1. A method for producing a semiconductor layer, the method comprising:
forming a film containing a metal element and a substance that contains an oxygen element;
generating oxygen gas by heating the film; and
forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element.
2. The method for producing a semiconductor layer according to claim 1, wherein the substance further contains an alkali metal element.
3. The method for producing a semiconductor layer according to claim 1, wherein the chalcogen element is contained in the film.
4. The method for producing a semiconductor layer according to claim 1, wherein the chalcogen element is contained in an atmosphere used when forming the semiconductor layer.
5. A method for producing a semiconductor layer, the method comprising:
forming a lower film containing a metal element;
forming an upper film on the lower film, the upper film containing the metal element and a substance that contains oxygen element;
generating oxygen gas by heating the upper film; and
forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.
6. The method for producing a semiconductor layer according to claim 5, wherein the substance contains an alkali metal element.
7. The method for producing a semiconductor layer according to claim 5, wherein at least one of the lower film and the upper film contains the chalcogen element.
8. The method for producing a semiconductor layer according to claim 5, wherein an atmosphere contains the chalcogen element when forming the semiconductor layer.
9. A method for producing a photoelectric conversion device, the method comprising:
forming a first semiconductor layer by the method for producing the semiconductor layer according to claim 1; and
forming a second semiconductor layer having a conductivity type different from the first semiconductor layer, and electrically connected to the first semiconductor layer.
10. A semiconductor raw material comprising a metal element and a substance that generates oxygen when heated.
11. The semiconductor raw material according to claim 10, further comprising a chalcogen element.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A print head used for a printing apparatus for printing by ejecting ink drops to form dots, comprising:
a black ink nozzle array ejecting a black ink; and
a supplementary nozzle array receiving a supplementary solution independently from the black ink nozzle array, thereby ejecting the supplementary solution;
wherein the supplementary nozzle array is offset from the black ink nozzle array in a sub-scan direction, the offset amount being half of a nozzle pitch in the sub-scan direction.
2. The print head in accordance with claim 1, wherein
the supplementary nozzle array is disposed at an end portion of the print head.
3. The print head in accordance with claim 1, further comprising:
a cyan ink nozzle array for ejecting a cyan ink;
a magenta ink nozzle array for ejecting a magenta ink; and
a yellow ink nozzle array for ejecting a yellow ink;
wherein the supplementary nozzle array receives the supplementary solution independently further from the cyan ink nozzle array, the magenta ink nozzle array, and the yellow ink nozzle array.
4. The print head in accordance with claim 3, further comprising:
a light-cyan ink nozzle array for ejecting a light-cyan ink having less density than the cyan ink; and
a light-magenta ink nozzle array for ejecting a light-magenta ink having less density than the magenta ink;
wherein the supplementary nozzle array receives the supplementary solution independently further from the light-cyan ink nozzle array and the light-magenta ink nozzle array.