1. An organic semiconductive material comprising at least one matrix material and at least one doping material, wherein the matrix material is selected from compounds having formula (1):
wherein n is 1 or 2.
2. The organic semiconductive material as recited in claim 1, wherein the doping material has a LUMO equal to or more positive than 0.0 V.
3. The organic semiconductive material as recited in claim 1, wherein the doping material is selected from compounds having formula (2):
wherein X is
wherein each R1 is selected independently from the group consisting of aryl and heteroaryl, wherein the aryl and heteroaryl are at least partially substituted with electron-poor groups (acceptor groups),
wherein the acceptor groups are electron-attracting groups.
4. The organic semiconductive material as recited in claim 1, wherein the doping material is embedded in the matrix material.
5. The organic semiconductive material as recited in claim 1, wherein the doping material and the matrix material comprise two layers that are in physical contact with one another.
6. The organic semiconductive material as recited in claim 1, wherein the matrix material is present in a first and a second layer, wherein either the first or the second layer is doped with the doping material.
7. The organic semiconductive material as recited in claim 1, wherein the doping material is selected from:
2,2\u2032,2\u2033-(Cyclopropane-1,2,3-triylidene)tris(2-(perfluorophenyl)-acetonitrile);
2,2\u2032,2\u2033-(Cyclopropane-1,2,3-triylidene)tris(2-(perfluoropyridin-4-yl)-acetonitrile);
2,2\u2032,2\u2033-(Cyclopropane-1,2,3-triylidene)tris(2-(4-cyanoperfluorophenyl)-acetonitrile);
2,2\u2032,2\u2033-(Cyclopropane-1,2,3-triylidene)tris(2-(2,3,5,6-tetrafluoro-4-(trifluoromethyl)phenyl)-acetonitrile); or
(Cyclopropane-1,2,3-triylidene)tris(2-(2,6-dichloro-3,5-difluoro-4-(trifluoromethyl)phenyl)-acetonitrile).
8. An organic component comprising an organic semiconductive material, wherein the organic semiconductive material comprises at least one matrix material and at least one doping material, wherein the matrix material is selected from compounds having formula (1):
wherein n is 1 or 2.
9. The organic component as recited in claim 8, wherein the organic component is a light emitting component.
10. The organic component as recited in claim 8, wherein the organic component is an organic solar cell.
11. The organic semiconductive material as recited in claim 2, wherein the doping material has a LUMO equal to or more positive than 0.24 V in MeCN vs FcFc+.
12. The organic semiconductive material as recited in claim 3, wherein the aryl and heteroaryl are completely substituted with electron-poor groups (acceptor groups).
13. The organic semiconductive material as recited in claim 3, wherein the aryl is independently selected from phenyl, biphenyl, \u03b1-naphthyl, \u03b2-naphthyl, phenantryl, or anthracyl.
14. The organic semiconductive material as recited in claim 3, wherein the heteroaryl is independently selected from pyridyl, pyrimidyl, triazyl, or quinoxalinyl.
15. The organic semiconductive material as recited in claim 3, wherein the acceptor groups are independently selected from fluorine, chlorine, bromine, CN, trifluoromethyl, or nitro.
16. The organic semiconductive material as recited in claim 1, wherein the first and second layers are arranged adjacent to one another.
The claims below are in addition to those above.
All refrences to claim(s) which appear below refer to the numbering after this setence.
1. A fuse, comprising:
a tungsten-containing structure;
an electrically conductive structure directly contacting the tungsten-containing structure; an interface between the tungsten-containing structure and the electrically conductive structure being configured to rupture when current through said interface exceeds a predetermined level; the electrically conductive structure being a titanium-containing structure; and
wherein the tungsten-containing structure is a substantially cylindrical structure, and wherein the titanium-containing structure comprises a plate oriented to have an edge directly against a substantially circular end of the cylindrical structure.
2. The fuse of claim 1 wherein the titanium-containing structure further comprises a ledge along the edge, with the ledge also being directly against the substantially circular end of the cylindrical structure.
3. A fuse, comprising:
a tungsten-containing structure having a first end with a first total area;
an electrically conductive structure having a second end with a second total area, the second total area being less than the first total area; an entirety of the second end directly contacting the first end; an interface between the first and second ends being configured to rupture when current through said interface exceeds a predetermined level;
the interface comprising an area of less than or equal to about 1500 nm2;
wherein the electrically conductive structure is a titanium-containing structure comprising a mixture containing titanium and nitrogen;
wherein the tungsten-containing structure is a substantially cylindrical structure; and
wherein the first end is a substantially circular end of the substantially cylindrical structure.