1. A tire comprised of an outer circumferential rubber tread with a supporting underlying carcass, wherein said carcass contains at least one circumferential continuous cord reinforced belt ply underlying said rubber tread and at least one split carcass ply underlying said belt ply composed of a pair of cord reinforced rubber carcass ply elements, wherein the split ply ends of said split carcass ply elements are spaced apart from each other in the central, crown portion of the tire, wherein at least one central rubber layer spans the gap between said split carcass ply elements and overlays the radially outer surface of the split carcass ply ends of said split carcass ply elements;
wherein the rubber composition of said central rubber layer contains a dispersion of:
A reinforcing fillers comprised of 30 to 100 phr of rubber reinforcing carbon black and synthetic amorphous precipitated silica, and
B from about 2 to about 30 phr of a combination of macro and micro reinforcing fillers comprised of:
(1) from about 1 to about 25 phr of macro reinforcing filler, and
(2) from about 1 to about 25 phr of micro reinforcing filler;
wherein said central rubber layer excludes continuous cord reinforcement
wherein said macro reinforcing fillers consist of short fibers comprised of at least one of synthetic and natural fibers;
wherein said micro reinforcing filler is comprised of particulate syndiotactic polybutadiene having a melting point (MP) in a range of from 170\xb0 C. to 225\xb0 C.
2. The tire of claim 1 wherein the average length of said macro reinforcing fibers is in a range of from about 1.3 to about 25 mm.
3. The tire of claim 1 wherein the fibers for said macro reinforcing filler are selected from at least one of nylon, polyester, rayon, fiberglass, aramid, cellulose and cotton fibers.
4. The tire of claim 1 wherein the fibers for said macro reinforcing filler are selected from nylon, cellulose, polyester and aramid fibers.
5. The tire of claim 1 wherein elastomers for the rubber composition of said central rubber layer are comprised of at least one of natural cis 1,4-polyisoprene rubber, styrenebutadiene rubber and cis 1,4-polybutadiene rubber.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An integrated MIM capacitor structure suitable for inclusion in a semiconductor device, the capacitor structure comprising:
a first metallization level overlying a substrate, the first metallization level including a first metallization plate overlying a capacitor region of the substrate;
a MIM capacitor, comprising:
the first metallization plate;
a MIM capacitor dielectric overlying the first metallization plate; and
an electrically conductive MIM capacitor plate overlying the MIM capacitor dielectric; and
a parasitic capacitor, comprising:
a second metallization plate comprising a portion of a second metallization level overlying the capacitor region;
a parasitic capacitor dielectric including an interlevel dielectric underlying the second metallization plate; and
a parasitic capacitor plate underlying the interlevel dielectric;
wherein a structure of the first metallization plate is selected from a fingered structure and a convex plate structure, a structure of the second metallization plate is selected from a fingered structure and a convex plate structure, and wherein the fingered structured includes a plurality of conductive fingers extending from a common connector;
wherein the fingered structure includes a plurality of rectangular fingers, each having a finger depth and a finger length, each adjacent pair of fingers separated by a finger spacing; and
wherein a ratio of a finger width to the finger spacing is approximately equal to 4.
2. The capacitor structure of claim 1, wherein the parasitic capacitor plate comprises the MIM capacitor plate.
3. The capacitor structure of claim 2, further comprising:
an electrically conductive via connecting the second metallization plate to the first metallization plate; and
a routing element comprising a portion of the second metallization level, wherein the routing element is connected to the MIM capacitor plate.
4. The capacitive structure of claim 1, wherein a metallization density of the fingered structure is approximately equal to 80%.
5. A semiconductor fabrication process, comprising:
forming a first metallization level overlying a substrate including a capacitor region and a field region, the first metallization level including a first metallization plate overlying the capacitor region;
forming a capacitor dielectric overlying the first metallization plate;
forming a capacitor plate overlying the capacitor dielectric;
forming an interlevel dielectric layer overlying the capacitor plate; and
forming a second metallization level overlying the interlevel dielectric layer, the second metallization level including a second metallization plate overlying the capacitor region;
wherein forming at least one of the first metallization level and the second metallization level includes a patterning of a metallization level to define a fingered structure, the fingered structure including a plurality of electrically coupled finger elements, wherein adjacent finger elements are separated by a minimum spacing;
wherein the finger elements have a finger width; and
wherein a spacing-to-period ratio of the fingered structure is approximately equal to 20%.
6. The semiconductor fabrication process of claim 5, further comprising:
prior to forming the interlevel dielectric layer, forming a second capacitor dielectric overlying the first capacitor plate;
forming a second capacitor plate overlying the second capacitor dielectric.