers proximate the bottom of the feature.
19. The method of claim 18, wherein the second plasma is formed from a second process gas consisting of nitrogen, oxygen, hydrogen, and carbon and, optionally, an inert gas.
20. The method of claim 19, wherein the second process gas includes the inert gas.