1. A robot joint driving device assembly, comprising:
a frame;
a first joint driving device provided at one outer side of the frame to drive a robot joint unit in a first direction; and
a second joint driving device provided at another outer side of the frame to drive the robot joint unit in a second direction perpendicular to the first direction,
wherein the first joint driving device includes: a first driving motor movable in regular and reverse directions; a movable member moving rectilinearly according to rotation of the first driving motor by a belt, the movable member including at least one wire connection part, to which a wire unit is connected; the wire unit connected to both sides of the movable member; an idle pulley rotatably provided at one side of the wire unit; and a joint part provided at another side of the wire unit, and
wherein the at least one wire connection part includes at least one wire passage hole, into which the wire unit is inserted, and at least one wire coupling hole to fix the wire unit to the movable member by at least one coupling pin.
2. The robot joint driving device assembly according to claim 1, wherein the first joint driving device further includes:
an adjustment unit to adjust tension of the wire unit.
3. The robot joint driving device assembly according to claim 1, wherein the first joint driving device further includes a ball screw part, to which the movable member is screw-connected, the ball screw part receiving rotary force from the belt connected to the first driving motor.
4. The robot joint driving device assembly according to claim 3, wherein the ball screw part is connected with the first driving motor and is rotated according to driving of the first driving motor.
5. The robot joint driving device assembly according to claim 1, wherein the second joint driving device includes:
a second driving motor;
an input shaft connected to the second driving motor;
an oval wave generator connected to the input shaft;
a flex spline connected with an output part, having teeth formed on some portions thereof, and installed at an outside of the wave generator; and
a circular spline having teeth formed therein to receive the flex spline while engaging with the flex spline.
6. The robot joint driving device assembly according to claim 5, wherein the second joint driving device further includes a rotational angle sensor to measure an angle of rotation of a robot joint.
7. The robot joint driving device assembly according to claim 1, wherein each of the first joint driving device and the second joint driving device includes a torque sensor to measure torque applied to each robot joint.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. An in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, the dielectric layer deposition process comprising repeating the steps of:
supplying a first source gas for dielectric layer deposition into a chamber of the atomic layer deposition apparatus, the chamber for depositing dielectric layers of semiconductor devices;
purging the first source gas from the chamber;
supplying a second source gas into the chamber of the atomic layer deposition apparatus; and
purging the second source gas from the chamber,
wherein a process of cleaning an inside of the vaporizer of the atomic layer deposition apparatus is performed at the same time as purging the first source gas, and at the same time as supplying the second source gas into the chamber of the atomic layer deposition apparatus, and before supplying the first source gas again.
2. The in-situ cleaning method of claim 1, wherein the second source gas is O3.
3. The in-situ cleaning method of claim 1, wherein the first source gas exists in a liquid or solid state at room temperature and is dissolved in an organic solvent before being supplied into the chamber of the atomic layer deposition apparatus.
4. The in-situ cleaning method of claim 1, wherein, the process of cleaning the inside of the vaporizer is performed using an organic solvent having a temperature the same as or higher than a vaporization temperature of the first source gas.
5. The in-situ cleaning method of claim 1, wherein the process of cleaning the inside of the vaporizer is performed using one selected from a group of pressurized gases consisting of nitrogen, argon and helium.
6. The in-situ cleaning method of claim 1, wherein the process of cleaning the inside of the vaporizer is performed by flowing an organic solvent into the vaporizer and applying a pressurized gas.
7. The in-situ cleaning method of claim 1, wherein the atomic layer deposition apparatus comprises:
a sealed chamber in which dielectric layer of semiconductor devices is deposited;
a vaporizer which is connected to the chamber;
a first source gas supply unit supplying the first source gas to the vaporizer;
a vaporizer cleaning unit supplying the vaporizer with the organic solvent and pressurized gas for vaporizer cleaning;
a second source gas supply unit supplying the second source gas to the chamber;
a vacuum pump which is connected to the chamber; and
a bypass line which is diverged from a connecting line between the chamber and vaporizer and connected to the vacuum pump.
8. The in-situ cleaning method of claim 7, wherein the vaporizer cleaning unit comprises a liquid delivery system (LDS).
9. An in-situ method of cleaning a vaporizer of an atomic layer deposition apparatus during a dielectric layer deposition process, the dielectric layer deposition process, comprising:
a) supplying a first source gas for dielectric layer deposition into a chamber of the atomic layer deposition apparatus;
b) purging the first source gas;
c) supplying a second source gas into the chamber;
d) purging the second source gas; and
e) cleaning an inside of the vaporizer of the atomic layer deposition apparatus after supplying the first source gas;
wherein steps b) and e) are performed at the same time and wherein steps c) and e) are performed at the same time.
10. The in-situ cleaning method of claim 9, comprising repeating steps a) through e).
11. The in-situ cleaning method of claim 9, wherein the second source gas is O3.
12. The in-situ cleaning method of claim 9, wherein the first source gas exists in a liquid or solid state at room temperature and is dissolved in an organic solvent before being supplied into the chamber.
13. The in-situ cleaning method of claim 9, wherein step e) is performed using an organic solvent having a temperature the same as or higher than a vaporization temperature of the first source gas.
14. The in-situ cleaning method of claim 9, wherein step e) is performed using a pressurized gas selected from the group consisting of nitrogen, argon and helium.
15. The in-situ cleaning method of claim 9, wherein step e) is performed by flowing an organic solvent into the vaporizer and applying a pressurized gas.